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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Stopping characteristics of boron and indium ions in silicon

The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Observation of indium ion migration-induced resistive switching in Al/Mg{sub 0.5}Ca{sub 0.5}TiO{sub 3}/ITO

Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg{sub 0.5}Ca{sub 0.5}TiO{sub 3} (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In{sub 2}O{sub 3} crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In{sup 3+} ion migration is proposed. In{sup 3+} ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

High Affinity Binding of Indium and Ruthenium Ions by Gastrins

The peptide hormone gastrin binds two ferric ions with high affinity, and iron binding is essential for the biological activity of non-amidated forms of the hormone. Since gastrins act as growth factors in gastrointestinal cancers, and as peptides labelled with Ga and In isotopes are increasingly used for cancer diagnosis, the ability of gastrins to bind other metal ions was investigated systematically by absorption spectroscopy. The coordination structures of the complexes were characterized by extended X-ray absorption fine structure (EXAFS) spectroscopy. Changes in the absorption of gastrin in the presence of increasing concentrations of Ga 3+ were fitted by a 2 site model with dissociation constants (K d ) of 3.3 x 10 -7 and 1.1 x 10 -6 M. Although the absorption of gastrin did not change upon the addition of In 3+ ions, the changes in absorbance on Fe 3+ ion binding in the presence of indium ions were fitted by a 2 site model with Kd values for In 3+ of 6.5 x 10 -15 and 1.7 x 10 -7 M. Similar results were obtained with Ru 3+ ions, although the K d values for Ru 3+ of 2.6 x 10 -13 and 1.2 x 10 -5 M were slightly larger than observed for In 3+ . The structures determined by EXAFS all had metal:gastrin stoichiometries of 2:1 but, while the metal ions in the Fe, Ga and In complexes were bridged by a carboxylate and an oxygen with a metal-metal separation of 3.0–3.3 Å, the Ru complex clearly demonstrated a short range Ru—Ru separation, which was significantly shorter, at 2.4 Å, indicative of a metal-metal bond. We conclude that gastrin selectively binds two In 3+ or Ru 3+ ions, and that the affinity of the first site for In 3+ or Ru 3+ ions is higher than for ferric ions. Some of the metal ion-gastrin complexes may be useful for cancer diagnosis and therapy.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2013

Influence of In doping on the structural, photo-luminescence and alcohol response characteristics of the SnO{sub 2} nanoparticles

Graphical abstract: When the sample is exposed to air, the atmospheric oxygen O{sub 2} adsorbs on the sample surface in the form of ionic species O{sup −} by capturing electrons from the conduction band. The adsorbed ionic species O{sup −} react with the test alcohol molecules and are responsible for sensing mechanism. - Highlights: • In-doped SnO{sub 2} samples show smaller crystallinity with crystallite size: ∼7–9 nm. • EDX analyses confirm the incorporation of indium ions in the SnO{sub 2} lattice. • Raman spectra are consistent with the results of XRD and SAED pattern. • Alcohol response has been found to increase with the indium dopant concentration. • 3 at% In-doped sample exhibits maximum response (96.5%) to propan-2-ol at 250 °C. - Abstract: Undoped and In-doped SnO{sub 2} nanoparticles were synthesized by the co-precipitation method. Upon In doping, the samples exhibit reduced crystallinity as compared to the undoped SnO{sub 2}. The Raman spectra of the undoped samples exhibit three fundamental peaks at 467.3, 633.4 and 774.6 cm{sup −1} corresponding to E{sub g}, A{sub 1g} and B{sub 2g} vibration modes, respectively. The PL spectra show two strong emission bands at the wavelengths 417 nm and 479 nm, along with five weak emission peaks in the visible region. Alcohol response characteristics of the In-doped SnO{sub 2} samples were investigated for various concentrations (10–50 ppm) at different operating temperatures (150–250 °C). Among all the samples examined, the 3 at% In-doped SnO{sub 2} sample shows maximum response (96.5%) to propan-2-ol, followed by ethanol (92%) and methanol (90%) at the operating temperature of 250 °C for 50 ppm concentration. For each test alcohol, the response has been found to increase with the In dopant concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Synthesis and crystal structure characterization of InGaZnO{sub 4} with a new defect structure

Single crystals of InGaZnO{sub 4} were synthesized in a sealed Pt-tube at elevated temperatures under normal pressure without flux. InGaZnO{sub 4} has a trigonal crystal system (R3{sup ¯}m; No. 166) deduced from convergent beam electron diffraction (CBED). Single crystal structure refinement from XRD data at −150 °C (a=3.275(1) Å; c=25.99(1) Å; Z=3) revealed an alternate stacking of InO{sub 6/3}{sup −} and (Ga,Zn)O{sub 4/4}{sup +} layers, iso-structural to YbFe{sub 2}O{sub 4}. The cell parameters at room temperature were refined from powder X-ray diffraction data (a=3.284(3) Å and c=26.037(3) Å). The transparent crystals have a gray-bluish color and exhibit an excess of Ga expressed by the cation ratio of In:Ga:Zn=30.2(9):39(1):31(1) determined by energy dispersive X-ray spectroscopy (EDXS). While the isovalent substitution of In{sup 3+} by Ga{sup 3+} is known, an additional aliovalent substitution of Zn{sup 2+} by Ga{sup 3+} is observed. This results in the formula (In{sub 0.9}Ga{sub 0.1})Ga{sub 1.06}Zn{sub 0.91}□{sub 0.03}O{sub 4} where 3% of the cations in 4+1 coordination are vacant due to aliovalent substitution. Further evidence of that defect structure is found in the lattice parameter a which is substantially smaller than in stoichiometric InGaZnO{sub 4}, as well as in the strong absorption in the near-IR from transitions correlated with the defect structure. The bluish color of the crystals is due to an enhanced absorption in the red of the visible spectrum. For the first time, we achieved to image InGaZnO{sub 4} at atomic resolution in the electron microscope proving a perfect periodic stacking of atomic layers. - Graphical abstract: Single crystals of InGaZnO{sub 4} have been synthesized at ambient pressure and analyzed with X-ray diffraction, electron microscopy, and optical absorption. Optical band gap and optical transmission have been determined. - Highlights: • Preparation of single crystals of InGaO{sub 3}(ZnO){sub 1} at ambient pressure for the first time. • Non-stoichiometric compound (In{sub 0.9}Ga{sub 0.1})Ga{sub 1.06}Zn{sub 0.91}□{sub 0.03}O{sub 4} with defect structure, excess of Ga, depletion of Zn. • Real structure of InGaO{sub 3}(ZnO){sub 1} imaged by high resolution TEM for the first time. • Optical band gap and transmission of InGaO{sub 3}(ZnO){sub 1} single crystal.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Electrodeposition Process and Performance of CuIn(Se{sub x}S{sub 1−x}){sub 2} Film for Absorption Layer of Thin-Film Solar Cells

CuIn(Se{sub x}S{sub 1−x}){sub 2} thin film is prepared by the electrodeposition method for the absorption layer of the solar cell. The CuIn(Se{sub x}S{sub 1−x}){sub 2} films are characterized by cyclic voltammetry measurement for the reduction of copper, indium, selenium and sulfur in selenium and sulfur in aqueous solutions with sodium citrate and without sodium citrate. In the four cases, the defined reduction process for every single element is obtained and it is observed that sodium citrate changes the reduction potentials. A linear relationship between the current density of the reduction peak and (scan rate v){sup 1/2} for copper and indium is achieved, indicating that the process is diffusion controlled. The diffusion coefficients of copper and indium ions are calculated. The diffusional coefficient D value of copper is higher than that of indium, and this is the reason why the deposition rate of copper is higher. When four elements are co-deposited in the aqueous solution with sodium citrate, the quaternary compound of CuIn(Se{sub x}S{sub 1−x}){sub 2} is deposited together with Cu{sub 3}Se{sub 2} impure phases after annealing, as found by XRD spectra. Morphology is observed by SEM and AFM. The chemical state of the films components is analyzed by XPS. The UV-Visible spectrophotometer and electrochemistry workstation are employed to measure the photoelectric properties. The results show that the smooth, uniform and compact CuIn(Se{sub x}S{sub 1−x}){sub 2} film is a semiconductor with a band gap of 1.49 eV and a photovoltaic conversion efficiency of 0.45%.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Memsensing by surface ion migration within Debye length

Integration between electronics and biology is often facilitated by iontronics, where ion migration in aqueous media governs sensing and memory. However, the Debye screening effect limits electric fields to the Debye length, the distance over which mobile ions screen electrostatic interactions, necessitating external voltages that constrain the operation speed and device design. Here we report a high-speed in-memory sensor based on vanadium dioxide (VO2) that operates without an external voltage by leveraging built-in electric fields within the Debye length. When VO2 contacts a low-work-function metal (for example, indium) in a salt solution, electrochemical reactions generate indium ions that migrate into the VO2 surface under the native electric field, inducing a surface insulator-to-metal phase transition of VO2. The VO2 conductance increase rate reflects the salt concentration, enabling in-memory sensing, or memsensing of the solution. The memsensor mimics Caenorhabditis elegans chemosensory plasticity to guide a miniature boat for adaptive chemotaxis, illustrating low-power aquatic neurorobotics with fewer memory units.

Guo, Ruihan↗
DOE OSTI2012

Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition

Transparent conductive indium zinc oxide films were prepared by pulsed plasma deposition from a ceramic target (90 wt. % In{sub 2}O{sub 3} and 10 wt. % ZnO). The dependences of film properties upon the substrate temperature was investigated using characterization methods including x-ray diffraction, atomic force microscope, Hall measurement, ultraviolet-visible spectroscopy, and x-ray photoelectron spectroscopy. The films grown at room temperature had a rather smooth surface due to the amorphous structure, with a root mean square roughness of less than 1 nm. The atomic ratio of Zn/(Zn + In) in these films is 15.3 at. %, which is close to that in the target, and the chemical states of indium and zinc atoms were In{sup 3+} and Zn{sup 2+}, respectively. The films deposited on a substrate with a temperature of 200 Degree-Sign C exhibited polycrystalline structure and a preferred growth orientation along the (222) plane. Here the electrical properties were improved due to the better crystallinity, with the films exhibiting a minimum resistivity value of 4.2 Multiplication-Sign 10{sup -4}{Omega} cm, a maximum carrier mobility of 45 cm{sup 2} V{sup -1} s{sup -1}, and an optical transmittance over 80% in the visible region.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Bivalent metal-based MIL-53 analogues: Synthesis, properties and application

Trivalent metal-based MIL-53 (Al{sup 3+}, Cr{sup 3+}, Fe{sup 3+}, In{sup 3+}) compounds are interesting metal–organic frameworks (MOFs) with breathing effect and are promising gas sorption materials. Replacing bridging μ{sub 2}-OH group by neutral ligands such as pyridine N-oxide and its derivatives (PNOs), the trivalent metal-based MIL-53 analogous structures could be extended to bivalent metal systems. The introduction of PNOs and bivalent metal elements endows the frameworks with new structural features and physical and chemical properties. This minireview summarizes the recent development of bivalent metal-based MIL-53 analogues (Mn{sup 2+}, Co{sup 2+}, Ni{sup 2+}), typically, focusing on the synthetic strategies and potential applications based on our own works and literatures. We present the synthetic strategy to achieve structures evolution from single-ligand-walled to double-ligand-walled channel. Properties and application of these new materials in a wide range of potential areas are discussed including thermal stability, gas adsorption, magnetism and liquid-phase separation. Promising directions of this research field are also highlighted. - Graphical abstract: The recent development of bivalent metal-based MIL-53 analogues (Mn{sup 2+}, Co{sup 2+}, Ni{sup 2+}) on their synthetic strategies, properties and potential applications was reviewed. - Highlights: • Structure features of bivalent metal-based MIL-53 analogues are illustrated. • Important properties and application are presented. • Host–guest interactions are main impetus for liquid-phase separation. • Promising directions of bivalent metal-based MIL-53 analogues are highlighted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Synthesis and photoluminescence of (Y{sub 0.9−x}La{sub x})Eu{sub 0.1}VO{sub 4} nano-crystal phosphors using a sol–gel method

Graphical abstract: Emission spectra and CIE chromaticity diagram of the (Y{sub 0.9−x}La{sub x})Eu{sub 0.1}VO{sub 4} phosphor. - Highlights: • The CIE chromaticity of (Y{sub 0.75}La{sub 0.15})Eu{sub 0.1}VO{sub 4} phosphor is (0.66, 0.34). • The D{sub 0} → {sup 7}F{sub 2} transition intensity increases about five times for the 15 mol% of La{sup 3+} ion doping. • The (Y{sub 0.75}La{sub 0.15})Eu{sub 0.1}VO{sub 4} may be suitable for use as a UV-LED converted phosphor. - Abstract: The (La, Eu) co-doped YVO{sub 4} with nano-crystal phosphors were prepared using a sol–gel method. The X-ray diffraction profiles show that all of the peaks are attributed to the YVO{sub 4} phase when co-doped with the (La{sup 3+}, Eu{sup 3+}) ions. The intensities of the diffraction peaks decreases when the La{sup 3+} ion concentrations increase. In addition, under an excitation of 318 nm, the {sup 5}D{sub 0} → {sup 7}F{sub 2} transition intensity increased with increasing the La{sup 3+} ion concentration, and increased about five with the 15 mol% of La{sup 3+} ion doping. This is caused by the large difference in ion radius between the La{sup 3+} and Y{sup 3+} ions, which leads to a distorted lattice and a local nonuniform strain in the vicinity of the Eu{sup 3+} ions when La{sup 3+} ions substitute Y{sup 3+} ions in the (Y{sub 0.9−x}La{sub x})Eu{sub 0.1}VO{sub 4} system. The bright red emission of the (Y{sub 0.9}Eu{sub 0.1})VO{sub 4} phosphor has the CIE chromaticity coordinates of (0.66, 0.34) with 15 mol% La{sup 3+} ion doping, which is very close to the NTSC system standard red chromaticity coordinates of (0.67, 0.33)

36 MATERIALS SCIENCE↗
DOE OSTI2013

Structural and optical properties of ZnO and ZnO:Fe nanoparticles under dense electronic excitations

We report on the changes in structural, morphological, and optical properties of sol-gel derived ZnO and ZnO:Fe nanoparticles due to dense electronic excitations produced by heavy ion irradiations using 200 MeV Ag{sup +15} ion beams. X-ray diffraction studies with Rietveld refinement show that the samples are single phase and tensile strain has been developed in the ion-irradiated samples. The Raman spectroscopy measurements show that ion-irradiation results in microscopic structural disorders and breaking of translational symmetry giving rise to local distortions in the lattice. Atomic force microscopy studies show that roughness of the pellets increases strongly for pure ZnO as compared with Fe-doped ZnO due to ion-irradiation. Fourier transform infrared analysis confirms tetrahedral coordination of O ions surrounding the Zn-ions and surface modification of the nanoparticles. The UV-Vis spectroscopy measurements show that the band gap increases on Fe doping which may be due to 4s–3d and 2p–3d interactions and the Burstein-Moss band filling effect. The band gap decreases after irradiation which can be interpreted on the basis of creation of some new localized energy states above the valence band. Photoluminescence (PL) intensity is enhanced and two new emission bands viz. a blue band at ∼480 nm (related to surface defects) and a green band at ∼525 nm (related to O vacancies) are observed in ion-irradiated nanoparticles. The enhancement of PL-intensity in irradiated samples is attributed to the increase of different defect states and Zn−O bonds on the surfaces of the irradiated nanoparticles arising from surface modification.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Bi-O covalency in PbTiO{sub 3}-BiInO{sub 3} with enhanced ferroelectric properties: Synchrotron radiation diffraction and first-principles study

High-T{sub C} ferroelectric (1 − x)PbTiO{sub 3}-xBiInO{sub 3} shows a sustainable spontaneous polarization in tetragonal phase by amount of BiInO{sub 3} augmented. It is rare and interesting that weak ferroelectric In{sup 3+} substitution does not reduce ferroelectricity as most of BiMeO{sub 3} materials. To understand this abnormality behavior, the structure and the cation displacements are studied by means of synchrotron radiation diffraction. The cation displacements of A-site atoms and B-site atoms exhibit a coupling property. Their sustainedly increasing trend is quantitatively associated with spontaneous polarization. Moreover, the structure, the valence electron density distributions, electron localization function, and Bader analysis have been researched on the chemical bond in (1 − x)PbTiO{sub 3}-xBiInO{sub 3} through first-principles calculations here. Although In atoms substitution reduces the covalency degree, this loss is offset by enhanced covalency between Bi-O bonds. The crucial role of Bi atom substitution not only contributes to enhance the covalency but also promotes the polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Transmission electron microscopy of the amorphization of copper indium diselenide by in situ ion irradiation

Copper indium diselenide (CIS), along with its derivatives Cu(In,Ga)(Se,S){sub 2}, is a prime candidate for use in the absorber layers of photovoltaic devices. Due to its ability to resist radiation damage, it is particularly well suited for use in extraterrestrial and other irradiating environments. However, the nature of its radiation hardness is not well understood. In this study, transmission electron microscopy (TEM) with in situ ion irradiation was used to monitor the dynamic microstructural effects of radiation damage on CIS. Samples were bombarded with 400 keV xenon ions to create large numbers of atomic displacements within the thickness of the TEM samples and thus explore the conditions under which, if any, CIS could be amorphized. By observing the impact of heavily damaging radiation in situ--rather than merely the end-state possible in ex situ experiments--at the magnifications allowed by TEM, it was possible to gain an understanding of the atomistic processes at work and the underlying mechanism that give rise to the radiation hardness of CIS. At 200 K and below, it was found that copper-poor samples could be amorphized and copper-rich samples could not. This difference in behavior is linked to the crystallographic phases that are present at different compositions. Amorphization was found to progress via a combination of one- and two-hit processes. The radiation hardness of CIS is discussed in terms of crystallographic structures/defects and the consequences these have for the ability of the material to recover from the effects of displacing radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Thermodynamic Investigation of the Effect of Target Compositions and Conditions of Their Magnetron Sputtering on Phase Compositions of the Resulting Films

A thermodynamic investigation of plasmochemical processes taking place in a magnetron during sputtering of the targets consisting of indium and dysprosium ions is performed, which allowed identifying the feasibility of forming under the given conditions certain amounts of the chemical compounds In{sub 2}O{sub 3}, Dy{sub 2}O{sub 3}, DyInO{sub 3}. In the thermodynamic analysis of the equilibrium compositions during magnetron sputtering of the films, a universal TERRA software program is used.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Effect of Mn doping on the structural, optical, and magnetic properties of In{sub 2}O{sub 3} films

(In{sub 1−x}Mn{sub x}){sub 2}O{sub 3} films were grown by radio frequency-magnetron sputtering technique. Effect of Mn doping on the structural, optical, and magnetic properties of films is investigated systematically. The detailed structure analyses suggest that Mn ions substitute for In{sup 3+} sites of the In{sub 2}O{sub 3} lattice in the valence of +2 states, and Mn-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. All films show typical room temperature ferromagnetism. The saturation magnetization M{sub s} increases first, and then decreases, while carrier concentration n{sub c} decreases monotonically with Mn doping, implying that the ferromagnetism is not directly induced by the mediated carriers. The optical bandgap E{sub g} of films decreases monotonically with the increase of Mn concentration, and there exists a linear functional dependence between E{sub g} and n{sub c}{sup 2/3}, which is consistent with Burstein-Moss shift arguments. It can be concluded that the ferromagnetic order in Mn-doped In{sub 2}O{sub 3} films is intrinsic, arising from Mn atoms substitution for the In sites of In{sub 2}O{sub 3} lattice. The oxygen vacancies play a mediation role on the ferromagnetic couplings between the Mn ions.

36 MATERIALS SCIENCE↗