Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “InGa3”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

2 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materials Data on InGa3 by Materials Project

InGa3 crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. In is bonded to twelve Ga atoms to form a mixture of face and corner-sharing InGa12 cuboctahedra. There are six shorter (3.09 Å) and six longer (3.19 Å) In–Ga bond lengths. There are two inequivalent Ga sites. In the first Ga site, Ga is bonded in a 12-coordinate geometry to four equivalent In and eight Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.97–3.21 Å. In the second Ga site, Ga is bonded in a 12-coordinate geometry to four equivalent In and eight Ga atoms. Both Ga–Ga bond lengths are 3.12 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InGa3 by Materials Project

InGa3 is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. In is bonded to twelve equivalent Ga atoms to form InGa12 cuboctahedra that share corners with twelve equivalent InGa12 cuboctahedra, edges with twenty-four equivalent GaIn4Ga8 cuboctahedra, faces with six equivalent InGa12 cuboctahedra, and faces with twelve equivalent GaIn4Ga8 cuboctahedra. All In–Ga bond lengths are 3.10 Å. Ga is bonded to four equivalent In and eight equivalent Ga atoms to form GaIn4Ga8 cuboctahedra that share corners with twelve equivalent GaIn4Ga8 cuboctahedra, edges with eight equivalent InGa12 cuboctahedra, edges with sixteen equivalent GaIn4Ga8 cuboctahedra, faces with four equivalent InGa12 cuboctahedra, and faces with fourteen equivalent GaIn4Ga8 cuboctahedra. All Ga–Ga bond lengths are 3.10 Å.

36 MATERIALS SCIENCE↗