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At least 19 records

Neutron effects on the electrical and switching characteristics of NPN bipolar power transistors

The use of nuclear reactors to generate electrical power for future space missions will require the electrical components used in the power conditioning, control, and transmission subsystem to operate in the associated radiation environments. An initial assessment of neutron irradiation on the electrical and switching characteristics of commercial high power NPN bipolar transistors was investigated. The results clearly show the detrimental effects caused by neutron irradiation on the electrical and switching characteristics of the NPN bipolar power transistor.

Frasca, Albert J.↗

Materials Data on NpN by Materials Project

NpN is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Np3+ is bonded to six equivalent N3- atoms to form a mixture of edge and corner-sharing NpN6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Np–N bond lengths are 2.43 Å. N3- is bonded to six equivalent Np3+ atoms to form a mixture of edge and corner-sharing NNp6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗

Materials Data on NpN by Materials Project

NpN is Tetraauricupride structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Np3+ is bonded in a body-centered cubic geometry to eight equivalent N3- atoms. All Np–N bond lengths are 2.59 Å. N3- is bonded in a body-centered cubic geometry to eight equivalent Np3+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on NpN by Materials Project

NpN is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Np3+ is bonded to four equivalent N3- atoms to form corner-sharing NpN4 tetrahedra. All Np–N bond lengths are 2.27 Å. N3- is bonded to four equivalent Np3+ atoms to form corner-sharing NNp4 tetrahedra.

36 MATERIALS SCIENCE↗

Total Ionizing Dose Test Report BFR92A NPN 5 GHz Wide Band Transistor from NXP

The purpose of this test was to characterize the Philips/NXP BFR92A NPN 5 gigahertz wide band silicon transistor for total dose response. This test shall serves as the radiation lot acceptance test (RLAT) for the lot date code (LDC) 1027. The BFR92A is packaged in a 3-pin plastic SOT23 package. Low dose rate (LDR/ELDRS) irradiations was performed.

Total Ionizing Dose (TID)↗

Total Ionizing Dose Test Report Microchip JANTXV2N6284 NPN Darlington Power Si Transistor

This study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).

Kaitlyn L Ryder↗

Inference for Nonparanormal Partial Correlation via Regularized Rank-Based Nodewise Regression

Abstract Partial correlation is a common tool in studying conditional dependence for Gaussian distributed data. However, partial correlation being zero may not be equivalent to conditional independence under non-Gaussian distributions. In this paper, we propose a statistical inference procedure for partial correlations under the high-dimensional nonparanormal (NPN) model where the observed data are normally distributed after certain monotone transformations. The NPN partial correlation is the partial correlation of the normal transformed data under the NPN model, which is a more general measure of conditional dependence. We estimate the NPN partial correlations by regularized nodewise regression based on the empirical ranks of the original data. A multiple testing procedure is proposed to identify the nonzero NPN partial correlations. The proposed method can be carried out by a simple coordinate descent algorithm for lasso optimization. It is easy-to-implement and computationally more efficient compared to the existing methods for estimating NPN graphical models. Theoretical results are developed to show the asymptotic normality of the proposed estimator and to justify the proposed multiple testing procedure. Numerical simulations and a case study on brain imaging data demonstrate the utility of the proposed procedure and evaluate its performance compared to the existing methods. Data used in preparation of this article were obtained from the Alzheimer's Disease Neuroimaging Initiative (ADNI) database.

97 MATHEMATICS AND COMPUTING↗

Neptunium mononitride as a target material for Pu-238 production

Deep space exploration requires specialized sources for both thermal and power applications. Radioactive decay heat of plutonium-238 (238Pu) provides these sources in the form of radioisotope thermoelectric generators (RTGs). The 238 Pu is produced via neutron capture reaction involving neptunium-237 ( 237 Np) target material. Continual optimization of 237 Np target materials and evaluation of potential alternative targets for production of 238 Pu RTGs are advantageous for meeting ongoing space power system resource requirements. Current production of 238 Pu for RTGs for the United States space program utilizes neptunium dioxide ( 237 NpO 2 ) targets; however, the use of neptunium mononitride ( 237 NpN) presents an opportunity to increase the mass of 237 Np per target compared to the dioxide form, as well as increase the thermal conductivity of the target. To assess the viability of a 237 NpN target material, the material chemistry must be thoroughly evaluated, including synthesis methods and dissolution and reprocessing schemes. This review presents a summary of synthesis pathways for 237 NpN based on published literature on actinide mononitrides. Specific literature on 237 NpN is limited, necessitating evaluation of other actinide systems to gather parallels. This suggests a need for additional experimental studies on 237 NpN. A particular limitation in the existing literature is a lack of information on the differences in material characteristics, such as morphology, particle size, and trace chemical impurities, as a function of synthesis method. These parameters may affect subsequent reactor performance or dissolution of irradiated targets. The evaluation of existing literature is presented with a focus on the efficacy of 237 NpN targets for 238 Pu production.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Deployment of the HFIRCON transport and depletion tool for plutonium-238 production studies

Irradiation of {sup 237}Np-bearing targets in Oak Ridge National Laboratory's (ORNL) High Flux Isotope Reactor (HFIR) results in the efficient production of {sup 238}Pu, which, in the form of heat source PuO{sub 2}, is used as a reliable power source for deep-space and planetary NASA missions. A technology demonstration subproject was initiated at ORNL in 2011 to develop and implement the technology required to establish a {sup 238}Pu supply chain. A systematic progression of NpO{sub 2}/Al cermet (20 vol.% NpO{sub 2}) activities to date has successfully demonstrated target fabrication, irradiation, and chemical recovery processes. Recent program tasks have included the development of the HFIRCON transport and depletion tool for efficient reactor physics analyses and the evaluation of increased NpO{sub 2} loadings (i.e., beyond 20 vol.%) and NpN-based targets. This paper documents the deployment of the HFIRCON code to assess various Np concentrations in NpO{sub 2}- and NpN-based targets in HFIR's inner small vertical experiment facilities. Results indicate that {sup 238}Pu production and quality can be enhanced with increased Np loadings; however, target conversion rates are reduced. The results recorded in this paper, thermal and material balance evaluations, and testing requirement planning will be used to determine whether increased NpO{sub 2} loadings or NpN-based targets will be further considered. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Estimating Planetary Boundary Layer Heights from NOAA Profiler Network Wind Profiler Data

An algorithm was developed to estimate planetary boundary layer (PBL) heights from hourly archived wind profiler data from the NOAA Profiler Network (NPN) sites located throughout the central United States. Unlike previous studies, the present algorithm has been applied to a long record of publicly available wind profiler signal backscatter data. Under clear conditions, summertime averaged hourly time series of PBL heights compare well with Richardson-number based estimates at the few NPN stations with hourly temperature measurements. Comparisons with clear sky reanalysis based estimates show that the wind profiler PBL heights are lower by approximately 250-500 m. The geographical distribution of daily maximum PBL heights corresponds well with the expected distribution based on patterns of surface temperature and soil moisture. Wind profiler PBL heights were also estimated under mostly cloudy conditions, and are generally higher than both the Richardson number based and reanalysis PBL heights, resulting in a smaller clear-cloudy condition difference. The algorithm presented here was shown to provide a reliable summertime climatology of daytime hourly PBL heights throughout the central United States.

Wind Profiler↗

Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors

Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.

42 ENGINEERING↗

Silicon device performance measurements to support temperature range enhancement

The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.

Johnson, R. Wayne↗

Effect of CO2 levels on nutrient content of lettuce and radish

Atmospheric carbon-dioxide enrichment is known to affect the yield of lettuce and radish grown in controlled environments, but little is known about CO2 enrichment effects on the chemical composition of lettuce and radish. These crops are useful model systems for a Controlled Ecological Life-Support System (CELSS), largely because of their relatively short production cycles. Lettuce (Lactuca sativa L.) cultivar 'Waldmann's Green' and radish (Raphanus sativus L.) cultivar 'Giant White Globe' were grown both in the field and in controlled environments, where hydroponic nutrient solution, light, and temperature were regulated, and where CO2 levels were controlled at 400, 1000, 5000, or 10,000 ppm. Plants were harvested at maturity, dried, and analyzed for proximate composition (protein, fat, ash, and carbohydrate), total nitrogen (N), nitrate N, free sugars, starch, total dietary fiber, and minerals. Total N, protein N, nonprotein N (NPN), and nitrate N generally increased for radish roots and lettuce leaves when grown under growth chamber conditions compared to field conditions. The nitrate-N level of lettuce leaves, as a percentage of total NPN, decreased with increasing levels of CO2 enrichment. The ash content of radish roots and of radish and lettuce leaves decreased with increasing levels of CO2 enrichment. The levels of certain minerals differed between field- and chamber-grown materials, including changes in the calcium (Ca) and phosphorus (P) contents of radish and lettuce leaves, resulting in reduced Ca/P ratio for chamber-grown materials. The free-sugar contents were similar between the field and chamber-grown lettuce leaves, but total dietary fiber content was much higher in the field-grown plant material. The starch content of growth-chamber lettuce increased with CO2 level.

NASA Discipline Life Support Systems↗

III-V Compound Detectors for CO2 DIAL Measurements

Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

Refaat, Tamer F.↗

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

linear integrated circuits↗