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K(MoS)3 crystallizes in the hexagonal P6_3/m space group. The structure is three-dimensional. K is bonded in a trigonal planar geometry to three equivalent S atoms. All K–S bond lengths are 3.11 Å. Mo is bonded in a distorted see-saw-like geometry to four equivalent S atoms. There are a spread of Mo–S bond distances ranging from 2.49–2.60 Å. S is bonded in a 5-coordinate geometry to one K and four equivalent Mo atoms.
K(MoS)3 crystallizes in the hexagonal P6_3/m space group. The structure is three-dimensional. K is bonded in a 9-coordinate geometry to nine equivalent S atoms. There are six shorter (3.48 Å) and three longer (3.52 Å) K–S bond lengths. Mo is bonded in a distorted see-saw-like geometry to four equivalent S atoms. There are a spread of Mo–S bond distances ranging from 2.49–2.60 Å. S is bonded in a 7-coordinate geometry to three equivalent K and four equivalent Mo atoms.
Abstract Pure molybdenum disulfide (MoS 2 ) solid lubricant coatings could attain densities comparable to doped films (and the associated benefits to wear rate and environmental stability) through manipulation of the microstructure via deposition parameters. Unfortunately, pure films can exhibit highly variable microstructures and mechanical properties due to processes that are not controlled during deposition (i.e., batch-to-batch variation). This work focuses on developing a relationship between density, hardness, friction, and wear for pure sputtered MoS 2 coatings. Results show that dense films ( ρ = 4.5 g/cm 3 ) exhibit a 100 × lower wear rate compared to porous coatings ( ρ = 3.04–3.55 g/cm 3 ). The tribological performance of high density pure MoS 2 coatings is shown to surpass that of established composite coatings, achieving a wear rate 2 × ( k = 5.74 × 10 –8 mm 3 /Nm) lower than composite MoS 2 /Sb 2 O 3 /Au in inert environments.
The effect of the energy valley on interlayer charge transfer in transition metal dichalcogenide (TMD) heterostructures is studied by transient absorption spectroscopy and density functional theory. First-principles calculations confirm that the Λ min valley in the conduction band of few-layer WSe 2 evolves from above its K valley in the monolayer (1L) to below it in 4L. Heterostructure samples of nL–WSe 2 /1L–MoS 2 , where n = 1,2,3, and 4, are obtained by mechanical exfoliation and dry transfer. Photoluminescence spectroscopy reveals a thickness-dependent WSe 2 band structure and efficient interlayer charge transfer. Transient absorption measurements show that the electron transfer time from the Λ min valley of 4L WSe 2 to the K valley of MoS 2 is on the order of 30 ps. This process is much slower than the K-K charge transfer in 1L/1L TMD heterostructures. Furthermore, the momentum-indirect interlayer excitons formed after charge transfer have lifetimes >1 ns.
Atomically thin semiconductors such as monolayer MoS 2 and WS 2 exhibit nonlinear exciton–exciton annihilation at notably low excitation densities (below ~10 excitons/μm 2 in exfoliated MoS 2 ). In this work, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO 2 to Al 2 O 3 or SrTiO 3 , the rate constant for second-order exciton–exciton annihilation, k XX [cm 2 /s], is reduced by 1 or 2 orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in bis(trifluoromethane)sulfonimide-treated MoS 2 to be in the range D = 0.03–0.06 cm 2 /s, corresponding to a diffusion length of L D = 350 nm for an exciton lifetime of τ = 18 ns, which does not depend strongly on the substrate. We discuss possible mechanisms for the observed behavior, including substrate permittivity, long-range exciton–exciton or exciton–charge interactions, defect-mediated Auger recombination, and spatially inhomogeneous exciton populations arising from substrate-induced disorder. Exciton annihilation limits the overall efficiency of 2D semiconductor devices operating at high exciton densities; the ability to tune these interactions via the underlying substrate is an important step toward more efficient optoelectronic technologies featuring atomically thin materials.
Homogenous single-layer MoS 2 films coated with sub-single layer amounts of gold are found to isolate the reaction of methanol with carbon monoxide, the fundamental step toward higher alcohols, from an array of possible surface reactions. Active surfaces were prepared from homogenous single-layer MoS 2 films coated with sub-single layer amounts of gold. These gold atoms formed clusters on the MoS2 surface. A gas mixture of carbon monoxide (CO) and methanol (CH 3 OH) was partially converted to acetaldehyde (CH 3 CHO) under mild process conditions (308 kPa and 393 K). This carbonylation of methanol to a C 2 species is a critical step toward the formation of higher alcohols. Density functional theory modeling of critical steps of the catalytic process identify a viable reaction pathway. Imaging and spectroscopic methods revealed that the single layer of MoS 2 facilitated formation of nanoscale gold islands, which appear to sinter through Ostwald ripening. Here, the formation of acetaldehyde by the catalytic carbonylation of methanol over supported gold clusters is an important step toward realizing controlled production of useful molecules from low carbon-count precursors.
Phase engineering of nanomaterials (PEN) has demonstrated great potential in the fields of catalysis, electronics, energy storage and conversion, and condensed matter physics. Recently, transition metal dichalcogenides (TMDs) with unconventional metastable phases (e.g., 1T and 1T') have attracted increasing research interest due to their unique and appealing physicochemical properties. However, there is still a lack of a simple, universal, and controlled method for the preparation of large-scale and high-purity unconventional-phase TMD crystals, restricting their further fundamental study and practical applications. Here, a facile, one-step salt-assisted general strategy is reported for the controlled phase transformation of commercially available TMDs with conventional 2H phase, yielding a large amount of metastable 1T'-phase TMDs, including WS 2 , WSe 2 , MoS 2 , and MoSe 2 . It is found that the easily accessible metal salts, such as K 2 C 2 O 4 ·H 2 O, K 2 CO 3 , Na 2 CO 3 , Rb 2 CO 3 , Cs 2 CO 3 , KHCO 3 , NaHCO 3 , and NaC 2 O 4 , can be used to assist the 2H-to-1T' phase transformation, greatly simplifying the synthetic process for producing metastable 1T'-TMDs. Importantly, this method can also be used to prepare 1T'-TMD alloys, such as 1T'-WS 2x Se 2(1–x) . We report this newly developed strategy is robust and highly effective, which can also be used for the phase engineering of other materials with various polymorphs.
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The uranium-substituted thiomolybdate cluster, (Cp* 3 Mo 3 S 4 )UCp*, has been demonstrated as a model for water reduction by single uranium atoms supported on a molybdenum sulfide surface (U@MoS 2 ). In this study, the scope of O–H bond activation is expanded through the investigation of the reactivity of various alcohols with differing pKa values for the –OH proton. The reaction of (Cp* 3 Mo 3 S 4 )UCp* with stoichiometric amounts of methanol, phenol, 2,6-dichlorophenol, and nonafluoro-tert-butyl alcohol affords the corresponding mono-alkoxide species, (Cp* 3 Mo 3 S 4 )Cp*U(OR), via a uranium-metalloligand cooperative activation of the O–H bond. This observed reactivity is analogous to the O–H bond activation reported by (Cp* 3 Mo 3 S 4 )UCp* in the presence of water. However, addition of tert-butanol induces protonolysis of the Cp* ligand on uranium, resulting in the formation of a uranium tris-tert-butoxide cluster, (Cp* 3 Mo 3 S 4 )U(O t Bu) 3 . Independent synthesis of (Cp* 3 Mo 3 S 4 )Cp*U(O t Bu) was possible via an alternative pathway, eliminating sterics as a justification for the observed discrepancy in reactivity. Furthermore, these results offer insight into the role the –OH proton pKa plays in dictating the mechanism of O–H bond activation of alcohols by the uranium-substituted thiomolybdate cluster.
The surface-defect distributions of electron-irradiated n-type silicon have been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution, but not that of oxygen, and other capture centers' distributions. The vacancy diffusion length at 300 K was estimated to be about 3-6 microns.
Here we study the superconducting pairing instabilities and gap functions for prototypical two-dimensional (2D) transition-metal dichalcogenides (TMDCs) WS 2 , MoTe 2 , and MoS 2 in the 2H phase under both hole and electron doping at 10 K. Our first-principles quantum many-body Green's function approach allows us to treat the full d and p manifold of orbitals with strong spin-orbit coupling, yielding pairing predictions with material-specific detail. The resulting gap functions exhibit a variety of mixed-parity superconducting states, including s, p, d, f, d ± id, and p ± ip pairing modes. In particular, we predict 3% and 4% hole-doped WS 2 to be a chiral p ± ip topological superconductor. For 1% hole-doped MoS 2 , we find a competition between three doubly degenerate chiral and nonchiral instabilities. Overall, the relative pairing strengths are found to follow the Fermi-surface topology, due to nesting between the Fermi-surface sheets. Finally, we discuss our predictions in relation to available experimental data and classify the topology of the predicted superconducting pairing symmetries.
Organohalide perovskite with a variety of surface structures and morphologies have shown promising potential owing to the choice of the type of heterostructure dependent stability. We systematically investigate and discuss the impact of 2-dimensional molybdenum-disulphide (MoS 2 ), molybdenum-diselenide (MoSe 2 ), tungsten-disulphide (WS 2 ), tungsten-diselenide (WSe 2 ), boron-nitiride (BN) and graphene monolayers on bandgap and energy stability of organic–inorganic halide perovskites. We found that MAPbI 3 deposited on BN-ML shows room temperature stability (-25 meV ~ 300 K) with an optimal bandgap of ~ 1.68 eV. The calculated absorption coefficient also lies in the visible-light range with a maximum of 4.9 × 10 4 cm –1 achieved at 2.8 eV photon energy. Furthermore, on the basis of our calculations, we suggest that the encapsulation of an organic–inorganic halide perovskite monolayers by semiconducting monolayers potentially provides greater flexibility for tuning the energy stability and the bandgap.
Establishing ohmic contact to van der Waals semiconductors such as MoS 2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS 2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS 2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.
Abstract Printed 2D materials, derived from solution‐processed inks, offer scalable and cost‐effective routes to mechanically flexible optoelectronics. With micrometer‐scale control and broad processing latitude, aerosol‐jet printing (AJP) is of particular interest for all‐printed circuits and systems. Here, AJP is utilized to achieve ultrahigh‐responsivity photodetectors consisting of well‐aligned, percolating networks of semiconducting MoS 2 nanosheets and graphene electrodes on flexible polyimide substrates. Ultrathin (≈1.2 nm thick) and high‐aspect‐ratio (≈1 μm lateral size) MoS 2 nanosheets are obtained by electrochemical intercalation followed by megasonic atomization during AJP, which not only aerosolizes the inks but also further exfoliates the nanosheets. The incorporation of the high‐boiling‐point solvent terpineol into the MoS 2 ink is critical for achieving a highly aligned and flat thin‐film morphology following AJP as confirmed by grazing‐incidence wide‐angle X‐ray scattering and atomic force microscopy. Following AJP, curing is achieved with photonic annealing, which yields quasi‐ohmic contacts and photoactive channels with responsivities exceeding 10 3 A W −1 that outperform previously reported all‐printed visible‐light photodetectors by over three orders of magnitude. Megasonic exfoliation coupled with properly designed AJP ink formulations enables the superlative optoelectronic properties of ultrathin MoS 2 nanosheets to be preserved and exploited for the scalable additive manufacturing of mechanically flexible optoelectronics.
Electron–core hole interactions are critical for proper interpretation of core-level spectroscopies commonly used as analytical tools in materials science. Here we utilize resonant Auger-electron spectroscopy to uniquely identify exciton, shake, and charge-transfer processes that result from the sudden creation of the core hole in both x-ray-absorption and photoemission spectra. These effects are captured for the transition-metal compounds SrTiO 3 and MoS 2 by fully ab initio, combined real-time cumulant, and Bethe-Salpeter equation approaches to account for core hole dynamics and screening. Atomic charges and excited-state electron-density fluctuations reflect materials’ solid-state electronic structure, loss of translational symmetry around the core hole, and breakdown of the sudden approximation. They also demonstrate competition between long- and short-range screening in a solid.
The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.
Abstract The large tunability of band gaps and optical absorptions of armchair MoS 2 nanoribbons of different widths under bending is studied using density functional theory and many-body perturbation GW and Bethe–Salpeter equation approaches. We find that there are three critical bending curvatures, and the non-edge and edge band gaps generally show a non-monotonic trend with bending. The non-degenerate edge gap splits show an oscillating feature with ribbon width n , with a period $$\Delta n=3$$ Δ n = 3 , due to quantum confinement effects. The complex strain patterns on the bent nanoribbons control the varying features of band structures and band gaps that result in varying exciton formations and optical properties. The binding energy and the spin singlet–triplet split of the exciton forming the lowest absorption peak generally decrease with bending curvatures. The large tunability of optical properties of bent MoS 2 nanoribbons is promising and will find applications in tunable optoelectronic nanodevices.
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. In this work, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS 2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS 2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that (1) ultrathin oxidized Al dopes MoS 2 n-type (>2 × 1012 cm –2 ) without degrading its mobility, (2) Ag, Au, and Ni deposition causes varying levels of damage to MoS 2 (e.g. broadening Raman E' peak from <3 to >6 cm –1 ), and (3) Ti, Sc, and Y react with MoS 2 . Reactive metals must be avoided in contacts to monolayer MoS 2 , but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that (4) thin metals do not significantly strain MoS 2 , as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS 2 and broadly applicable to many other 2D semiconductors.