Kinetics of oxide film growth on metal crystals - Electron tunneling and ionic diffusion.
Growth rate of oxide and other dielectric contact films on metal crystals computed for ionic diffusion and electron tunneling
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Growth rate of oxide and other dielectric contact films on metal crystals computed for ionic diffusion and electron tunneling
Thermal oxidation kinetics of oxide film growth on metal crystals, considering ion diffusion and thermionic electron emission
The changes produced on metallic surfaces as a result of grinding and polishing are not as yet fully understood. Undoubtedly there is some more or less marked change in the crystal structure, at least, in the top layer. Hereby a diffusion of separated crystal particles may be involved, or, on plastic material, the formation of a layer in greatly deformed state, with possible recrystallization in certain conditions. Czochralski verified the existence of such a layer on tin micro-sections by successive observations of the texture after repeated etching; while Thomassen established, roentgenographically by means of the Debye-Scherrer method, the existence of diffused crystal fractions on the surface of ground and polished tin bars, which he had already observed after turning (on the lathe). (Thickness of this layer - 0.07 mm). Whether this layer borders direct on the undamaged base material or whether deformed intermediate layers form the transition, nothing is known. One observation ty Sachs and Shoji simply states that after the turning of an alpha-brass crystal the disturbance starting from the surface, penetrates fairly deep (approx. 1 mm) into the crystal (proof by recrystallization at 750 C).
The purpose of this experiment is to grow large, high-quality single crystals of the organic metal (TMTTF-TCNQ) by the diffusion method without thermal fluctuation due to convection and gravitational sedimentation, and to evaluate the difference in properties between such crystals grown in low gravity and the ones obtained on Earth. The expected results may fix several physical properties of TMTTF-TCNQ, lead to the discovery of new phenomena, and enable us to analyze diffusion processes in a precise way. The result will contribute to the development of research on organic metals and, generally, on crystal growth.
Epitaxial growth of single crystal, impurity free metal films using clean alkali halide surfaces in ultrahigh vacuum
This paper discusses the evolution, current status, and planning for facilities to exploit the microgravity environment of earth orbit in applied metallic materials science. Space-Shuttle based facilities and some precursor flight programs are reviewed. Current facility development programs and planned Space Station furnace capabilities are described. The reduced gravity levels available in earth orbit allow the processing of metallic materials without the disturbing influence of gravitationally induced thermal convection, stratification due to density differences in sample components, or the effects of hydrostatic pressure.
Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.
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The growth of single crystals of relatively high melting point metals such as silver, copper, gold, and their alloys was investigated. The purpose was to develop background information necessary to support a space flight experiment and to generate ground based data for comparison. The ground based data, when compared to the data from space grown crystals, are intended to identify any effects which zero-gravity might have on the basic process of single crystal growth of these metals. The ultimate purposes of the complete investigation are to: (1) determine specific metals and alloys to be investigated; (2) grow single metal crystals in a terrestrial laboratory; (3) determine crystal characteristics, properties, and growth parameters that will be effected by zero-gravity; (4) evaluate terrestrially grown crystals; (5) grow single metal crystals in a space laboratory such as Skylab; (6) evaluate the space grown crystals; (7) compare for zero-gravity effects of crystal characteristics, properties, and parameters; and (8) make a recommendation as to production of these crystals as a routine space manufacturing proceses.
Influence of crystal structure, orientation, and solubility on adhesion and sliding friction of metal single crystals in vacuum
Crystal structure, orientation and solubility effects on friction and adhesion of various metal single crystals in vacuum
Adhesion and sliding friction influenced by structure, orientation, and solubility of metal single crystals
Crystal structure and orientation, and solubility effects on adhesion and sliding friction of four metal single crystals in vacuum
The following definitions were sought in the research on single crystals of metal solid solutions: (1) the influence of convection and/or gravity present during crystallization on the substructure of a metal solid solution; (2) the influence of a magnetic field applied during crystallization on the substructure of a metal solid solution; and (3) requirements for a space flight experiment to verify the results. Growth conditions for the selected silver-zinc alloy system are described, along with pertinent technical and experimental details of the project.
The parameters and requirements for growing single crystals of relatively high melting point metals in a zero gravity environment are studied. The crystal growth of metals such as silver, copper, gold, and alloys with a melting point between 900-1100 C is examined.
Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.
Crystal engineering is a method for discovering new quantum materials and phases, which may be achieved using external pressure or strain. Chemical pressure is unique in that it generates internal pressure perpetually to the lattice. As an example, GdAlSi from the rare-earth (𝑅) 𝑅Al𝑋 (𝑋=Si or Ge) family of Weyl semimetals is considered. Replacing Si with the larger isovalent element Ge creates sufficiently large chemical pressure to induce a structural transition from the tetragonal structure of GdAlSi, compatible with a Weyl semimetallic state, to an orthorhombic phase in GdAlGe, resulting in an inversion-symmetry-protected nodal-line metal. We find that GdAlGe hosts an antiferromagnetic ground state with two successive orderings, at 𝑇 N 1=35K and 𝑇 N 2=30K. In-plane isothermal magnetization shows a magnetic field induced metamagnetic transition at 6.2 T for 2 K. Furthermore, electron-hole compensation gives rise to a large magnetoresistance of ∼100% at 2 K and 14 T. Angle-resolved photoemission spectroscopy measurements and density functional theory calculations reveal a Dirac-like linear band dispersion over an exceptionally large energy range of ∼1.5eV with a high Fermi velocity of ∼10 6 m/s, a rare feature not observed in any magnetic topological materials.
Electron thermal conductivity of non-ideal metals, taking into account arbitrary change and amplitude of electron scattering on ions and phonon spectra deformation by impurities