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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Correlated nanoelectronics and the second quantum revolution

The growing field of correlated nanoelectronics exists at the intersection of two established fields: correlated oxide electronics and semiconductor nanoelectronics. The development of quantum technologies that exploit quantum coherence and entanglement for the purposes of computation, simulation, and sensing will require complex material properties to be controlled at nanoscale dimensions. Heterostructures and nanostructures formed at the interface between LaAlO 3 and SrTiO 3 exhibit striking behavior that arises from the ability to program the conductive behavior at extreme nanoscale dimensions. The active electronic layer, SrTiO 3 , exhibits a wide range of gate-tunable phenomena such as ferroelectricity, ferroelasticity, magnetism, superconductivity, and spin–orbit coupling, all of which can be controlled at the nanoscale using two reversible methods: conductive atomic force microscope lithography and ultra-low-voltage electron beam lithography. Mesoscopic devices such as single-electron transistors and quasi-one-dimensional electron waveguides can be “sketched” using these techniques, and the properties of these devices differ significantly from those created from traditional semiconductors, such as Si or GaAs. The strongly correlated nature of the SrTiO 3 system is evident from superconducting behavior as well as a state in which electrons are paired outside the superconducting state. A highly exotic phase was discovered in which a degenerate quantum liquid is formed from bound states of n = 2, 3, 4, … electrons. Further development of correlated nanoelectronics based on the LaAlO 3 /SrTiO 3 system can potentially lead to a general platform for quantum simulation as well as a pathway for the development of highly entangled states of multiple photons.

36 MATERIALS SCIENCE↗
DOE OSTI2022

An epitaxial graphene platform for zero-energy edge state nanoelectronics

Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.

42 ENGINEERING↗
DOE OSTI2020

Empowering 2D nanoelectronics via ferroelectricity

Introducing ferroelectricity to two-dimensional (2D) van der Waals (vdW) materials such as graphene, transition metal dichalcogenides, and black phosphorous presents a promising route for developing high-speed and low-power nanoelectronics. This Perspective reviews two actively pursued materials strategies, ferroelectric/vdW heterostructures and vdW ferroelectric materials. Finally, the topics discussed include their application potential and performance limitations as memory, logic, sensing, and optical devices, as well as the challenges and outlook of the field.

2D materials↗
DOE OSTI2026

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer‐free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44‐nm insulating STO layer, ultra‐low‐voltage electron‐beam lithography (ULV‐EBL) writes conductive nanostructures at the now‐accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Two-Dimensional C 4 N Global Minima: Unique Structural Topologies and Nanoelectronic Properties

Atomically thin 2D materials have drawn great attention due to their many potential applications. We herein report two novel structures of 2D C 4 N identified by first-principles calculations in combination with a swarm structure search. Here, these two structures (with symmetry of Pm and P 2 / m ) are almost degenerate in energy (with only 4 meV/atom difference) and exhibit quite similar structural topologies, both consisting of alternative arrays of C–N hexagon and arrays of C–N pentagon–octagon–pentagon. The Pm structure is semiconducting with a direct band gap of 90 meV at HSE. In contrast, the P 2 / m structure is a zero-band-gap semimetal and possesses the distorted Dirac cone, showing the direction-dependent Fermi velocity and electronic properties. Thus the predicted C 4 N monolayers are promising for applications in nanoelectronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Plasma-Enhanced Atomic Layer Deposition Synthesis of Nanolayered Molybdenum Diselenide (MoSe 2 ) Thin Films for Nanoelectronics

Nanolayered molybdenum diselenide (MoSe 2 ) thin films were synthesized by plasma-enhanced atomic layer deposition (PE-ALD) using molybdenum pentachloride (MoCl 5 ) and diethyldiselenide (C 4 H 10 Se 2 ) precursors. Scanning and transmission electron microscopy revealed horizontally stacked nanolayers near the substrate and vertically oriented nanosheets at the surface of the film. X-ray diffraction confirmed the (002), (100), and (110) reflections of crystalline MoSe 2 , while X-ray photoelectron spectroscopy showed relative atomic concentrations of 33.5% Mo and 66.5% Se, consistent with stoichiometric MoSe 2 . Raman spectra exhibited characteristic E 1g , A 1g , and E$^1_{2g}$ vibrational modes. Field-effect transistors incorporating PE-ALD-grown MoSe 2 as the channel material displayed p-type behavior, demonstrating the potential of nanolayered MoSe 2 for nanoelectronic applications. This work demonstrates the feasibility of low-temperature, stoichiometric growth of nanolayered MoSe 2 by PE-ALD and its direct integration into transistor architectures.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.

This paper describes our work over the past few years to use tools from quantum chemistry to describe electronic structure of nanoelectronic devices. These devices, dubbed "artificial atoms", comprise a few electrons, con ned by semiconductor heterostructures, impurities, and patterned electrodes, and are of intense interest due to potential applications in quantum information processing, quantum sensing, and extreme-scale classical logic. We detail two approaches we have employed: nite-element and Gaussian basis sets, exploring the interesting complications that arise when techniques that were intended to apply to atomic systems are instead used for artificial, solid-state devices.

Gamble, John King↗
DOE OSTI2020

Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics

This Special Issue of physica status solidi (a) features presentations of Symposium D, 2019 Spring-EMRS Meeting in Nice, France. Silicon in various bulk forms remains a fascinating material allowing for solar cell efficiency records by ultimate passivation of the bulk, surfaces, and contacts. In parallel, Si nanostructures emerge as capable building blocks in diverse fields ranging from nano-electronics and photonics to sensing. This symposium aimed to share the latest research in these fields and to create new interdisciplinary ideas.

14 SOLAR ENERGY↗
DOE OSTI2019

Scientific and Technical Basis of Application of Nanostructured Materials Science and Nanoelectronics in Systems of Electromechanical Energy Converters for Special Purposes

We consider the current state of a completely new area of science; microsystem electromechanics. Тhe wide spectra of its practical applications and prospects for further development are analyzed. We discuss in detail two main directions of creating micro- and nanoelectromechanical converters as basic elements of microsystem electromechanics: “top down” and “down top.” We also describe the main technological methods in constructing basic functional elements of microsystem electromechanics, areas of their application in traditional and new technologies (information and computer technologies, medicine, aerospace, rocket and artillery systems, etc.). At the same time, we discuss some key issues of generalized physical and mathematical modeling of microelectromechanical and nanoelectromechanical systems (MEMS and NEMS). A new generalized approach is proposed to study dynamic and energy characteristics of MEMS and NEMS as complex dynamic systems with binary conjugate subsystems. Based on proposed theoretical principles and models, the possibilities of studying electrophysical characteristics of biological nanostructures have been considered.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Nanoelectronics with proximitized materials

While materials design for many device applications usually relies on adding impurities, recent advances in scaling-down heterostructures with improved interfacial properties offer a different way to transform a large class of materials. A given material can be drastically changed by inheriting properties leaking from its neighboring regions, such as magnetism, superconductivity, or spin-orbit coupling. While these proximity effects often have a short range and are considered negligible, the situation is qualitatively different in atomically thin and two-dimensional materials where the extent of proximity effects can exceed their thickness. Consequently, proximitized materials have a potential to display novel properties and device opportunities, absent in any of the constituent region of the considered heterostructures. Such proximitized materials could provide platforms for a wide range of emerging applications: from seamless integration of memory and logic, to fault-tolerant topologically protected quantum computing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Structural Changes in YBa 2 Cu 3 O 7 Thin Films Modified with He + -Focused Ion Beam for High-Temperature Superconductive Nanoelectronics

Irradiation of high-temperature superconductor YBa 2 Cu 3 O 7 (YBCO) with high-energy He + ions is known to cause structural changes in the YBCO film, decreasing the critical temperature T C and finally leading to a superconductor-to-insulator transition. Here, this allows one to pattern narrow insulating regions with a focused ion beam (FIB) and thus fabricate nanoscale Josephson junctions on YBCO films. Moreover, such ion irradiation is known to cause structural changes in the YBCO film. However, details of how these structural changes occur in nanoscale devices produced by FIB remain unknown. Using nanofocus X-ray diffraction, we study the changes in the YBCO crystal lattice and investigate how the nature of these changes depends on the size of the irradiated regions. These data provide an important understanding of how oxide superconductors can be tailored at the nanometer scale for various applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

The Steady March Toward Biomimetic Nanoelectronics

Abstract. Steady progress in unveiling nature’s long-range charge transport mechanisms in redox proteins, and in the development of versatile self-assembling scaffolds and de novo proteins by design are separate fields that soon may intersect to yield the first artificial bioelectronic wires. Here we summarize compelling developments in these areas that put a spotlight on the prospect of their convergence, featuring in particular recent work by Dai et al. that clearly illustrates success in intentional design with nuanced control, binding multiple c-type hemes into a specific ordered array bearing the essential hallmarks of heme chains in bacterial multiheme cytochromes.

Rosso, Kevin M.↗
DOE OSTI2023

Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics

Abstract Materials keeping thickness in atomic scale but extending primarily in lateral dimensions offer properties attractive for many emerging applications. However, compared to crystalline counterparts, synthesis of atomically thin films in the highly disordered amorphous form, which avoids nonuniformity and defects associated with grain boundaries, is challenging due to their metastable nature. Here we present a scalable and solution-based strategy to prepare large-area, freestanding quasi-2D amorphous carbon nanomembranes with predominant sp 2 bonding and thickness down to 1–2 atomic layers, from coal-derived carbon dots as precursors. These atomically thin amorphous carbon films are mechanically strong with modulus of 400 ± 100 GPa and demonstrate robust dielectric properties with high dielectric strength above 20 MV cm −1 and low leakage current density below 10 −4 A cm −2 through a scaled thickness of three-atomic layers. They can be implemented as solution-deposited ultrathin gate dielectrics in transistors or ion-transport media in memristors, enabling exceptional device performance and spatiotemporal uniformity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗