Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Organic semiconductors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Organic Nano-Junctions: Linking Nanomorphology and Charge Transport in Organic Semiconductor Nanoparticles for Organic Photovoltaic Devices

In this study, innovative nanoscale devices are developed to investigate the charge transport in organic semiconductor nanoparticles. Using different steps of lithography techniques and dielectrophoresis, planar organic nano-junctions are fabricated from which hole mobilities are extracted in a space charge-limited current regime. Subsequently, these devices are used to investigate the impact of the composition and morphology of organic semiconductor nanoparticles on the charge mobilities. Pure donor nanoparticles and composite donor:acceptor nanoparticles with different donor compositions in their shell are inserted in the nanogap electrode to form the nano-junctions. The results highlight that the hole mobilities in the composite nanoparticles decrease by two-fold compared to pure donor nanoparticles. However, no significant change between the two kinds of composite nanoparticle morphologies is observed, indicating that conduction pathways for the holes are as efficient for donor proportion in the shell from 40% to 60%. Organic photovoltaic (OPV) devices are fabricated from water-based colloidal inks containing the two composite nanoparticles (P3HT:eh-IDTBR and P3HT:o-IDTBR) and no significant change in the performances is observed in accordance with the mobility results. Through this study, the performance of OPV devices have been successfully correlated to the transport properties of nanoparticles having different morphology via innovative nanoscale devices.

42 ENGINEERING↗
DOE OSTI2025

Charge Separation at Organic Interfaces with Near-Zero Energy Offset: A Step toward Designing Inorganic-like Organic Semiconductors

For organic semiconductors, it is often presumed that an energy level offset at the donor–acceptor (D-A) interface is required to provide the driving force for charge separation (CS). This energy level offset unavoidably leads to a voltage loss in organic photovoltaics. In this work, by using zinc phthalocyanine (ZnPc) and fluorinated zinc phthalocyanine (F 4 ZnPc) as a model D/A interface, we found that spontaneous CS, with an enthalpy increase of ∼0.3–0.4 eV, can occur even with an interfacial energy offset as small as ∼0.1 eV. This enthalpy-increase CS process is driven by entropy. The entropic driving force can be enhanced by two factors: (1) a point-like spatial contact between the delocalized electron and hole wave function in the charge transfer exciton; (2) a small band bending near the interface originating from long-range electrostatic interaction. Our work demonstrates that effective CS can occur at interfaces with a near-zero energy level offset, which means that the energy loss at the D/A interface can be avoided.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Catching the Killer: Dynamic Disorder Design Rules for Small–Molecule Organic Semiconductors

Small-molecule organic semiconductors are promising materials for applications ranging from solar cells to medical sensors. Their nearly infinite design space means that, in theory, it is possible to tailor the material to the exact specifications of a particular application. In reality; however, design rules to improve mobility (μ) remain elusive because of the complex calculations required to understand its limiters. Transient localization theory posits that charge carriers are slowed down by the collective phonon motions, called dynamic disorder, which localize charge carriers temporarily. Traditionally, a mode-by-mode analysis is performed to try and identify “killer” modes. Herein, the flaws are demonstrated with this analysis and present a streamlined simulation workflow that simplifies simulation of dynamic disorder and enables engineering of new molecular structures based on phonon dynamics. This workflow is combined with a novel visualization technique that enables per-atom insights into how μ is limited. Furthermore, this workflow is applied and analyzed to a series of -acenes and a series of BTBT-based molecules. Then design rules are identified in each series that identify possible ways to improve the μ beyond current experimental limits using phonon engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors

High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D*) over 10 12 Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10 12 Jones at 1.02 μm, which is the highest D* for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D* in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Generic Behavior of Ultrastability and Anisotropic Molecular Packing in Codeposited Organic Semiconductor Glass Mixtures

Vapor-deposited glass mixtures of organic semiconductors commonly serve as active layers in organic electronic devices, whose lifetime and performance are strongly influenced by the stability and structure of these mixed glasses. Here, we study the stability and anisotropic molecular packing of six co-deposited organic semiconductor glass mixtures with 50:50 weight ratio, by differential scanning calorimetry and spectroscopic ellipsometry. We also find that all six binary systems exhibit high kinetic stability and significantly reduced enthalpy relative to the corresponding liquid-cooled glassy mixtures (ultrastable behavior), even for systems where the glass transition temperatures of the components differ by more than 90 K. Furthermore, we demonstrate that the birefringence of a co-deposited glass mixture, a measure of its anisotropic packing, can be predicted from the birefringence of glasses of the two pure components. These results for stability and structure are expected to be applicable to other co-deposited organic semiconductor glass mixtures, so long as the two components mix well in the glass and individually can form ultrastable glasses. Therefore, our findings are significant for designing novel electronic devices with enhanced device lifetime and increased operational efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2024

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2023

Resonance Effect in Brunel Harmonic Generation in Thin Film Organic Semiconductors

Abstract Nonlinear optical properties of organic semiconductors (OSCs) have been extensively investigated in the perturbative regime, while strong light induced high‐order processes in solid‐state OSCs are less studied. Here, below‐threshold harmonic generation is examined, both experimentally and theoretically, in two solid‐state thin film OSCs, that is, tetraphenylporphyrin and zinc tetraphenylporphyrin. Results show that the π–π* excitations of the porphyrin ring system generate the harmonic emission. The contribution of the Brunel harmonic to the 5th harmonic emission is uncovered, where the resonant 5‐photon transition ( S 0 → S 2 transition) is found to lead to an early onset of non‐perturbative behavior. A similar resonance effect is expected in Brunel harmonic generation in other organic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Shear-aligned large-area organic semiconductor crystals through extended π–π interaction

Small molecule-based organic semiconductors are of broad interest in organic field-effect transistors (OFETs) due to their potential for high crystallinity and electrical performance. The 2D molecule, TIPS-peri-pentacenopentacene (TIPS-PPP), which is the vertical extension of the 1D TIPS-pentacene (TIPS-PEN) molecule, offers a lower bandgap, higher aromaticity, and an enhanced π–π interaction with neighboring molecules in the solid state when compared to TIPS-PEN. However, an in-depth understanding of the relationship between the molecule structure, solid-state molecular packing, and the electronic properties has not been reported due to poor control over the TIPS-PPP crystallite size. In this work, we successfully engineered highly oriented large-area TIPS-PPP crystals through the solution shear coating technique. Additionally, compared with narrow ribbon-like TIPS-PEN crystals, TIPS-PPP crystals can grow centimeters long and over 500 μm wide. TIPS-PPP molecules are less susceptible to forming metastable polymorphs than TIPS-PEN molecules upon fast evaporation. The crystal structure of TIPS-PPP is also thermally stable at 250 °C. Notably, the anisotropic charge carrier mobility of TIPS-PPP crystals is resolved through fabricating bottom-gate top-contact devices, with a hole mobility of 3.1 cm 2 V -1 s -1 along the preferred packing direction. Further device optimization using top-gate bottom-contact devices improved the mobility up to 6.5 cm 2 V -1 s -1 , which is among the highest for pentacene-derivative-based organic semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy

Abstract Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energy‐resolved electrochemical impedance spectroscopy (ER‐EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as sub‐bandgap defect states in organic semiconductors. Herein, ER‐EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER‐EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER‐EIS agree with sub‐bandgap features detected by PDS. Surprisingly, ER‐EIS measurements of regiorandom and regioregular poly(3‐hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.

14 SOLAR ENERGY↗
DOE OSTI2024

Reaction mechanisms for electrical doping of organic semiconductors using complex dopants

Electrical doping of organic semiconductors (OSCs) can be achieved using simple one-electron reductants and oxidants as n- and p-dopants, respectively, but for such dopants, increased doping strength is accompanied by increased sensitivity to ambient moisture and/or oxygen. “Indirect” or “complex” dopants—defined here as those that generate OSC radical cations or anions via pathways more complex than a single simple electron transfer, i.e., by multistep reactions—represent a means of circumventing this problem. Further, this review highlights the importance of understanding the reaction mechanisms by which such dopants operate for: (i) ensuring a researcher knows the composition of a doped material; (ii) predicting the thermodynamic feasibility of achieving doping with related dopant:OSC combinations; and (iii) predicting whether thermodynamically feasible doping reactions are likely to be rapid or slow, or to require subsequent activation. The mechanistic information available to date for some of the wide variety of complex n- and p-dopants that have been reported is then reviewed, emphasizing that in many cases our knowledge is far from complete.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

A Bis(arenesulfonyl) Peroxide, an Ambient-Stable Oxidant, Is a Strong p-Dopant for Organic Semiconductors

Strong p-dopants are required to dope high-ionization energy organic semiconductors for a variety of potential applications, but strong, simple one-electron oxidants are typically sensitive to reduction by atmospheric moisture and thus challenging to store or handle. Here we show that bis(3,5-bis(trifluoromethyl)benzenesulfonyl) peroxide─a dimer formed by two highly oxidizing radicals─can function as a water-stable yet powerful oxidant, cleanly reacting with some organic semiconductors to form two radical cations and two 3,5-bis-(trifluoromethyl)benzenesulfonate anions, although in other cases sulfonylation reactions can also occur. Notably, this peroxide is capable of p-doping the high-ionization energy polymer poly[(9,9-dioctylfluorene-2,7-diyl)- alt -(benzo[2,1,3]thiadiazol-4,7-diyl)] (F8BT) to afford electrical conductivities of up to 0.03 S cm –1 , while its use with electron-rich poly(3,4-dialkoxythiophene-2,5-diyl) derivatives can afford values up to 100 S cm –1 . Quantum-chemical calculations reveal the peroxide oxidant behaves in a fashion mirroring that of relatively oxygen-stable, but highly reducing, n-dopants that have been developed based on dimers of organic radicals or organometallic sandwich compounds.

doping↗
DOE OSTI2023

Surface Equilibration Mechanism Controls the Stability of a Model Codeposited Glass Mixture of Organic Semiconductors

While previous work has identified the conditions for preparing ultrastable single-component organic glasses by physical vapor deposition (PVD), little is known about the stability of codeposited mixtures. Here, we prepared binary PVD glasses of organic semiconductors, TPD (N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine) and m-MTDATA (4,4',4"-Tris[phenyl(m-tolyl)amino]triphenylamine), with a 50:50 mass concentration over a wide range of substrate temperatures (T sub ). The enthalpy and kinetic stability are evaluated with differential scanning calorimetry and spectroscopic ellipsometry. Binary organic semiconductor glasses with exceptional thermodynamic and kinetic stability comparable to the most stable single-component organic glasses are obtained when deposited at T sub = 0.78–0.90T g (where T g is the conventional glass transition temperature). When deposited at 0.94T g , the enthalpy of the m-MTDATA/TPD glass equals that expected for the equilibrium liquid at that temperature. Thus, the surface equilibration mechanism previously advanced for single-component PVD glasses is also applicable for these codeposited glasses. Furthermore, these results provide an avenue for designing high-performance organic electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The anisotropic nature of singlet fission in single crystalline organic semiconductors

The escalating global energy predicament implores for a revolutionary resolution—one that converts sunlight into electricity—holding the key to supreme conversion efficiency. This comprehensive review embarks on the exploration of the principle of generating multiple excitons per absorbed photon, a captivating concept that possesses the potential to redefine the fundamental confines of conversion efficiency, albeit its application remains limited in photovoltaic devices. At the nucleus of this phenomenon are two principal processes: multiple exciton generation (MEG) within quantum-confined environments, and singlet fission (SF) inside molecular crystals. The process of SF, characterized by the cleavage of a single photogenerated singlet exciton into two triplet excitons, holds promise to potentially amplify photon-to-electron conversion efficiency twofold, thereby laying the groundwork to challenge the detailed balance limit of solar cell efficiency. Our discourse primarily dissects the complex nature of SF in crystalline organic semiconductors, laying special emphasis on the anisotropic behavior of SF and the diffusion of the subsequent triplet excitons in single-crystalline polyacene organic semiconductors. We initiate this journey of discovery by elucidating the principles of MEG and SF, tracing their historical genesis, and scrutinizing the anisotropy of SF and the impact of quantum decoherence within the purview of functional mode electron transfer theory. We present an overview of prominent techniques deployed in investigating anisotropic SF in organic semiconductors, including femtosecond transient absorption microscopy and imaging as well as stimulated Raman scattering microscopies, and highlight recent breakthroughs linked with the anisotropic dimensions of Davydov splitting, Herzberg–Teller effects, SF, and triplet transport operations in single-crystalline polyacenes. Through this comprehensive analysis, our objective is to interweave the fundamental principles of anisotropic SF and triplet transport with the current frontiers of scientific discovery, providing inspiration and facilitating future ventures to harness the anisotropic attributes of organic semiconductor crystals in the design of pioneering photovoltaic and photonic devices.

Chemistry↗
DOE OSTI2022

Vapor deposition rate modifies anisotropic glassy structure of an anthracene-based organic semiconductor

We control the anisotropic molecular packing of vapor-deposited glasses of ABH113, a deuterated anthracene derivative with promise for future organic light emitting diode materials, by changing the deposition rate and substrate temperature at which they are prepared. We find that at substrate temperatures from 0.65 T g to 0.92 T g , the deposition rate significantly modifies the orientational order in the vapor-deposited glasses as characterized by x-ray scattering and birefringence. Both measures of anisotropic order can be described by a single deposition rate–substrate temperature superposition (RTS). This supports the applicability of the surface equilibration mechanism and generalizes the RTS principle from previous model systems with liquid crystalline order to non-mesogenic organic semiconductors. We find that vapordeposited glasses of ABH113 have significantly enhanced density and thermal stability compared to their counterparts prepared by liquidcooling. For organic semiconductors, the results of this study provide an efficient guide for using the deposition rate to prepare stable glasses with controlled molecular packing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Critical analysis of self-doping and water-soluble n-type organic semiconductors: structures and mechanisms

Self-doping organic semiconductors provide a promising route to avoid instabilities and morphological issues associated with molecular n-type dopants. Structural characterization of a naphthalenetetracarboxylic diimide (NDI) semiconductor covalently bound to an ammonium hydroxide group is presented. The dopant precursor was found to be the product of an unexpected base catalyzed hydrolysis, which was reversible. The reversible hydrolysis had profound consequences on the chemical composition, morphology, and electronic performance of the doped films. In addition, we investigated the degradation mechanism of the quaternary ammonium group and the subsequent doping of NDI. These findings reveal that the products of more than one chemical reaction during processing of films must be considered when utilizing this promising class of water-soluble semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗