Components irradiation test no. 17 - Resistance thermometers at liquid hydrogen temperatures
Platinum and carbon resistance thermometer irradiation testing at liquid hydrogen temperatures
PLATINUM↗
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Liquid Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide
The success of exploratory missions in outer space often depends on a highly efficient renewable energy supply, as provided by solar cells. Since future missions will demand large aggregates of solar cells, and space flight is expensive, the solar cells must furthermore be available at low costs and have a long lifetime and high resistance against structural damage introduced by irradiation with high energy electrons and protons. The photovoltaic materials that are presently available only partly fulfill all these requirements. Therefore, we propose to explore a new method for fabricating thin-films for cost-efficient solar cells with very high specific power,high irradiation resistance and long lifetime based on the alpha-phase of the Cu-In-Se system "alpha-CIS."
Hepp, Aloysius F.↗
Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation
High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.
Weinberg, I.↗
Effect of 1.0 MeV electron irradiation on shunt resistance in Si-MINP solar cells
Shunt resistance from 100 K to 400 K is compared for diffused and ion implanted cells before and after irradiation. R sub sh decreases from greater than 10 to the 7th power omega-square cm for T less than 250 K to 10 to the 4th power omega-square cm at 400 K for non-irradiated diffused cells. Electron irradiation causes a more rapid decrease in R sub sh for T greater than 250 K. Ion implanted cells exhibit a similar trend except that R sub sh is significantly less for T less than 250 K and is more sensitive to irradiation at these low temperatures. The mechanism of R sub sh appears to be a combination of multistep tunneling and trapping - detrapping in the defect states of the semiconductor. Radiation serves to increase the density of these states to decrease R sub sh.
Anderson, Wayne A.↗
Resistivity measurements of neutron-irradiated pure metals and Al-Zn alloys
Report presents resistivity measurements and their interpretation for neutron-irradiated pure metals and Al-Zn alloys. The influence of temperature, the role of point defects, and the aging behavior on resistivity are considered. The experimental procedures and results are discussed in detail.
Horak, J. A.↗
Giant suppression of flux-flow resistivity in heavy-ion irradiated Tl2Ba2Ca2Cu3O10 films - Influence of linear defects on vortex transport
A large shift of the onset of flux-flow resistivity and the irreversibility line H(irr)(T) to higher temperatures is observed in Tl2Ba2Ca2Cu3O10 films containing linear defects created by Ag(+21) ion irradiation. The H(irr)(T), which has a characteristic L shape in highly anisotropic Tl and Bi based cuprates, becomes more like that of YBa2Cu3O7 in the presence of these defects. The Jc at 77 K also shows a large increase as a result of flux localization at the defects. The transport data indicate that in the H-T plane above H(irr)(T) of the unirradiated material, an ensemble of unoccupied defects is required for effective pinning of each flux line in the system.
Budhani, R. C.↗
N/P GaAs concentrator solar cells with an improved grid and bushbar contact design
The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency.
Desalvo, G. C.↗
Evaluation of Charge Storage and Decay in Spacecraft Insulators
Two reports discuss methods for evaluating the magnitude of electrostatic charging that occurs in spacecraft dielectric materials (in particular, polyimides) during prolonged exposure to radiation in outer space. The reports describe experiments on the electrical resistivities and charge-storage properties of polyimide specimens in a dark, evacuated environment, both before and after 5-megarad exposures to rays from cobalt-60. The experiments were designed to measure these properties not under standard conditions prescribed for testing dielectrics in air but, rather, under conditions approximating those in the intended spacecraft applications. The results of the experiments showed that the electrical resistivities of the insulations as determined under these conditions are greater, by a factor of roughly a thousand, than those determined under the standard conditions and that the gamma irradiation reduced resistivities marginally.
Frederickson, Arthur↗
A NEW RADIATION DAMAGE RESISTANT SOLAR CELL
Design and performance of an experimental silicon p-n junction cell which is resistant to radiation damage and intended for space application
RADIATION RESISTANCE↗
Progress in InP solar cell research
Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.
Weinberg, Irving↗
Progress in InP solar cell research
Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/P homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.
Weinberg, I.↗
Survival of spacecraft-associated microorganisms under simulated Martian UV irradiation
Spore-forming microbes recovered from spacecraft surfaces and assembly facilities were exposed to simulated Martian UV irradiation. The effects of UVA (315 to 400 nm), UVA_B (280 to 400 nm), and the full UV spectrum (200 to 400 nm) on the survival of microorganisms were studied at UV intensities expected to strike the surfaces of Mars. Microbial species isolated from the surfaces of several spacecraft, including Mars Odyssey, X-2000 (avionics), and the International Space Station, and their assembly facilities were identified using 16S rRNA gene sequencing. Forty-three Bacillus spore lines were screened, and 19 isolates showed resistance to UVC irradiation (200 to 280 nm) after exposure to 1,000 J m_2 of UVC irradiation at 254 nm using a low-pressure mercury lamp. Spores of Bacillus species isolated from spacecraft-associated surfaces were more resistant than a standard dosimetric strain, Bacillus subtilis 168. In addition, the exposure time required for UVA_B irradiation to reduce the viable spore numbers by 90% was 35-fold longer than the exposure time required for the full UV spectrum to do this, confirming that UVC is the primary biocidal bandwidth. Among the Bacillus species tested, spores of a Bacillus pumilus strain showed the greatest resistance to all three UV bandwidths, as well as the total spectrum. The resistance to simulated Mars UV irradiation was strain specific; B. pumilus SAFR-032 exhibited greater resistance than all other strains tested. The isolation of organisms like B. pumilus SAFR-032 and the greater survival of this organism (sixfold) than of the standard dosimetric strains should be considered when the anitation capabilities of UV irradiation are determined.
Venkateswaran, Kasthuri↗
Orientation dependence of the gage factor in electron-irradiated silicon
Crystal orientation dependence of thermal resistance and gage factor in electron irradiated n-type silicon strain gages
Gross, C.↗
Impedance characteristics of irradiated thin films Progress report no. 1, 1 Jun. - 1 Dec. 1965
Impedance characteristics of irradiated thin films - resistance drift and infrared measurements on bismuth thin films
IMPEDANCE MEASUREMENT↗
Postflight analyses of Bacillus thuringiensis organisms exposed to space flight conditions
Cultures of B. thuringiensis returned from space flight appeared to be normal to slightly affected adversely in their ability to produce three toxins that affect insects. In addition, it can be stated that B. thuringiensis spores are very resistant to ultraviolet irradiation at the individual wavelengths and energy levels previously described. Full sunlight, however, does have a detrimental effect on the viability of B. thuringiensis spores.
Wrenn, R. T.↗
Shallow-homojunction GaAs solar cells
Single-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.
Fan, J. C. C.↗
Development of biological and nonbiological explanations for the Viking label release data
The plausibility that hydrogen peroxide, widely distributed within the Mars surface material, was responsible for the evocative response obtained by the Viking Labeled Release (LR) experiment on Mars was investigated. Although a mixture of gamma Fe2O3 and silica sand stimulated the LR nutrient reaction with hydrogen peroxide and reduced the rate of hydrogen decomposition under various storage conditions, the Mars analog soil prepared by the Viking Inorganic Analysis Team to match the Mars analytical data does not cause such effects. Nor is adequate resistance to UV irradiation shown. On the basis of the results and consideration presented while the hydrogen peroxide theory remains the most, if not only, attractive chemical explanation of the LR data, it remains unconvincing on critical points. Until problems concerning the formation and stabilization of hydrogen peroxide on the surface of Mars can be overcome, adhere to the scientific evidence requires serious consideration of the biological theory.
Source record↗
The effect of process conditions on the performance of epitaxial InP solar cells
Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.
Borrego, J. M.↗