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Wafer-scale growth of two-dimensional, phase-pure InSe

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as an ultrathin III–VI semiconductor with a combination of favorable attributes that are comparable to those of III–V semiconductors and van der Waals 2D transition-metal dichalcogenides. Nevertheless, there has been no demonstration of large-area synthesis of 2D InSe due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical vapor deposition (MOCVD) over 2-in wafers. We achieve polymorph-selective epitaxial growth of InSe on c-plane sapphire via flow modulation to control the Se/In ratio. The layer-by-layer growth allows thickness control with tunable optical properties comparable to those of bulk crystals. We also demonstrate gate-tunable electrical transport with a field-effect mobility comparable to that of single-crystalline flakes. Importantly, these results indicate that InSe grown by MOCVD could be an effective channel material for back-end-of-line integration in logic transistors.

2D materials↗

Materials Data on In2Se3 by Materials Project

In2Se3 crystallizes in the trigonal R3m space group. The structure is two-dimensional and consists of three In2Se3 sheets oriented in the (0, 0, 1) direction. there are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to four Se2- atoms to form distorted corner-sharing InSe4 tetrahedra. There are one shorter (2.49 Å) and three longer (2.76 Å) In–Se bond lengths. In the second In3+ site, In3+ is bonded in a 6-coordinate geometry to six Se2- atoms. There are three shorter (2.70 Å) and three longer (3.42 Å) In–Se bond lengths. There are three inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a single-bond geometry to one In3+ atom. In the second Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to three equivalent In3+ atoms. In the third Se2- site, Se2- is bonded in a 6-coordinate geometry to six In3+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on In4Se3 by Materials Project

In4Se3 crystallizes in the orthorhombic Pnnm space group. The structure is two-dimensional and consists of two In4Se3 sheets oriented in the (0, 1, 0) direction. there are four inequivalent In+1.50+ sites. In the first In+1.50+ site, In+1.50+ is bonded to five Se2- atoms to form distorted edge-sharing InSe5 square pyramids. There are a spread of In–Se bond distances ranging from 3.01–3.47 Å. In the second In+1.50+ site, In+1.50+ is bonded in a trigonal non-coplanar geometry to three Se2- atoms. There are two shorter (2.68 Å) and one longer (2.75 Å) In–Se bond lengths. In the third In+1.50+ site, In+1.50+ is bonded in an L-shaped geometry to two equivalent Se2- atoms. Both In–Se bond lengths are 2.84 Å. In the fourth In+1.50+ site, In+1.50+ is bonded in a trigonal non-coplanar geometry to three Se2- atoms. There are one shorter (2.69 Å) and two longer (2.74 Å) In–Se bond lengths. There are three inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a 3-coordinate geometry to three In+1.50+ atoms. In the second Se2- site, Se2- is bonded in a 5-coordinate geometry to five In+1.50+ atoms. In the third Se2- site, Se2- is bonded in a 3-coordinate geometry to five In+1.50+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on InSe by Materials Project

InSe is black P-derived structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is two-dimensional and consists of four InSe sheets oriented in the (0, 0, 1) direction. In2+ is bonded in a distorted trigonal non-coplanar geometry to three equivalent Se2- atoms. All In–Se bond lengths are 2.68 Å. Se2- is bonded in a distorted trigonal non-coplanar geometry to three equivalent In2+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on In2Se3 by Materials Project

In2Se3 is trigonal omega-like structured and crystallizes in the trigonal R-3m space group. The structure is two-dimensional and consists of three In2Se3 sheets oriented in the (0, 0, 1) direction. In3+ is bonded in a distorted T-shaped geometry to three equivalent Se2- atoms. All In–Se bond lengths are 2.85 Å. There are two inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to six equivalent Se2- atoms to form edge-sharing SeSe6 octahedra. All Se–Se bond lengths are 2.92 Å. In the second Se2- site, Se2- is bonded to three equivalent In3+ and three equivalent Se2- atoms to form a mixture of distorted edge and corner-sharing SeIn3Se3 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗

Materials Data on InSe by Materials Project

InSe crystallizes in the monoclinic C2/m space group. The structure is one-dimensional and consists of two InSe ribbons oriented in the (0, 1, 0) direction. In2+ is bonded in a distorted T-shaped geometry to three equivalent Se2- atoms. There are two shorter (2.71 Å) and one longer (2.72 Å) In–Se bond lengths. Se2- is bonded in a 3-coordinate geometry to three equivalent In2+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on InSe by Materials Project

InSe is black P-derived structured and crystallizes in the trigonal R3m space group. The structure is two-dimensional and consists of six InSe sheets oriented in the (0, 0, 1) direction. In2+ is bonded in a distorted trigonal non-coplanar geometry to three equivalent Se2- atoms. All In–Se bond lengths are 2.68 Å. Se2- is bonded in a distorted trigonal non-coplanar geometry to three equivalent In2+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on In6Se7 by Materials Project

In6Se7 crystallizes in the monoclinic P2_1 space group. The structure is three-dimensional. there are six inequivalent In+2.33+ sites. In the first In+2.33+ site, In+2.33+ is bonded in a 7-coordinate geometry to seven Se2- atoms. There are a spread of In–Se bond distances ranging from 3.19–3.49 Å. In the second In+2.33+ site, In+2.33+ is bonded to six Se2- atoms to form a mixture of edge and corner-sharing InSe6 octahedra. The corner-sharing octahedra tilt angles range from 2–3°. There are a spread of In–Se bond distances ranging from 2.70–2.97 Å. In the third In+2.33+ site, In+2.33+ is bonded to six Se2- atoms to form a mixture of edge and corner-sharing InSe6 octahedra. The corner-sharing octahedra tilt angles range from 2–3°. There are a spread of In–Se bond distances ranging from 2.72–3.01 Å. In the fourth In+2.33+ site, In+2.33+ is bonded to six Se2- atoms to form edge-sharing InSe6 octahedra. There are a spread of In–Se bond distances ranging from 2.77–2.86 Å. In the fifth In+2.33+ site, In+2.33+ is bonded in a 3-coordinate geometry to three Se2- atoms. There are a spread of In–Se bond distances ranging from 2.68–2.75 Å. In the sixth In+2.33+ site, In+2.33+ is bonded in a distorted T-shaped geometry to three Se2- atoms. There are a spread of In–Se bond distances ranging from 2.71–2.78 Å. There are seven inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a 3-coordinate geometry to five In+2.33+ atoms. In the second Se2- site, Se2- is bonded to five In+2.33+ atoms to form a mixture of distorted edge and corner-sharing SeIn5 square pyramids. In the third Se2- site, Se2- is bonded to five In+2.33+ atoms to form a mixture of distorted edge and corner-sharing SeIn5 trigonal bipyramids. In the fourth Se2- site, Se2- is bonded in a distorted rectangular see-saw-like geometry to five In+2.33+ atoms. In the fifth Se2- site, Se2- is bonded in a distorted T-shaped geometry to three In+2.33+ atoms. In the sixth Se2- site, Se2- is bonded in a 3-coordinate geometry to three In+2.33+ atoms. In the seventh Se2- site, Se2- is bonded to five In+2.33+ atoms to form a mixture of edge and corner-sharing SeIn5 square pyramids.

36 MATERIALS SCIENCE↗

Materials Data on In2Se3 by Materials Project

In2Se3 crystallizes in the hexagonal P6_1 space group. The structure is three-dimensional. there are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to four Se2- atoms to form InSe4 tetrahedra that share corners with two equivalent InSe4 tetrahedra, corners with four equivalent InSe5 trigonal bipyramids, and an edgeedge with one InSe5 trigonal bipyramid. There are a spread of In–Se bond distances ranging from 2.60–2.68 Å. In the second In3+ site, In3+ is bonded to five Se2- atoms to form InSe5 trigonal bipyramids that share corners with four equivalent InSe4 tetrahedra, an edgeedge with one InSe4 tetrahedra, and edges with two equivalent InSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.64–2.97 Å. There are three inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to three In3+ atoms. In the second Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to three In3+ atoms. In the third Se2- site, Se2- is bonded in a 3-coordinate geometry to three In3+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on In2Se by Materials Project

In2Se crystallizes in the orthorhombic Pnnm space group. The structure is three-dimensional. there are four inequivalent In1+ sites. In the first In1+ site, In1+ is bonded in an L-shaped geometry to two equivalent Se2- atoms. Both In–Se bond lengths are 2.97 Å. In the second In1+ site, In1+ is bonded in a distorted T-shaped geometry to three Se2- atoms. There are one shorter (2.81 Å) and two longer (2.99 Å) In–Se bond lengths. In the third In1+ site, In1+ is bonded in a distorted T-shaped geometry to three Se2- atoms. There are one shorter (2.83 Å) and two longer (2.88 Å) In–Se bond lengths. In the fourth In1+ site, In1+ is bonded in a T-shaped geometry to three Se2- atoms. There are a spread of In–Se bond distances ranging from 2.90–3.05 Å. There are two inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to six In1+ atoms to form SeIn6 octahedra that share corners with two equivalent SeIn5 trigonal bipyramids, edges with two equivalent SeIn6 octahedra, and edges with two equivalent SeIn5 trigonal bipyramids. In the second Se2- site, Se2- is bonded to five In1+ atoms to form SeIn5 trigonal bipyramids that share corners with two equivalent SeIn6 octahedra, corners with two equivalent SeIn5 trigonal bipyramids, edges with two equivalent SeIn6 octahedra, and an edgeedge with one SeIn5 trigonal bipyramid. The corner-sharing octahedra tilt angles range from 14–74°.

36 MATERIALS SCIENCE↗

Materials Data on In2Se3 by Materials Project

In2Se3 crystallizes in the hexagonal P6_5 space group. The structure is three-dimensional. there are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded in a 3-coordinate geometry to three Se2- atoms. There are a spread of In–Se bond distances ranging from 2.95–3.25 Å. In the second In3+ site, In3+ is bonded in a 4-coordinate geometry to four Se2- atoms. There are a spread of In–Se bond distances ranging from 2.51–2.96 Å. There are three inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to three In3+ atoms. In the second Se2- site, Se2- is bonded in a 1-coordinate geometry to one In3+ and one Se2- atom. The Se–Se bond length is 2.44 Å. In the third Se2- site, Se2- is bonded in a 4-coordinate geometry to three In3+ and one Se2- atom.

36 MATERIALS SCIENCE↗

Materials Data on In2Se3 by Materials Project

In2Se3 crystallizes in the trigonal P-3m1 space group. The structure is two-dimensional and consists of one In2Se3 sheet oriented in the (0, 0, 1) direction. In3+ is bonded to six Se2- atoms to form a mixture of edge and corner-sharing InSe6 octahedra. The corner-sharing octahedral tilt angles are 0°. There are three shorter (2.68 Å) and three longer (2.99 Å) In–Se bond lengths. There are two inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to six equivalent In3+ atoms to form edge-sharing SeIn6 octahedra. In the second Se2- site, Se2- is bonded in a 3-coordinate geometry to three equivalent In3+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on In3Se by Materials Project

In3Se is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. In is bonded to eight equivalent In and four equivalent Se atoms to form distorted InIn8Se4 cuboctahedra that share corners with twelve equivalent InIn8Se4 cuboctahedra, edges with eight equivalent SeIn12 cuboctahedra, edges with sixteen equivalent InIn8Se4 cuboctahedra, faces with four equivalent SeIn12 cuboctahedra, and faces with fourteen equivalent InIn8Se4 cuboctahedra. All In–In bond lengths are 3.40 Å. All In–Se bond lengths are 3.40 Å. Se is bonded to twelve equivalent In atoms to form distorted SeIn12 cuboctahedra that share corners with twelve equivalent SeIn12 cuboctahedra, edges with twenty-four equivalent InIn8Se4 cuboctahedra, faces with six equivalent SeIn12 cuboctahedra, and faces with twelve equivalent InIn8Se4 cuboctahedra.

36 MATERIALS SCIENCE↗

Materials Data on InSe by Materials Project

InSe is black P-derived structured and crystallizes in the hexagonal P-6m2 space group. The structure is two-dimensional and consists of four InSe sheets oriented in the (0, 0, 1) direction. In2+ is bonded in a distorted trigonal non-coplanar geometry to three equivalent Se2- atoms. All In–Se bond lengths are 2.68 Å. Se2- is bonded in a distorted trigonal non-coplanar geometry to three equivalent In2+ atoms.

36 MATERIALS SCIENCE↗