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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Stroboscopic x-ray diffraction microscopy of dynamic strain in diamond thin-film bulk acoustic resonators for quantum control of nitrogen-vacancy centers

Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (N-V) center defect in diamond. This mechanism has previously been harnessed for unconventional quantum spin control, spin decoherence protection, and quantum sensing. Bulk-mode acoustic wave devices are also important in the microelectronics industry as microwave filters. A key challenge in both applications is a lack of appropriate operando microscopy tools for quantifying and visualizing gigahertz-frequency dynamic strain. Here, in this work, we directly image acoustic strain within N-V center-coupled diamond thin-film bulk acoustic wave resonators using stroboscopic scanning hard x-ray diffraction microscopy at the Advanced Photon Source. The far-field scattering patterns of the nanofocused x-ray diffraction encode strain information entirely through the illuminated thickness of the resonator. These patterns have a real-space spatial variation that is consistent with the bulk strain’s expected modal distribution and a momentum-space angular variation from which the strain amplitude can be quantitatively deduced. We also perform optical measurements of strain-driven Rabi precession of of the N-V center spin ensemble, providing an additional quantitative measurement of the strain amplitude. As a result, we directly measure one of the six N-V spin-stress coupling parameters, 𝑏 =2.73⁢(2) MHz/GPa, by correlating these measurements at the same spatial position and applied microwave power. Our results demonstrate a unique technique for directly imaging ac lattice strain in micromechanical structures and provide a direct measurement of a fundamental constant for the N-V center defect spin Hamiltonian.

acoustic techniques↗
DOE OSTI2020

Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Nitrogen-vacancy (N-V) centers in diamond work as a quantum electrometer. Using an ensemble state of N-V centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage is measured, while applying a transverse magnetic field. The response of the energy-level shift against the electric field is significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, our team obtains the components of the electric field generated in the device.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

N - V –Diamond Magnetic Microscopy Using a Double Quantum 4-Ramsey Protocol

We introduce a double quantum (DQ) 4-Ramsey measurement protocol that enables wide-field magnetic imaging using nitrogen-vacancy (N-V) centers in diamond, with enhanced homogeneity of the magnetic sensitivity relative to conventional single quantum (SQ) techniques. The DQ 4-Ramsey protocol employs microwave-phase alternation across four consecutive Ramsey (4-Ramsey) measurements to isolate the desired DQ magnetic signal from any residual SQ signal induced by microwave pulse errors. In a demonstration experiment employing a 1-μm-thick N-V layer in a macroscopic diamond chip, the DQ 4-Ramsey protocol provides a volume-normalized dc magnetic sensitivity of η V = 34nTHz –1/2 μm 3/2 across a 125 μm × 125 μm field of view, with about 5× less spatial variation in sensitivity across the field of view compared to a SQ measurement. Furthermore, the improved robustness and magnetic sensitivity homogeneity of the DQ 4-Ramsey protocol enables imaging of dynamic broadband magnetic sources such as integrated circuits and electrically active cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

High-Precision Mapping of Diamond Crystal Strain Using Quantum Interferometry

Crystal-strain variation imposes significant limitations on many quantum sensing and information applications for solid-state defect qubits in diamond. Thus, the precision measurement and control of diamond crystal strain is a key challenge. Here, we report diamond strain measurements with a unique set of capabilities, including micron-scale spatial resolution, a millimeter-scale field of view, and a 2-order-of-magnitude improvement in volume-normalized sensitivity over previous work, reaching 5(2)×10 -8 /√Hzμm -3 (with spin-strain coupling coefficients representing the dominant systematic uncertainty). We use strain-sensitive spin-state interferometry on ensembles of nitrogen-vacancy (N-V) color centers in single-crystal bulk diamond with low strain gradients. This quantum interferometry technique provides insensitivity to magnetic-field inhomogeneity from the electronic and nuclear spin bath, thereby enabling long N-V–ensemble electronic spin dephasing times and enhanced strain sensitivity, as well as broadening the potential applications of the technique beyond isotopically enriched or high-purity diamond. We demonstrate the strain-sensitive measurement protocol first on a confocal scanning laser microscope, providing quantitative measurement of sensitivity as well as three-dimensional strain mapping; and second on a wide-field-imaging quantum diamond microscope. Our strain-microscopy technique enables fast, sensitive characterization for diamond material engineering and nanofabrication; as well as diamond-based sensing of strains applied externally, as in diamond anvil cells or embedded diamond stress sensors, or internally, as by crystal damage due to particle-induced nuclear recoils.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Reporter-Spin-Assisted T 1 Relaxometry

A single-spin quantum sensor can quantitatively detect and image fluctuating electromagnetic fields via their effect on the sensor spin’s relaxation time, thus revealing important information about the target solid-state or molecular structures. However, the sensitivity and spatial resolution of spin relaxometry are often limited by the distance between the sensor and target. Here, we propose an alternative approach that leverages an auxiliary reporter spin in conjunction with a single-spin sensor, a diamond nitrogen-vacancy (N-V) center. We show that this approach can realize a 100-fold measurement sensitivity improvement for realistic working conditions and we experimentally verify the proposed method using a single shallow N-V center. Our work opens up a broad path of inquiry into a range of possible spin systems that can serve as relaxation sensors without the need for optical initialization and readout capabilities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Formation of tunable diamond micro- and nanopillars for field effect enhancement applications

Here, we developed a process for the fabrication of tunable single crystal diamond micro- and nanopillars, with tip widths ranging from 40 to 460 nm, densities ranging from 0.5 to 53.5 pillars/μm 2 , and heights greater than 4.5 μm. A self-assembled Au nanodot ensemble etch mask was formed from an annealed Au thin film. The nanodot diameter and density can be tuned using the initial film thickness. The pillars were etched from the nanodot mask using an RIE O 2 plasma, which has infinite selectivity for the diamond when applied at low RF powers (50 W). Finally, the pillars can be sharpened to ~40 nm tip widths by annealing in air at 650 °C. These pillars can be used for applications such as field effect enhancement of diamond photocathode devices, enhancement of optical emission from N-V centers, and antireflective coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on VN by Materials Project

VN is Molybdenum Carbide MAX Phase-like structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. V3+ is bonded to six equivalent N3- atoms to form a mixture of edge, face, and corner-sharing VN6 octahedra. The corner-sharing octahedral tilt angles are 45°. All V–N bond lengths are 2.07 Å. N3- is bonded to six equivalent V3+ atoms to form a mixture of distorted edge and corner-sharing NV6 pentagonal pyramids.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on V4N3 by Materials Project

V4N3 crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. there are two inequivalent V+2.25+ sites. In the first V+2.25+ site, V+2.25+ is bonded in a square co-planar geometry to four N3- atoms. There are two shorter (2.01 Å) and two longer (2.04 Å) V–N bond lengths. In the second V+2.25+ site, V+2.25+ is bonded to five N3- atoms to form a mixture of edge and corner-sharing VN5 square pyramids. There are one shorter (2.03 Å) and four longer (2.04 Å) V–N bond lengths. There are two inequivalent N3- sites. In the first N3- site, N3- is bonded to six V+2.25+ atoms to form a mixture of edge and corner-sharing NV6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. In the second N3- site, N3- is bonded to six V+2.25+ atoms to form a mixture of edge and corner-sharing NV6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗