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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Effect of neutron irradiation on the thermoelectric properties of SiGe alloys

Zone-leveled and hot-pressed n- and p-type Si80Ge20 alloys were irradiated with neutrons to a fluence of 4 x 1018 n/sq cm and to a fluence of 5.4 x 1019 n/sq cm at a temperature of approximately 200-300 C. The effect of neutron irradiation on the thermoelectric properties of these alloys was evaluated. The carrier concentration and mobility (and hence the resistivity) were measured at room temperature while the thermal diffusivity was measured at 177-192 C both before and after the irradiation and after each subsequent 2-h heat treatment at 350 C, 600, and 1000 C. The irradiation increased the resistivity significantly, but the thermal conductivity decreased only by about 10-15 percent. This tends to indicate that the radiation produced only small defects (single pairs and small vacancy chains). The samples all returned to almost exactly their preirradiation state after the 1000 C anneal. This indicates that SiGe alloys can be operated in this neutron fluence at high temperatures without a degradation of thermoelectric properties.

Vandersande, Jan W.↗
NASA NTRS1990

The effect of neutron irradiation on the properties of AlGaAs/GaAs laser diodes

The effects of neutron irradiation on several properties of both single and multiple stripe laser diodes have been examined. Prior to fast neutron irradiation, total light output as a function of laser current, threshold current, near-field pattern, far-field pattern, and laser output wavelength spectra were measured at room temperature. These measurements were then repeated at intermittent neutron fluence levels. It was observed that the threshold current increased with neutron fluence for all devices examined. In contrast, neutron irradiation had only an indirect effect on the remainder of the laser diode properties in that the higher currents required for operation after irradiation caused variations in these properties.

Barnes, C. E.↗
NASA NTRS1985

ac susceptibility of thermally annealed and neutron irradiated Cu-Ni alloys

Thermal annealing and high-flux neutron irradiation are used to vary the degree of short-range atomic order in Cu-Ni alloys of composition 40, 50, and 60 at. pct Ni. The magnetic state is measured by ac magnetic susceptibility measurements. It is shown that annealing at 350 C causes significant changes in the susceptibility of all the samples. In the 50 and 60 at. pct Ni samples, the transition is broadened and extended to higher temperatures, while the 40 at. pct Ni sample changes from a paramagnetic system to a weakly ferromagnetic system. The neutron irradiation, in contrast to the thermal treatment, causes the development of smaller size cluster formations. The irradiated 60 at. pct Ni sample exhibits no change in the shape of its susceptibility curve from that of the quenched sample, whereas, the 40 pct alloy is changed, by irradiation, from a paramagnetic system to a spin-glass system.

Catchings, R. M., III↗
NASA NTRS1976

Effects of neutron irradiation on the characteristics of a buried channel CCD at 80 degrees Kelvin and 295 degrees Kelvin

Buried channel CCD shift registers were irradiated with 15 MeV neutrons. The irradiations were performed at 80 K and 295 K on operating devices with normal clocks and bias voltages applied. Dark current increased from the pre-irradiation value of 7 nA/sq cm to 1,600 nA/sq cm at 1 x 10 to the 13th power n/sq cm. The input gate threshold shift observed at 80K was minus 0.9 volts per 10 to the 13th power n/sq cm, a factor of 4 less than that predicted from a first order calculation of the equivalent ionization dose of neutrons in the oxide. Transfer efficiency measurements yielded a bulk electron trap creation rate for neutron irradiation of 14.0 cm to the minus 1 power at 295 K with a trap emission time constant of 25 microseconds.

Saks, N. S.↗
NASA NTRS1972

The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

Ghosh, S.↗
NASA NTRS1968

Resistivity measurements of neutron-irradiated pure metals and Al-Zn alloys

Report presents resistivity measurements and their interpretation for neutron-irradiated pure metals and Al-Zn alloys. The influence of temperature, the role of point defects, and the aging behavior on resistivity are considered. The experimental procedures and results are discussed in detail.

Horak, J. A.↗
NASA NTRS1972

Rare-gas analyses on neutron irradiated Apollo 12 samples.

Argon, krypton, and xenon from stepwise heating of five Apollo 12 rocks that had been irradiated to a neutron fluence of about 10 to the 19th neutrons/sq cm were analyzed mass-spectrometrically. The Ar40-Ar39 ages were determined and range from 3.18 plus or minus 0.06 x 10 to the 9th years to 3.32 plus or minus 0.06 x 10 to the 9th years. Trace elements Ba, Br, I, and U were measured via the neutron-induced reactions that produce isotopes of krypton and xenon. The following concentration ranges were observed: Ba, 46 to 70 ppm; Br, 48 to 146 ppb; I, 16 to 73 ppb; and U, 170 to 247 ppb.

Alexander, E. C., Jr.↗
NASA NTRS1972

Observation of defect annealing in neutron-irradiated silicon by space-charge-limited current.

Use of space-charge-limited current (SCLC) to observe defect annealing in neutron-irradiated silicon. From the observation of the trap-filled-limit voltage a deep-trap concentration in the irradiated unannealed crystals is found to be at least 1.4 x 10 to the 12th power per cu cm. Shallow traps are also observed. This deep-trap concentration decreases with anneal temperature up to 200 C, above which SCLC can no longer be observed. There is evidence that at least some of this decrease is due to the conversion of the deep traps to shallow traps.

Magee, T. J.↗
NASA NTRS1991

Segmented Ge detector rejection of internal beta activity produced by neutron irradiation

Future Ge spectrometers flown in space to observe cosmic gamma-ray sources will incorporate segmented detectors to reduce the background from radioactivity produced by energetic particle reactions. To demonstrate the effectiveness of a segmented Ge detector in rejecting background events due to the beta decay of internal radioactivity, a laboratory experiment has been carried out in which radioactivity was produced in the detector by neutron irradiation. A Cf-252 source of neutrons was used to produce, by neutron capture on Ge-74 (36.5 percent of natural Ge) in the detector itself, Ge-75 (t sub 1/2 = 82.78 min), which decays by beta emission with a maximum electron kinetic energy of 1188 keV. By requiring that an ionizing event deposit energy in two or more of the five segments of the detector, each about 1-cm thick, the beta particles, which have a range of about 1-mm, are rejected, while most external gamma rays incident on the detector are counted. Analysis of this experiment indicates that over 85 percent of the beta events from the decay of Ge-75 are rejected, which is in good agreement with Monte Carlo calculations.

Varnell, L. S.↗
NASA NTRS1995

Effect of neutron irradiation on the London penetration depth for polycrystalline Bi(1.8)Pb(0.3)Sr2Ca2Cu3O10 superconductor

Magnetization studies of polycrystalline Bi(1.8)Pb(0.3)Sr2Ca2Cu3O10 superconductor, prior to and after neutron irradiation, showed an increase in J(sub c) due to irradiation damage. Analysis of the equilibrium magnetization revealed significant increases in other more fundamental properties. In particular, the London penetration depth increased by approximately 15 percent following irradiation with 8 x 10(exp 16) neutrons/sq cm. Corresponding changes were observed in the upper critical magnetic field H(sub c2). However, the most fundamental thermodynamic property, the superconductive condensation energy F(sub c), was unaffected by the moderate level of neutron-induced damage.

Ossandon, J. G.↗
NASA NTRS1971

The observation of structural defects in neutron-irradiated lithium-doped silicon solar cells

Electron microscopy has been used to observe the distribution and morphology of lattice defects introduced into lithium-doped silicon solar cells by neutron irradiation. Upon etching the surface of the solar cells after irradiation, crater-like defects are observed that are thought to be associated with the space charge region around vacancy clusters. Thermal annealing experiments showed that the crater defects were stable in the temperature range 300 to 1200 K in all of the lithium-doped samples. Some annealing of the crater defects was observed to occur in the undoped cells which were irradiated at the lowest doses.

Sargent, G. A.↗