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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Specifications and pre-production of n + -in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider

Abstract The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n + -strips, so-called n + -in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 × 9.8 cm 2 , geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.

Instruments & Instrumentation↗
DOE OSTI2021

Initial tests of large format sensors for the ATLAS ITk strip tracker

For the construction of the Inner Tracker (ITk) as part of the phase-II upgrade programme of the ATLAS detector for the High-Luminosity (HL) LHC, batches of Long Strip (LS) and Short Strip (SS) n + -in-p type micro-strip sensors have been produced by Hamamatsu Photonics and Infineon. The full size sensors measure approximately 98 × 98 mm 2 and are designed and engineered for tolerance against the 9.7 × 10 14 1 MeV n eq /cm 2 fluence expected at the HL-LHC, including a safety factor of 1.5. Each sensor has 2 or 4 columns of 1280 individual channels arranged at 75.5 μ m horizontal pitch. To ensure the sensors comply with their specifications, a Quality Control (QC) procedure has been implemented, comprising measurements on every individual sensor as well as on a sample basis. Every sensor is subjected to an initial visual inspection, after which the full surface of the sensor is captured with very high resolution by an automated camera setup. Non-contact metrology is performed to obtain the sensor surface profile. Electrical measurements establishing the reverse bias leakage current and depletion voltage are then conducted automatically. Sample sensors from every batch are subjected to 40 h of leakage stability checks in controlled atmosphere, and tests on every channel measuring leakage current, coupling capacitance and bias resistance are done. The recorded results are uploaded to a production database following data quality checks. In this paper, QC test validation data and the compiled results for the first batches of production grade sensors are presented. The QC protocol was validated, and the first production sensors were confirmed to be within specification. The results are compared to those from the previous generation of prototype sensors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Intermetallic Single-Atom Alloy In–Pd Bimetallene for Neutral Electrosynthesis of Ammonia from Nitrate

Harvesting recyclable ammonia (NH 3 ) from the electrocatalytic reduction of nitrate (NO 3 RR) offers a sustainable strategy to close the ecological nitrogen cycle from nitration contamination in an energy-efficient and environmentally friendly manner. The emerging intermetallic single-atom alloys (ISAAs) are recognized to achieve the highest site density of single atoms by isolating contiguous metalatoms into single sites stabilized by another metal within the intermetallic structure, which holds promise to couple the catalytic benefits from intermetallic nanocrystals and single-atom catalysts for promoting NO 3 RR. Herein, ISAA In-Pd bimetallene, in which the Pd single atoms are isolated by surrounding In atoms, is reported to boost neutral NO 3 RR with a NH 3 Faradaic efficiency(FE) of 87.2%, a yield rate of 28.06 mg h -1 mg Pd -1 , and an exceptional electrocatalytic stability with increased activity/selectivity over 100 h and 20 cycles. The ISAA structure induces substantially diminished overlap of Pdd-orbitals and narrowed p-d hybridization of In-p and Pd-d states around the Fermi level, resulting in a stronger NO 3 - adsorption and a depressed energy barrier of the potential-determining step for NO 3 RR. Finally, further integrating the NO 3 RR catalyst into a Zn-NO 3 - flow battery as the cathode delivers a power density of 12.64 mW cm -2 and a FE of 93.4% for NH 3 production.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

ATLAS ITk strip sensor quality control procedures and testing site qualification

Abstract The high-luminosity upgrade of the Large Hadron Collider, scheduled to become operational in 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker. Radiation hard n + -in-p micro-strip silicon sensors were developed by the ATLAS Inner Tracker strip collaboration and are produced by Hamamatsu Photonics K.K. Production of the total amount of 22000 strip sensors has started in 2020 and will continue until 2025. The ATLAS strip sensor collaboration has the responsibility to monitor the quality of the fabricated devices by performing detailed measurements of individual sensor characteristics and by comparing the obtained results with the tests done by the manufacturer. Dedicated Quality Control procedures were developed to check whether the delivered large-format sensors adhere to the ATLAS specifications. The institutes performing the Quality Control testing of the pre-production and production ATLAS ITk strip sensors had to initially be qualified for multiple high-throughput tests by successfully completing the Site Qualification process. The Quality Control procedures and the qualification process are described in this paper.

Instruments & Instrumentation↗
DOE OSTI2020

Materials Data on InP3 by Materials Project

InP3 is Ilmenite-derived structured and crystallizes in the trigonal R-3m space group. The structure is three-dimensional. In1+ is bonded to six equivalent P+0.33- atoms to form distorted InP6 pentagonal pyramids that share corners with six equivalent InP6 pentagonal pyramids, corners with six equivalent PIn2P2 trigonal pyramids, and edges with three equivalent PIn2P2 trigonal pyramids. There are three shorter (2.67 Å) and three longer (2.96 Å) In–P bond lengths. P+0.33- is bonded to two equivalent In1+ and two equivalent P+0.33- atoms to form distorted PIn2P2 trigonal pyramids that share corners with two equivalent InP6 pentagonal pyramids, corners with eight equivalent PIn2P2 trigonal pyramids, an edgeedge with one InP6 pentagonal pyramid, and edges with two equivalent PIn2P2 trigonal pyramids. Both P–P bond lengths are 2.22 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InP by Materials Project

InP is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. In3+ is bonded to four equivalent P3- atoms to form corner-sharing InP4 tetrahedra. All In–P bond lengths are 2.58 Å. P3- is bonded to four equivalent In3+ atoms to form corner-sharing PIn4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InP by Materials Project

InP is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. In3+ is bonded to six equivalent P3- atoms to form a mixture of edge and corner-sharing InP6 octahedra. The corner-sharing octahedral tilt angles are 0°. All In–P bond lengths are 2.77 Å. P3- is bonded to six equivalent In3+ atoms to form a mixture of edge and corner-sharing PIn6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗