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10 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Ten Ghz YBa2Cu3O(7-Delta) Superconducting Ring Resonators on NdGaO3 Substrates

YBa2Cu3O(7-delta) thin films were formed on NdGaO3 substrates by laser ablation. Critical temperatures greater than 89 K and critical current densities exceeding 2 x 10(exp 8) Acm(sub -2) at 77 K were obtained. The microwave performance of films patterned into microstrip ring resonators with gold ground planes was measured. An unloaded quality factor six times larger than that of a gold resonator of identical geometry was achieved. The unloaded quality factor decreased below 70 K for both the superconducting and gold resonators due to increasing dielectric losses in the substrate. The temperature dependence of the loss tangent of NdGaO3 was extracted from the measurements.

To, H. Y.↗
NASA NTRS1992

10 GHz YBa2Cu3O7-delta Superconducting Ring Resonators on NdGaO3 Substrates

YBa2Cu3O7-delta thin films were formed on NdGaO3 substrates by laser ablation. Critical temperatures greater than 89 K and critical current densities exceeding 2 x 10(exp.6) A cm(exp.-2) at 77 K were obtained. The microwave performance of films patterned into microstrip ring resonators with gold ground planes was measured. An unloaded quality factor six times larger than a that of a gold resonator of identical geometry was achieved. The unloaded quality factor decreased below 70 K for both the superconducting and gold resonators due to increasing dielectric losses in the substrate. The temperature dependence of the loss tangent of NdGaO3 was extracted from the measurements.

To, H. Y.↗
DOE OSTI2020

Materials Data on NdGaO3 by Materials Project

NdGaO3 is Orthorhombic Perovskite structured and crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. Nd3+ is bonded in a 8-coordinate geometry to eight O2- atoms. There are a spread of Nd–O bond distances ranging from 2.37–2.75 Å. Ga3+ is bonded to six O2- atoms to form corner-sharing GaO6 octahedra. The corner-sharing octahedral tilt angles are 28°. There are four shorter (2.01 Å) and two longer (2.03 Å) Ga–O bond lengths. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a 5-coordinate geometry to three equivalent Nd3+ and two equivalent Ga3+ atoms. In the second O2- site, O2- is bonded to two equivalent Nd3+ and two equivalent Ga3+ atoms to form distorted corner-sharing ONd2Ga2 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on NdGaO3 by Materials Project

NdGaO3 is (Cubic) Perovskite structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional and consists of one gallium molecule and one NdO3 framework. In the NdO3 framework, Nd3+ is bonded to six equivalent O2- atoms to form corner-sharing NdO6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Nd–O bond lengths are 2.28 Å. O2- is bonded in a linear geometry to two equivalent Nd3+ atoms.

36 MATERIALS SCIENCE↗
NASA NTRS1995

Growth and analysis of highly oriented (11n) BCSCO films for device research

Films of BCSCO superconductor of the type Bi2CaSr2Cu2Ox have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (is greater than 860 C) also encourage to the formation of this phase. X-Ray Diffraction (XRD) measurements show that the films grown on (110) NdGaO3 have a preferred (11 n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values of zero resistance (T(sub co)) and critical current density obtained are 87 K and 105 A/sq cm, respectively.

Raina, K. K.↗
NASA NTRS1995

Growth and Analysis of Highly Oriented (11n) BCSCO Films for Device Research

Films of BCSCO superconductor of the type Bi2CaSr2Cu2O(x), have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (greater than 860 C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values, zero resistance (T(sab co)) and critical current density obtained are 87 K and 10(exp 5) A/sq cm respectively.

Raina, K. K.↗
NASA NTRS1992

Thin film growth of the 2122-phase of BCSCO superconductor with high degree of crystalline perfection

Thin films of the 80 K-phase of BiCaSrCu-oxide superconductor having the composition of Bi2Ca1.05Sr2.1Cu2.19O(x) and high degree of crystalline perfection have been grown on c-axis oriented twin free single crystal substrates of NdGaO3. This has been achieved by carefully establishing the growth conditions of the LPE experiments. The temperature regime of 850 to 830 C and quenching of the specimens on the termination of the growth period are found to be pertinent for the growth of quasi-single crystalline superconducting BCSCO films on NdGaO3 substrates. The TEM analysis reveals a single crystalline nature of these films which exhibit 100 percent reflectivity in infrared regions at liquid nitrogen temperature.

Raina, K. K.↗
DOE OSTI2025

Interfacial reconstruction effects in insulating double perovskite Nd2NiMnO6/SrTiO3 and Nd2NiMnO6/NdGaO3 thin films

Ferromagnetic insulating (FMI) double perovskite oxides (DPOs) A2BB′O6 with near-room-temperature Curie temperatures are promising candidates for ambient-temperature spintronics applications. To realize their potential, epitaxial stabilization of DPO films and understanding the effect of multiple broken symmetries across the film/substrate interface are crucial. This study investigates ultrathin films of the FMI Nd2NiMnO6 grown on SrTiO3 (STO) and NdGaO3 (NGO) substrates. By comparing growth on these substrates, we examine the influence of polarity and structural symmetry mismatches, which are absent in the NGO system. The interface exhibits immeasurable resistance in both cases. Using synchrotron x-ray diffraction, we show that films have three octahedral rotational domains because of the structural symmetry mismatch with the STO substrate. Furthermore, our coherent Bragg rod analysis of specular x-ray diffraction reveals a significant modification of the out-of-plane lattice parameter within a few unit cells at the film/substrate interface and the surface. This arises from polarity compensation and surface symmetry breaking, respectively. These structural alterations influence the Mn orbital symmetry, a dependence that we further confirm through x-ray linear dichroism measurements. Since the ferromagnetism in insulating DPOs is mediated by orbital-dependent superexchange interactions [Phys. Rev. Lett. 100, 186402 (2008)0031-900710.1103/PhysRevLett.100.186402], our study provides a framework for understanding the evolution of magnetism in ultrathin geometry.

Bhattacharya, Nandana↗
NASA NTRS1993

Optical response of an ultrathin film and a large-angle grain-boundary in superconducting YBa2Cu3O(7-delta)

We have investigated the optical response of epitaxial ultrathin (3 nm) YBa2Cu3O(7-delta) film on an NdGaO3 substrate and thin (50 nm) film of YBa2Cu3O(7-delta) on a bicrystal SrTiO3 substrate. While the current-voltage characteristics of the ultrathin film indicate a Kosterlitz-Thouless transition (associated with vortex-antivortex unbinding) at a temperature T(KT), we do not observe any optical response at or below T(KT). An enhanced optical response with nonbolometric characteristics was observed from the grain-boundary as compared to the bolometric optical response of the epitaxial film at the resistive transition. These results indicate that the grain-boundary weak links play a significant role in the enhanced optical response near Tc.

Bhattacharya, S.↗
NASA NTRS1995

Oxide perovskite crystals for HTSC film substrates microwave applications

The research focused upon generating new substrate materials for the deposition of superconducting yttrium barium cuprate (YBCO) has yielded several new hosts in complex perovskites, modified perovskites, and other structure families. New substrate candidates such as Sr(Al(1/2)Ta(1/2))O3 and Sr(Al(1/2)Nb(1/2))O3, Ba(Mg(1/3)Ta(2/3))O3 in complex oxide perovskite structure family and their solid solutions with ternary perovskite LaAlO3 and NdGaO3 are reported. Conventional ceramic processing techniques were used to fabricate dense ceramic samples. A laser heated molten zone growth system was utilized for the test-growth of these candidate materials in single crystal fiber form to determine crystallographic structure, melting point, thermal, and dielectric properties as well as to make positive identification of twin free systems. Some of those candidate materials present an excellent combination of properties suitable for microwave HTSC substrate applications.

Bhalla, A. S.↗