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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

High-T c Superconducting Memory Cell

In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-T c ) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-T c memory cell. In conclusion, our results for the high-T c memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗
DOE OSTI2025

Asynchronous aging and turnover of human circulating and tissue-resident memory T cells across sites

Memory T cells are maintained in tissues as circulating effector-memory (T EM ) and tissue-resident (T RM ) populations for protective immunity, though the role of site and subset in memory persistence remains undefined. Here, in this work, we investigated age-associated dynamics of human T cells in lymphoid organs, mucosal sites, and blood over 10 decades of life using retrospective radiocarbon ( 14 C) birth dating, along with cellular, transcriptome, and epigenetic profiling. Memory T cells across peripheral sites exhibited continuous turnover with mean lifespans of 1–2 years, while the spleen contained longer-lived T cells. Over age, T EM cells expressed senescent markers and a GZMK transcriptional signature, while T RM cells maintained site-specific resident phenotypes without exhibiting features of senescence. Both T EM and T RM cells showed age-associated DNA hypomethylation, though T RM cells exhibited more epigenetically regulated genes. Together, our findings reveal asynchronous aging of human memory T cells by subset and site, as well as persistence of T RM cells without immunosenescence.

T cells↗
DOE OSTI2022

A Highly Effective African Swine Fever Virus Vaccine Elicits a Memory T Cell Response in Vaccinated Swine

African Swine Fever Virus (ASFV) is the causative agent of a highly contagious and lethal vector-borne disease in suids. Recently, a live attenuated virus strain, developed using the currently circulating, virulent Georgia strain (ASFV-G) with a single gene deletion (ASFV-G-ΔI177L), resulted in an effective vaccine. Nevertheless, protective immune response mechanisms induced by this candidate are poorly understood. In this study, Yorkshire crossbred swine intramuscularly vaccinated with 10 6 50% hemadsorption dose (HAD 50 ) of ASFV-G-ΔI177L or a vehicle control were challenged at 28 days post-inoculation (dpi) with 10 2 HAD 50 of ASFV-G. Analysis of purified peripheral blood mononuclear cells following inoculation and challenge revealed that CD4+, CD8+ and CD4+CD8+ central memory T cells (CD44+CD25–CD27–CD62L+CCR7+, T cm ) decreased significantly by 28 dpi in ASFV-G-ΔI177L-vaccinated swine compared to baseline and time-matched controls. Conversely, CD4+, CD8+ and CD4+CD8+ effector memory T cells (CD44+CD25–CD27–CD62–CCR7–, T em ) increased significantly among ASFV-G-ΔI177L-vaccined swine by 28 dpi compared to baseline and time-matched controls. Additionally, the percentage of natural killer (NK), CD4+ and CD4+CD8+ T em and CD8+ T cm and T em positive for IFNγ increased significantly following inoculation, surpassing that of controls by 28 dpi or earlier. These results suggest that NK and memory T cells play a role in prote

60 APPLIED LIFE SCIENCES↗
DOE OSTI2026

A scalable superconducting nanowire memory array with row–column addressing

Scalable superconducting memory is required for the development of low-energy superconducting computers and fault-tolerant quantum computers. Conventional superconducting logic-based memory cells possess a large footprint that limits scaling; nanowire-based superconducting memory cells, although more compact, have high error rates, which hinders integration into large arrays. Here we report a 4 × 4 superconducting nanowire memory array that is designed for scalable row–column operations and has a functional density of 2.6 Mbit cm −2 . Each memory cell is based on a nanowire loop consisting of two temperature-dependent superconducting switches and a variable kinetic inductor. The arrays operate at 1.3 K, where we implement and characterize multiflux quanta state storage and destructive read-out. By optimizing the write- and read-pulse sequences, we minimize bit errors and maximize operating margins. We achieve a minimum bit error rate of 10 −5 . Here, we also use circuit-level simulations to understand the memory cell’s dynamics, performance limits and stability under varying pulse amplitudes.

Electrical and electronic engineering↗
DOE OSTI2022

Ballistic reversible superconducting memory element

A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell.

Frank, Michael P.↗
DOE OSTI2022

Analysis of Vector Particle-In-Cell (VPIC) memory usage optimizations on cutting-edge computer architectures

Vector Particle-In-Cell (VPIC) is one of the fastest plasma simulation codes in the world, with particle numbers ranging from one trillion on the first petascale system, Roadrunner, to ten trillion particles on the more recent Blue Waters supercomputer. As supercomputers continue to grow rapidly in size, so too does the gap between computing capability and memory capability. Current memory systems limit VPIC simulations greatly as the maximum number of particles that can be simulated directly depends on the available memory. In this study, we present a suite of VPIC memory optimizations (i.e., particle weight, half-precision, and fixed-point optimizations) that enable a significant increase in the number of particles in VPIC simulations. Here, we assess the optimizations’ impact on memory and runtime performance for a suite of cutting-edge computer architectures such has the NVIDIA V100 GPU, the IBM Power9, and the Fujitsu A64FX architectures. Our optimizations enable a 31.25% reduction in memory usage and up to 40% increase in the number of particles. This paper extends our work on developing particle storage format optimizations Tan et al.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

Silicon-based microelectronics are limited to ~150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

42 ENGINEERING↗
DOE OSTI2022

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Preexisting memory CD4 + T cells contribute to the primary response in an HIV-1 vaccine trial

Naive and memory CD4 + T cells reactive with human immunodeficiency virus type 1 (HIV-1) are detectable in unexposed, unimmunized individuals. The contribution of preexisting CD4 + T cells to a primary immune response was investigated in 20 HIV-1–seronegative volunteers vaccinated with an HIV-1 envelope (Env) plasmid DNA prime and recombinant modified vaccinia virus Ankara (MVA) boost in the HVTN 106 vaccine trial (clinicaltrials.gov NCT02296541). Prevaccination naive or memory CD4 + T cell responses directed against peptide epitopes in Env were identified in 14 individuals. After priming with DNA, 40% (8/20) of the elicited responses matched epitopes detected in the corresponding preimmunization memory repertoires, and clonotypes were shared before and after vaccination in 2 representative volunteers. In contrast, there were no shared epitope specificities between the preimmunization memory compartment and responses detected after boosting with recombinant MVA expressing a heterologous Env. Preexisting memory CD4 + T cells therefore shape the early immune response to vaccination with a previously unencountered HIV-1 antigen.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

Biophysical and Structural Features of αβT ‐Cell Receptor Mechanosensing: A Paradigmatic Shift in Understanding T‐Cell Activation

ABSTRACT αβT cells protect vertebrates against many diseases, optimizing surveillance using mechanical force to distinguish between pathophysiologic cellular alterations and normal self‐constituents. The multi‐subunit αβT‐cell receptor (TCR) operates outside of thermal equilibrium, harvesting energy via physical forces generated by T‐cell motility and actin‐myosin machinery. When a peptide‐bound major histocompatibility complex molecule (pMHC) on an antigen presenting cell is ligated, the αβTCR on the T cell leverages force to form a catch bond, prolonging bond lifetime, and enhancing antigen discrimination. Under load, the αβTCR undergoes reversible structural transitions involving partial unfolding of its clonotypic immunoglobulin‐like (Ig) domains and coupled rearrangements of associated CD3 subunits and structural elements. We postulate that transitions provide critical energy to initiate the signaling cascade via induction of αβTCR quaternary structural rearrangements, associated membrane perturbations, exposure of CD3 ITAMs to phosphorylation by non‐receptor tyrosine kinases, and phase separation of signaling molecules. Understanding force‐mediated signaling by the αβTCR clarifies long‐standing questions regarding αβTCR antigen recognition, specificity and affinity, providing a basis for continued investigation. Future directions include examining atomistic mechanisms of αβTCR signal initiation, performance quality, tissue compliance adaptability, and T‐cell memory fate. The mechanotransduction paradigm will foster improved rational design of T‐cell based vaccines, CAR‐Ts, and adoptive therapies.

Immunology↗
DOE OSTI2025

Securing 3D NAND Without Density Loss via In-Situ Encryption Using a Single Transistor XOR Cell

In this article, we push lightweight XOR-based in-situ encryption to extreme density by proposing a singletransistor XOR memory cell and applying it to 3D NAND, enabling secure data storage without density loss. Using a ferroelectric field-effect transistor (FeFET) as an example technology, we demonstrate that: i) a single-transistor memory can realize the XOR function by exploiting the ability to charge the source and drain separately and control current flow direction, eliminating the need for conventional encrypted cells that rely on complementary devices; ii) with a XOR-based cipher, encryption and decryption can be mapped to in-situ array operations, where ciphertext is stored as the threshold voltage (VTH) states of FeFETs in a NAND string, and decryption is achieved through read operations using key-dependent complementary source/drain bias; iii) the proposed technique is scalable to multi-level cell (MLC) storage by encrypting and decrypting data bit by bit; iv) using an integrated NAND FeFET array, we experimentally demonstrate encryption and decryption operations for both single-level cell (SLC) and MLC storage; v) systemlevel benchmarking shows that the proposed technique achieves 48× and 278× improvements in encryption and decryption throughput, respectively, compared to AES.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A Novel Scalable Array Design for III-V Compound Semiconductor-based Nonvolatile Memory (UltraRAM) with Separate Read-Write Paths

The dream of achieving a universal memory that can provide robust non-volatile memory states along with low-energy operation has been the key driving force of memory research. Despite dominating the memory market, conventional charge-based memories cannot satisfy these requirements. However, UltraRAM, an oxide-free charge-based memory cell, aims to achieve both of these requirements. This device achieves non-volatility (with an endurance of over 10 7 cycles and a retention of over 1000 years) along with switching at low-voltage (±2.3 V) utilizing a triple-barrier resonant tunneling (TBRT) structure made of InAs/AlSb. In this work, we propose an array design for UltraRAM-based memory devices. Our proposed memory array features separate read-write path and eliminates the possibility of accidentally switching the memory states stored in the array. Moreover, our design allows us to read all the cells in a column in one cycle without imposing any limit on the scalability. Besides, since the read operation in our proposed design is independent of the write mechanism, there is flexibility to optimize the read operation for memory and in-memory computing applications.

Alam, Shamiul↗
DOE OSTI2023

Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and non-intentional dielectric interfaces and their effects upon the ferroelectric film wake up and circuit parameters become important to understand. In this work, the effect of the addition of a linear dielectric aluminum oxide, Al 2 O 3 , below a ferroelectric Hf 0.58 Zr 0.42 O 2 film in a capacitor structure for FeRAM applications with NbN electrodes was measured. Depolarization fields resulting from the linear dielectric is observed to induce a reduction of the remanent polarization of the ferroelectric. Addition of the aluminum oxide also impacts the wake up of the HZO with respect to the cycling voltage applied. Intricately linked to the design of a FeRAM 1C/1T cell, the metal-ferroelectric-insulator-metal (MFIM) devices are observed to significantly shift charge related to the read states based on aluminum oxide thickness and wake up cycling voltage. As a result, a 33% reduction in the separation of read states is measured, which complicates how a memory cell is designed and illustrates the importance of clean interfaces in devices.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Short-Term Forecasting of Thermostatic and Residential Loads Using Long Short-Term Memory Recurrent Neural Networks

Internet of Things (IoT) devices in smart grids enable intelligent energy management for grid managers and personalized energy services for consumers. Investigating a smart grid with IoT devices requires a simulation framework with IoT devices modeling. However, there lack comprehensive study on the modeling of IoT devices in smart grids. This paper investigates the IoT device modeling of a thermostatic load and implements the recurrent neural networks model for short-term load forecasting in this IoT-based thermostatic load. The recurrent neural network structure is leveraged to build a load forecasting model on temporal correlation. The temporal recurrent neural network layers including long short-term memory cells are employed to learn the data from both the simulation platform and New South Wales residential datasets. The simulation results are provided for demonstration.

electric load forecasting↗
DOE OSTI2026

A Survey on the Expanding Scope and Interdisciplinary Opportunities for Processing-in-Memory Techniques

Processing-in-Memory (PIM) is emerging as a practical path to overcome the limitations of traditional von Neumann architectures. At its core, PIM systems implement computing primitives such as logic operations and multiply-accumulate acceleration through compute-in-memory, near-memory processing, or hybrid designs. The role of memory cells varies widely across technologies, acting as inputs, outputs, or analog accumulators through bit-lines and sense amplifiers. This diversity creates trade-offs in precision, bandwidth, latency, and programmability, making it difficult to build a unified understanding on the progress of the field. In this survey, we organize recent advances of PIM into three areas. First, we discuss the progress on the architectural optimizations of PIM and its integration with both DRAM and emerging non-volatile memories. Second, we examine how PIM is being used to accelerate key computing domains, including generative AI workloads and high-performance kernels, along with new approaches. Third, we highlight the growing adoption of PIM in computational sciences, where it is being applied to solve interdisciplinary problems such as genome analysis, mRNA quantification, mass spectrometry, quantum circuit simulation, wave modeling, and secure computation. Finally, we synthesize the major challenges that continue to slow PIM adoption, including manufacturing constraints, power delivery, thermal reliability, data consistency, runtime and memory-management coordination, and the difficulty of building portable software abstractions without sacrificing commercial viability. This work provides an updated, structured perspective on PIM’s potential across computing and computational sciences and the barriers that must be solved for it to reach its full impact.

Asifuzzaman, Kazi [Oak Ridge National Laboratory (↗
DOE OSTI2022

Data-driven based coordinated smart inverter control for distributed energy resources

Smart inverters (SI) for distributed energy resources (DER) are becoming popular since they have the ability to stabilize as well as restore the voltage and frequency of power systems. Aiming at establishing the mathematical models combined with SI control methods, multiple optimization methods are developed. However, the computational complexity of solving such a mathematical model with various uncertainties limits the real-time application of the SI control. To conquer this challenge, a data-driven-based SI control approach is developed to achieve coordinated control in the high penetration DER system. First, an optimization problem for maximizing the active power generation and minimizing the power loss is designed using the Volt/VAR control. To reduce the time consumption, the recurrent neural network (RNN) is proposed to model the relationship between the uncertainties and control actions during the offline site. The RNN with different sub-structures such as the long short-term memory cell and gated recurrent unit cell are included to enrich the diversity of features. In the last stage, different experiment comparisons, including multiple uncertainties maps and stateof- art machine learning methods, are conducted to verify the effectiveness of the proposed method based on the IEEE 123 bus power system. The results demonstrate that the proposed method can effectively achieve a rapid and coordinated control with a lower error rate.

Qiu, Wei↗
DOE OSTI2023

A new class of antibodies that overcomes a steric barrier to cross-group neutralization of influenza viruses

Antibody titers that inhibit the influenza virus hemagglutinin (HA) from engaging its receptor are the accepted correlate of protection from infection. Many potent antibodies with broad, intra-subtype specificity bind HA at the receptor binding site (RBS). One barrier to broad H1-H3 cross-subtype neutralization is an insertion (133a) between positions 133 and 134 on the rim of the H1 HA RBS. We describe here a class of antibodies that overcomes this barrier. These genetically unrestricted antibodies are abundant in the human B cell memory compartment. Analysis of the affinities of selected members of this class for historical H1 and H3 isolates suggest that they were elicited by H3 exposure and broadened or diverted by later exposure(s) to H1 HA. RBS mutations in egg-adapted vaccine strains cause the new H1 specificity of these antibodies to depend on the egg adaptation. The results suggest that suitable immunogens might elicit 133a-independent, H1-H3 cross neutralization by RBS-directed antibodies.

60 APPLIED LIFE SCIENCES↗