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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Time Resolution Characterization of 4H-SiC LGADs with a 90 Sr Source

This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a 90Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61 ps was achieved, comparable to that of standard Si LGADs. The present limitation in the time resolution of 4H-SiC LGADs appears to stem from limited charge generation. Nevertheless, their higher voltage tolerance and faster carrier drift suggest that, with increased charge collection, their timing performance could approach or even surpass that of Si LGADs. Furthermore, these results demonstrate the strong potential of 4H-SiC LGADs as a robust platform for precision timing in future 4D tracking detectors, while also highlighting that signal charge is the dominant factor currently limiting their performance, indicating that further optimization of gain and drift structures will be essential for future development.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗
DOE OSTI2025

Measured gain suppression in FBK LGADs with different active thicknesses

In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. Using the CENPA Tandem accelerator at the University of Washington, the response of LGADs with different thicknesses to MeV-range energy deposits from a proton beam were studied. Three LGAD prototypes of 50 μm, 100 μm, and 150 μm were characterized. The devices' gain was determined as a function of bias voltage, incidence beam angle, and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. LGADs are considered for the active target (ATAR), and energy linearity is an important property for particle ID capabilities.

Particle tracking detectors↗
DOE OSTI2025

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Gain characterization of LGAD sensors with beta particles and 28-MeV protons

Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a p + -doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10–100. This technology can provide time resolution on the order of 20–30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a ^90Sr source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. Here, the experimental results are also compared to TCAD simulations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Performance of neutron and proton irradiated AC-LGAD sensors

Characterization of strip and pixel AC-LGAD devices with both laser TCT and probe station (IV/CV) will be shown on AC-LGADs irradiated with 1 MeV reactor neutrons at JSI/Ljubljana and with 400 MeV protons at FNAL ITA to fluences from 1e13~$n_{eq}/cm^2$ to a few times 1e15~$n_{eq}/cm^2$. This study was conducted within the scope of the ePIC detector time of flight (TOF) layer R&D program at the EIC, which will feature AC-LGADs with strip and pixel geometry. Sensors in the TOF layer will receive up to 1e13 $n_{eq}/cm^2$ fluence over the lifetime of the experiment.

AC-LGAD strips↗
DOE OSTI2025

Results for pixel and strip centimeter-scale AC-LGAD sensors with a 120 GeV proton beam

Here, we present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that reducing the thickness of pixel sensors significantly enhances their time resolution, with 20-μm-thick sensors achieving around 20 ps. Uniform performance is attainable with optimized n + sheet resistance, making these sensors ideal for future timing detectors. Conversely, 20-μm-thick strip sensors exhibit higher jitter than similar pixel sensors, negatively impacting time resolution, despite reduced Landau fluctuations with respect to the 50-μm-thick versions. Additionally, it is observed that a low resistivity in strip sensors limits signal size and time resolution, whereas higher resistivity improves performance. This study highlights the importance of tuning the n+ sheet resistance and suggests that further improvements should target specific applications like the Electron–Ion Collider or other future collider experiments. In addition, the detailed performance of four AC-LGADs sensor designs is reported as examples of possible candidates for specific detector applications. These advancements position AC-LGADs as promising candidates for future 4D tracking systems, pending the development of specialized readout electronics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Performance of an X-γ ray detection system based on a thick silicon LGAD

We present the performance of a X-γ ray detection systems based on a 300 µm thick silicon low-gain avalanche diode (LGAD) and of an equivalent Diode structure without the gain layer, read-out by a custom-made low-noise charge amplifier. For the LGAD structure, the multiplication gains M s from 10.2 to 19.3 are measured, and the Equivalent Noise Charge (ENC) components have been studied in detail. As expected, a significant reduction of the white and 1/f voltage series and dielectric ENC components is observed with increasing gain, shortening the optimum peaking time to τ = 0.4÷8 μs depending on the gain value, with respect to the standard diode, while the parallel ENC component increases proportionally to the gain up to M s = 15. Setting the gain M s = 12.7, a minimum ENC = 34.5 electrons r.m.s. (298 eV FWHM) at τ = 1 μs is found. However, the electronic noise, evaluated on the pulser FWHM, is found to only marginally contribute to the width of the spectral lines of a radioactive source, which are dominated instead by the statistical noise of the charge multiplication within the LGAD structure. The spectral lines' excess width is found to be proportional to the signal multiplication gain M s and increases with the energy of the photons. A minimum line width of 850 eV FWHM at 13.9 keV is measured at room temperature, τ = 2 μs and a gain M s = 10.2.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

28nm front end ASIC and 12” LGADs for 3D integration

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (≈10 μm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present the design and results from a 28 nm CMOS ASIC prototype, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. We also report on the co-design and characterization of reticle-scale LGAD sensors with 50 μm and 100 μm pixels and introduce the next 10k-pixel ASIC designed for full 3D integration. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗
DOE OSTI2025

AC-LGADs Fermilab front-end electronics characterization

Here, we characterized the front-end electronics used to process high-frequency signals from low-gain avalanche diodes (LGADs) at the Fermilab Test Beam Facility. LGADs are silicon detectors employed for charged particle tracking, offering exceptional spatial and temporal resolution. The purpose of this characterization was to understand how the time resolution is influenced by the front-end electronics. To achieve this, we developed a setup capable of generating input signals with varying amplitudes. The output results demonstrated that signal processing by the front-end electronics plays a crucial role in enhancing time resolution. We showed that the time resolution achieved by the FEE board is better than 2 p s at the 1 σ level.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Studying AC-LGAD strip sensors from laser and testbeam measurements

Here, this paper presents the setup assembled to characterize and measure the spatial and timing resolutions of AC-coupled Low Gain Avalanche Diodes (AC-LGADs), using a 1060 nm laser source to deposit initial charges with a defined calibration methodology. The results were compared to those obtained with a 120 GeV proton beam. Despite the differences in the charge deposition mechanism between the laser and proton beam, the spatial and temporal resolutions were found to be compatible between the two sources after calibration. With 4D tracking detectors expected to play a vital role in upcoming collider experiments, we foresee this work as a way to evaluate the performance of semiconductor sensors that can augment testbeam measurements and accelerate R&D efforts. Additionally, simulation studies using Silvaco TCAD and Weightfield2 were carried out to understand the various contributing factors to the total time resolution in AC-LGAD sensors, measured using the laser source.

FOS: Physical sciences↗
DOE OSTI2026

Two 28-nm front-end ASICs for ultra-fine spatial resolution and precision timing to be 3D integrated with 12 LGADs

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (about 10 µm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present two 28 nm CMOS ASIC prototypes, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗
DOE OSTI2026

Two 28-nm front-end ASICs for ultra-fine spatial resolution and precision timing to be 3D integrated with 12 LGADs

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (about 10 µm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present two 28 nm CMOS ASIC prototypes, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗
DOE OSTI2025

The ETROC2 as the Final Version for CMS Endcap Timing Layer (ETL) Upgrade

The ETROC (Endcap Timing Readout Chip) is being developed for the LGAD-based CMS Endcap Timing Layer (ETL) at HL-LHC. The ETL on each side of the interaction region will be instrumented with a two-disk system of MIP-sensitive LGAD (Low Gain Avalanche Diodes) silicon devices, read out by ETROCs for precision timing measurement with down to ~30 ps timing resolution per track. The ETROC is designed to handle a 16 x 16 pixel cell matrix, with each pixel being 1.3 mm x 1.3 mm to match the LGAD sensor pixel size. The front-end design for preamplifier and discriminator has been specifically optimized for the reduced LGAD signals, with enough flexibilities to meet the ETL specific needs for time resolution, power budget and radiation profile. The ETROC chip is implemented in a commercial 65nm CMOS process. Each channel consists of a preamplifier, a discriminator, a TDC used for TOA (Time Of Arrival) and TOT (Time Over Threshold) measurements, and a memory for data storage and readout. An in-pixel auto threshold calibration is included, along with a self-testing pattern generator. The TOT is used for time-walk correction of the TOA measurement. The detailed hit information (TOA and TOT) from each cell will be read out from a local circular buffer after each Level-1 Accept (about 1 MHz). In addition, a charge injection circuit is implemented to allow for testing and calibration. For more detailed monitoring of the signal pulses, waveform sampling circuits are included for one pixel. The clock distribution is based on a 16x16 H-tree design with a shielding structure to alleviate potential interference. The global peripheral circuits include a PLL, a phase shifter, an I2C slave controller, a fast control block, a global readout, and a data driver along with an efuse and temperature sensor. The ETROC builds event data frames for each L1A selected event and is also capable of providing L1 trigger information for user-defined delayed hits. The main design challenge is how to extract precision timing information from the small LGAD signals in the presence of high irradiation fluence, while keeping the power consumption and digital activity low. The ETL design goal for the time resolution of 50 ps per hit is required to achieve a 35 ps arrival time measurement for a MIP particle, which has its track registered in two ETL disk layers. The LGAD contribution is known to be about 30 ps, this means that the jitter from the ETROC has to be kept below 40 ps. The ETROC2 is the first full size full functionality prototype design fully compatible with the final chip specifications for CMS ETL and now becomes the final version. The ETROC2 chips have been extensively tested. We will present here new testing results including the bump bonding yield improvement study, the time walk correction (TWC) generality study with one pixel TWC applying to all pixels, the final SEU testing using both heavy ion and proton beam, more beam test studies including different sensors, and readiness for the ETROC2 production for CMS ETL upgrade.

Liu, Tiehui [Fermilab] (ORCID:0009000765225605)↗
DOE OSTI2025

Optimization and Performance Characterization of the Second Generation Fermilab Constant Fraction Discriminator Readout ASIC

We present the optimization and performance characterization of the second-generation Fermilab Constant Fraction Discriminator ASIC (FCFD), designed for the readout of AC-coupled low-gain avalanche detector (LGAD) strip-sensors. The FCFD is explicitly engineered to be insensitive to signal-amplitude variations, thereby removing the need for time-walk correction that is required in other LGAD time-stamping readout ASICs. This updated version, referred to as FCFD1.1, incorporates several enhancements over the first iteration to address key challenges in AC-coupled LGAD front-end design. We outline the primary readout-ASIC design considerations for these applications, describe the methodology used to evaluate critical sensor and system parameters, and summarize the additionally implemented features. Performance measurements using injected charge signals and minimum-ionizing particles in test-beams demonstrate a time resolution of approximately 40 ps and a position resolution of roughly \SI{15}{\micro\meter} when tested with beam particles uniformly over the active area of the sensor.

Apresyan, Artur [Fermilab] (ORCID:0000000261860130↗