Gain suppression study on LGADs at the CENPA tandem accelerator
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Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.
The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for several applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well as quantum information. In addition to high time resolution and thanks to the AC-coupling of the electrodes, LGAD silicon sensors can provide high resolution in the measurement of spatial coordinates of an incident minimum ionizing particle. Such AC-coupled LGADs, also known as AC-LGADs, are therefore considered as candidates for future detectors to provide 4-dimensional measurements in a single sensing device with 100% fill factor. This article presents the first characterization of an AC-LGAD sensor with a proton beam of 120 GeV momentum at Fermilab. The sensor consists of strips with 80 μm width, fabricated at Brookhaven National Laboratory. The signal properties, efficiency, spatial, and time resolution are presented. Overall, the experimental results show that the time resolution of such an AC-LGAD is compatible to standard LGADs with similar gain, and that AC-LGADs can be segmented with fine pitches as standard strip or pixel detectors.
AC-LGAD sensors are prime candidates for fast and precise measurement of charged particles in a variety of applications. In a fine-pitched pixel or strip AC-LGAD sensor, the signal generated by the passage of a particle is not localized in a limited volume in the sensor, but is shared among multiple electrodes. This signal sharing characteristic allows us to improve the spatial resolution of AC-LGAD sensors beyond the capabilities of common silicon trackers. Since the magnitude of the shared signal depends on the distance between the pixels or strips and the point of passage of the particle, signal sharing is strongly influenced by the geometry of the sensor. The electrode pitch and gap size as well as the shape can be fine tuned to maximize the space resolution, while keeping the detector granularity and the number of channels to be read out under control. Prototypes of AC-LGAD sensors produced at the Brookhaven National Laboratory covering a variety of possible geometries have been studied via Transient Current Technique using an infrared laser, and the signal sharing, spatial resolution, and time resolution of the different topologies have been measured. These results have been compared with measurements performed in test-beams with 120 GeV protons at the Fermilab Test Beam Facility. A time resolution of ~30 ps can be achieved using AC-LGAD sensors with a thickness of 50 μm, compatible to that of standard DC-coupled LGADs, while presenting a far superior spatial resolution. Finally, this combination of high precision, fast timing capabilities, and low material budget makes AC-LGADs an ideal choice for a truly 4D detector.
The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well as quantum information. However, finding a technology capable of fulfilling such aspiration proved to be an arduous task. Among other silicon-based candidates, the Low-Gain Avalanche Diode (LGAD) has already shown excellent timing performances but proved to be unsuitable for fine pixelization. Therefore, the AC-coupled LGAD (AC-LGAD) approach was introduced to provide high resolution in both time and space, making it a promising candidate for future 4D detectors. However, appropriate readout electronics must be developed to match the sensor's fast-time and fine-pitch capabilities. This is currently a major technological challenge. Here, we test AC-LGAD prototypes read out by the fast-time ASIC ALTIROC 0, originally developed for the readout of DC-coupled LGADs for the ATLAS experiment at the High Luminosity-LHC. Signal generated by either betas from a 90 Sr source or a focused infra-red laser were analyzed. This paper details the first successful readout of an AC-LGAD sensor using a readout chip. This result will pave the way for the design and construction of a new generation of AC-LGAD-based 4D detectors.
The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for several applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well as quantum information. In addition to high time resolution and thanks to the AC-coupling of the electrodes, LGAD silicon sensors can provide high resolution in the measurement of spatial coordinates of an incident minimum ionizing particle. Such AC-coupled LGADs, also known as AC-LGADs, are therefore considered as candidates for future detectors to provide 4-dimensional measurements in a single sensing device with 100$\%$ fill factor. This article presents the first characterization of an AC-LGAD sensor with a proton beam of 120 GeV momentum at Fermilab. The sensor consists of strips with 80 $\mu$m width, fabricated at Brookhaven National Laboratory. The signal properties, efficiency, spatial, and time resolution are presented. The experimental results show that the time resolution of such an AC-LGAD is compatible to standard LGADs with similar gain, and that AC-LGADs can be segmented with fine pitches as standard strip or pixel detectors.
This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a 90Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61 ps was achieved, comparable to that of standard Si LGADs. The present limitation in the time resolution of 4H-SiC LGADs appears to stem from limited charge generation. Nevertheless, their higher voltage tolerance and faster carrier drift suggest that, with increased charge collection, their timing performance could approach or even surpass that of Si LGADs. Furthermore, these results demonstrate the strong potential of 4H-SiC LGADs as a robust platform for precision timing in future 4D tracking detectors, while also highlighting that signal charge is the dominant factor currently limiting their performance, indicating that further optimization of gain and drift structures will be essential for future development.
The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.
Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.
In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. Using the CENPA Tandem accelerator at the University of Washington, the response of LGADs with different thicknesses to MeV-range energy deposits from a proton beam were studied. Three LGAD prototypes of 50 μm, 100 μm, and 150 μm were characterized. The devices' gain was determined as a function of bias voltage, incidence beam angle, and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. LGADs are considered for the active target (ATAR), and energy linearity is an important property for particle ID capabilities.
The ETROC (Endcap Timing Readout Chip) is being developed for the LGAD-based CMS Endcap Timing Layer (ETL) at HL-LHC. The ETL on each side of the interaction region will be instrumented with a two-disk system of MIP-sensitive LGAD silicon devices to be read out by ETROCs for precision timing measurement with down to 30 ps timing resolution. The ETROC is designed to handle a 16 x 16 pixel cell matrix, with each pixel cell being 1.3 mm x 1.3 mm to match the LGAD sensor pixel size. Approximately 15% of the sensors near the highest eta region will experience hadron fluence above 1e15 neq/cm² towards end of operation of HL-LHC, resulting in small signal amplitude with LGAD gain reduced to around 10. For this reason, the front-end design for preamplifier and discriminator has been specifically optimized for the reduced LGAD signals, with enough flexibilities to meet the ETL specific needs for time resolution, power budget and radiation profile.
AC-LGADs, also referred to as resistive silicon detectors, are a recent development of low-gain avalanche detectors (LGADs), based on a sensor design where the multiplication layer and n + contact are continuous, and only the metal layer is patterned. In AC-LGADs, the signal is capacitively coupled from the continuous, resistive n + layer over a dielectric to the metal electrodes. Therefore, the spatial resolution is not only influenced by the electrode pitch, but also the relative size of the metal electrodes. Signal propagation between the metallized areas and charge sharing between electrodes plays a larger role in these detectors than in conventional silicon sensors read out in DC mode. AC-LGADs from two manufacturers were studied in beam tests and with infrared laser scans. The impact of n + layer resistivity and metal electrode pitch on the charge sharing and achievable position resolution is shown. For strips with 100 μm pitch, a resolution of ¡ 5 μm can be reached. Additionally, the charge sharing between neighboring strips is investigated in more detail, indicating the induction of signal charge and subsequent re-sharing over the n + layer. Furthermore, an approach to identify signal sharing over large distances is presented.
4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.
Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.
Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a p + -doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10–100. This technology can provide time resolution on the order of 20–30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a ^90Sr source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. Here, the experimental results are also compared to TCAD simulations.
The analog front-end for the Low Gain Avalanche Detector (LGAD) based precision timing application in the CMS Endcap Timing Layer (ETL) has been prototyped in a 65 nm CMOS mini-ASIC named ETROC0. Serving as the very first prototype of ETL readout chip (ETROC), ETROC0 aims to study and demonstrate the performance of the analog frontend, with the goal to achieve 40 to 50 ps time resolution per hit with LGAD (therefore reach about 30ps per track with two detector-layer hits per track). ETROC0 consists of preamplifier and discriminator stages, which amplifies the LGAD signal and generates digital pulses containing time of arrival and time over threshold information. This paper will focus on the design considerations that lead to the ETROC front-end architecture choice, the key design features of the building blocks, the methodology of using the LGAD simulation data to evaluate and optimize the front-end design. The ETROC0 prototype chips have been extensively tested using charge injection and the measured performance agrees well with simulation. The initial beam test results are also presented, with time resolution of around 33 ps observed from the preamplifier waveform analysis and around 41 ps from the discriminator pulses analysis. A subset of ETROC0 chips have also been tested to a total ionizing dose of 100 MRad with X-ray and no performance degradation been observed.