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Niobium film superconductor carries high currents in strong magnetic fields. The thin niobium film is formed on an inert substrate through evaporation in a vacuum environment. Control of temperature and vacuum results in rejection of gaseous impurities so that the film is of a very high purity.
Niobium nitride thin films very high critical current and field characteristics, noting deposition by sputtering
Niobium carbonitride thin film deposition temperature effects on superconducting properties, considering transition temperature and critical currents and fields
Superconducting niobium thin film production
NbN thin film production by refined reactive sputtering technique, discussing Pauli spin paramagnetism and spin orbit scattering in high field superconductivity
Superconducting properties of Nb-Ti-N thin films prepared by reactive sputtering process, obtaining transition temperature maximums
Sensor consisting of superconductive film mounted on a dipstick measures the level of liquid helium in a Dewar flask. The sensor is made by depositing a thin film of niobium metal to a thickness of 2000 angstroms on a quartz substrate, which is then mounted on a graduated dipstick.
Niobium thin-film bridges 300-A thick, 1-micron wide, and 0.5-micron long joining two bulk films 5000-A thick and having normal resistance of the order of 1 ohm have been fabricated and used for microwave mixing at 10 GHz. They exhibit Josephson, bolometric, and multiple-flux-flow mixing and have useful response at 100-200 GHz. The data show in a direct way limitations imposed by flux flow and heating.
A process of fabricating superconducting Nb3Ge tapes by chemical vapor deposition (CVD) has been developed and tapes up to 10 meters long fabricated. The typical properties achieved were: critical temperature T sub c = 20 K, upper critical field H sub c2 = 29 tesla at 4.2 K, and J sub c = 3 to 4 x 10 to the 8th power A m(-2) at 4.2 K, 18 tesla. The relative depression of T sub c and H sub c2 compared with the best thin film samples sputtered on sapphire was due to the presence of Nb5Ge3 second-phase particles used as flux pinning centers and to strains induced by thermal mixmatch with Hastelloy B tape substrates. A peculiar field dependence of flux pinning force that was observed in both CVD and sputtered Nb3Ge indicated a premature pin-breaking mechanism or a phase inhomogeneity. Directions of further optimization work were defined.