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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Overlap junctions for superconducting quantum electronics and amplifiers

Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap junction-based Josephson parametric amplifier that uses only two layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss, a gain of ∼30 dB, and quantum limited noise performance. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance.

Bal, Mustafa (ORCID:0000000307516774)↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
DOE OSTI2021

Safe Operations at Roadway Junctions - Design Principles from Automated Guideway Transit

Herein this paper describes a system-level view of a fully automated transit system comprising a fleet of automated vehicles (AVs) in driverless operation, each with an SAE level 4 Automated Driving System, along with its related safety infrastructure and other system equipment. This AV system-level control is compared to the automatic train control system used in automated guideway transit technology, particularly that of communications-based train control (CBTC). Drawing from the safety principles, analysis methods, and risk assessments of CBTC systems, comparable functional subsystem definitions are proposed for AV fleets in driverless operation. With the prospect of multiple AV fleets operating within a single automated mobility district, the criticality of protecting roadway junctions requires an approach like that of automated fixed-guideway transit systems, in which a guideway switch zone "interlocking" at each junction location deconflicts railway traffic, affirming safe passage. The analogous AV protection safety subsystem is defined as fail-safe equipment that monitors roadway intersections and junctions, communicates traffic signal status, perceives and communicates alerts and signals to AV connected vehicles concerning potential unsafe conditions, and performs related primary safety functions. Conclusions are drawn that the AV protection roadway intersection functions must be performed by local roadside equipment dedicated to protecting each roadway intersection and junction. Further, it is concluded that the communications technology connecting the infrastructure with the vehicle to perform this vital, fail-safe protection should meet specific functional and performance criteria.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Suppressed phase segregation for triple-junction perovskite solar cells

The tunable band gaps and facile fabrication of perovskites make them attractive for multi-junction photovoltaics. However, light-induced phase segregation limits their efficiency and stability: this occurs in wide band gap (> 1.65 eV) I/Br mixed perovskite absorbers, and becomes even more acute in the top cells of triple-junction solar photovoltaics that requires a fully 2.0 eV band gap absorber. We report herein that lattice distortion in I/Br mixed perovskites is correlated with the suppression of phase segregation, generating an increased ion migration energy barrier arising from the decreased average interatomic distance between A-site cation and iodide. Using a ~2.0 eV Rb/Cs mixed-cation inorganic perovskite with large lattice distortion in the top subcell, we fabricated all-perovskite triple-junction solar cells and achieved an efficiency of 24.3% (23.3% certified quasi-steady-state efficiency) with an open-circuit voltage of 3.21 V. This is, to our knowledge, the first reported certified efficiency for perovskite-based triple-junction solar cells. The triple-junction devices retain 80% of their initial efficiency following 420 hours of operation at the maximum power point.

14 SOLAR ENERGY↗
NASA NTRS1977

A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.

Lindholm, F. A.↗
NASA NTRS2006

Junction-to-Case Thermal Resistance of a Silicon Carbide Bipolar Junction Transistor Measured

Junction temperature of a prototype SiC-based bipolar junction transistor (BJT) was estimated by using the base-emitter voltage (V(sub BE)) characteristic for thermometry. The V(sub BE) was measured as a function of the base current (I(sub B)) at selected temperatures (T), all at a fixed collector current (I(sub C)) and under very low duty cycle pulse conditions. Under such conditions, the average temperature of the chip was taken to be the same as that of the temperature-controlled case. At increased duty cycle such as to substantially heat the chip, but same I(sub C) pulse height, the chip temperature was identified by matching the V(sub BE) to the thermometry curves. From the measured average power, the chip-to-case thermal resistance could be estimated, giving a reasonable value. A tentative explanation for an observed bunching with increasing temperature of the calibration curves may relate to an increasing dopant atom ionization. A first-cut analysis, however, does not support this.

Niedra, Janis M.↗
NASA NTRS1988

The mean flow structure around and within a turbulent junction or horseshoe vortex. II - The separated and junction vortex flow

Five-hole probe measurements of the flow through the separation region and in the vortex system of an incompressible subsonic flow around and within a turbulent junction or horseshoe vortex are reported. Mean velocity, static pressure, and total pressure results are presented. The streamwise vorticity field is obtained from the measured velocity field. Flow visualization results for the floor and cylinder surface agree well with the flow field data.

Pierce, F. J.↗
NASA NTRS2008

Magic-T Junction using Microstrip/Slotline Transitions

An improved broadband planar magic-T junction that incorporates microstrip/slotline transitions has been developed. In comparison with a prior broadband magic-T junction incorporating microstrip/slotline transitions, this junction offers superior broadband performance. In addition, because this junction is geometrically simpler and its performance is less affected by fabrication tolerances, the benefits of the improved design can be realized at lower fabrication cost. There are potential uses for junctions like this one in commercial microwave communication receivers, radar and polarimeter systems, and industrial microwave instrumentation. A magic-T junction is a four-port waveguide junction consisting of a combination of an H-type and an E-type junction. An E-type junction is so named because it includes a junction arm that extends from a main waveguide in the same direction as that of the electric (E) field in the waveguide. An H-type junction is so named because it includes a junction arm parallel to the magnetic (H) field in a main waveguide. A magic-T junction includes two input ports (here labeled 1 and 2, respectively) and two output ports (here labeled E and H, respectively). In an ideal case, (1) a magic-T junction is lossless, (2) the input signals add (that is, they combine in phase with each other) at port H, and (3) the input signals subtract (that is, they combine in opposite phase) at port E. The prior junction over which the present junction is an improvement affords in-phase-combining characterized by a broadband frequency response, and features a small slotline area to minimize in-band loss. However, with respect to isolation between ports 1 and 2 and return loss at port E, it exhibits narrowband frequency responses. In addition, its performance is sensitive to misalignment of microstrip and slotline components: this sensitivity is attributable to a limited number of quarter-wavelength (lambda/4) transmission-line sections for matching impedances among all four ports, and to strong parasitic couplings at the microstrip/slotline T junction, where four microstrip lines and a slotline are combined. The present improved broadband magic-T junction (see figure) includes a microstrip ring structure and two microstrip- to-slotline transitions. One of the microstrip/slotline transitions is a small T junction between the ring and a slotline; the other microstrip/slotline transition effects coupling between the slotline and port E. The smallness of the T junction and the use of minimum-size slotline terminations help to minimize radiation loss. An impedance-transformation network that includes multiple quarter-wavelength sections is used to increase the operating bandwidth and minimize the parasitic coupling around the microstrip/slotline T junction. As a result, the improved junction has greater bandwidth and lower phase imbalance at the sum and difference ports than did the prior junction.

U-yen, Kongpop↗