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Results for “LASER CRYSTAL”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar + ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Single-crystal silicon optical fiber by direct laser crystallization

Semiconductor core optical fibers with a silica cladding are of great interest in nonlinear photonics and optoelectronics applications. Laser crystallization has been recently demonstrated for crystallizing amorphous silicon fibers into crystalline form. Here we explore the underlying mechanism by which long single-crystal silicon fibers, which are novel platforms for silicon photonics, can be achieved by this process. Using finite element modeling, we construct a laser processing diagram that reveals a parameter space within which single crystals can be grown. Utilizing this diagram, we illustrate the creation of single-crystal silicon core fibers by laser crystallizing amorphous silicon deposited inside silica capillary fibers by high-pressure chemical vapor deposition. The single-crystal fibers, up to 5.1 mm long, have a very welldefined core/cladding interface and a chemically pure silicon core that leads to very low optical losses down to ~0.47-1dB/cm at the standard telecommunication wavelength (1550 nm). Furthermore, tt also exhibits a photosensitivity that is comparable to bulk silicon. Creating such laser processing diagrams can provide a general framework for developing single-crystal fibers in other materials of technological importance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Multicolor photonic crystal laser array

A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1995

Stress Tuning of Laser Crystals

The topic of stress tunable laser crystals is addressed in this study with the purpose of determining the piezo-optic coefficients of a new laser material. This data was collected using a quadruple pass birefringence technique because of its high degree of sensitivity relative to the other methods examined including fringe shift analysis using a Mach-Zender interferometer. A green He-Ne laser was passed through a light chopper and Glan-Thompson prism before entering a crystal of Erbium doped Yttrium Aluminum Garnet (Er:YAG) (used in order to validate the experimental technique). The Er:YAG crystal is mounted in a press mechanism and the laser is quadruple passed through test specimen before being returned through the prism and the orthogonally polarized portion of the beam measured with a optical sensor. At a later stage, the Er:YAG crystal was replaced with a new crystal in order to determine the piezo-optic coefficients of this uncharacterized material. The applied load was monitored with the use of a 50 lb. load cell placed in line with the press. Light transmission readings were taken using a lock-in amplifier while load cell measurements were taken with a voltmeter from a 5 volt, 0.5 amp power supply. Despite the fact that an effective crystal press damping system was developed, size limitations precluded the use of the complete system. For this reason, data points were taken only once per full turn so as to minimize the effect of non uniform load application on the collected data. Good correlation was found in the transmission data between the experimentally determined Er:YAG and the previously known peizo-optic constants of non-doped crystal with which it was compared. The variation which was found between the two could be accounted for by the aforementioned presence of Erbium in the experimental sample (for which exact empirical data was not known). The same test procedure was then carried out on a Yttrium Gallium Aluminum garnet (YGAG) for the purpose of establishing values of its unknown piezo-optic constant tensor using experimentally collected transmission data. Significant variation between the piezo-optic constants of YAG and YGAG crystals was found however, the excellent data correlation of separate experimental runs carried out on the YGAG sample demonstrates the validity of these results. The data collected during the stressing of the YGAG was of high quality, however the amount of data collected was somewhat limited by a fracture of YGAG specimen which undoubted altered the crystalline lattice structure and hence precluded any further testing.

Carty, Atherton A.↗
NASA NTRS2002

Low-threshold photonic crystal laser

We have fabricated photonic crystal nanocavity lasers, based on a new high-quality factor design that incorporates fractional edge dislocations.

photonic↗
DOE OSTI2014

Charge transfer of single laser crystallized intrinsic and phosphorus-doped Si-nanocrystals visualized by Kelvin probe force microscopy

Isolated intrinsic and phosphorus doped (P-doped) Si-nanocrystals (Si-NCs) on n- and p-Si substrates are fabricated by excimer laser crystallization techniques. The formation of Si-NCs is confirmed by atomic force microscopy (AFM) and conductive AFM measurements. Kelvin probe force microscopy (KPFM) is then carried out to visualize the trapped charges in a single Si-NC dot which derives from the charge transfer between Si-NCs and Si substrates due to their different Fermi levels. The laser crystallized P-doped Si-NCs have a similar Fermi level around the mid-gap to the intrinsic counterparts, which might be caused by the inactivated impurity atoms or the surface states-related Fermi level pinning. A clear rise of the Fermi level in P-doped Si-NCs is observed after a short time thermal annealing treatment, indicating the activation of dopants in Si-NCs. Moreover, the surface charge quantity can be estimated using a simple parallel plate capacitor model for a quantitative understanding of the KPFM results at the nanoscale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm{sup 2}/V s at a low carrier concentration of 7.9 × 10{sup +19} cm{sup −3}. This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1996

An Integrated Approach to Laser Crystal Development

Norfolk State University has developed an integrated research program in the area of laser crystal development, including crystal modeling, crystal growth, spectroscopy, and laser modeling. This research program supports a new graduate program in Chemical Physics, designed in part to address the shortage of minority scientists.

Ries, Heidi R.↗
DOE OSTI2022

High Throughput Data-Driven Design of Laser-Crystallized 2D MoS 2 Chemical Sensors: A Demonstration for NO 2 Detection

High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including the number of layers, lattice strain, carrier concentration, defect density, and grain structure. In this work, laser crystallization was used to locally pattern and transform hundreds of regions of amorphous MoS 2 thin films into 2D 2H-MoS 2 . Here a high throughput Raman spectroscopy approach was subsequently used to assess the process-dependent structural and compositional variations for each illuminated region, yielding over 6000 distinct nonresonant, resonant, and polarized Raman spectra. The rapid generation of a comprehensive library of structural and compositional data elucidated important trends between structure–property processing relationships involving laser-crystallized MoS 2 , including the relationships between grain size, grain orientation, and intrinsic strain. Moreover, extensive analysis of structure/property relationships allowed for intelligent design and evaluation of major contributions to device performance in MoS 2 chemical sensors. In particular, it is found that NO 2 sensor performance is strongly dependent on the orientation of the MoS 2 grains relative to the crystal plane.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1986

Nonradiative relaxation in tunable solid state laser crystals

The characteristics of nonradiative transitions between the 4T2 and 2E excited states of trivalent-chromium-ion-activated ruby (containing 0.04 percent Cr2O3 by weight) and alexandrite (containing 0.4 at. percent chromium ion) laser crystals were studied using the technique described by Gayen et al. (1985). In this technique, a 527-nm pulse excites the 4T2 band of the Cr(3+), and the subsequent population kinetics among excited states is monitored by an IR picosecond probe pulse as a function of pump-probe delay. In ruby, a resolution-limited sharp rise in the excited state population was followed by a long-lifetime decay, leading to an upper limit of 7 ps for the 4T2-state nonradiative lifetime. In alexandrite, a longer rise time was followed by a multicomponent decay. A theoretical model is proposed for explaining the induced absorption and the transition dynamics observed in these crystals.

Gayen, S. K.↗
NASA NTRS1989

Nonradiative relaxation and laser action in tunable solid state laser crystals

Room-temperature pulsed laser action was obtained in chromium-activated forsterite (Cr:Mg2SiO4) for both 532 and 1064 nm pumping. Free running laser emission in both cases is centered at 1235 nm and has a bandwidth of approximately 30 nm. Slope efficiency as high as 22 percent was measured. Using different sets of output mirrors and a single birefrigent plate as the intracavity wavelength selecting element tunability over the 1167 to 1268 nm spectral range was demonstrated. Continuous wave laser operation at room temperature was obtained for 1064 nm pumping from a CW Nd:YAG laser. The output power slope efficiency is 6.8 percent. The gain cross section is estimated to be 1.1 x 10 to the 19th sq cm. Spectroscopic studies suggest that the laser action is due to a center other than the trivalent chromium (Cr 3+), presumably the tetravalent chromium (Cr 4+) in a tetrahedrally coordinated site.

Petricevic, V.↗
DOE OSTI2015

Crystal structure of rhodopsin bound to arrestin by femtosecond X-ray laser

G-protein-coupled receptors (GPCRs) signal primarily through G proteins or arrestins. Arrestin binding to GPCRs blocks G protein interaction and redirects signalling to numerous G-protein-independent pathways. Here we report the crystal structure of a constitutively active form of human rhodopsin bound to a pre-activated form of the mouse visual arrestin, determined by serial femtosecond X-ray laser crystallography. Together with extensive biochemical and mutagenesis data, the structure reveals an overall architecture of the rhodopsin-arrestin assembly in which rhodopsin uses distinct structural elements, including transmembrane helix 7 and helix 8, to recruit arrestin. Correspondingly, arrestin adopts the pre-activated conformation, with a ~20° rotation between the amino and carboxy domains, which opens up a cleft in arrestin to accommodate a short helix formed by the second intracellular loop of rhodopsin. In conclusion, this structure provides a basis for understanding GPCR-mediated arrestin-biased signalling and demonstrates the power of X-ray lasers for advancing the frontiers of structural biology.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

900 nm longitudinal photonic band crystal (PBC) laser diodes with optimized epitaxial structure are fabricated. With a same calculated fundamental-mode divergence, stronger mode discrimination is achieved by a quasi-periodic index modulation in the PBC waveguide than a periodic one. Experiments show that the introduction of over 5.5 μm-thick PBC waveguide contributes to only 10% increment of the internal loss for the laser diodes. For broad area PBC lasers, output powers of 5.75 W under continuous wave test and over 10 W under quasi-continuous wave test are reported. The vertical divergence angles are 10.5° at full width at half maximum and 21.3° with 95% power content, in conformity with the simulated angles. Such device shows a prospect for high-power narrow-vertical-divergence laser emission from single diode laser and laser bar.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Increasing the deuterated potassium dihydrogen phosphate crystal laser resistance by an additional conditioning with nanosecond pulses

Laser conditioning with 355-nm sub-nanosecond laser light is a well-known procedure to increase the bulk laser-induced damage resistance of deuterated potassium dihydrogen phosphate (DKDP) crystals. In this study, we investigate a new process to further increase the bulk damage resistance of DKDP crystals by performing additional conditioning with a 6.7-ns 355-nm laser after first conditioning with a 500-ps 355-nm laser. Here, damage tests (using both small and large beams) show that the second nanosecond conditioning raster increased the fluence required to produce the same density (large beam test) and probability (small beam test) of bulk damage by ∼30%.

Crystals↗