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Optical and Atomic Force Microscopy Characterization of PbI2 Quantum Dots

Lead iodide (PbI2) clusters were synthesized from the chemical reaction of NaI (or KI) with Pb(NO3)2 in H2O, D2O, CH3OH, and C3H7OH media. The observation of the absorption features above 350 nm with the help of integrating sphere accessory strongly suggests the quantum dot formation of PbI2 in solution. Spectral comparison between the synthesized PbI2 clusters in solution and PbI2 nanophase by impregnation of PbI2 in four different pore-sized porous silica indicates that the PbI2 cluster size in solution is less than 2.5 nm in lateral dimension. Atomic force microscopy (AFM) measurements show that the PbL clusters deposited onto three different molecularly flat surfaces are single-layered. The measured height is 1.0 - 0.1 nm. The swollen layer thickness can be attributed to the intralayer contraction from the strong lateral interaction among PbI2 molecules, which is supported by ab initio calculation. Raman scattering measurement of LO and TO modes of PbI2 in bulk and in the confined state were also conducted in 50-150 cu cm region. The observed three bands at 74, %, 106 1/cm are assigned to TO2, LO2, and LO, mode, respectively. The relatively small red-shift in LO modes may be caused by the surface phonon polaritons of PbI2 nanophase in the porous silica.

Mu, R.↗

Vapor Growth of Indium Monoiodide

Indium (I) iodide, InI, is part of a group of heavy metal iodides that can be used as room temperature radiation detectors. Other examples are HgI2, PbI2, BiI3, or TlPbI3. InI has several advantages, such as low toxicity, no solid phase transition (such as in HgI2), and no tendency to form polytypes (PbI2, BiI3 ). All binary iodides have layered structures and are quite soft, but InI is also the mechanically most stable compound of the binary compounds. Table 1 shows the main properties of InI in comparison with the other iodides and the most common room temperature radiation detector material, (Cd, Zn)Te. InI is typically grown by the unseeded Bridgman method using a nucleation tip, but Czochralski (CZ) growth has also been demonstrated. The resulting crystals have been used successfully for radiation detection, but both resistivity and mobility are usually well below theoretically predicted values. Physical vapor transport (PVT), although much slower than melt growth, is an alternative method and has been used to grow e.g. HgI2, PbI2, BiI3, CdTe. PVT growth should eliminate or reduce inclusions and impurities since it is based on sublimation, reduce intrinsic defects due to the lower growth temperature, and reduce dislocation densities due to reduced thermal and mechanical stress. As an example, PVT-grown CdTe showed a much improved structural quality compared to Bridgman- or THM-grown material.

Cröll, Arne↗

Purification and Crystal Growth of Lead Iodide by Physical Vapor Transport Method

Lead iodide (PbI2) is a layered compound semiconductor being developed as room temperature x- and gamma-ray detector. Compared to the more studied material, mercuric iodide, PbI2 has a higher melting temperature and no phase transition until liquid phase which are indications of better mechanical properties. In this study, the source material was purified by the zone-refining process, and the purest section was extracted from center of the the zone-refined ingot to be grown by physical vapor transport (PVT) method. The zone-refined material and as-grown crystals were characterized by optical microscopy and differential scanning calorimetry (DSC) to reveal the surface morphology, purity and stoichiometry. The results shows that both materials are near-stoichiometric composition, with the purity of the as-grown crystals higher than zone-refined materials. The resistivity of the as-grown crystal (10" Omega-cm) was derived from current-voltage (I-V) measurement, and is 10 times higher than the zone-refined materials. Detail results will be presented and discussed.

Wright, G. W.↗