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At least 19 records

Superlattices and multilayer structures for high efficiency solar cells

Possible applications of superlattices to photovoltaic structures are discussed. A new concept based on doping superstructures (NIPI) can be exploited to significantly reduce recombination losses in III-V compound solar cells. A novel multijunction structure with lateral current transport is proposed. A computer simulation has been performed which shows that by optimizing the multilayer structure, short circuit current is substantially increased with minimum drop in open circuit voltage. An additional advantage of the structure is enhanced radiation tolerance. It is anticipated that this multilayer structure can be incorporated in multibandgap cells to achieve high efficiencies.

Wagner, M.

Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom

A method of producing a multilayer structure that has reduced interfacial roughness and interlayer mixing by using a physical-vapor deposition apparatus. In general the method includes forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of monolayers of the second material using a high incident adatom energy.

Wadley, Hadyn N. G.

Detection of bondline delaminations in multilayer structures with lossy components

The detection of bondline delaminations in multilayer structures using ultrasonic reflection techniques is a generic problem in adhesively bonded composite structures such as the Space Shuttles's Solid Rocket Motors (SRM). Standard pulse echo ultrasonic techniques do not perform well for a composite resonator composed of a resonant layer combined with attenuating layers. Excessive ringing in the resonant layer tends to mask internal echoes emanating from the attenuating layers. The SRM is made up of a resonant steel layer backed by layers of adhesive, rubber, liner and fuel, which are ultrasonically attenuating. The structure's response is modeled as a lossy ultrasonic transmission line. The model predicts that the acoustic response of the system is sensitive to delaminations at the interior bondlines in a few narrow frequency bands. These predictions are verified by measurements on a fabricated system. Successful imaging of internal delaminations is sensitive to proper selection of the interrogating frequency. Images of fabricated bondline delaminations are presented based on these studies.

Madaras, Eric I.

Wave tilt sounding of multilayered structures

The relationship between the wave tilt and the electrical parameters of a multilayered structure is investigated. Particular emphasis is placed on the inverse problem associated with the sounding planetary surfaces. An inversion technique, based on multifrequency wave tilt, is proposed and demonstrated with several computer models. It is determined that there is close agreement between the electrical parameters used in the models and those in the inversion values.

Warne, L.

A current access, self-structured, multilayered bubble domain memory

Preliminary experimental results are reported on a self-structured, multilayer bubble memory with buried data layer. Stripe domains are used to move carrier bubbles by magnetostatic coupling. An expression is derived for that coupling as a function of thickness of the GGG separation layer. Experimental values of coupling are given as a function of bias field. An expression for stripe curvature as a function of bias field is derived. The performance of seven different current access stripe propagation circuits is reported.

Stermer, R. L., Jr.

Generalized pulse equations for through-transmission evaluation of arbitrary multilayered structures

Generalized transit time and pulse amplitude equations were derived for modelling the ultrasonic through-transmission wave propagation of an arbitrary n-layered structure. The equations can be programmed into an expert system and used to identify and predict the through-transmission pulse signals from the critical interfaces of a multilayered structure. To test the formulas, the through transmission was measured from one- and three-layered configurations in the laboratory. The experimental measurements were compared with computer-generated data determined using the derived equations. The results verify the validity of the formulas.

Chern, E. James

Generalized pulse equations for through-transmission evaluation of arbitrary multilayered structures

Generalized transit-time and pulse-amplitude equations have been derived for modeling the ultrasonic through-transmission wave propagation of an arbitrary n-layered structure. The equations can be programmed into an expert system and used to identify and predict the through-transmission pulse signals from the critical interfaces of a multilayered structure. To test the formulas, the through-transmission responses from one- and three-layered configurations were measured in the laboratory and compared with computer-generated data that were determined using the derived equations. The results verify the validity of the formulas.

Chern, E. James

A comparative study of experimental and simulated ultrasonic pulse-echo signals from multilayered structures

The effect on the system acoustic response of variations in the adhesive thickness, coupling thickness, and paint thickness is considered. Both simulations and experimental measurements are used to characterize and classify A-scans from test regions, and to study the effects of various parameters such as paint thickness and epoxy thickness on the variations in the reflected signals. A 1D model of sound propagation in multilayered structures is used to verify the validity of the measured signals, and is also used to computationally generate signals for a class of test locations with gradually varying parameters. This approach exploits the ability of numerical simulations to provide a good understanding of the ultrasonic pulses reflected at disbonds.

Abedin, M. N.

Design and Characterization of Hybrid Multilayer Structures: Layer-by-Layer Growth of Polymer and Graphene Oxide Assemblies and Their Utility in Fuel Cell Applications

We report the layer-by-layer growth of poly- (ethylenimine) (PEI) that has been modified with sulfamate functionalities (S-PEI) using Zr 4+ -complexation interlayer linking chemistry. We have also deposited adlayers of graphene oxide (GO) that have been modified to possess sulfate functionalities (SGO), onto the S-PEI layers. The multilayer assemblies are formed with sulfamate/sulfate and sulfate/sulfate (S-PEI + S-GO) interlayer linking chemistry. In all cases the adlayer thickness is consistent with predictions based on van der Waals volume and/or molecular mechanics calculations. X-ray photoelectron spectroscopy (XPS) is used to characterize the Zr/S stoichiometry in the multilayer assembly. The utility of these hybrid multilayer structures is demonstrated in a Proton Exchange Membrane (PEM) fuel cell, where they are shown to reduce H 2 gas crossover by 15% with only a 12 nm thick layer.

fuel cell

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

GaN AlN GaN/AlN

(abstract) Mechanism of Selective Porosification at Heterojunctions in Group IV Multilayer Structures

Highly selective porosification of SiGe or Ge layers is observed in multilayer Si/SiGe or Si/Ge structures grown on (100)Si. These alternating porous/nonporous structures could potentially be used to fabricate light-emitting devices. The etch-selectivity appears to be dominated by band-structure effects and other factors such as lattice strain and electrochemical potential differences play a minor role. Additional structures and electrolytic etching are being examined to confirm these results.

porosification silicon Si Ge germanium light emitt

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures

The potential of wide-band-gap III-V nitrides as solar-blind ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN super lattices (digital alloys); and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, it should be possible to tailor the band gap of the composite to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a close lattice match (< 3%) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers could enable an extension of direct band-gap material towards the visible.

microscopy GaN AlN semiconductor SiC

Time-Dependent Thermally-Driven Interfacial Flows in Multilayered Fluid Structures

A computational study of thermally-driven convection in multilayered fluid structures will be performed to examine the effect of interactions among deformable fluid-fluid interfaces on the structure of time-dependent flow in these systems. Multilayered fluid structures in two models configurations will be considered: the differentially heated rectangular cavity with a free surface, and the encapsulated cylindrical liquid bridge. An extension of a numerical method developed as part of our recent NASA Fluid Physics grant will be used to account for finite deformations of fluid-fluid interfaces.

Haj-Hariri, Hossein

Lightweight, Durable, and Multifunctional Electrical Insulation Material Systems for High Voltage Applications

Newly developed multilayer structures of well-known polymer insulation materials significantly improved dielectric breakdown voltage, VB, or dielectric strength, K, if well-bonded, when compared to those of single material insulations or the commercial SOA systems, such as Teflon-Kapton-Teflon (TKT), at the same overall thickness. To date, the greatest improvement of the new structures from a few candidate materials, including various types of Kapton PIs and PFA or PET as bond layer (BL), was about 61% higher than that of the Kapton PI alone films, 40.1 vs. 24.9 kV, which was translated to 86.3% decrease in insulation thickness, thus significant volume and weight reduction of the final system. However, it was of interest to note that most improvements of the multilayer structures occurred at thicker overall thicknesses, above ~ 0.15 mm. Extensive analyses also showed that K of the multilayer structures increased with (i) decreasing individual layer thickness regardless of material type, (ii) increasing total accumulated thickness of PI or overall PI/BL ratio, and (iii) increasing number of interface or total number of layers, but only above the aforementioned overall thickness limit. Increases in VB of the multilayer structures were directly correlated with damage evolution and failure mode. With further material-design-process optimizations of the multilayer structures, it was expected to achieve other multifunctionalities, such as high partial discharge (PD) resistance, improved durability, EMI shielding, and high thermal dissipation in addition to high dielectric strength. These new structures can be used in various high voltage and high temperature applications, such as future hybrid or all electric aircraft wiring and power transmission as well as many other non-aerospace high power cables, electronic parts and components, printed circuit board, and so forth. The multilayer insulation system can be easily processed and manufactured with various conductor types via calendaring, compression-molding, stamping, laminating, vacuum-bagging and autoclaving, or 3D printing, even for complex 3-D components. Based on their unique structural configurations and potential capabilities, the new insulation system was identified as micro-multilayer multifunctional electrical insulation (MMEI). Patent application of the MMEI concept and current design configurations was filed for a 1-year provisional application (OAI-58834, Serial No.: 62/659,234), pending conversion to a U.S. utility application. This paper presents details of the MMEI structures, their dielectric performance analyses, potential mechanisms, and commercial scaleup feasibility assessment.

Electric aircrafts

Lightweight, Durable, and Multifunctional Electrical Insulation Material Systems for High Voltage Applications

Newly developed multilayer structures of well-known polymer insulation materials significantly improved dielectric breakdown voltage, VB, or dielectric strength, K, if well-bonded, when compared to those of single material insulations or the commercial SOA systems, such as Teflon-Kapton-Teflon (TKT), at the same overall thickness. To date, the greatest improvement of the new structures from a few candidate materials, including various types of Kapton PIs and PFA or PET as bond layer (BL), was about 61% higher than that of the Kapton PI alone films, 40.1 vs. 24.9 kV, which was translated to 86.3% decrease in insulation thickness, thus significant volume and weight reduction of the final system. However, it was of interest to note that most improvements of the multilayer structures occurred at thicker overall thicknesses, above ~ 0.15 mm. Extensive analyses also showed that K of the multilayer structures increased with (i) decreasing individual layer thickness regardless of material type, (ii) increasing total accumulated thickness of PI or overall PI/BL ratio, and (iii) increasing number of interface or total number of layers, but only above the aforementioned overall thickness limit. Increases in VB of the multilayer structures were directly correlated with damage evolution and failure mode. With further material-design-process optimizations of the multilayer structures, it was expected to achieve other multifunctionalities, such as high partial discharge (PD) resistance, improved durability, EMI shielding, and high thermal dissipation in addition to high dielectric strength. These new structures can be used in various high voltage and high temperature applications, such as future hybrid or all electric aircraft wiring and power transmission as well as many other non-aerospace high power cables, electronic parts and components, printed circuit board, and so forth. The multilayer insulation system can be easily processed and manufactured with various conductor types via calendaring, compression-molding, stamping, laminating, vacuum-bagging and autoclaving, or 3D printing, even for complex 3-D components. Based on their unique structural configurations and potential capabilities, the new insulation system was identified as micro-multilayer multifunctional electrical insulation (MMEI). Patent application of the MMEI concept and current design configurations was filed for a 1-year provisional application (OAI-58834, Serial No.: 62/659,234), pending conversion to a U.S. utility application. This paper presents details of the MMEI structures, their dielectric performance analyses, potential mechanisms, and commercial scaleup feasibility assessment.

Multifunctional

Crystalline 1D Coordination Polymer Inhibitor Layer Leads to Vertical Sidewalls in Selectively Deposited ZnO on Nanoscale Patterns

Area-selective atomic layer deposition (AS-ALD) is a promising technique for the fabrication of next-generation nanoelectronics. There are two main challenges in AS-ALD: (1) achieving high selectivity of deposition on the growth regions, and (2) preventing mushrooming of the growth material onto the nongrowth regions and achieving well-defined interfaces. In this work, we use benzenethiol (BT) as an inhibitor in the selective deposition of ZnO on SiO 2 in the presence of copper with and without a native oxide (Cu/CuO x ). We observe that BT forms a monolayer on the Cu surface and a Cu-thiolate multilayer structure on CuO x . Using grazing incidence X-ray diffraction combined with simulations, we find that the multilayer structure is crystalline and composed of 1D coordination polymers of Cu-thiolate. Here, using ellipsometry and X-ray photoelectron spectroscopy, we show that the BT consumes the entirety of the CuO x during multilayer formation, allowing the multilayer thickness to be tuned by the thickness of the original oxide. Both the monolayer BT and the multilayer BT prove to be effective inhibitors of ZnO ALD, blocking nearly 500 ALD cycles, which is more than twice that achieved with other thiol inhibitors. Finally, we demonstrate that the multilayer structure can prevent mushrooming of the ALD material onto the nongrowth surface of nanoscale patterns, creating vertical sidewalls with well-defined material interfaces and providing excellent pattern transfer, even for a relatively thick deposited film. As such, these results demonstrate that BT is not only an effective inhibitor but also that its ability to form tunable multilayers makes it well-suited for highly precise nanopatterning applications.

Layers

Magnetic and magneto-optical properties and domain structure of Co/Pd multilayers

The domain structure of Co/Pd(1.6/6.3 A)xN multilayers and its relation to the bulk magnetic properties of the samples were studied. The Co/Pd multilayers were deposited by rf and dc magnetron sputtering onto different substrates. It was found that magnetic and magnetooptical properties and domain structure of the multilayers were affected by total film thickness and substrate condition. Magnetization, coercivity, and anisotropy of the films decreased significantly as the film thickness dropped below 100 A. However, Kerr rotation angle had a maximum at the same thickness. The width of the domain structure increased with the decrease of the film thickness attaining the single domain state at N = 10. The initial curves in Co/Pd multilayers were found to depend on demagnetization process. The samples demagnetized by inplane field showed the largest difference between initial curves and the corresponding parts of the loops. Different domain structures were observed in the samples demagnetized by perpendicular and in-plane magnetic fields.

Gadetsky, S.