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Optoelectronic device with a support member
Optoelectronic devices with a support member and methods of manufacturing or assembling the same are provided. An example of an optoelectronic device according to the present disclosure includes a substrate and an optical component and an electronic component disposed thereon or therein. The optoelectronic device further includes a ferrule coupled to the optical fiber and an optical socket receiving the ferrule therein. The optoelectronic device includes a support member disposed between the substrate and the optical socket such that the optical socket is spaced from the substrate by the support member.
Perdeuteration of poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEH-PPV): control of microscopic charge-carrier spin–spin coupling and of magnetic-field effects in optoelectronic devices
Replacing all protons on a polymer by deuterium has a dramatic impact on spin-dependent properties of the material in devices.
High-efficiency and durable optoelectronic devices using layered 2D perovskites
A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.
Optoelectronic devices based on thin single-crystalline semiconductor films and non-epitaxial optical cavities
Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
Synthesis, Photophysical, Electrochemical and Thermal Investigation of Anthracene Doped 2-Naphthol Luminophors and their Thin Films for Optoelectronic Devices
A series of novel luminophors of 2-naphthol by doping anthracene were prepared using conventional solid state reaction technique. The photophysical, electrochemical and thermal properties were studied by Fluorescence spectroscopy, XRD, SEM, TGA-DSC and by Cyclic Voltammetry techniques. The thin films were characterized by Fluorescence spectroscopy. XRD study of fine grained powders exhibited sharp peaks which specify crystallinity and homogeneity of the doped luminophors. The fluorescence spectra of doped 2-naphthol exhibited emission of anthracene at 413 nm i.e. blue emission with instantaneous fluorescence quenching of 2-NP due to excitation energy transfer (EET). Electrochemical data specify that the HOMO and LUMO energy levels of the synthesized luminophors are in the range of 5.55–5.71 eV and 3.03–3.24 eV, respectively. TGA-DSC study confirmed thermal stability of prepared luminophors. Hence, overall study proposes that these luminophors seems applicable to be used as n-type materials for Optoelectronic devices.
Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
γ-InSe is a semiconductor that holds promising potential in high-performance field-effect transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has proven challenging because of the difficulty in precise control of stoichiometry and the coexistence of different indium selenide phases. In this study, we demonstrate the wafer-scale combinatorial approach to map out the growth window as functions of the Se/In ratio and growth temperature for γ-InSe on the Si(111) 7 × 7 substrate in molecular beam epitaxy. X-ray diffraction (XRD) was used to identify the indium selenide phases, while atomic force microscopy revealed four distinct surface morphologies of γ-InSe, enabling a discussion of the growth mechanisms associated with each morphology. Cross-sectional atomic resolution scanning transmission electron microscopy confirmed that the film was of high crystalline quality and had nearly single-phase γ-InSe. In conclusion, our comprehensive study elucidates the In–Se phase map for thin film growth parameters, providing invaluable landmarks for the reproducible synthesis of high-quality γ-InSe layers.
Topological Materials for Functional Optoelectronic Devices
The recent realization of topology as a mathematical concept in condensed matter systems has shattered Landau's widely accepted classification of phases by spontaneous symmetry breaking as he famously said, “a particular symmetry property exists or does not exist.” Topological materials (TMs) such as topological insulators and topological semimetals, are characterized by properties that depend on the topology of the band structure. Such dependence has drastic implications on the optical, electrical, and thermal properties of the material. Fundamental physics of TMs is currently under active research in condensed matter, materials science, and high energy physics. Here, recent advances in exploiting the unique properties of TMs to realize functional optoelectronic devices are surveyed. Current and future applications that are, or may be, enabled by their unique properties are discussed. Although many theoretical ideas have been proposed over the past decade or so on using TMs in optoelectronic applications, the focus will be on experimentally realized devices.
Spin-optoelectronic devices based on hybrid organic-inorganic trihalide perovskites
Recently the hybrid organic-inorganic trihalide perovskites have shown remarkable performance as active layers in photovoltaic and other optoelectronic devices. However, their spin characteristic properties have not been fully studied, although due to the relatively large spin-orbit coupling these materials may show great promise for spintronic applications. Here we demonstrate spin-polarized carrier injection into methylammonium lead bromide films from metallic ferromagnetic electrodes in two spintronic-based devices: a ‘spin light emitting diode’ that results in circularly polarized electroluminescence emission; and a ‘vertical spin valve’ that shows giant magnetoresistance. In addition, we also apply a magnetic field perpendicular to the injected spins orientation for measuring the ‘Hanle effect’, from which we obtain a relatively long spin lifetime for the electrically injected carriers. Our measurements initiate the field of hybrid perovskites spin-related optoelectronic applications.
Ultrafast vibrational control of organohalide perovskite optoelectronic devices using vibrationally promoted electronic resonance
Vibrational control (VC) of photochemistry through the optical stimulation of structural dynamics is a nascent concept only recently demonstrated for model molecules in solution. Extending VC to state-of-the-art materials may lead to new applications and improved performance for optoelectronic devices. Metal halide perovskites are promising targets for VC due to their mechanical softness and the rich array of vibrational motions of both their inorganic and organic sublattices. Here, we demonstrate the ultrafast VC of FAPbBr 3 perovskite solar cells via intramolecular vibrations of the formamidinium cation using spectroscopic techniques based on vibrationally promoted electronic resonance. The observed short (~300 fs) time window of VC highlights the fast dynamics of coupling between the cation and inorganic sublattice. First-principles modelling reveals that this coupling is mediated by hydrogen bonds that modulate both lead halide lattice and electronic states. Cation dynamics modulating this coupling may suppress non-radiative recombination in perovskites, leading to photovoltaics with reduced voltage losses.
Highly Stable Transparent Conductive Electrodes Based on Silver–Platinum Alloy-walled Hollow Nanowires for Optoelectronic Devices
In industrial manufacturing, alloying can contribute to the passivation of active metals and markedly improve their corrosion resistance. This inspires us to solve the current critical problem of Ag nanowires (Ag NWs) that have poor stability against chemical and electrochemical corrosion. These problems have seriously limited the applications of Ag NWs in optoelectronic devices where they are used for transparent conductive electrodes. Here, a kind of transparent conductive electrode based on Ag@Pt alloy-walled hollow nanowires (Ag@Pt AHNWs) is successfully fabricated by introducing 12 mol% Pt into long Ag NWs to form Ag@Pt alloy. The as-synthesized electrodes exhibit better optical transmittance (82% at the wavelengthof 550 nm) under high electrical conductivity (28.73 O/sq), high thermal stability up to 400 oC for 11 h, remarkable mechanical flexibility (remaining stable after 5000 cycles bending), as well as high resistance against chemical and electrochemical corrosion. The Ag@Pt AHNWs electrodes are further applied in primary bifunctional polyaniline electrochemical device, and the device shows promising flexibility, noticeable multicolor performances and the high specific capacitance due to the remarkable mechanical flexibility and electrochemical stability of Ag@Pt AHNWs. This work will provide an optional approach for the preparation of other metal nanomaterials electrode with high stability.
Fabrication methods for high reflectance dielectric-metal point contact rear mirror for optoelectronic devices
The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the article: PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer; methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask; methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching.
Significantly Enhanced Emission Stability of CsPbBr 3 Nanocrystals via Chemically Induced Fusion Growth for Optoelectronic Devices
Lead–halide perovskite nanocrystals (PNCs) have attracted much attention in recent years due to their outstanding optical properties. We report here a new chemical route for triggering postsynthetic growth of CsPbBr 3 PNCs at room temperature via intentional depletion of stabilizing ligands, resulting in an immediate fusion growth of the as-synthesized PNCs. Upon fusion, the CsPbBr 3 PNCs can grow from ca. 8 nm to ca. 60 nm in lateral dimensions in 48 h, reaching about 14 nm in thickness. More importantly, it was found that the fused PNCs have significantly enhanced optical properties. They showed an exceptionally higher stability to photodegradation. They also displayed sharper emission lines and a higher quantum yield, contrary to the fact that the nanocrystals are much larger. The much-improved optical properties are attributed to the Ruddlesden–Popper (RP) planar faults formed during the fusion process and observed using atomic resolution scanning transmission electron microscopy, which are predicted to result in quantum confinement based on density-functional theory calculations. The newly grown nanocrystals with RP defects are expected to significantly improve light emission properties of the PNCs and find applications in light-emitting diodes and other optoelectronic devices.
High temperature optoelectronic devices for power electronics
A high temperature optoelectronic isolator for power electronics operating above 250 degrees Celcius.
A Prony-based curve-fitting method for characterization of RF pulses from optoelectronic devices
Not Available
Reduced Graphene Oxide–Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application
Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide–cadmium zinc sulfide (RGO–Cd{sub 0.5}Zn{sub 0.5}S) composite. The reduction in graphene oxide (GO), synthesis of Cd{sub 0.5}Zn{sub 0.5}S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV–Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO–CdZnS. An excellent photocurrent generation in RGO–CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.
Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth
The epitaxial development and characterization of metamorphic “GaSb-on-silicon” buffers as substrates for antimonide devices is presented. The approach involves the growth of a spontaneously and fully relaxed GaSb metamorphic buffer in a primary epitaxial reactor, and use of the resulting “GaSb-on-silicon” wafer to grow subsequent layers in a secondary epitaxial reactor. The buffer growth involves four steps—silicon substrate preparation for oxide removal, nucleation of AlSb on silicon, growth of the GaSb buffer, and finally capping of the buffer to prevent oxidation. This approach on miscut silicon substrates leads to a buffer with negligible antiphase domain density. The growth of this buffer is based on inducing interfacial misfit dislocations between an AlSb nucleation layer and the underlying silicon substrate, which results in a fully relaxed GaSb buffer. A 1 μm thick GaSb layer buffer grown on silicon has ~9.2 × 10 7 dislocations/cm 2 . The complete lack of strain in the epitaxial structure allows subsequent growths to be accurately lattice matched, thus making the approach ideal for use as a substrate. Here we characterize the GaSb-on-silicon wafer using high-resolution x-ray diffraction and transmission electron microscopy. The concept’s feasibility is demonstrated by growing interband cascade light emitting devices on the GaSb-on-silicon wafer. The performance of the resulting LEDs on silicon approaches that of counterparts grown lattice matched on GaSb.
Study on mechanically alloyed tin telluride screen-printed films for optoelectronic device applications
Narrow band gap semiconductor tin telluride (SnTe) was synthesized by mechanical alloying and its film was deposited on glass substrates by the economically and commercially feasible screen-printing technique. Deposition of the film was followed by sintering. Different analytical techniques were utilized to study the structure, surface morphology, elemental, optical and electrical characteristics of the film. X-ray diffraction analysis confirms that the film is polycrystalline in nature and exhibits rock salt type structure with preferred orientation of grains along (200) direction. EDAX spectrum confirms the presence of Sn and Te elements in the film. SEM image shows that the film exhibits uniform surface. The energy band gap of the film was determined by reflection spectra. The film is found to have a direct band gap of 0.37 eV. The dark electrical conductivity and activation energy of the film were measured in temperature range 300–380 K. Hall Effect measurement indicates that the film has p-type electrical conductivity.