Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “In2Si2O7”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Materials Data on In2Si2O7 by Materials Project

In2Si2O7 crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. In3+ is bonded to eight O2- atoms to form distorted InO8 hexagonal bipyramids that share edges with six equivalent InO8 hexagonal bipyramids and edges with six equivalent SiO6 octahedra. There are two shorter (2.07 Å) and six longer (2.40 Å) In–O bond lengths. Si4+ is bonded to six equivalent O2- atoms to form SiO6 octahedra that share corners with six equivalent SiO6 octahedra and edges with six equivalent InO8 hexagonal bipyramids. The corner-sharing octahedral tilt angles are 44°. All Si–O bond lengths are 1.82 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a 4-coordinate geometry to two equivalent In3+ and two equivalent Si4+ atoms. In the second O2- site, O2- is bonded to four equivalent In3+ atoms to form corner-sharing OIn4 tetrahedra.

36 MATERIALS SCIENCE↗

Materials Data on In2Si2O7 by Materials Project

In2Si2O7 crystallizes in the monoclinic C2/m space group. The structure is three-dimensional. In3+ is bonded to six O2- atoms to form distorted InO6 pentagonal pyramids that share corners with six equivalent SiO4 tetrahedra and edges with three equivalent InO6 pentagonal pyramids. There are a spread of In–O bond distances ranging from 2.15–2.28 Å. Si4+ is bonded to four O2- atoms to form SiO4 tetrahedra that share corners with six equivalent InO6 pentagonal pyramids and a cornercorner with one SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.63–1.65 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a distorted trigonal planar geometry to two equivalent In3+ and one Si4+ atom. In the second O2- site, O2- is bonded in a linear geometry to two equivalent Si4+ atoms. In the third O2- site, O2- is bonded in a distorted trigonal planar geometry to two equivalent In3+ and one Si4+ atom.

36 MATERIALS SCIENCE↗