Photoactivated In2O3-GaN Gas Sensors for Monitoring NO2 with High Sensitivity and Ultralow Operating Power at Room Temperature
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Jafetra Rambeloson↗
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Transparent electrically conducting thin films for spacecraft temperature control applications
Thin transparent films of In2O3 or In2O3 + SnO2 prepared by evaporation or sputtering have been tested for use as surface layers for spacecraft temperature control coatings. The films are intended to prevent nonuniform electric charge buildup on the spacecraft exterior. Film thicknesses of 300 to 500 A were found to be optimal in terms of durability and minimum impact on the solar absorptance and the thermal emissivity of the underlayers. As a verification of their suitability for long-duration space missions, the films were subjected to simulated solar UV plus proton irradiation in a vacuum.
Hass, G.↗
Four space application material coatings on the long-duration exposure flight (LDEF)
Four material coatings of different thickness were flown on the LDEF to determine their ability to perform in the harsh space environment. The coatings, located in the ram direction of the spacecraft, were exposed for 10 months to the low-Earth orbit (LEO) environment experienced by the LDEF at an orbit of 260 nautical miles. They consisted of indium oxide (In2O3), silicon oxide (SiO(x)), clear RTV silicone, and silicone with silicate-treated zinc oxide (ZnO). These coatings were flown to assess their behavior when exposed to atomic oxygen and to confirm their good radiative properties, stability, electrical conductivity, and resistance to UV exposure. The flown samples were checked and compared with the reference unflown samples using high-magnification optical inspection, ESCA analysis, weight changes and dimensional changes. These comparisons indicated the following: The 1000 A SiO(x) coating eroded uniformly, with minor changes in its radiative properties. The 100 A of In2O3 coating eroded completely down to the Kapton backing, with resultant losses of reflectance. The RTV-615 showed erosion, with carbon (C) content losses, while the Si remained constant, with a doubling of the oxygen (O) concentration. The RTV-615 silicone with K2SiO3-treated ZnO changed from flat to glossy white in appearance. It lost C, was etched, and increased its O content. The upper layers showed no remaining Zn or K. Losses of reflectance occurred within certain wavelength bands. It was not possible to evaluate the experimental oxygen reaction rate using the calculated atomic oxygen fluence of 2.6 x 10(exp 20) atoms/cm(exp 2) for the exposure of these coatings during the flight. The bakeout of the coatings was not carried out prior to the flight. Hence, the coating weight and dimensional losses included losses by outgassing products.
Scialdone, John J.↗
Four space application material coatings on the Long-Duration Exposure Facility (LDEF)
Four material coatings of different thicknesses were flown on the LDEF to determine their ability to perform in the harsh space environment. The coatings, located in the ram direction of the spacecraft, were exposed for 10 months to the low-Earth orbit (LEO) environments experienced by the LDEF at an orbit of 260 nautical miles. They consisted of indium oxide (In2O3), silicon oxide (SiO(x)), clear RTV silicone, and silicone with silicate-treated zinc oxide (ZnO). These coatings were flown to assess their behavior when exposed to atomic oxygen and to confirm their good radiative properties, stability, electrical conductivity, and resistance to UV exposure. The flown samples were checked and compared with the reference unflown samples using high-magnification optical inspection, ESCA analysis, weight changes, and dimensional changes. These comparisons indicated the following. The 1000 A SiO(x) coating eroded uniformly, with minor changes in its radiative properties. The 100 A In2O3 coating eroded completely down to the Kapton backing, with resultant losses of reflectance. The RTV-615 showed erosion, with carbon (C) content losses, while the Si remained constant, with a doubling of the oxygen (O) concentration. The RTV-615 silicone with K2SiO3-treated ZnO changed from flat to glossy white in appearance. It lost C, was etched, and increased its O content. The upper layers showed no remaining Zn or K. Losses of reflectance occurred within certain wavelength bands. It was not possible to evaluate the experimental oxygen reaction rate using the calculated atomic oxygen fluence of 2.6 x 10(exp 20) atoms/cm(exp 2) for the exposure of these coatings during the flight. The bakeout of the coatings was not carried out prior to the flight. Hence, the coating weight and dimensional losses included losses by outgassing products.
Scialdone, John J.↗
X-ray Diffraction Studies of the Structure and Thermochemistry of Alkaline-Earth Oxide-Coated Thermionic Cathodes
NASA LeRC has a broad, active cathode technology development program in which both experimental and theoretical studies are being employed to further development of thermionic cathodes for use as electron sources in vacuum devices for communications and other space applications. One important type of thermionic cathode under development is the alkaline-earth oxide-coated (BaO, SrO, CaO) cathode. Significant improvements in the emission characteristics of this cathode have been obtained through modification of the chemical composition and morphology of the oxide coating, with the best result thus far coming from the addition of In2O3 and Sc2O3. Whereas the In2O3 produces a finer, more uniform particle structure, the exact chemical state and role of the Sc2O3 in the emission enhancement is unknown. The purpose of this cooperative agreement is to combine the studies of the surface chemistry and electron emission at NASA LeRC of chemically modified oxide coatings with a study of the thermochemistry and crystal structure using X-ray diffraction equipment and expertise at Clark Atlanta University (CAU). The study at CAU is intended to provide the description and understanding of the structure and thermochemistry needed for further improvement and optimization of the modified coatings. A description of the experimental procedure, preliminary X-ray diffraction test results, together with the design of an ultrahigh vacuum chamber necessary for high temperature thermochemistry studies will be presented.
Karikari, E. K.↗
Thermal Studies of New Precursors to Indium-tin Oxides for Use as Sensor Materials in the Detection of NO(x)
Control of combustion product emissions in both sub and super-sonic jet engines can be facilitated by measurement of NO(x) levels with metal oxide sensors, In2O3, metal-doped SnO2, and SnO, (as well as other materials) show resistivity changes in the presence of NO(x), but often their sensitivity, stability, and selectivity are low. This study was designed to develop new synthetic pathways to precursors that produce high purity, two phase In2O3-SnO2. The precursors were formed by complexation of tin with any oxide ligands to give the ammonium salt (NH4). Thermal studies of these precursors were carried out by thermal gravimetry (TG) and differential scanning calorimetry (DSC). Further studies by Fourier transform infrared spectroscopy (FTIR) and nuclear magnetic resonance spectroscopy (NMR) were also conducted.
Goldsby, J. C.↗
Photoelectron emission analysis of surface elements of the International Sun Earth Explorer
The photoemission was measured of engineering materials (aluminum; copper, plain; copper, abraded; copper-beryllium; magnesium; silver; In2O3 on silica; reflective coating on silica; teflon; kapton; and Pyre ML) associated with the International Sun Earth Explorer (ISEE) Satellite. The procedures used are described, including the experimental equipment; results of the program, the conclusions reached, and areas for further work are presented. Data regarding the measured yield of the 11 materials whose surface emission was determined is included in the form of plots of photoelectric yield versus incident light wavelength.
Spencer, W. T.↗
Glass-Si heterojunction solar cells
An increase in efficiency from 2% to over 7% was achieved by a solar cell that used polycrystal silicon heterojunction with SnO2 glass. For Single crystal substrates, efficiencies close to 10% were measured. These cells had the same structures as polycrystalline cells. Work on p+/n heterojunction using In2O3 glass resulted in cells of 3% efficiency on polycrystalline material and 4% efficiency on single crystal material.
Ahrons, R. W.↗
Fabrication of OSOS cells by neutral ion beam sputtering
Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.
Burk, D. E.↗
Transparent conductive coatings
Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.
Ashok, S.↗
Photoenhanced thermal oxidation of InP
The growth rate of laser-photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied using secondary electron microscopy and X-ray photoemission spectroscopy, respectively. The oxide layers contain In2O3 and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photon-enhanced surface reaction.
Fathipour, M.↗
Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide
While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.
Gessert, T. A.↗
Recent advances in the ITO/InP solar cell
It was demonstrated that Indium Tin Oxide (ITO)/InP solar cells can now be made on as-received p(-) bulk substrates which are of nearly equal quality to those which could previously only be made on epitaxially grown p(-) InP base layers. Although this advancement is due in part to both increases in substrate quality and a better understanding of back contact formation, it appears that the passivation/compensation effects resulting from having H2 in the sputtering gas tends to reduce significantly the performance differences previously observed between these two substrates. It is shown that since high efficiency ITO/InP cells can be made from as-received substrates, and since the type conversion process is not highly spatially dependent, large area ITO/InP cells (4 sq cm) with efficiencies approaching 17 percent (Global) can be made. Furthermore, the measured open circuit voltages (V sub OC) and quantum efficiencies (QEs) from these large cells suggest that, when they are processed using optimum grid designs, the efficiencies will be nearly equal to that of the smaller cells thus far produced. It has been shown, through comparative experiments involving ITO/InP and IO/InP cells, that Sn may not be the major cause of type conversion of the InP surface and thus further implies that the ITO may not be an essential element in this type of device. Specifically, very efficient photovoltaic solar cells were made by sputtering (Sn free) In2O3 showing that type conversion and subsequent junction formation will occur even in the absence of the sputtered SN species. The result suggests that sputter damage may indeed be the important mechanism(s) of type conversion. Finally, an initial study of the stability of the ITO/InP cell done over the course of about one year has indicated that the J(sub SC) (short circuit current) and the fill factor (FF) are measurably stable within experimental certainty.
Gessert, T. A.↗
Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication
Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data.
Faur, Maria↗
Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing
Although it is apparent that direct current (DC) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single-crystal p-type InP, the actual mechanism of type conversion of the InP surface is not clear. Since sputter deposition of In2O3 has also led to high-quality cells, it appears that Sn is not the cause of type conversion. To investigate the junction formation process further, experiments involving the use of a pure hydrogen plasma have been performed, resulting in type conversion of Fe-doped InP surfaces and in solar cells with efficiencies over 16 percent (global). The results confirm that sputter deposition is not necessary to form this type of buried homojunction solar cell, and they suggest a fabrication process that may be used with other relevant photovoltaic materials.
Gessert, T. A.↗
Post-flight analyses of the crystals from the M0003-14 quartz crystal microbalance experiment
Quartz Crystal Microbalances constructed by QCM Research were flown on the leading and trailing edges of the Long Duration Exposure Facility (LDEF) as one of the sub-experiments of M0003. Response of the crystals coated with 150 A of IN2O3ZnS was recorded during the first 424 days of the mission. A second QCM with crystals coated with 150 A was also flown but not monitored. The flight data and temperature profiles will be presented. After the flight, the QCM's were disassembled and analyzed. The samples included the crystals from the leading and trailing edge samples of both types of coatings along with the reference crystals which were inside the QCM housing. Analyses were performed by scanning electron microscopy, energy dispersive x ray analysis, x ray photoelectron spectroscopy, ion microprobe mass analysis, and reflectance spectroscopy in the infrared and ultraviolet/visible region. The crystals were contaminated predominantly with silicone compounds. The contamination is higher on the leading edge than on the trailing edge, and higher on the exposed crystal than on the reference crystals. No significant differences in composition of the In2O3 crystals were noted. Differences in the reflectance and surface analysis of the Zns crystals will be discussed.
Stuckey, W. K.↗
Post-flight analyses of the crystals from the M0003-14 quartz crystal microbalance experiment
Quartz Crystal Microbalances constructed by QCM Research were flown on the leading and trailing edges of LDEF as one of the sub-experiments of M0003. Response of the crystals coated with 150 A of In2O3 was recorded during the first 424 days of the mission. A second QCM with crystals coated with 150 A of ZnS was also flown but not monitored. After the flight, the QCM's were disassembled and analyzed in The Aerospace Corporation laboratories. The samples included the crystals from the leading and trailing edge samples of both types of coatings along with the reference crystals, which were inside the QCM housing. Analyses were performed by scanning electron microscopy, energy dispersive x-ray analyses, x-ray photoelectron spectroscopy, ion microprobe mass analysis, and reflectance spectroscopy in the infrared and UV/visible regions. The crystals are contaminated predominantly with silicone compounds. The contamination is higher on the leading edge than on the trailing edge and higher on the exposed crystals than on the reference crystals.
Stuckey, W. K.↗
Synthesis and decomposition of a novel carboxylate precursor to indium oxide
Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.
Hepp, Aloysius F.↗