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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Distribution of leakage currents in the cylindrical and conical sections of the magnetically insulated transmission line of the Angara-5-1 facility in experiments with wire arrays

Current leakages in the magnetically insulated transmission lines (MITL) impose restrictions on the transmission of electromagnetic pulses to the load in high-power electrophysical facilities. The multimodule Angara-5-1 facility with an output electric power of up to 6 TW is considered. In this work, the experimental and calculated profiles of leakage currents in two sections of the line are compared when the eight-module facility is loaded by a wire array. The azimuthal distribution of the current in the cylindrical section of the MITL is also considered.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Electrochemical mechanisms of leakage-current-enhanced delamination and corrosion in Si photovoltaic modules

This paper analyzes the mechanisms for corrosion and delamination observed in Si photovoltaic modules subjected to high temperature and humidity with a negative-ground bias testing. Based on the thermodynamic data, the ionic component of the leakage current causes reduction reactions of water on the cathodic metallization, producing hydrogen gas and hydroxide ions. Ag fingers are strong catalysts for this reduction reaction compared to other materials used in solar cells and can be the initiation sites of corrosion and delamination caused by the electrochemical reactions. The produced hydrogen gas accumulates inside the module potentially producing a high gas pressure that can promote delamination, which is often preferentially initiated on metallization where the adhesion strength is lower [1], [2], [3]. The local basicity near the metal surface increases due to the hydroxide ion generation. Thus, the environment inside the encapsulant can be alkaline despite the presence of acetic acid decomposition products from the encapsulant. Corrosion of materials such as Si used in solar cells occurs and the extent depends on their corrosion resistance to the alkaline solution. This suggests that corrosion and delamination are interactive and promote the formation and propagation of one another.

14 SOLAR ENERGY↗
DOE OSTI2015

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes [Detection and modeling of leakage current in AlGaN-based UV LEDs]

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the forward-bias IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. As a result, the circuit model is modified to account for another p-n junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the forward-bias IV characteristics of the leaky DUV-LED is achieved.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1979

Current leakage for low altitude satellites

Ionospheric plasma densities exceeding 1,000,000 per cu cm exist around satellites in low earth orbit. Operation of large solar arrays at high voltage may drive substantial leakage currents through this surrounding plasma. Power losses exceeding solar cell output have been observed for small arrays biased above +2,000 V. Estimates of these effects for very large power systems are developed. Recent large scale (10 meter) lab tests are reported. Estimates based on calculations of space charge limited sheath dimensions are identified as a good working model, leading to projected power losses for large arrays increasing much more slowly than for small arrays.

Mccoy, J. E.↗
DOE OSTI2017

Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are then used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.

42 ENGINEERING↗
DOE OSTI2014

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al{sub 0.7}Ga{sub 0.3}N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al{sub 0.7}Ga{sub 0.3}N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2010

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

Teverovsky, Alexander↗
DOE OSTI2018

Mathematical modeling of a proton-conducting solid oxide fuel cell with current leakage

Here, a framework of charge transports in proton-conducting solid oxide fuel cells (H-SOFCs) with considering current leakage is developed by assuming four electrode reactions. Current leakage happens when electron holes pass through the electrolyte and combine with electrons at the anode side. An analytical solution of leakage currents is proposed depending on the Nernst-Planck equation. On the basis of the analysis expression, a mathematical model of H-SOFCs is proposed, which can provide the information about current-voltage characteristics, leakage current density, Faraday and energy efficiencies. Moreover, H-SOFCs with the BaZr 0.8 Y 0.2 O 3 electrolyte are fabricated and tested, and the proposed model well reproduces the experimental data. The simulation results indicate that current leakage primarily affects the H-SOFC performance when the output voltage is close to the OCV. Both Faraday efficiencies and energy efficiencies decrease with increasing operating temperatures due to the existence of current leakage.

25 ENERGY STORAGE↗
NASA NTRS2016

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

testing↗
NASA NTRS2014

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

dielectric polarization↗
DOE OSTI2024

Field Study of Nighttime Leakage Currents in Bifacial PV Modules: Correlation with Atmospheric Electric Field Data

Leakage currents measured on PV modules in the field originate from a potential difference between the modules' frame and the cells. They can be a relative indicator of Potential-Induced Degradation (PID) severity, especially when comparing the same module design in a different environment. As modules are not operating at night, no leakage current should be observed but our team has reported several events of nighttime leakage currents on bifacial PV modules. These events have been firstly observed during a thunderstorm that are characterized by strong atmospheric electrical field values. This lead us to believe that nighttime leakage currents could originate from the atmospheric electric charges. In this paper, we correlate nighttime leakage currents measured on bifacial PV modules with field mill data to identify the origin of nighttime leakage currents. Our results show that so far, no leakage currents at night occur when the atmospheric electric field is between 0 and 150–200 V/m (standard value for fair weather). As soon as the atmospheric electric field is out of this range, leakage currents are observed with or without rain involved. This suggests a transport of charged particles from the atmosphere to the modules' frame. A combination of heavy rain with strong atmospheric electric field results into high nighttime leakage currents with a magnitude up to 8 times higher than what observed during the day with -1500V applied. This is explained by an easier transport of the charged particles through the water droplets. Based on these results, leakage currents observed during the day might not be only due to the inherent potential difference between the frame and the cells depending on the atmospheric electric field activity. We believe that it should be taken into account in PID studies.

14 SOLAR ENERGY↗
NASA NTRS1986

Leakage-current properties of encapsulants

A theoretical modeling of leakage current in ethylene vinyl acetate (EVA) and polyvinyl butyral (PVB) modules is being developed and is described. The modeling effort derives mathematical relationships for the bulk and surface conductivites of EVA and PVB, the surface conductivities of glass and polymeric films, and the EVA and PVB pottants, all as functions of environmental parameters. Results from the modeling indicate that for glass/EVA, the glass surface controls the interfacial conductivity, although EVA bulk conductivity controls total leakage current. For PVB/glass, the interface conductivity controls leakage currents for relative humidity (RH) less than 40 to 50%, but PVB bulk conductivity controls leakage current above 50% RH.

Wen, L. C.↗
DOE OSTI2015

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO{sub 2}/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO{sub 2}/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO{sub 2} films on the Si-face of 4H-SiC.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 10{sup 15} Ge cm{sup −2} and annealing between 1000 °C and 1100 °C introduced two broad electron levels E{sub C} − 0.38 eV and E{sub C} − 0.29 eV in n-type samples and a single broad hole trap E{sub V} + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicating that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p–n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Electrochemical Modeling of PID Leakage Current of PV Modules: Steady-State Current, Transient Current, and RC-Equivalent Circuit

Potential-induced degradation (PID) remains a significant reliability concern for photovoltaic (PV) modules, arising when a voltage difference between the module frame and the solar cells drives unintended leakage current through the glass-encapsulant stack. Although PID ultimately manifests as PID-s, PID-p, or PID-c, the underlying behavior of the leakage current-its magnitude and time dependence-requires clearer electrochemical interpretation. Traditional explanations attribute the initial transient current to bulk capacitive elements of the glass, encapsulant, and antireflection coatings, and the steady-state current according to their effective ohmic resistance. More recent studies, however, indicate that electrochemical charge-transfer processes at the encapsulant-metallization interface can play a dominant role in defining the leakage-current path. This paper develops a unified electrochemical framework for modeling PID leakage current. First, an RC-equivalent circuit is formulated by combining conventional RC elements with a Randles-type interface to capture transient leakage current through double-layer capacitance and faradaic processes at ionic-electronic boundaries. Second, the steady-state current-voltage behavior is explained using a linearized Butler-Volmer relationship, showing that the measured ohmic response corresponds to the low-overpotential limit of charge-transfer kinetics. Analytical results demonstrate that, for typical module materials-3.2-mm soda-lime glass and 0.45-mm encapsulant-the dominant modulators to PID leakage current are the glass surface resistance (under dry-surface conditions), the glass bulk capacitance, and the encapsulant resistance (under wet-surface conditions), with soda lime glass surface and EVA/POE encapsulant resistances primarily governing steady-state current. The proposed electrochemical model is validated against measured leakage-current data, showing good agreement in both the magnitude and the time-dependent evolution of PID leakage current.

14 SOLAR ENERGY↗