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7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materials Data on Nd(SiOs)2 by Materials Project

Nd(OsSi)2 crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. Nd3+ is bonded in a 8-coordinate geometry to eight equivalent Os+1.50- atoms. All Nd–Os bond lengths are 3.25 Å. Os+1.50- is bonded in a 4-coordinate geometry to four equivalent Nd3+ and four equivalent Si atoms. All Os–Si bond lengths are 2.41 Å. Si is bonded in a 5-coordinate geometry to four equivalent Os+1.50- and one Si atom. The Si–Si bond length is 2.62 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Synthesis and magnetic properties of the Shastry-Sutherland family R 2 Be 2 SiO 7 ( R = Nd , Sm , Gd-Yb )

Compounds forming the quasi-two-dimensional Shastry-Sutherland lattice (SSL) have attracted significant experimental and theoretical attention in the field of frustrated magnetism. This is primarily due to their realization of an exactly soluble J 1 –J 2 orthogonal dimer model capable of hosting magnetic order, dimer singlet, and plaquette singlet phases in zero applied field and their complex magnetic phase diagrams with fractional magnetization plateaus and possible superfluid and supersolid phases found between the plateau states. The discovery and characterization of SSL compounds based on rare-earth magnetic ions provide a direct route to study the stability and properties of these exotic magnetic phases in systems with a variety of different magnetic anisotropies. In this paper, we discuss the synthesis and magnetic characterization of polycrystalline samples of the R 2 ⁢Be 2 ⁢SiO 7 family, where R=Nd, Sm, and Gd-Yb. All family members crystallize in the space group $P\bar{⁢4}⁢2_1⁢m$ (113) and show no signs of long-range magnetic order above 2 K, except for R=Tb which orders antiferromagnetically at 2.6 K.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Chemical characterisation of degraded nuclear fuel analogues simulating the Fukushima Daiichi nuclear accident

The Fukushima Daiichi accident generated degraded nuclear fuel material, mixed with other reactor components, known as molten core-concrete interaction (MCCI) material. Simulant MCCI material was synthesised, excluding highly radioactive fission products, containing depleted U, and incorporating Ce as a surrogate for Pu. Multi-modal µ-focus X-ray analysis revealed the presence of the expected suite of U-Zr-O containing minerals, in addition to crystalline silicate phases CaSiO 3 , SiO 2 -cristobalite and Ce-bearing percleveite, (Ce,Nd) 2 Si 2 O 7 . The formation of perclevite resulted from reaction between the U-Zr-O-depleted Ce-Nd-O melt and the silicate (SiO 2 ) melt. It was determined that the majority of U was present as U 4 , whereas Ce was observed to be present as Ce 3+ , consistent with the highly reducing synthesis conditions. A range of Fe-containing phases characterised by different average oxidation states were identified, and it is hypothesised that their formation induced heterogeneity in the local oxygen potential, influencing the oxidation state of Ce.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Selective transport of light vs. heavy rare earth elements by sulfate/bisulfate complexes in hydrothermal fluids

Here, this study explores the transport of rare earth elements (REE) in acidic sulfate-bearing hydrothermal fluids and the implications for the fractionation of light/heavy REE in critical mineral deposits. The speciation of Nd (light REE) and Yb (heavy REE) sulfate complexes were determined via in situ Raman spectroscopy using fused SiO 2 capillary cells up to 300 ºC at saturated water vapor pressure and in a hydrothermal diamond anvil cell up to 500 ºC and 540 MPa. The REE monosulfate (REESO 4 + ) and REE disulfate (REE(SO 4 ) 2 - ) species are stable below 150 to 250 ºC but become less stable at higher temperatures, particularly the light REE, due to the decreased solubility of REE sulfate solids. At higher pressure, these REE sulfate complexes display an increased stability field up to 400 ℃. The REE bisulfate complex (REEHSO 4 2+ ) was identified with a wide stability field below 400 ºC for the HREE in acidic Yb 2 (SO 4 ) 3 -bearing solutions, whereas in Nd 2 (SO 4 ) 3 -bearing solutions, the LREE bisulfate complex is restricted to below 100 ℃. These results suggest that bisulfate is a previously unrecognized selective ligand for heavy REE transport at low temperature in acidic oxidized hydrothermal fluids. Such fluids are responsible for hydrothermal alteration in many REE deposits. Prediction of phase stabilities across pressure, temperature, and composition space (P-T- x ) is crucial for predicting the role of aqueous REE sulfate complexes in the mobilization of REE in crustal fluids.

58 GEOSCIENCES↗
DOE OSTI2025

Wide bandgap photoconductor (SiC:V)-based optically addressed light valve for high fluence operation

Optically addressable light valves based on wide bandgap 4H- and 6H-SiC as photoconductors were designed to withstand higher operational laser fluences than the state of-the-art bismuth silicon oxide (BSO; Bi 12 SiO 20 ) based devices. Vanadium-doped SiC was selected as the photoconductors due to their reasonable photoresponsivity while many fold improvement in laser induced damage threshold as compared to BSO. The laser induced damage threshold values of the materials were measured after exposing ~ 200 sites on the samples to increasing levels of fluence of a gaussian pulsed Nd: YAG laser system (1064 nm) with a 5 Hz repetition rate. The measured damage threshold values for BSO, 4H- and 6H-SiC were 0.4 J/cm 2 , 1.75 J/cm 2 and 1.8 J/cm 2 , respectively. Photoconductive switches based on 4H and 6H-SiC samples were characterized at wavelengths of 380 nm, 405 nm, and 447 nm. The peak photoresponsivity values of the 4H- and 6H-SiC materials were measured to be under 380 nm and 405 nm, respectively. The photoconductor was bonded to a BK7 optical window with 5 μm diameter microspheres as spacers. A twisted nematic type E7 liquid crystal (LC) was filled in the 5 μm gap in a vacuum chamber. The desired alignment of the liquid crystal was achieved by mutually orthogonal orientation of LC alignment layers on the two mating faces (SiC and BK7). The fabricated devices were modulated using address beams of wavelengths 380 nm, 405 nm, and 447 nm. In conclusion, required transmission levels of > 90% was achieved for the fabricated OALVs for a sinusoidal voltage waveform that meets the lifetime requirement of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Optically Addressable Light Valve Based on a GaN:Mn Photoconductor

Semi-insulating manganese-doped gallium nitride (GaN:Mn) layers epitaxially grown on unintentionally doped GaN substrates were used as photoconductors in optically addressable light valves (OALVs) to withstand higher operational laser fluences compared to current state-of-the-art OALVs where bismuth silicon oxide (BSO; Bi 12 SiO 20 ) layers are used as photoconductors. GaN:Mn promises to be an exciting material for optoelectronic operations due to its large laser fluence handling capability and photoresponsivity near the band edge. The laser damage thresholds for the semi-insulating epitaxial GaN:Mn layer and the n-type substrate layer were measured to be 2.4 and 4.2 J/cm 2 , respectively. These are 6–10 times higher than that of BSO (0.4 J/cm 2 ). These measurements were performed by exposing ~200 sites on the samples to increasing fluence levels from a Gaussian pulsed Nd:YAG laser system (1064 nm) operating at a 5 Hz repetition rate with a 3 ns pulse width. Photoresponsivity of the GaN:Mn material was investigated at discrete wavelengths of 447, 405, and 380 nm. Further, the peak photoresponsivity was observed under an illumination wavelength of 380 nm and is attributed to stronger absorption. The OALV was fabricated by attaching a 110-μm-thick GaN:Mn layer grown on a 280-μm-thick n-GaN layer to a 3-mm-thick BK7 optical window. A twisted nematic E7 liquid crystal was introduced to the 5 μm gap between the two components. Transmission levels of >90% were achieved for the fabricated OALVs for a peak voltage of 40 V, constrained by transmission “bleed-through”.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Understanding spectral dependance of laser-induced damage precursors in dielectric materials (Full report_23-ERD-006)

The performance of high-energy laser systems is constrained by laser-induced damage in dielectric coatings, particularly those containing hafnium oxide (HfO 2 ). While thresholds at fundamental Nd harmonics are well studied, the spectral dependence of damage initiation—especially under dual-wavelength irradiation—remains poorly characterized. This project provides the first systematic investigation of wavelength-dependent laser damage in hafnia coatings, focusing on nanoscale precursors such as craze lines, nanobubbles, stoichiometric variations, nodules, and controlled crystallization. Coatings were fabricated via ion beam sputtering and electron-beam deposition and characterized using spectrophotometry, ellipsometry, AFM, GI-XRD, RBS, PCI absorption, and fs/ns laser damage testing. Results show that craze lines, benign under infrared light, strongly initiate damage under UV due to wavelength-selective field intensification. Substituting xenon for argon suppresses nanobubbles and improves UV thresholds by up to 32%. Oxygen modulation reveals that fully oxidized films maximize UV resistance, though at the cost of porosity and stress in multilayers. HfO 2 –SiO 2 composites resist crystallization and defects while achieving ppm-level absorption and elevated thresholds, whereas full crystallization of HfO 2 enhances LIDT by reducing defects and improving thermal transport. Collectively, these findings link photon energy, defect states, and bandgap collapse, providing a predictive framework for wavelength-dependent laser damage. The outcomes directly inform the design of durable, multi-wavelength coatings for facilities such as NIF, MEC, HAPLS, and DPAL, advancing the readiness of next-generation optics.

36 MATERIALS SCIENCE↗