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Integrated Large-Scale Data Management Platform for Photovoltaic Power Conversion Equipment (PCE) Reliability Data
To meet the demand for accuracy and real-time capability of PV system degradation evaluation, massive volume data is needed to run high-fidelity and high-efficiency simulations and perform advanced data analysis. However, PV farm operators have a series of difficulties with PV inverter data, such as data collection from multiple channels, massive data storage, data management and massive data analysis. To address these challenges, we developed an integrated data management platform capable of data acquisition, processing, storage, query, and performing big data analysis utilizing AI algorithms. The platform can also achieve data correctness verification and provide an effective distributed data management solution to retrieve massive data and establish a connection to distributed computational frameworks.
Integrated Large-Scale Data Management Platform for Photovoltaic Power Conversion Equipment (PCE) Reliability Data: Preprint
To meet the demand for accuracy and real-time capability of PV system degradation evaluation, massive volume data is needed to run high-fidelity and high-efficiency simulations and perform advanced data analysis. However, PV farm operators have a series of difficulties with PV inverter data, such as data collection from multiple channels, massive data storage, data management and massive data analysis. To address these challenges, we developed an integrated data management platform capable of data acquisition, processing, storage, query, and performing big data analysis utilizing AI algorithms. The platform can also achieve data correctness verification and provide an effective distributed data management solution to retrieve massive data and establish a connection to distributed computational frameworks.
Te/CdTe and Al/CdTe Interfacial Energy Band Alignment by Atomistic Modeling
A synergistic approach that incorporates first-principles atomistic modeling with numerical device simulations is used to systematically evaluate the role of heterointerfaces within metal-chalcogenide-based photovoltaic technologies. Two interfaces involving either a tellurium back contact or aluminum back electrode combined with a cadmium telluride absorber layer within cadmium-telluride-based thin-film solar cells are investigated on an atomic scale to determine the mechanisms contributing to variations in device performance. Electronic structures and predicted charge transport behavior with respect to cadmium and tellurium termination of the absorber layer are studied along the polar oriented CdTe{111} facets. The computational methodology reveals a noticeable contrast between the Schottky barrier forming Al/CdTe interface versus the Type I Te/CdTe heterojunction. Greater band bending features are exhibited by the cadmium termination as opposed to the tellurium termination for each interface case. Subsequent device modeling suggests that 3.6% higher photovoltaic conversion efficiency is achievable for the cadmium termination relative to the tellurium termination of the Te/CdTe interface. Based strictly on an idealistic representation, both interface models show the importance of atomic-scale interfacial properties for cadmium telluride solar cell device performance with their bulk properties being validated in comparison to published experimental data. Here, the synergistic approach offers a suitable method to analyze solar cell interfaces through a predictive computational framework for the engineering and optimization of metal-chalcogenide-based thin-film photovoltaic technologies.
GaAs solar cells grown on acoustically spalled GaAs substrates with 27% efficiency
Acoustic spalling presents a potentially low-cost reuse pathway for III–V epitaxial growth substrates via exfoliation of device layers with recovery and reuse of the substrate. However, surface features formed during spalling can reduce the performance of subsequently grown devices. Here, we develop an understanding of how the surface morphology of acoustically spalled substrates affects GaAs solar cell performance and develop strategies to mitigate these impacts. We demonstrate that minor planarization of the surface by wet chemical etching and/or epitaxial growth, or the redesign of the device structure to thicken critical layers, prevents performance degradation. Using these strategies, we demonstrate a 0.25 cm 2 single-junction GaAs device with 26.9% ± 0.2% photovoltaic conversion efficiency under the AM1.5G spectrum grown on an acoustically spalled substrate. These results enable the growth of high-performance III–V devices on non-traditional substrates with the potential for significantly reduced device costs.
Formation trajectories of solution-processed perovskite thin films from mixed solvents
The engineering of mixed-solvent formulations and their evaporation conditions are key to reproducible perovskite coatings for high-performance photovoltaics. Here, we report a lumped-parameter evaporation model to predict the evolution of a perovskite ink liquid film over time (solvent ratio, solute concentration, and film thickness). The drying-rate model is validated via in situ film-thickness measurements, and the predicted transient liquid film state is mapped as a process path. These methods allow for the prediction of process sensitivity to local environmental factors and the understanding and visualization of a broader processing parameter space enabled through the coupling of process and ink engineering. Process maps are applied to create a new framework for scalable perovskite coating development with a goal of improving the reproducibility and transferability of perovskite fabrication. This approach is demonstrated with blade-coated FA 0.83 Cs 0.17 PbI 3 photovoltaic devices, improving the photovoltaic conversion efficiency from 17.5% ± 1.7% to 20.3% ± 0.6%.
Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se 2 Solar Cells Fabricated using Different Methods
Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se 2 . Herein, voltage loss analysis of Cu(In,Ga)Se 2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.
Improving the barrier properties of tin oxide in metal halide perovskite solar cells using ozone to enhance nucleation
Here we investigate tin oxide growth on fullerene (C 60 ) by atomic layer deposition (ALD) for C 60 /oxide bilayer electron selective contacts in P-I-N metal halide perovskite (MHP) solar cells. An in situ ozone functionalization step is incorporated in an ALD SnO x process to suppress sub-surface growth, leading to improved internal barrier performance of ALD SnO x thin films grown on fullerene surfaces. We show that this approach decreases the water-vapor transmission rate of C 60 /ALD SnO x barriers by an order of magnitude and improves the barrier properties against gas, solvent, and halide migration. Furthermore, ozone-treated SnO x barriers can narrow photovoltaic performance distribution without compromising efficiency. We demonstrate the universality of this approach in wide-, intermediate-, and low-gap perovskite systems and further show that enhancement of the ALD barrier layer is critical toward improving the yield of all-perovskite tandem solar cells. Two-terminal all-perovskite tandem solar cells incorporating ozone nucleation are reported at over 24% photovoltaic conversion efficiency.
Solar power system using hybrid trough and photovoltaic two-stage light concentration
A solar power method is provided using two-stage light concentration to drive concentrating photovoltaic conversion in conjunction with thermal collection. The method concentrates light rays received in a plurality of transverse planes towards a primary linear focus in an axial plane, which is orthogonal to the transverse planes. T band wavelengths of light are transmitted to the primary linear focus. R band wavelengths of light are reflected towards a secondary linear focus in the axial plane, which is parallel to the primary linear focus. The light received at the primary linear focus is translated into thermal energy. The light received at the secondary linear focus is focused by optical elements along a plurality of tertiary linear foci, which are orthogonal to the axial plane. The focused light in each tertiary primary focus is focused into a plurality of receiving areas, and translated into electrical energy.
Eye-Safe 1.5 and 2.0 Micron Laser Power Conversion Using Metamorphic InGaAs Photovoltaic Devices
Laser power transmission at 1.5 and 2.0 microns are considered eye-safe up to 0.1 W/cm2 irradiance. Further, the atmospheric bands at these two wavelengths may provide the highest optical transmission through the atmosphere in hazy conditions. By slowly changing the lattice-constant of InGaAs with a Compositionally Graded Buffer (CGB), we have fabricated InGaAs photovoltaic (PV) devices over a wide range of bandgaps useful for multijunction concentrating photovoltaic devices, thermophotovoltaic devices, and Laser Power Converters (LPC). Here, we have demonstrated monochromatic power conversion of 1.5-micron light with an eye-safe efficiency of 39.8% at 0.1 W/cm2 with InGaAs devices lattice-matched to InP with an Antireflection Coating (ARC). We have also demonstrated 30.2% and 24.5% eye-safe LPC efficiency of metamorphic InGaAs devices grown on GaAs substrates using GaInP and AlGaAsP CGBs, respectively. Finally, we have demonstrated metamorphic InGaAs devices grown on InP and GaAs substrates that are estimated to have eye-safe LPC efficiencies at 2.0 microns of 27.4% and 20.9% respectively. The efficiencies of all these LPC devices continues to increase up to about 30-70 times the eye-safe irradiance.
High-voltage monocrystalline Si photovoltaic minimodules based on poly -Si/SiO x passivating contacts for high-power laser power conversion
By using photovoltaic cells under high-intensity laser illumination, much higher photoconversion efficiencies are obtained than under the solar spectrum. Here we demonstrate a monocrystalline Si based minimodule to convert laser light into electricity using edge-illuminated Si "minicells" based on polysilicon on silicon oxide passivating contacts. Ten fully metallized devices were stacked in series and illuminated from the edge, creating a high-voltage, low-current minimodule that mitigates resistive and Auger-Meitner losses. The minimodule shows a high open-circuit voltage of >5 V when tested under 1-Sun illumination and >7 V at higher illumination intensities when tested with a flash simulator. The fill factor in these minimodules is limited by shunting at low illuminations but reaches a maximum of ~78% for higher illumination intensities >40 Suns (current density >1200 mA/cm 2 ), indicating that the minimodules are not limited by series resistance up to 40 Suns. Under 1000 nm monochromatic light, we measure efficiencies >40% at > 40 Suns equivalent illumination, showing the potential of passivated contact Si cells for laser power conversion.
Infrared transmissive concentrated photovoltaics for coupling solar electric energy conversion to solar thermal energy utilization
The use of photovoltaic (PV) cells to convert solar energy to electricity is becoming increasingly prevalent; however, there are still significant limitations associated with the widespread adoption of PV cells for electricity needs. There is a clear need for a high efficiency solar power system that supplies electricity at a competitive cost and that provides for an on-demand supply of electricity as well as energy storage. By combining aspects of concentrated solar power and concentrated photovoltaics, the present invention provides a device that enables the conversion of sunlight to electricity at very high efficiencies and that enables the transmission of thermal energy to heat storage devices for later use. The disclosed device enables transmissive CPV through the use of a multijunction PV cell mounted on a transparent base. The use of a multijunction cell allows for highly efficient absorption of light above the bandgap of the lowest bandgap subcell. The transparent base permits transmission of a high percentage of the remaining light below the bandgap of the lowest bandgap subcell. The present invention also discloses a method of generating electricity through the use of a transmissive CPV device. Sunlight is concentrated onto one or more surfaces of the device. High energy light is absorbed by a multijunction PV cell and converted directly to electricity, while low energy light is transmitted through the device into a thermal storage device, which may then be coupled to a heat engine to generate dispatchable electricity.
Scientific frontiers of agrivoltaic cropping systems
Agrivoltaic (AV) systems integrate agriculture with electricity conversion through photovoltaic (PV) modules. Compared with conventional ground-mounted PV systems, AV systems can reduce land-use competition and offer agronomic and economic advantages, such as more stable crop production and additional farm income. However, AV systems can decrease agricultural performance and are typically 20-90% costlier to install than conventional PV systems. Here, in this Review, we analyse the implementation of AV cropping systems to preserve agricultural activities and highlight challenges and barriers. The global electricity potential of AV systems is ~66-385 PWh annually, depending on PV technology and installation density, if deployed in the most suitable areas, without accounting for grid availability. Scaling up has been hindered by crop selection for shading conditions, decreased energy conversion per unit of land area and issues with social acceptance, landscape impact and environmental sustainability. These issues can be addressed by developments such as wavelength-selective PV; system configurations, such as optimizing module spacing to reduce shading; and operational methods, such as optimizing tracking strategies and integrating agricultural infrastructure. Cross-sector policies can support AV systems by addressing the needs of diverse stakeholders over shared land resources. Further development will require collaboration among the design, performance, deployment and systems research communities.
Duty-Cycle Predictive Control of Quasi-Z-Source Modular Cascaded Converter Based Photovoltaic Power System
A duty-cycle predictive control is proposed for dc grid integration of front-end isolated quasi-Z-source modular cascaded converter (qZS-MCC) photovoltaic (PV) power system. The post-stage qZS half-bridge dc-dc converter deals with PV maximum power point tracking, dc grid integration, and dc-link voltage balance; whereas, the front-end isolation converters operate at a constant duty cycle of 50%. Thus, it saves control hardware resources while overcoming challenges from PV-panel voltage variations and dc-bus voltage limit. The proposed control uses the derived circuit model to predict the global active-state duty cycle for grid-connected current control and predict the shoot-through duty cycles for dc-link voltage balance, achieving a fast and accurate tracking target. The proposed control method has advantages of: i) eliminating weighting factors that exist in conventional model predictive control (MPC), ii) no sophisticated loop parameters design that exists in proportional-integral (PI) control, iii) operating at constant switching frequency that is different from the conventional MPC with variable switching frequency. Simulation and experimental tests are carried out to verify the effectiveness of the proposed control method and compare with the PI-based control system.
Farm-level Interactions Study of a Novel Tri-port Soft-switching Medium-Voltage String Inverter (MVSI) based Large-scale PV-Plus-Storage Farms
A medium-voltage photovoltaic power conversion unit supported by battery based on a novel topology of soft switching solid state transformer is presented in this paper. It can reduce the Levelized Cost of Energy (LCOE) of PVS farm in an extended degree. However, its capability to provide grid-support services, such as frequency response, reactive power support, etc, have not been demonstrated. A series/parallel combination of these modules form a large 20 MVA solar farm. To validate them with reduced computation burden, a small-signal model of MVSI is firstly derived and validated in this paper. The model has been validated to match the full-switch model in both steady-state and dynamic conditions. Next, a farm-level simulation based on the proved small-signal model was implemented to demonstrate grid-support services. Real irradiation date from NREL is used to show the operational capabilities of the system. As a result, the overall farm is simulated based on MATLAB/Simulink domain to check the performance for various cases namely: power transfer from dc-ac side, reactive power support during grid voltage sag and utilization of battery during grid voltage disturbance or partial shading over PV panels.
Solar Cell Efficiency Tables (Version 66)
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since January 2025 are reviewed.
CeTaN 3 and CeNbN 3 : Prospective Nitride Perovskites with Optimal Photovoltaic Band Gaps
Perovskites constitute an exceptionally tunable materials family with diverse applications in electronics, optoelectronics, energy, and quantum technologies. Out of the thousands of known perovskites, the majority of compounds are oxides, halides, and chalcogenides. In contrast, only two nitride perovskites are currently known. In this work we perform a thorough ab initio computational screening of possible nitride perovskites, and we identify two new compounds, CeNbN 3 and CeTaN 3 , with band gaps in the near-infrared to visible range, depending on temperature. In their room-temperature orthorhombic phase, we predict that both compounds exhibit direct or quasidirect band gaps in the range 1.1–2.0 eV, with the Pnma phases matching the Shockley–Queisser limit for photovoltaic energy conversion efficiency. Further, these compounds are also predicted to be strong light absorbers, with absorption coefficients surpassing those of high-performance semiconductors such as GaAs and CH 3 NH 3 PbI 3 . The present findings reveal a potentially new class of nitride semiconductors with promise for electronics, optoelectronics, and light harvesting and for integration with existing nitride-based lighting technology.
Ln 10 S 14 O (Ln = La, Pr, Nd, Sm) Oxysulfides: A Series of Direct n-Type Semiconductors
Lanthanoid oxysulfides are promising materials for technological applications owing to their magnetic, photoluminescent, catalytic, and optoelectronic properties. In this work, we report the solid-state synthesis and structural characterization of Ln 10 S 14 O (Ln = La, Ce, Pr, Nd, Sm) oxysulfides. Then, we present a thorough discussion on their electronic and photophysical properties. Through Tauc plot analysis and the derivation of the absorption spectrum fitting method (DASF), we determine that all oxysulfides have direct band gaps with energies of 2.84 eV (La), 2.02 eV (Ce), 2.56 eV (Pr), 2.64 eV (Nd), and 2.41 eV (Sm). Furthermore, surface photovoltage spectroscopy (SPS) shows photovoltage (ΔCPD) values of –0.4 to –1.1 V for La-, Pr-, Nd-, and Sm-containing compounds when illuminated near the optical band gap, indicating that these oxysulfides are n-type semiconductors, which is consistent with Mott–Schottky analysis. Photovoltages under sub-band gap illumination energy and photovoltage decay data suggest mid-band gap states possibly arising from the lanthanoid 4f orbitals and/or defects within the crystal structure or at the particle surfaces. These photophysical properties suggest possible applications of the oxysulfides in photoelectrochemical and photovoltaic energy conversion.