Lattice vibrations in silicon - Microscopic dielectric model.
Si lattice vibrations, calculating phonon dispersion curves from microscopic model by dielectric screening theory
Martin, R. M.↗
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Dielectric screening model for lattice vibrations of diamond-structure crystals
Two parameter model for lattice vibrations applicable to diamond structured crystals, calculating phonon dispersion curves from dielectric screening theory
Martin, R. M.↗
Inverse isotope effect and the x dependence of the superconducting transition temperature in PdHx and PdDx
First-principles electron-band-structure calculations and measured phonon properties are employed in a calculation of the concentration dependence of the superconducting transition temperatures for PdHx and PdDx, including the inverse isotope effect. Excellent agreement with the experimental results is obtained. Our model also gives a qualitative understanding of the enhanced transition temperatures in the palladium-noble-metal hydrides.
Klein, B. M.↗
Superconductivity in the palladium-hydrogen system
Band theory and phonon measurements are used to calculate the electron-phonon coupling constant wavelength for Pd and PdD. The results indicate that superconductivity is absent in Pd metal because of the large value of the Coulomb pseudopotential, and that superconductivity occurs in PdD primarily because of coupling with the optic phonons. These results are consistent with superconducting transition-temperature measurements for these systems.
Papaconstantopoulos, D. A.↗
Towards Accurate Predictions of Martensitic Transition Temperatures for Shape Memory Alloys from Ab Initio Simulations
Experimentally, NiTi undergoes a single martensitic phase transition around 341 K from the lowtemperature (T) monoclinic B19’ phase (P21/m) to the high-temperature cubic B2 phase (Pm3m). Theoretically, an orthorhombic B33 (Cmcm) has also been proposed as the T=0 ground state structure, although this phase has never been observed. Accurate predictions of martensitic transition temperatures (MTT) have remained elusive in part due to several well-known theoretical complexities of these systems including low temperature instabilities of the B2 phase. Recently, we proposed a rigorous thermodynamic integration approach based on ab initio simulations to resolve many of these difficulties [1,2]. However, an unsatisfying overprediction of the MTT relative to experiment (by ~100 K) means a fully quantitative theory is still lacking. In this work, we report several new developments to our method that bring first principles theory and experiment much closer into agreement. Our calculations indicate that phonon free energies at low temperature stabilizes B19’ over B33, rationalizing B19’ as the ground state down to T=0. We also find that accurate computations of the electronic free energy, i.e. the change in energy and the appearance of electronic configurational entropy due to finite temperature, is crucial to obtain accurate MTT. Incorporating these corrections results in an MTT prediction of 365 K for binary NiTi, which is in very close agreement with experiment. Our theoretical approach is expected to be a broadly applicable and predictive theory for MTT of SMAs.
Zhigang Wu↗
Thermal conductivity of thermoelectric Si(0.8)-Ge(0.2) alloys
The thermal conductivity of heavily doped, n-type Si-Ge alloys has been studied from 300 to 1200 K. The scattering rate of several phonon scattering mechanisms has been calculated, including intrinsic scattering, mass defect and distortion scattering, phonon-electron scattering, and scattering by inclusions. These rates were then used to calculate the lattice thermal conductivity. The electronic component of the thermal conductivity was calculated from the calculated Lorenz ratio and measured values of the electrical conductivity. The total thermal conductivity was then compared to measured values for a specimen studied by Vining et al. (1991).
White, D. P.↗
Prediction of structures and magnetic orientations in solid alpha and beta-O2
A quasi-harmonic-lattice-dynamics method coupled with a pattern-recognition optimization scheme is used to determine the minimum energy structures and magnetic orientations of solid oxygen. It is shown that the magnetic interaction is responsible for the stability of alpha-O2 with respect to beta-O2 at zero temperature and pressure. The calculated alpha-O2 lattice parameters, magnetic orientations, and sublimation energy are in good agreement with experiment. Phonon dispersion curves are calculated at vector k not equal to zero and the acoustic sound velocities are determined. The rms translational and orientational fluctuations from equilibrium are also calculated. The beta-O2 phase is described by constraining the magnetic moments so that the magnetic Hamiltonian preserves the hexagonal symmetry of the crystal. The calculated lattice parameters are in good agreement with the experiments, and a three-sublattice, quasi-helical magnetic orientation is predicted from structural and energetic considerations.
Etters, R. D.↗
A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys
A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.
Vining, Cronin B.↗
On the lattice dynamics of metallic hydrogen and other Coulomb systems
Numerical results for the phonon spectra of metallic hydrogen and other Coulomb systems in cubic lattices are presented. In second order in the electron-ion interaction, the behavior of the dielectric function of the interacting electron gas for arguments around the seond Fermi harmonic leads to drastic Kohn anomalies and even to imaginary phonon frequencies. Third-order band-structure corrections are also calculated. Properties of self-consistent phonons and the validity of the adiabatic approximation are discussed.
Beck, H.↗
Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy
Uniform radial flow epitaxy, a novel growth technique, has been used to grown InGaAs films on InP. Epitaxial layers above and below the critical thickness for the onset of slip were grown. Raman spectroscopy was used to characterize the quality of epitaxial layers, determine alloy composition, and measure the strain. Raman spectra from both pseudomorphic (strained) and relaxed (unstrained) InGaAs films were obtained at 300 and 80 K. The difference in the frequencies of their GaAs-like longitudinal optical phonons was used to calculate stress for the strained InGaAs/InP, leading to a direct formula for the evaluation of the layer stress.
Feng, Z. C.↗
Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation
We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.
Hall, C.↗
Conducting a thermal conductivity survey
A physically transparent approximate theory of phonon decay rates is presented starting from a pair potential model of the interatomic forces in an insulator or semiconductor. The theory applies in the classical regime and relates the 3-phonon decay rate to the third derivative of the pair potential. Phonon dispersion relations do not need to be calculated, as sum rules relate all the needed quantities directly to the pair potential. The Brillouin zone averaged phonon lifetime turns out to involve a dimensionless measure of the anharmonicity multiplied by an effective density of states for 3-phonon decay. Results are given for rare gas and alkali halide crystals. For rare gases, the results are in good agreement with more elaborate perturbation calculations. Comparison to experimental data on phonon linewidths and thermal conductivity are made.
Allen, P. B.↗
Machine Learning Approaches for Rare-Earth Silicate Environmental Barrier Coating Thermochemical and Thermomechanical Property Predictions
Environmental barrier coatings (EBCs) are a necessary enabling technology for the transition from superalloys to silicon carbide (SiC) ceramic matrix composites (CMCs) in gas turbine engines for increased efficiency and decreased fuel costs. SiC-based CMCs are prone to oxidation-based degradation in the engine hot section, and rare-earth (RE) silicates are promising candidates for EBCs due to their close thermal expansion match to the composite substrate and oxidation resistance. However, the design of EBCs is hindered by the large chemical space of candidate materials and the difficulty in obtaining material properties for engineering optimization. This is especially difficult as research continues into mixed-cation or “high-entropy” RE silicates. First-principles computational methods such as density functional theory (DFT) are highly effective at calculating material properties to guide coating design but are limited by their computational cost. Atomistic simulations have the potential to both accelerate property calculations and expand the properties able to be calculated due to their lower computational compared to DFT. However, they require interatomic potentials (IAPs) specific to the material system of interest, and, to our knowledge, there are no suitable IAPs for RE silicates. Machine learning (ML) is a promising technique to accelerate material property predictions indirectly by generating IAPs for atomistic simulations or via direct prediction. In this work, we present two ML approaches to accelerate the calculation of RE silicate properties relevant to EBC design: 1) a ML-derived interatomic potential (IAP) for atomistic simulations of yttrium disilicate (Y2Si2O7) from DFT training data, and 2) a neural network (NN) model to directly predict thermochemical properties of RE silicates and oxides directly from easily obtainable unit cell parameters. Classical MD simulations using the IAP yield lattice properties and bond lengths in good agreement with both DFT and experimental results from x-ray diffraction. Thermodynamic properties calculated using the finite-displacement phonon method and quasi-harmonic approximation were orders of magnitude faster than DFT with good agreement to the DFT results. The IAP was also used to calculate properties such as coefficient of thermal expansion (CTE) that require large simulation supercells and are therefore difficult with DFT. The IAP correctly predicted the anisotropic nature of the CTE in three different phases of Y2Si2O7. The NN model predicts constant pressure heat capacity, Cp, orders of magnitude faster than DFT calculations, which can enable its use as a surrogate model for multiscale simulations. The two methods presented in this work demonstrate the utility of ML for accelerating the prediction of RE silicate properties, which can in turn accelerate EBC design and optimization.
machine learning↗
Double simple-harmonic-oscillator formulation of the thermal equilibrium of a fluid interacting with a coherent source of phonons
A formulation is given for a collection of phonons (sound) in a fluid at a non-zero temperature which uses the simple harmonic oscillator twice; one to give a stochastic thermal 'noise' process and the other which generates a coherent Glauber state of phonons. Simple thermodynamic observables are calculated and the acoustic two point function, 'contrast' is presented. The role of 'coherence' in an equilibrium system is clarified by these results and the simple harmonic oscillator is a key structure in both the formulation and the calculations.
Defacio, B.↗
HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies
The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.
Berding, M. A.↗
Structural, dynamical and electronic properties of CaCuO2
The scalar relativistic version of an accurate first principles full potential self-consistent linearized muffin tin orbital (LMTO) method has been employed for describing the physical properties of the parent system of the high-T(sub c) oxide superconductors, i.e., CaCuO2. The presently employed modified version of the LMTO method is quite fast and goes beyond the usual LMTO ASA method in the sense that it permits a completely general shape of the potential and the charge density. Also, in contrast to LMTO ASA, the present method is also capable of treating distorted lattice structures accurately. The calculated values of the lattice parameters of pure CaCuO2 lie within 3% of the experimentally measured values for the Sr-doped system Ca(0.86)Sr(0.14)CuO(2). The computed electronic structures and the density of states is quite similar to those of the other oxide superconductors, except of their three- dimensional character because of the presence of strong coupling between the closely spaced CuO2 layers. The van Hove singularity peak appears slightly below the Fermi level and a small concentration of oxygenation /or/ substitutional doping may pin it at the Fermi level. The calculated frequencies for some symmetric frozen phonons for undoped CaCuO2 are quite near to the measured data for the Sr-doped CaCuO2.
Agrawal, Bal K.↗
Theory of positronium formation and positron emission at metal surfaces
The range of metallic surface processes available to the implanted positron is examined with a view to bare positron escape, positron surface state trapping, surface state detrapping, and positronium atom conversion. The stopping distance and its rms deviation are calculated. The effect of the elastic positron-ion core scattering, and the finite temperature corrections in the positron-phonon scattering are included. Overall conversion and emission efficiencies are calculated by solving an appropriate diffusion equation with boundary conditions set by the branching ratios for the surface processes. The temperature and incident energy dependence of the results for positronium atom conversion and positron emission efficiency are compared to experimental data.
Nieminen, R. M.↗
Theory of high-field electronic transport in bulk ZnS and ZnSe
This paper theoretically investigates the nature of electronic transport and the high-energy tails of the electron distribution functions in bulk ZnSe and ZnS as a function of the applied electric field were investigated using calculations based on an ensemble Monte Carlo model. The calculations include the full details of the first two conduction bands as well as the full-order treatment of the electron-phonon scattering mechanisms. Results of high-field electronic transport calculations show that the electron energy distribution function is significanty cooler in ZnS than in ZnSe at comparable electric field strengths. The cooler distribution in ZnS is due to the much greater electron scattering rate. Consequently, it is more difficult to achieve carrier heating to comparable energies in ZnS than in ZnSe.
Brennan, Kevin↗