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At least 19 records

Magnetic Force Microscopy Images of Magnetic Garnet With Thin-Film Magnetic Tip

We present magnetic force microscopy images of YGdTmGa/YSmTmGa magnetic garnet, usinga thin Fe film deposited on Si_3N_5 tips. We have found correlations between the topography andthe magnetic domain structure. We have observed the domain wall contrast with a iron thin-film tip. We report on domain wall imaging of garnet with magnetic force microscopy.

Wadas, A.↗

Coercive force of thin magnetic films

Phenomenological model aids in understanding the mechanisms responsible for the easy-axis coercive force in thin magnetic films of NiFe, MnBi, and gadolinium iron garnet.

Baldwin, J. A.↗

Instrumentation of the variable-angle magneto-optic ellipsometer and its application to M-O media and other non-magnetic films

A new and comprehensive dielectric tensor characterization instrument is presented for characterization of magneto-optical recording media and non-magnetic thin films. Random and systematic errors of the system are studied. A series of TbFe, TbFeCo, and Co/Pt samples with different composition and thicknesses are characterized for their optical and magneto-optical properties. The optical properties of several non-magnetic films are also measured.

Zhou, Andy F.↗

Depositing spacing layers on magnetic film with liquid phase epitaxy

Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is better; and, good match of thermal expansion coefficients is provided.

Moody, J. W.↗

Thick film magnetic nanoparticulate composites and method of manufacture thereof

Thick film magnetic/insulating nanocomposite materials, with significantly reduced core loss, and their manufacture are described. The insulator coated magnetic nanocomposite comprises one or more magnetic components, and an insulating component. The magnetic component comprises nanometer scale particles (about 1 to about 100 nanometers) coated by a thin-layered insulating phase. While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase provides the desired soft magnetic properties, the insulating material provides high resistivity, which reduces eddy current loss.

Ma, Xinqing↗

dc modulation noise in thin film magnetic recording disk media

A study of dc modulation noise as a function of magnetic layer thickness has been conducted for plated longitudinal low-noise Co-alloy disk media with a range of 900 to 1100 Oe. The noise, produced by the application of a reverse longitudinal dc field to a uniformly magnetized disk, supplies data regarding the uniformity of the disk. A spectrum analyzer measures the noise by means of electronic detection, and noise spectra and autocorrelation functions calculated with a model are compared to the experimental results. The model correlates with experimental data to more than 0.99. The maximum distance between effective transitions diminishes from 2.8 microns to 1 micron when the thickness of the magnetic layer is increased from 25 nm to 60 nm. The maximum average transition amplitude is found to be independent of thickness, and is bounded by 0.001 of the saturation magnetization.

Katti, R. R.↗

Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

Nouhi, Akbar↗

Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

Nouhi, Akbar↗