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DENSITY DETERMINATIONS OF THE CORONAE OF COOL STARS USING A NEWLY ASSIGNED PAIR OF Fe xiv LINES IN THE SPECTRA OF α CANIS MINOR, α CENTAURI, AND THE SUN
We have identified a previously unassigned pair of lines between 169 and 170 Å in the coronae of cool stars. We attribute these lines to Fe xiv and show that their intensity ratio is sensitive to the electron density. Using observations taken with the Low Energy Transmission Grating Spectrometer of the Chandra X-ray Observatory we infer a density of log(n{sub e}/cm{sup −3}) = 10.2 ± 0.7 and 10.3 ± 0.8 from the newly identified line pair in the coronae of Procyon and α Cen A, respectively.
Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors
We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10 –2 cm 2 /s. We also report on the device's optical response characteristics at 78 K.
Effect of the scrape-off layer in AORSA full wave simulations of fast wave minority, mid/high harmonic, and helicon heating regimes
Several experiments on different machines and in different fast wave (FW) heating regimes, such as hydrogen minority heating and high harmonic fast waves, have found strong interactions between radio-frequency (RF) waves and the scrape-off layer (SOL) region. This paper examines the propagation and the power loss in the SOL by using the full wave code AORSA, in which the edge plasma beyond the last closed flux surface (LCFS) is included in the solution domain and a collisional damping parameter is used as a proxy to represent the real, and most likely nonlinear, damping processes. 3D AORSA results for the National Spherical Torus eXperiment (NSTX), where a full antenna spectrum is reconstructed, are shown, confirming the same behavior found for a single toroidal mode results in Bertelli et al, Nucl. Fusion, 54 083004, 2014, namely, a strong transition to higher SOL power losses (driven by the RF field) when the FW cut-off is moved away from in front of the antenna by increasing the edge density. Additionally, full wave simulations have been extended to “conventional” tokamaks with higher aspect ratios, such as the DIII-D, Alcator C-Mod, and EAST devices. DIII-D results show similar behavior found in NSTX and NSTX-U, consistent with previous DIII-D experimental observations. In contrast, a different behavior has been found for Alcator C-Mod and EAST, which operate in the minority heating regime unlike NSTX/NSTX-U and DIII-D, which operate in the mid/high harmonic regime. A substantial discussion of some of the main aspects, such as (i) the pitch angle of the magnetic field; (ii) minority heating vs. mid/high harmonic regimes is presented showing the different behavior of the RF field in the SOL region for NSTX-U scenarios with different plasma current. Finally, the preliminary results of the impact of the SOL region on the evaluation of the helicon current drive efficiency in DIII-D is presented for the first time and briefly compared with the different regimes mentioned above.
Control of DNA minor groove width and Fis protein binding by the purine 2-amino group
Abstract not provided
Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of {beta}-FeSi{sub 2} layers grown by molecular-beam epitaxy
We have epitaxially grown undoped {beta}-FeSi{sub 2} films on Si(111) substrates via atomic-hydrogen-assisted molecular-beam epitaxy. {beta}-FeSi{sub 2} films grown without atomic hydrogen exhibited p-type conduction with a hole density of over 10{sup 19} cm{sup -3} at room temperature (RT). In contrast, those prepared with atomic hydrogen showed n-type conduction and had a residual electron density that was more than two orders of magnitude lower than the hole density of films grown without atomic hydrogen (of the order of 10{sup 16} cm{sup -3} at RT). The minority-carrier diffusion length was estimated to be approximately 16 {mu}m using an electron-beam-induced current technique; this value is twice as large as that for {beta}-FeSi{sub 2} prepared without atomic hydrogen. This result could be well explained in terms of the minority-carrier lifetimes measured by a microwave photoconductance decay technique. The 1/e decay time using a 904 nm laser pulse was approximately 17 {mu}s, which is much longer than that for {beta}-FeSi{sub 2} prepared without atomic hydrogen (3 {mu}s). The photoresponsivity reached 13 mA/W at 1.31 {mu}m, which is the highest value ever reported for {beta}-FeSi{sub 2} films.
Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP
The mobility of electrons in double heterostructures of p-type Ga{sub 0.50}In{sub 0.50}P has been determined by measuring minority carrier diffusion length and lifetime. The minority electron mobility increases monotonically from 300 K to 5 K, limited primarily by optical phonon and alloy scattering. Comparison to majority electron mobility over the same temperature range in comparably doped samples shows a significant reduction in ionized impurity scattering at lower temperatures, due to differences in interaction of repulsive versus attractive carriers with ionized dopant sites. These results should be useful in modeling and optimization for multi-junction solar cells and other optoelectronic devices.
Cryogenic gamma detectors enable direct detection of 236 U and minor actinides for non-destructive assay [Cryogenic gamma detectors enable direct detection of minor actinides for non-destructive assay]
Here, we demonstrate the utility of a superconducting transition edge sensor (TES) γ-ray detector with high energy resolution and low Compton background for non-destructive assay (NDA) of a uranium sample from reprocessed nuclear fuel. We show that TES γ-detectors can separate low energy actinide γ-emissions from the background and nearby lines, even from minor isotopes whose signals are often obscured in NDA with conventional Ge detectors. Superconducting γ detectors may therefore bridge the gap between high-accuracy destructive assay (DA) and easier to-use NDA.
Enhancing Magnesite Formation at Low Temperature and High CO2 Pressure: The Impact of Seed Crystals and Minor Components
The formation of magnesite was followed in aqueous solution containing initially added Mg(OH)2 equilibrated with supercritical carbon dioxide (90 atm pressure, 50°C) in the presence of introduced magnesite particles and minor components, Co(II). As expected, the introduction of magnesite particles accelerated the formation of magnesite from solution. However, the formation rate of magnesite was even greater when small concentrations of Co(II) were introduced, indicating that the increased rate of magnesite formation in the presence of Co(II) was not solely due to the addition of a growth promoting surface. Detailed analysis of the magnesite particles by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and atom probe tomography (APT) revealed that the originally added Co(II) was concentrated in the center but also present throughout the growing magnesite particles. Addition of the Co(II) in different chemical forms (i.e. as solid phase CoCO3 or Co(OH)2) could alter the growth rate of magnesite depending upon the addition of bicarbonate to the starting solution. Geochemical modeling calculations indicate that this difference is related to the thermodynamic stability of these different phases in the initial solutions. More broadly, these results indicate that the presence of even small concentrations of foreign ions that form carbonate compounds with a similar structure as magnesite can be incorporated into the magnesite lattice, accelerating the formation of anhydrous carbonates in natural environments.
Three-dimensional minority-carrier collection channels at shunt locations in silicon solar cells
Not Available
Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
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Fuel Cycle Considerations for Uranium, Plutonium and Minor Actinide Partitioning and Transmutation
This paper is written in memorial of the authors' past collaborations with Max Salvatores in the area of advanced nuclear fuel cycle evaluation. In this regard, a summary is provided of the results from two international studies led by Max Salvatores in which the authors participated: (1) the expert group on Homogeneous versus Heterogeneous Recycling of Transuranics in Fast Nuclear Reactors, and (2) the expert group on Potential Benefits and Impacts of Advanced Nuclear Fuel Cycles with Actinide Partitioning and Transmutation. Both of these studies presented the authors with the opportunity to contribute the results of past and ongoing research in the U.S., facilitating engagement and discussion on these subjects with researchers from other countries and organizations, resulting in the creation of broad international views on the relative benefits and challenges of transuranic recycle (NEA, 2012a; NEA, 2012b), a testament to the leadership and capabilities of Max Salvatores. Published by Elsevier Ltd.
Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method
Not Available
Minority carrier barrier heterojunctions for improved thermoelectric efficiency
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Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN]
Here, inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4–6 × 10 13 protons/cm 2 . We also characterize the specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%–55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (V Ga -related), carbon impurities (C-related), and gallium interstitials (Ga i ). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ~500 nm, which suggests mobile Ga i . Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Ga i .