The present status of very high energy p plus p, p bar plus p, pi plus or minus plus p and k plus or minus plus p scattering
High energy elastic scattering, charge exchange scattering, and polarization experiments
POLARIZATION↗
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Measurements of 15.11-MeV gamma-ray flux produced in the reactions C-12(p, p')-C-12*(15.11 MeV) and O-16(p, p' alpha)-C-12*(15.11 MeV)
The flux of 15.11 MeV gamma rays relative to the flux of 4.44 MeV gamma rays which are emitted from the corresponding states of C-12 are a sensitive measure of the spectrum of exciting particles in solar flares and other cosmic sources. Emission of 15.11 MeV gamma rays may result not only from the direct excitation of C-12 but also from the interaction O-16 (p,p' alpha) C-12* sup 15.11 MeV. Although the cross sections for the direct reaction was studied extensively, the cross section for the spallation interaction with O-16 is not reported in the literature. Preliminary measurements demonstrated the feasibility of measuring the production of 15.11 MeV gamma rays by proton interactions with O-16 using the University of Maryland cyclotron facility. For both carbon and oxygen targets the flux of 15.11 MeV gamma rays is being measured relative to the flux of 4.44 MeV gamma rays. The gamma ray emission from de-excitation of the giant dipole resonances is being measured.
Lapides, J. R.↗
Inclusive dielectron cross sections in p + p and p + d interactions at beam energies from 1.04 to 4.88 GeV
Measurements of dielectron production in p + p and p + d collisions with beamkinetic energies from 1.04 to 4.88 GeV are presented. The differential cross section is presented as a function of invariant pair mass, transverse momentum, and rapidity. The shapes of the mass spectra and their evolution with beam energy provide information about the relative importance of the various dielectron production mechanisms in this energy regime. The p + d to p + p ratio of the dielectron yield is also presented as a function of invariant pair mass, transverse momentum, and rapidity. The shapes of the transverse momentum and rapidity spectra from the p + d and p + p systems are found to be similar to one another for each of the beam energies studied. The beam energy dependence of the integrated cross sections is also presented.
NASA Discipline Radiation Health↗
Characterization of three types of silicon solar cells for SEPS deep-space missions. Volume 2: Current voltage characteristics of Solarex textured P(+)8 to 10 mil, planar P(+)8 to 10 mil and planar P(+)2 mil cells as a function of temperature and intensity
Three types of high performance silicon solar cells, textured P(+)8 to 10 mil, planar P(+)8 to 10 mil and planar P(+)2 mil were evaluated for their low temperature and low intensity (LTLI) performance. Sixteen cells of each type were subjected to 11 temperatures and 9 intensities. The textured P(+)8 to 10 mil cells provided the best performance both at 1 astronomical unit and at LTLI conditions. The average efficiencies of this cell were 14.5 percent at 1 solar constant/+25 C and 18.7 percent at 0.086 solar constant/-100 C.
Whitaker, A. F.↗
Polaribacter gen. nov., with three new species, P. irgensii sp. nov., P. franzmannii sp. nov. and P. filamentus sp. nov., gas vacuolate polar marine bacteria of the Cytophaga-Flavobacterium-Bacteroides group and reclassification of 'Flectobacillus glomeratus' as Polaribacter glomeratus comb. nov
Several psychrophilic, gas vacuolate strains of the Cytophage-Flavobacterium-Bacteroides (CFB) phylogenetic group were isolated from sea ice and water from the Arctic and the Antarctic. The closest taxonomically defined species by 16S rRNA sequence analysis is 'Flectobacillus glomeratus'. However, 'Flc. glomeratus' is phylogenetically distant from the Flectobacillus type species, Flc. major. On the basis of phenotypic, genotypic and 16S rRNA sequence analyses we propose a new genus, Polaribacter, with three new species, Polaribacter irgensii strain 23-P (ATCC 700398), Polaribacter franzmannii strain 301 (ATCC 700399) and Polaribacter filamentus strain 215 (ATCC 700397). P. filamentus is the type species of the genus. None of these species exhibits a cosmopolitan or bipolar distribution. This is the first taxonomic description of gas vacuolate bacteria in the CFB group. Additionally, we propose that 'Flc. glomeratus' be reclassified to the genus Polaribacter as P. glomeratus, comb. nov.
NASA Discipline Exobiology↗
Synthesis of current-switching circuits with cell matching using p-n-p and n-p-n transistors
Logical circuit for analysis of switching circuits with cell matching using p-n-p and n-p-n transistors
TRANSISTOR↗
The p-p and p-t final state interactions in the reaction He-3/d,tp/p
Coincidence cross section measurements to determine p - p and p - t final state interactions in He-3/d, tp/p reaction
Bercaw, R. W.↗
P(P bar)P elastic scattering and cosmic ray data
It is shown that the total cross section for pp elastic scattering at cosmic ray energies, as well as the total cross section, the slope parameter b(s,t) and the differential cross section for small momentum transfer at ISR and collider energies for p(p)p elastic scattering can be simultaneously fitted by using a simple Regge pole model. The results of this theory is discussed in detail.
FAZAL-E-ALEEM↗
Kinetics of the Reactions of O((sup 3)P) and Cl((sup 2)P) with HBr and Br2
A laser flash photolysis-resonance fluorescence technique has been employed to study the kinetics of reactions (1)-(4) as a function of temperature. (1) O((sup 3)P) + Br2 yields BrO + Br((sup 2)P(sub 3/2)) at 255-350 K; (2) Cl((sup 2)P) + Br2 yields BrCl + Br((sup 2)P(sub 3/2)) at 298-401 K; (3) O((sup 3)P) + HBr yields OH + Br((sup 2)P(sub J)) at 250-402 K; (4) Cl((sup 2)P) + HBr yields HCl + Br((sup 2)P(sub J)) at 257-404 K. In all cases, the concentration of the excess reagent, i.e, HBr or Br2, was measured in situ in the slow flow system by UV-visible photometry. Heterogeneous dark reactions between XBr (X equals H or Br) and the photolytic precursors for Cl((sup 2)P) and O((sup 3)P) (Cl2 and O3, respectively) were avoided by injecting minimal amounts of precursor into the reaction mixture immediately upstream from the reaction zone. The following Arrhenius expressions summarize our results (errors are 2 sigma and represent precision only, units are cu cm/(molecule.s): k(sub 1) = (1.76 +/- 0.80) x 10(exp -11 exp[(40 +/- 100)/T]; k(sub 2) = (2.40 +/- 1.25) x 12(exp -10) exp[-(144 +/- 176)/T]; k(sub 3) = (5.11 +/- 2.82) x 10(exp -12) exp[-(1450 +/- 160)/T]; k(sub 4) = (2.25 +/- 0.56) x 10(exp -11) exp[-(400 +/- 80)/T]. The consistency (or lack thereof) of our results with those reported in previous kinetics and dynamics studies of reactions (1)-(4) is discussed.
Nicovich, J. M.↗
Radiation Near 2f(sub p) and Intensified Emissions Near f(sub p) in the Dayside and Nightside Auroral Region and Polar Cap
This paper reports the discovery in the DE 1 data of propagating radiation near 2f(sub p) (the H component) and relatively intense electromagnetic waves near f(sub p) with fields typically less than or approximately equal to 1 mV/m (the PF or plasma frequency component) on both the dayside and the nightside of Earth. These emissions are observed at auroral and polar cap latitudes for radial distances ranging from 2.5 to 4.5 R(sub E). The H component is unique in that no other 2f(sub p) emissions are known to be generated where the electron gyrofrequency f(sub g) exceeds 2f(sub p). Since existing theories for 2f(sub p) radiation assume f(sub g)/f(sub p) less than 1, new theories will be required to explain the H component. The PF waves near f(sub p) are electromagnetic, but with large ratios E/cB approximately 20. On the basis of cold plasma theory, the wave frequencies and the ratios E/cB, the PF component plausibly consists of zeta-mode and/or whistler mode waves near f(sub p), presumably driven by an electron instability. The H emissions have modest bandwidths of approximately 50% at frequencies ranging from 5 to 20 kHz. Grounds for interpreting the H component as emissions generated near 2f(sub p) are provided by the very good frequency tracking of the PF and H components and typical frequency ratios near 2.0. Strong evidence exists that part of the H component is propagating, electromagnetic radiation, based on propagation effects and spin modulation patterns. However, no magnetic signals have yet been detected for the H component, so that it could be partly electrostatic. Cold plasma theory and the observed wave characteristics favor interpreting the H component as composed of omicron mode and/or zeta mode signals. Combining the DE 1 observations with rocket observations, it is predicted that the much more intense Langmuir-like fields observed in the low altitude auroral zones should also generate observable 2f(sub p) radiation. This prediction should be testable using Polar and future rocket flights. Directions for future research are also described.
Cairns, Iver H.↗
Measurement and analysis of distribution coefficients in Fe-Ni alloys containing S and/or P. I - K sub Ni and K sub P
The distribution coefficients of Ni and P in Fe-Ni-S-P alloys are determined using a plane front solidification technique. It is found that the distribution coefficient of Ni is altered only when both S and P are present as alloy constituents; the coefficient increases with S and P contents in the liquid alloy and varies from 0.9 to 1.30. The behavior of the distribution coefficient of P is determined by the S/P ratio in the liquid; the coefficient increases with the S/P ratio and varies from 0.25 to 5.8. Expressions are presented which relate the distribution coefficients of Ni and P to the S and P contents in the liquid.
Sellamuthu, R.↗
Observational and theoretical analyses of polar cap/auroral region f(sub p) and 2 f(sub p) emissions using the polar and DE 1 satellites
The objective of this proposal was to conduct a comprehensive observational and theoretical investigation, including 2-D numerical simulations of emissions that occur near f(sub p) and 2 f(sub p) as observed by the Dynamics Explorer 1 (DE 1) spacecraft in the mid-altitude polar magnetosphere. Electrostatic electron plasma waves (or Langmuir waves) and associated electromagnetic (ETD) radiation near f(sub p) and 2 f(sub p) have previously been observed associated with the Earth's foreshock and in coronal/solar wind type II and III solar radio bursts. The observations of similar emissions in the terrestrial polar magnetosphere have not been previously reported and are important for a better understanding of the range of generation processes. We have been cataloging the location, electric and magnetic intensity, polarization, bandwidth, etc. of the emissions. The theoretical analysis included linear and nonlinear plasma theory. The goal was to fully describe the generation processes for both the f(sub p) (PF component) and 2 f(sub p) (H component) emissions. Although this goal was not completely accomplished, we have made significant advances in our understanding of these emissions.
Menietti, J. D.↗
A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion
The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.
Faur, M.↗
High performance etchant for thinning p(+)-InP and its application to p(+)n InP solar cell fabrication
An etchant, namely (o-H3PO4)u: (HNO3)v: (H2O2)t: (H2O)1-(u+v+t) is developed for thinning, after contacting, the p(+) emitter layer of p(+)n InP structures made by thermal diffusion. Varying u, v, and t, reproducible etch rates of 5 to 110 nm/min are obtained. After thinning the 0.6- to 2.5-micron thick p(+) InP layer down to 60-250 nm, specular surfaces are obtained at up to 80 nm/min etch rate. Due to its intrinsic qualities the resisual P-rich oxide after thinning the emitter layer provides surface passivation of p(+) InP surfaces and can also serve as a first-layer AR coating.
Faur, Maria↗
Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures
High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.
Chatterjee, B.↗
Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures
Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.
Chatterjee, Basab↗
Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures
Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.
Chatterjee, B.↗
Compendium of NASA Data Base for the Global Tropospheric Experiment's Transport and Chemical Evolution Over the Pacific (TRACE-P): P-3B - Volume 2
This report provides a compendium of NASA aircraft data that are available from NASA's Global Tropospheric Experiment's (GTE) Transport and Chemical Evolution over the Pacific (TRACE-P) Mission. The broad goal of TRACE-P was to characterize the transit and evolution of the Asian outflow over the western Pacific. Conducted from February 24 through April 10, 2001, TRACE-P integrated airborne, satellite- and ground based observations, as well as forecasts from aerosol and chemistry models. The format of this compendium utilizes data plots (time series) of selected data acquired aboard the NASA/Dryden DC-8 (vol. 1) and NASA/Wallops P-3B (vol. 2) aircraft during TRACE-P. The purpose of this document is to provide a representation of aircraft data that are available in archived format via NASA Langley's Distributed Active Archive Center (DAAC) and through the GTE Project Office archive. The data format is not intended to support original research/analyses, but to assist the reader in identifying data that are of interest.
Kleb, Mary M.↗