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At least 19 records

Tuning piezoelectric properties through epitaxy of La 2 Ti 2 O 7 and related thin films

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200ºC due to the low Curie temperature of the piezoelectric material. The strengthening the piezoelectric coupling of high-temperature piezoelectric materials, such as La 2 Ti 2 O 7 (LTO), would allow sensors to operate across a broad temperature range. The crystalline orientation and piezoelectric coupling direction of LTO thin films can be controlled by epitaxial matching to SrTiO 3 (001), SrTiO 3 (110), and rutile TiO 2 (110) substrates via pulsed laser deposition. The structure and phase purity of the films are investigated by x-ray diffraction and scanning transmission electron microscopy. Piezoresponse force microscopy is used to measure the in-plane and out-of-plane piezoelectric coupling in the films. The strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO 2 (110) results in epitaxial La 2/3 TiO 3 , an orthorhombic perovskite of interest as a microwave dielectric material and an ion conductor. La 2/3 TiO 3 can be difficult to stabilize in bulk form, and epitaxial stabilization on TiO 2 (110) is a promising route to realize La 2/3 TiO 3 for both fundamental studies and device applications. Overall, these results confirm that control of the crystalline orientation of epitaxial LTO-based materials can govern the resulting functional properties.

36 MATERIALS SCIENCE↗

Design, fabrication, and properties of 2-2 connectivity cement/polymer based piezoelectric composites with varied piezoelectric phase distribution

The laminated 2-2 connectivity cement/polymer based piezoelectric composites with varied piezoelectric phase distribution were fabricated by employing Lead Zirconium Titanate ceramic as active phase, and mixture of cement powder, epoxy resin, and hardener as matrix phase with a mass proportion of 4:4:1. The dielectric, piezoelectric, and electromechanical coupling properties of the composites were studied. The composites with large total volume fraction of piezoelectric phase have large piezoelectric strain constant and relative permittivity, and the piezoelectric and dielectric properties of the composites are independent of the dimensional variations of the piezoelectric ceramic layer. The composites with small total volume fraction of piezoelectric phase have large piezoelectric voltage constant, but also large dielectric loss. The composite with gradually increased dimension of piezoelectric ceramic layer has the smallest dielectric loss, and that with the gradually increased dimension of matrix layer has the largest piezoelectric voltage constant. The novel piezoelectric composites show potential applications in fabricating ultrasonic transducers with varied surface vibration amplitude of the transducer.

36 MATERIALS SCIENCE↗

Energy harvesting from low frequency applications using piezoelectric materials

In an effort to eliminate the replacement of the batteries of electronic devices that are difficult or impractical to service once deployed, harvesting energy from mechanical vibrations or impacts using piezoelectric materials has been researched over the last several decades. However, a majority of these applications have very low input frequencies. This presents a challenge for the researchers to optimize the energy output of piezoelectric energy harvesters, due to the relatively high elastic moduli of piezoelectric materials used to date. This paper reviews the current state of research on piezoelectric energy harvesting devices for low frequency (0–100 Hz) applications and the methods that have been developed to improve the power outputs of the piezoelectric energy harvesters. Various key aspects that contribute to the overall performance of a piezoelectric energy harvester are discussed, including geometries of the piezoelectric element, types of piezoelectric material used, techniques employed to match the resonance frequency of the piezoelectric element to input frequency of the host structure, and electronic circuits specifically designed for energy harvesters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

36 MATERIALS SCIENCE↗

Theory-Guided Synthesis of a Metastable Lead-Free Piezoelectric Polymorph

Many technologically critical materials are metastable under ambient conditions, yet the understanding of how to rationally design and guide the synthesis of these materials is limited. This paper presents an integrated approach that targets a metastable lead-free piezoelectric polymorph of SrHfO 3 . First-principles calculations predict that the previous experimentally unrealized, metastable P4mm phase of SrHfO 3 should exhibit a direct piezoelectric response (d 33 ) of 36.9 pC N -1 (compared to d 33 = 0 for the ground state). Combining computationally optimized substrate selection and synthesis conditions lead to the epitaxial stabilization of the polar P4mm phase of SrHfO 3 on SrTiO 3 . The films are structurally consistent with the theory predictions. A ferroelectric-induced large signal effective converse piezoelectric response of 5.2 pm V -1 for a 35 nm film is observed, indicating the ability to predict and target multifunctionality. Finally, this illustrates a coupled theory-experimental approach to the discovery and realization of new multifunctional polymorphs.

36 MATERIALS SCIENCE↗

Influence of piezoelectric strain on the Raman spectra of BiFeO 3 films deposited on PMN-PT substrates

In this study, BiFeO 3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg 1/3 Nb 2/3 )O 3 -0.28PbTiO 3 (PMN-PT) substrates with a conductive buffer layer (La 0.7 Sr 0.3 MnO 3 or SrRuO 3 ) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO 3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.

36 MATERIALS SCIENCE↗

Boosting Piezoelectricity by 3D Printing PVDF‐MoS 2 Composite as a Conformal and High‐Sensitivity Piezoelectric Sensor

Abstract Additively manufactured flexible and high‐performance piezoelectric devices are highly desirable for sensing and energy harvesting of 3D conformal structures. Herein, the study reports a significantly enhanced piezoelectricity in polyvinylidene fluoride (PVDF) achieved through the in situ dipole alignment of PVDF within PVDF‐2D molybdenum disulfide (2D MoS 2 ) composite by 3D printing. The shear stress‐induced dipole poling of PVDF and 2D MoS 2 alignment are harnessed during 3D printing to boost piezoelectricity without requiring a post‐poling process. The results show a remarkable, more than the eight‐fold increment in the piezoelectric coefficient ( d 33 ) for 3D printed PVDF‐8wt.% MoS 2 composite over cast neat PVDF. The underlying mechanism of piezoelectric property enhancement is attributed to the increased volume fraction of β phase in PVDF, filler fraction, heterogeneous strain distribution around PVDF‐MoS 2 interfaces, and strain transfer to the nanofillers as confirmed by microstructural analysis and finite element simulation. These results provide a promising route to design and fabricate high‐performance 3D piezoelectric devices via 3D printing for next‐generation sensors and mechanical–electronic conformal devices.

2D MoS2↗

Domain wall motion and electromechanical strain in lead-free piezoelectrics: Insight from the model system (1 - x)Ba(Zr 0.2 Ti 0.8 )O 3 -x(Ba 0.7 Ca 0.3 )TiO 3 using in situ high-energy X-ray diffraction during application of electric fields

The piezoelectric compositions (1 - x)Ba(Zr 0.2 Ti 0.8 )O 3 –x(Ba 0.7 Ca 0.3 )TiO 3 (BZT-xBCT) span a model lead-free morphotropic phase boundary (MPB) between room temperature rhombohedral and tetragonal phases at approximately x = 0.5. In the present work, in situ X-ray diffraction measurements during electric field application are used to elucidate the origin of electromechanical strain in several compositions spanning the tetragonal compositional range 0.6 ≤ x ≤ 0.9. As BCT concentration decreases towards the MPB, the tetragonal distortion (given by c/a-1) decreases concomitantly with an increase in 90° domain wall motion. The increase in observed macroscopic strain is predominantly attributed to the increased contribution from 90° domain wall motion. The results demonstrate that domain wall motion is a significant factor in achieving high strain and piezoelectric coefficients in lead-free polycrystalline piezoelectrics.

Tutuncu, Goknur↗

Nanoscale mapping of electromechanical response in ionic conductive ceramics with piezoelectric inclusions

Electromechanical (EM) response in ion conductive ceramics with piezoelectric inclusions was spatially explored using strain-based atomic force microscopy. Since the sample is composed of two dominant phases of ionic and piezoelectric phases, it allows us to explore two different EM responses of electrically induced ionic response and piezoresponse over the same surface. Furthermore, EM response of the ionic phase, i.e., electrochemical strain, was quantitatively investigated from the comparison with that of the piezoelectric phase, i.e., piezoresponse. These results could provide additional information on the EM properties, including the electrochemical strain at nanoscale.

36 MATERIALS SCIENCE↗

Hydrothermal crystal growth, piezoelectricity, and triboluminescence of KNaNbOF{sub 5}

Single crystals of the noncentrosymmetric KNaNbOF{sub 5} polymorph were grown for piezoelectric and triboluminescent measurements. Piezoelectric measurements yielded a d{sub 33} value of ±6.3 pCN{sup −1} and an effective electromechanical coupling coefficient of up to 0.1565 in the frequency range 1960–2080 kHz. Crystals of KNaNbOF{sub 5} were found to exhibit a strong triboluminscence effect visible to the naked eye as blue sparks when crystals are crushed. This triboluminescence effect is uncommon in that it is likely independent from both the piezoelectric effect and atmospheric electrical discharge. Instead, triboluminescence may originate from crystal defects or be related to an electroluminescence effect. - Graphical abstract: An optical emission visible to the naked eye as blue sparks is observed when KNaNbOF{sub 5} single crystals are fractured. - Highlights: • Single crystals of KNaNbOF{sub 5} were grown under hydrothermal conditions. • Piezoelectric and triboluminescent properties were characterized. • Piezoelectric measurements yielded a d{sub 33} value of ±pCN{sup −1}. • KNaNbOF{sub 5} exhibits strong triboluminscence visible to the naked eye as blue sparks.

36 MATERIALS SCIENCE↗

Progress towards developing neutron tolerant magnetostrictive and piezoelectric transducers

Current generation light water reactors (LWRs), sodium cooled fast reactors (SFRs), small modular reactors (SMRs), and next generation nuclear plants (NGNPs) produce harsh environments in and near the reactor core that can severely tax material performance and limit component operational life. To address this issue, several Department of Energy Office of Nuclear Energy (DOE-NE) research programs are evaluating the long duration irradiation performance of fuel and structural materials used in existing and new reactors. In order to maximize the amount of information obtained from Material Testing Reactor (MTR) irradiations, DOE is also funding development of enhanced instrumentation that will be able to obtain in-situ, real-time data on key material characteristics and properties, with unprecedented accuracy and resolution. Such data are required to validate new multi-scale, multi-physics modeling tools under development as part of a science-based, engineering driven approach to reactor development. It is not feasible to obtain high resolution/microscale data with the current state of instrumentation technology. However, ultrasound-based sensors offer the ability to obtain such data if it is demonstrated that these sensors and their associated transducers are resistant to high neutron flux, high gamma radiation, and high temperature. To address this need, the Advanced Test Reactor National Scientific User Facility (ATR-NSUF) is funding an irradiation, led by PSU, at the Massachusetts Institute of Technology Research Reactor to test the survivability of ultrasound transducers. As part of this effort, PSU and collaborators have designed, fabricated, and provided piezoelectric and magnetostrictive transducers that are optimized to perform in harsh, high flux, environments. Four piezoelectric transducers were fabricated with either aluminum nitride, zinc oxide, or bismuth titanate as the active element that were coupled to either Kovar or aluminum waveguides and two magnetostrictive transducers were fabricated with Remendur or Galfenol as the active elements. Pulse-echo ultrasonic measurements of these transducers are made in-situ. This paper will present an overview of the test design including selection criteria for candidate materials and optimization of test assembly parameters, data obtained from both out-of-pile and in-pile testing at elevated temperatures, and an assessment based on initial data of the expected performance of ultrasonic devices in irradiation conditions.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Multi-Level Information Storage Using Engineered Electromechanical Resonances of Piezoelectric Wafers: A Concept Piezoelectric Quick Response (PQR) Code

A piezoelectric-based method for information storage is presented. It involves engineering the polarization profiles of multiple piezoelectric wafers to enhance/suppress specific electromechanical resonances. These enhanced/suppressed resonances can be used to represent multiple frequency-dependent bits, thus enabling multi-level information storage. This multi-level information storage is demonstrated by achieving three information states for a ternary encoding. Using the three information states, we present an approach to encode and decode information from a 2-by-3 array of piezoelectric wafers that we refer to as a concept Piezoelectric Quick Response (PQR) code. The scaling relation between the number of wafers used and the cumulative number of information states that can be achieved with the proposed methodology is briefly discussed. Potential applications of this methodology include tamper-evident devices, embedded product tags in manufacturing/inventory tracking, and additional layers of security with existing information storage technologies.

47 OTHER INSTRUMENTATION↗

Reactive sputter deposition of piezoelectric Sc 0.12 Al 0.88 N for contour mode resonators

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. This work describes 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Furthermore, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.

36 MATERIALS SCIENCE↗

Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Bright reddish-orange emission and good piezoelectric properties of Sm{sub 2}O{sub 3}-modified (K{sub 0.5}Na{sub 0.5})NbO{sub 3}-based lead-free piezoelectric ceramics

Reddish orange-emitting 0.948(K{sub 0.5}Na{sub 0.5})NbO{sub 3}-0.052LiSbO{sub 3}-xmol%Sm{sub 2}O{sub 3} (KNN-5.2LS-xSm{sub 2}O{sub 3}) lead-free piezoelectric ceramics with good piezoelectric properties were fabricated in this study, and the photoluminescence and electrical properties of the ceramics were systematically studied. Results showed that Sm{sub 2}O{sub 3} substitution into KNN-5.2LS induces a phase transition from the coexistence of orthorhombic and tetragonal phases to a pseudocubic phase and shifts the polymorphic phase transition (PPT) to below room temperature. The temperature stability and fatigue resistance of the modified ceramics were significantly improved by Sm{sub 2}O{sub 3} substitution. The KNN-5.2LS ceramic with 0.4 mol. % Sm{sub 2}O{sub 3} exhibited temperature-independent properties (25–150 °C), fatigue-free behavior (up to 10{sup 6} cycles), and good piezoelectric properties (d{sub 33}{sup * }= 230 pm/V, d{sub 33} = 176 pC/N, k{sub p} = 35%). Studies on the photoluminescence properties of the samples showed strong reddish-orange emission upon blue light excitation; these emission intensities were strongly dependent on the doping concentration and sintering temperature. The 0.4 mol. % Sm{sub 2}O{sub 3}-modified sample exhibited temperature responses over a wide temperature range of 10–443 K. The maximum sensing sensitivity of the sample was 7.5 × 10{sup −4} K at 293 K, at which point PPT occurred. A relatively long decay lifetime τ of 1.27–1.40 ms and a large quantum yield η of 0.17–0.19 were obtained from the Sm-modified samples. These results suggest that the KNN-5.2LS-xSm{sub 2}O{sub 3} system presents multifunctional properties and significant technological potential in novel multifunctional devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High piezoelectric performance and temperature dependence of ferroelectric and piezoelectric properties of Bi(Mg 0.5 Zr 0.5 )O 3 –PbTiO 3 near morphotropic phase boundary

According to consideration on the average radius of B-site cation of BiMeO 3 , we reported that the Bi(Mg 0.5 Zr 0.5 )O 3 –xPbTiO 3 compound at the morphotropic phase boundary (MPB) of x=0.58 possesses a piezoelectric coefficient d33 as high as 306 pC/N. The optimal piezoelectric and ferroelectric properties near the MPB might be attributed to its lower lattice distortion, as described by change of FWHM value for {1 1 1}PC peaks. Furthermore, Bi(Mg 0.5 Zr 0.5 )O 3 –xPbTiO 3 displayed stable ferroelectric and piezoelectric properties over a temperature range from ambient temperature to above 160 °C, as exhibited by temperature dependence polarization and strain versus electric field curves and thermal depoling process.

36 MATERIALS SCIENCE↗

Phase-field-guided design of record-high piezoelectricity and discovery of simultaneous high light transparency and high piezoelectricity in relaxor ferroelectrics

Here, the phase-field method has been extensively applied to predicting the domain structures and their responses to external fields and understanding experimentally observed domain states under different electromechanical conditions in ferroelectric heterostructures. This article highlights the successful examples of phase-field applications in guiding the design of relaxor ferroelectric ceramics and crystals with record-high piezoelectricity and the discovery of simultaneous high light transparency and piezoelectricity of relaxor ferroelectric crystals for a wide range of biomedical, robotics, and optoelectronics applications.

36 MATERIALS SCIENCE↗