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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Effects of Lateral Plasma Density and Temperature Diffusion on VCSEL Performance

The hydrodynamic model is further verified by applying to a gain-guided single mode VCSEL. DC effects of D(sub NN): (1) increase threshold current J(sub th) and decrease slope efficiency; (2) within the studied range (50% pumping within threshold and realistic diffusion coefficient for a single mode), the L-I relation scales with the relative Injection current (J/J(sub th) - 1). AC effects of D(sub NN): (1) decrease spectral bandwidth and responsivity of direct-current modulation; (2) within the studied range, the frequency response follows the same formal dependence as predicted without diffusion and under a linear gain model, while the resonant frequency position similarly scales with the relative injection current; (3) therefore, it is concluded that the AC effects of D(sub NN) is purely of static nature and reflected via its influence on ot and J(sub th). Within this study, the nonlinear effects of D(sub NN) are mostly reproducible with an equivalent constant diffusion coefficient.

Li, Jian-Zhong↗
NASA NTRS1999

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Liu, Ansheng↗