Molecular beams
Molecular beam research - square-wave phase modulation in molecular beam resonance studies and search for shift in transverse electromagnetic mass of electron
MOLECULAR BEAM↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Planetary atmospheric simulation using molecular beams.
Molecular beams for simulating orbital flight through planetary atmospheres, considering various nozzle beam systems
French, J. B.↗
Electron beam source molecular beam epitaxial growth of analog graded Al(x)Ga(1-x)As ballistic transistors
A new method has been developed for the growth of graded band-gap Al(x)Ga(1-x)As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded Al(x)Ga(1-x)As unipolar ballistic electron transistors.
Malik, Roger J.↗
Delayed Shutters For Dual-Beam Molecular Epitaxy
System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.
Grunthaner, Frank J.↗
Molecular-beam time-of-flight spectroscopy applied to molecular-beam performance measurements
Time of flight spectroscopic measurements in arc heated supersonic molecular beam using algebraic relations, sensing modulated beam by Orbitron type detector
Alcalay, J. A.↗
Some recent trends and advances in molecular beam research
Molecular beam research at low, intermediate and high energies, discussing inelastic processes, intermolecular potentials, etc
Amdur, I.↗
Programmable Phase Selection between Altermagnetic and Noncentrosymmetric Polymorphs of MnTe on InP via Molecular Beam Epitaxy
This dataset contains DFT input and output files supporting the theoretical modeling in the associated publication (ACS Appl. Mater. Interfaces 2026, 18, 15654-15664). The calculations model the interfacial energetics of two MnTe polymorphs — NiAs-MnTe (hexagonal, alpha phase) and ZnS-MnTe (cubic, gamma phase) — on InP(111) substrates with two surface terminations: In-terminated InP(111)A and P-terminated InP(111)B. This gives four interface configurations: NiAs on In-terminated (experimentally observed), NiAs on P-terminated (computed for comparison), ZnS on In-terminated (computed for comparison), and ZnS on P-terminated (experimentally observed). The dataset is organized into four calculation types, each covering all four polymorph/termination combinations: (i) Slabs: Pristine MnTe/InP heterostructure slabs used to compute total energies and interface energy densities (Eint) for all four configurations, as reported in Fig. 6 of the main text. (ii) Disorder: Same slab geometries with a P_Te + Te_P antisite defect pair introduced near the interface, used to assess chemical intermixing effects on interface stability (Fig. S8, SI). (iii) Strain: Pristine slab calculations with in-plane lattice parameters strained by -1% and +1% relative to the InP lattice constant, used to evaluate strain-dependent interface energetics (Fig. S9, SI). (iv) Charge_Density: Single-point calculations on the full heterostructure, the isolated InP slab, and the isolated MnTe slab at fixed geometry, used to compute differential charge density plots showing interfacial charge accumulation and depletion as a function of surface termination (Fig. S10, SI). Each calculation folder contains INCAR, KPOINTS, POSCAR, CONTCAR, OUTCAR, and POTCAR_info.txt (PAW potential information, excluding the full POTCAR due to VASP licensing restrictions). The calculations were performed using VASP 6.4.3 with PBE exchange-correlation, PAW potentials, a Hubbard correction of Ueff = 5 eV on Mn d-states, and A-type AFM spin initialization.
36 MATERIALS SCIENCE↗
Molecular beams in chemistry
Molecular beams of low, high, and intermediate energy, related to chemical reactions
Amdur, I.↗
Feasibility study to determine methods of measuring the temperature of a molecular beam Final report
Molecular beam sampling technique for temperature measurement of earth thermosphere
Fowler, P.↗
Molecular-Beam-Epitaxy Program
Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.
Sparks, Patricia D.↗
Initial performance study of the utias high energy molecular beam facility
High energy molecular beam facility
HIGH ENERGY↗
Molecular contamination study by interaction of a molecular beam with a platinum surface
The capability of molecular beam scattering from a solid surface is analyzed for identification of molecular contamination of the surface. The design and setup of the molecular beam source and the measuring setup for the application of a phase sensitive measuring technique for the determination of the scattered beam intensity are described. The scattering distributions of helium and nitrogen molecular beams interacting with a platinum surface were measured for different amounts of contamination from diffusion pump oil for surface temperatures ranging from 30 to 400 C. The results indicate the scattering of molecular beams from a platinum surface is a very sensitive method for detecting surface contamination.
Nuss, H. E.↗
Molecular beams in chemistry.
The molecular-beam technique is a means for producing isolated atoms or molecules within a narrow range of speed and solid angle. The phenomena studied with molecular beams can be classified as single-particle interactions, many-particle interactions, and two particle-interactions. The results of scattering experiments fall into two categories including collisions that do not result in atomic rearrangements and collisions that do. Experimental methods are discussed, giving attention to low-energy beams, high-energy beams, and intermediate-energy beams. Examples are presented to illustrate the information that can be obtained from elastic, inelastic, and reactive scattering.
Jordan, J. E.↗
Molecular-Beam Chopper and Four-Channel Amplifier
Molecular-beam chopper phase controller and timing interface is subsystem of four-stage, differentially pumped, modulated molecular-beam/mass spectrometer. Subsystem maintains accurate phase control and timing for repetitive signal averaging over several hours of operation. Chopper phase controller/ timing interface and four-channel programable time-multiplexed amplifier provide substantial improvements in attainable signal-to-noise ratio, detection limit, and accuracy of molecular-beam/mass-spectrometer system.
Adams, B. R.↗
STUDIES OF NORMAL MOMENTUM TRANSFER BY MOLECULAR BEAM TECHNIQUES
Momentum transfer by molecular beam techniques - gas dynamics
RAREFIED GAS DYNAMICS↗
Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy
GaAS/AlGaAs heterostructures have been grown by molecular-beam epitaxy on GaAs substrates intentionally oriented (tilted) a few degrees (0-6.5) off the (001) plane towards either (111)A, (111)B, or (011). It was observed that the 4-K photoluminescence and low-field electron transport properties of these structures may be functions of the substrate tilt angle and tilt direction, depending on the concentration of impurities incorporated during growth. A substrate tilt during molecular-beam epitaxy is observed to have the largest effect on these properties when the background impurity concentration in the molecular-beam epitaxial machine is high. This supports the contention that the observed changes in material characteristics are due to differences in the incorporation of defects and impurities. The incorporation of defects and impurities are reduced by using substrates tilted toward (111)A, in comparison to nominally flat (001) substrates or substrates tilted toward (111)B.
Radulescu, D. C.↗