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At least 19 records

Indium Single-Ion Frequency Standard

A single laser-cooled indium ion is a promising candidate for an ultimate resolution optical time or frequency standard. It can be shown that single ions from group IIIA of the periodic table (indium, thallium, etc.) can have extremely small systematic errors. In addition to being free from Doppler, transit-time and collisional shifts, these ions are also quite insensitive to perturbations from ambient magnetic and electric fields (mainly due to the use of a J=0-0 transition for spectroscopy). Of all group IIIA ions, indium seems to be the most practical, since it is heavy enough to have a tolerable intercombination cooling transition rate and (unlike thallium) has transitions which are easily accessible with frequency multiplied continuous-wave lasers. A single indium ion standard has a potential inaccuracy of one part in 10(exp 18) for integration times of 10(exp 6) seconds. We have made substantial progress during the grant period in constructing a frequency standard based upon a single indium ion. At the beginning of the grant period, single indium ions were being successfully trapped, but the lasers and optical systems were inadequate to achieve the desired goal. We have considerably improved the stability of the dye laser used to cool the ions and locked it to a molecular resonance line, making it possible to observe stable cooling-line fluorescence from a single indium ion for reasonable periods of time, as required by the demands of precision spectroscopy. We have substantially improved the single-ion fluorescence signal with significant benefits for the detection efficiency of forbidden transitions using the 'shelving' technique. Finally, we have constructed a compact, efficient UV 'clock' laser and observed 'clock' transitions in single indium ions using this laser system. We will elaborate on these accomplishments.

Nagourney, Warren↗

Active spacecraft potential control: An ion emitter experiment

The cluster spacecraft are instrumented with ion emitters for charge neutralization. The emitters produce indium ions at 6 keV. The ion current is adjusted in a feedback loop with instruments measuring the spacecraft potential. The system is based on the evaporation of indium in the apex field of a needle. The design of the active spacecraft potential control instruments, and the ion emitters is presented.

Riedler, W.↗

A Secondary Ion Mass Analyzer for Remote Surface Composition Analysis of the Galilean Moons

Galileo in-situ dust measurements have shown that the Galilean moons are surrounded by tenuous dust clouds formed by collisional ejecta from their icy surfaces, kicked up by impacts of interplanetary micrometeoroids. The majority of the ejecta dust particles have been sensed at altitudes below five between 0.5 and 1 micron, just above the detector threshold, indicating a size distribution decreasing towards bigger particles. their parent bodies. They carry information about the properties of the surface from which they have been kicked up. In particular, these grains may carry organic compounds and other chemicals of biological relevance if they exist on the icy Galilean moons. In-situ analysis of the grain composition with a sophisticated dust analyzer instrument flying on a Jupiter Icy Moons Orbiter can provide important information about geochemical and geophysical processes during the evolutionary histories of these moons which are not accessible with other techniques from an orbiter spacecraft. Thus, spacecraft-based in-situ dust measurements can be used as a diagnostic tool for the analysis of the surface composition of the moons. This way, the in-situ measurements turn into a remote sensing technique by using the dust instrument like a telescope for surface investigation. An instrument capable of very high resolution composition analysis of dust particles is the Cometary Secondary Ion Mass Analyzer (COSIMA). The instrument was originally developed for the Comet Rendezvous and Asteroid Flyby (CRAF) mission and has now been built for ESA'S comet orbiter Rosetta. Dust particles are collected on a target and are later located by an optical microscope camera. A pulsed primary indium ion gun partially ionizes the dust grains. The generated secondary ions are accelerated in an electric field and travel through a reflectron-type time-of-flight ion mass spectrometer.

Krueger, H.↗

Magnetospheric Multiscale Mission Attitude Dynamics: Observations from Flight Data

Extensive flight data is being collected throughout the MMS mission that includes quantities that are of interest for attitude dynamics studies such as spin rate, spin axis orientation nutation rate, etc. One example of such data is the long-term evolution of the spin rates of the four spacecraft. Spikes in these rates are observed that are separated by the MMS orbital period (just under 24 hr) and occur around perigee due to gravity-gradient torque. Periodic discontinuities in spin rate are caused by the controller resetting the spin rate approximately to the nominal 3.1 RPM value at the time of each maneuver. In between, a slow decay in spin rate can be seen to occur. The paper will discuss various disturbance torque mechanisms that could potentially be responsible for this behavior: these include magnetic hysteresis, eddy currents, solar radiation pressure, and a possible interaction between gravity-gradient and wire boom flexibility effects. One additional disturbance mechanism is produced by the Active Spacecraft Potential Control (ASPOC) devices: these emit positive indium ions to keep the MMS spacecraft electrically neutral, so as not to corrupt the electric field observations that are made by some of the on-board instruments. The spin rate decays that could be produced by these various mechanisms will be quantified in the paper, and their signatures described. Comparing these with the observations from flight data then allow the most likely candidate to be determined.

DYNAMICS↗

Ion-implanted high microwave power indium phosphide transistors

Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.

Biedenbender, Michael D.↗

Creepy (not KREEPy) Gold-Indium Intermetallic Compounds on Secondary Ion Mass Spectrometry Samples

A series of Secondary Ion Mass Spectrometry (SIMS) sessions to measure hydrogen (H) in Martian meteorite minerals was completed using the Cameca 6f SIMS and NanoSIMS 50L at Arizona State University (ASU). During these sessions, a “creeping” phenomenon has occurred, where the edges of samples pressed in indium are covered by a metal alloy. We summarize these observations herein, present a collection of preliminary data, and discuss explanations and concerns for future SIMS work. We conclude the report with a research plan for further study.

Dudley, J. M.↗

Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

Hall, C.↗

Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

Biedenbender, M. D.↗

Micrometer to Atomic Scale Characterisation of Primitive Astromaterials Using A Novel Method, Metis-Fa: A Coordinated Atom Probe Tomography, Transmission Electron Microscopy and NanoSIMS Approach

Introduction: Presolar grains preserve isotopic, chemical and microstructural records of physical and chemical processing, and formation mechanisms within a vast range of evolved stellar systems, the interstellar medium, solar nebula and their parent bodies. These evolutionary records are preserved at the micrometric to atomic scale, requiring coordinated studies to expand our understanding of evolutionary processes occurringthroughout ours and external stellar systems [1]. NanoSIMS enabled rapid in situ identification and isotopic characterisation of presolar grains and their stellar origins using 17O/16O and 18O/16O, and 13C/12C isotopic ratios [1]. Coordination with transmission electron microscopy (TEM) revealed crystallographic and localised contextual relationships and quantitively constrained their major and minor compositions [1]. However, trace elements cannot be quantified, the most sensitive geochemical tracers of environmental conditions, essential to unravelling the chemical record of their evolutionary pathway and parent stellar systems [2-3] . Furthermore, owing to the combination of technical limitations (only 5 – 7 isotopes can be measured per NanoSIMS run) and their small grain sizes of 100 nm < 3 μm (with rare exceptions in nanodiamonds (2 nm ≤) and SiC (< 40 μm)), the number of measurable isotopes per grain volume is limited [1,3] . Through more comprehensive isotopic studies of presolar grains, NanoSIMS studies have shown the importance of the latter, identifying Fe and Mg as important indicators of nuclear synthetic processing and their stellar origins, respectively [4- 5]. Coordination of NanoSIMS and Atom Probe Tomography (APT) revealed morphological signatures, and isotopic and chemical signatures at major to trace levels without requirements for preselection of elements [6]. However, crystallographic signatures in localized contextual relationships cannot be measured. Consequently, coordination of NanoSIMS, TEM and APT is essential to gain access to almost all contextual, structural and geochemical signatures within each presolar grain.Transmission electron microscopy requires a 100 nm thin lamella which is unstable in APT and would not produce any viable data. Atom probe tomography requires a needle-shaped specimen which when measured in TEM removes the local context, impacts the quality of the TEM diffraction images due to the shank angle of the needle, and can alter the chemistry of beam sensitive materials from the higher degree of surface exposure at the tip. To address these issues, we developed METIS-Fa (Multi-technical measurements of Electron Transparent materials using an Indium Sandwich - a FIB approach). A novel method which enables coordination of NanoSIMS, TEM and APT for generalized and targeted studies of individual grains, including beam sensitive materials, without compromising sample preparation requirements for TEM and APT. This method requires only indium and a Focus Ion Beam (FIB), minimizing the movement of fragile materials while still enabling preparation of TEM lamella into APT needles. Samples: Initial experimental development and testing of the method occurred at Astromaterials Research and Exploration Science (ARES), Johnson Space Centre (JSC), NASA and APT measurements and needle preparation occurred at JdLC, Curtin University. Synthetic silicate samples were used as analogs for presolar silicates when performing a trial run of the method. Samples were extracted from a polished thin section created at JSC, NASA, comprised of 38 wt.% Si, 17 wt.% FeO, 13 wt.% MgO, 12 wt.% Al, 11 wt.% Ca based on electron microprobe analysis (EMPA) [8] . Experimental details, pressure and temperature conditions were presented in [8] and references therein. Testing of the capability to target individual grains in mineral matrices using this method for acquisition in APT, measured matrix regions in meteoritic thin sections of primitive meteorites. These meteorites and their identified presolar grains for future targeted studies are detailed in [9]. Techniques: The TEM-FIB lamella were prepared using a FIB. An e-beam assisted pt deposition was used as a protective coating for the synthetic and meteoritic samples. When targeting individual grains, a secondary e-beam assisted pt deposition button is placed over the desired grain before the protective coating to denote its location. A JEOL 2500SE field-emission TEM was used for high-resolution imaging, energy-dispersive X-ray (EDX) and electron diffraction data.TheMETIS-Fa method was experimentally designed, tested and executed using a FIB at ARES, JSCNASA. Needles for APT were prepared using the Tescan Lyra3 GM Dual Beam Focus Ion Beam (FIB) Field Emission SEM (FE-SEM) at the JdLC, Curtin University. Atom probe tomography measurements were conducted using a CAMECA Local Electrode Atom Probe, LEAP 4000X HR. Two pure indium needles were analyzed initially to constraining acquisition parameters and stability under the beam. Manual acquisition was required to maintain evaporation of specimen’s at the apex and monitor interactions with measurement parameters. Experimental Design: Indium foil is pressed onto an Al stub with a pneumatic press and mounted into the FIB adjacent to the TEM-FIB lamella of interest. Using a FIB, two indium slices (5 μm x ~300 nm x 3 μm) are extracted from indium foil and aligned with the TEM-FIB lamella before touching the TEM-FIB lamella. Each slice is then attached through cold welding to the FIB-TEM lamella. This approach eliminates the need for chemical treatments and proved effective for aligning the Indium within the region of interest for APT, holding it in place for up to 4 days during testing.Once both indium slices are attached within their pre-determined region per grain targeting requirements, they are gradually melted onto the FIB-TEM lamella.When targeting a specific grain, measurements should be taken of the pt button and its distance from edge to edge of the lamella before and after sandwiching. A secondary button should be placed over the same region after the Indium slices have been attached to improve precision when preparing APT needles. Results: Figure 1 shows two indium slices melted onto a FIB-TEM lamella, adding additional bulk for preparation into APT needles as shown in Figure 2 [7] . The latter was essential so samples could be measured in TEM and APT without compromising sample preparation requirements and consequently data quality and acquisition stability. METIS-Fa proved effective forimproving geometry. Figure 3 shows a successful APTrun of the synthetic silicate. EMPA, TEM and APTshowed no chemical alterations. During targetingtesting, a solar silicate grain was successfully identifiedand measured in TEM, and prepared into an APTneedle. However, the indium was melted too long during sample preparation, causing expansion andformation of internal porosity leading to sample loss.Conclusion: METIS-Fa greatly expands the number of isotopic and chemical signatures measured per grain volume, and enables measurements of contextual, structural, crystallographic, isotopic and geochemical signatures within individual grains. Gaining access to such a vast range of evolutionary signatures required for expanding our understanding of external stellar and planetary systems and the evolution of our solar system. This method was designed for application to a vast range of phases including being sensitive materials and thus provides a way for coordination of NanoSIMS, TEM and APT not just for the study of presolar grains and by extension primitive astromaterials, but studies in a vast range of other fields including the geosciences and material sciences.Acknowledgments: Thankyou to ARES, JSC, NASA; JdLC Curtin University and Space Science Technology Centre for the use of laboratory facilities and funding [confirm].

Nicole D Nevill↗

Status of indium phosphide solar cell development at Spire

On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

Spitzer, M. B.↗

Highly photoconducting O2-doped CdS films deposited by spray pyrolysis

CdS films have been prepared by spraying in air solutions of thiourea with either cadmium chloride or cadmium acetate with varying mole ratio and substrate temperature, and subsequently heat treating in oxygen. Substrates included both bare glass or sapphire and transparent conducting oxide-coated sapphire for electrical measurements lateral and transverse to the CdS plane, respectively. Dark resistances of over 10 to the 14th ohms and light-to-dark conductivities of up to 10 to the 7th were obtained using uncoated substrates. The use of Cd(C2H3O2)2 in place of CdCl2 greatly increased the speed of response although with some sacrifice in photoconductivity. Deposition of CdS on ITO-coated surfaces led to greatly reduced dark resistances for the case of CdCl2, but not Cd(C2H3O2)2, presumably due to HCl reaction with the ITO coating in the course of spraying with the former. Ion microprobe analysis detected indium within the CdS films exhibiting low dark resistance. Measurements of the dark and light conductivities at temperatures down to 77 K are given as are the response times for unetched and HCl-etched surfaces.

Richards, D.↗

Ion-beam-textured and coated surfaces experiment (S1003)

The objective of this LDEF experiment is to measure the effects of exposure to the shuttle launch and near Earth space environments on the optical properties of ion beam textured high absorptance solar thermal control surfaces, the optical and electrical properties of ion beam sputtered conductive solar thermal control surfaces, and the weight loss of ion beam deposited oxide polymer films. The various types of surfaces to be tested include six major categories: (1) ion beam textured surfaces suitable for space solar thermal (solar concentration) application; (2) painted and/or state of the art solar thermal surfaces; (3) ion beam sputtered conductive coatings for thermal and space charge control (e.g., indium-oxide coated metalized FEP Teflon); (4) ion beam sputtered conductive coated solar sail materials for space charge control and cooling through emittance; (5) micrometeoroid sensitive samples whose optical properties change only as a result of micrometeoroid impact; and (6) Kapton coated with oxide polymer films to minimize oxygen degradation at near Earth orbit altitudes.

Mirtich, M. J., Jr.↗

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Coutts, T. J.↗

Sputtering of the gallium-indium eutectic alloy in the liquid phase

Watson and Haff (1980) have discussed a theory which is designed to explain quantitatively isotopic fractionation effects observed during sputtering of simple or complex targets. This theory is based on the assumption that most of the atoms sputtered from a surface originate in the top monolayer. The present investigation is mainly concerned with a direct experimental test of that assumption. The sputtering of both solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy is studied. Results obtained with the aid of ion scattering and Auger spectroscopy show that, in agreement with rough theoretical expectations, the surface monolayer of a gallium-indium alloy with 16.5 percent indium in bulk contains more than 94 percent indium, while the next layer can be only slightly enriched.

Dumke, M. F.↗

Fabrication of OSOS cells by neutral ion beam sputtering

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Burk, D. E.↗

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Beheim, Glenn M.↗

Indium Tin Oxide-Magnesium Fluoride Co-Deposited Films for Spacecraft Applications

Highly transparent coatings with a maximum sheet resistivity between 10(exp 8) and 10(exp 9) ohms/square are desired to prevent charging of solar arrays for low Earth polar orbit and geosynchronous orbit missions. Indium tin oxide (ITO) and magnesium fluoride (MgF2) were ion beam sputter co-deposited onto fused silica substrates and were evaluated for transmittance, sheet resistivity and the effects of simulated space environments including atomic oxygen (AO) and vacuum ultraviolet (VUV) radiation. Optical properties and sheet resistivity as a function of MgF2 content in the films will be presented. Films containing 8.4 wt.% MgF2 were found to be highly transparent and provided sheet resistivity in the required range. These films maintained a high transmittance upon exposure to AO and to VUV radiation, although exposure to AO in the presence of charged species and intense electromagnetic radiation caused significant degradation in film transmittance. Sheet resistivity of the as-fabricated films increased with time in ambient conditions. Vacuum beat treatment following film deposition caused a reduction in sheet resistivity. However, following vacuum heat treatment, sheet resistivity values remained stable during storage in ambient conditions.

Dever, Joycer A.↗