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Processing of fused silicide coatings for carbon-based materials

The processing and oxidation resistance of fused Al-Si and Ni-Si slurry coatings on ATJ graphite was studied. Ni-Si coatings in the 70 to 90 percent Si range were successfully processed to melt, wet, and bond to the graphite. The molten coatings also infiltrated the porosity in graphite and reacted with it to form SiC in the coating. Cyclic oxidation at 1200 C showed that these coatings were not totally protective because of local attack of the substrate, due to the extreme thinness of the coatings in combination with coating cracks.

Smialek, J. L.↗

Processing of fused silicide coatings for carbon-based materials

The processing and oxidation resistance of fused Al-Si and Ni-Si slurry coatings on ATJ graphite was studied. Ni-Si coatings in the 70 to 90 percent Si range were successfully processed to melt, wet, and bond to the graphite. The molten coatings also infiltrated the porosity in graphite and reacted with it to form SiC in the coating. Cyclic oxidation at 1200 C showed that these coatings were not totally protective because of local attack of the substrate, due to the extreme thinness of the coatings in combination with coating cracks. Previously announced in STAR as N83-27019

Smialek, J. L.↗

The chemical composition of the cores of the terrestrial planets and the moon

Using models of the quasi-chemical theory of solutions, the activity coefficients of silicon are calculated in the melts Fe-Si, Ni-Si, and Fe-Ni-Si. The calculated free energies of solution of liquid nickel and silicon in liquid iron in the interval 0 to 1400 kbar and 1500 to 4000 K, shows that Fe-Ni-Si alloy is stable under the conditions of the outer core of the earth and the cores of the terrestrial planets. The oxidation-reduction conditions are studied, and the fugacity of oxygen in the mantles of the planets and at the core-mantle boundary are calculated. The mechanism of reduction of silicon is analyzed over a broad interval of p and T. The interaction between the matter of the core and mantle is studied, resulting in the extraction of silicon from the mantle and its solution in the material of the core. It is concluded that silicon can enter into the composition of the outer core of the earth and Venus, but probably does not enter into the composition of the cores of Mercury, Mars, and the moon, if in fact the latter possesses one.

Kuskov, O. L.↗

Metal-semiconductor interfacial reactions - Ni/Si system

X-ray photoelectron spectroscopy and channeling measurements with MeV He-4(+) ions have been used to probe the structure of the interface in the Ni/Si system. It is found that reactions occur where Ni is deposited on Si at 10 to the -10th torr: Si atoms are displaced from lattice sites, the Ni atoms are in an Si-rich environment, and the Ni/Si interface is graded in composition. Composition gradients are present at both interfaces in the Si/Ni2/Si/Ni system. For the Ni-Si system, cooling the substrate to 100 K slows down the reaction rate. The temperature dependence of the interfacial reactivity indicates the kinetic nature of metal-semiconductor interfaces.

Cheung, N. W.↗

Oxidation resistant slurry coating for carbon-based materials

An oxidation resistant coating is produced on carbon-base materials, and the same processing step effects an infiltration of the substrate with silicon containing material. The process comprises making a slurry of nickel and silicon powders in a nitrocellulose lacquer, spraying onto the graphite or carbon-carbon substrate, and sintering in vacuum to form a fused coating that wets and covers the surface as well as penetrates into the pores of the substrate. Optimum wetting and infiltration occurs in the range of Ni-60 w/o Si to Ni-90 w/o Si with deposited thicknesses of 25-100 mg/sq. cm. Sintering temperatures of about 1200 C to about 1400 C are used, depending on the melting point of the specific coating composition. The sintered coating results in Ni-Si intermetallic phases and SiC, both of which are highly oxidation resistant.

Smialek, J. L.↗