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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Numerical analysis of temperature and stress fields in hybrid indium antimonide arrays detector with laser irradiation

Thermal-stress effects are the major cause of failure in infrared focal-plane arrays detector, during laser irradiation. Based on the established three-dimensional structural model of hybrid indium antimonide infrared focal-plane arrays, the temperature and stress fields of hybrid indium antimonide detectors irradiated by 1.064-μm Gauss pulsed laser are studied, considering the temperature-dependent material parameters. The results indicate that the temperature increase and thermal stress effects are different, in each layer. Especially in indium antimonide chip, which is the uppermost layer of the indium antimonide detector that directly absorbs laser energy, the temperature shows not a smooth decrease as laser intensity from centre to outside, but a concentric-ringed ripple decrease with discontinuous high temperature extremum areas; which induces its own unique stress distributions: during the laser irradiation region, the thermal stress in areas above indium bumps is much lower than that in areas above underfill, but the stress distribution outside the laser irradiation region is exactly the opposite. The temperature and stress distribution in other materials are also different from that in indium antimonide chip. The main reason is that each material has different thermal properties, especially indium bump and underfill, which are alternative distribution in middle layers, have quite different thermal parameters. All these make the temperature and stress distribution in each layer having own characteristics. In addition, the change trend of the maximum temperature and stress in each layer in accordance with the laser pulse number are also studied. The maximum stress as well as temperature always occurs in the indium antimonide chip.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of spin-orbit interaction on the electronic structure of indium-antimonide d bands

The bands and densities of states of d bands in indium antimonide (InSb) are determined taking into account and disregarding the spin-orbit interaction. It is established that taking into account the effect of spin-orbit interaction results also in a substantial change in the dispersion of the obtained bands instead of only in the doublet splitting of the band of core d levels at ∼(0.79–0.86) eV. It is established that it is indium 4d states with e{sub g} and t{sub 2g} symmetry that give the main contribution to the density of states. The calculations are carried out by the LAPW method with the exchange-correlation potential in the generalized gradient approximation (LAPW + GGA)

36 MATERIALS SCIENCE↗
DOE OSTI2012

Low frequency pressure modulation of indium antimonide

A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient {alpha} of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

The effect of an excess of components on the electrical properties of indium-antimonide films

The causes of anomalous behavior of the Hall mobility of charge carriers as a result of a decrease in the measurement temperature from 300 K in indium-antimonide films obtained by the method of three temperatures are studied. It is shown experimentally that there exist drops in the “admissible” temperatures of evaporators of components and the substrate within which continuous conducting films are obtained. The optimal conditions for sample preparation for which the values of the mobility remain practically constant in the temperature range of 150–350 K are determined. On the basis of the comparison with optical-transmission spectra, it is concluded that there is a high concentration of defects in the films; these defects are related to deviation of the composition from stoichiometry and act as donor and acceptor centers. The presence of such defects makes it possible to explain the decrease in mobility in the films as the temperature is lowered.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural, morphological and Raman studies of pulse electrosynthesised indium antimonide thin films

InSb films deposited on fluorine doped tin oxide (FTO) substrates by a pulse elctrodeposition technique. The deposition was carried out at an applied potential −1.3V versus Ag/AgCl electrode. Structural, morphological and optical studies were performed on the electrodeposited InSb. X-ray diffraction (XRD) studies show that the deposited InSb films are polycrystalline in nature having the zinc blend structure. The crystallite size (D), dislocation density (δ) and strain (ε) were calculated using XRD results. The EDAX analysis shows that chemical composition of In{sup 3+} and Sb{sup 3+} ions is close to the required stoichiometry. The surface morphology of the deposited films was examined using scanning electron microscopy (SEM). SEM studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. However, the crystallite size determined by the Scherrer method shows a size close to 30 nm. Surface morphology studies of the InSb films were also performed using atomic force microscopy (AFM). The average surface roughness as measured by AFM is around 40 nm. Hot probe studies show that all the electrodeposited thin films have n type conductivity and the thickness of the films is calculated using electrochemical formula.

36 MATERIALS SCIENCE↗
DOE OSTI2016

On the local injection of emitted electrons into micrograins on the surface of A{sup III}–B{sup V} semiconductors

The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 10{sup 16} cm{sup –3} for indium antimonide and 4 × 10{sup 17} cm{sup –3} for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2017

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

Indium-antimonide quantum dots are for the first time formed on the surface of an epitaxial In{sub 0.25}GaAsSb layer isoperiodic to a GaSb(001) substrate by liquid-phase epitaxy in the range of temperatures T = 450–467°C. Transmission electron microscopy shows that, the shape of quantum dots is close to a truncated cone and their distribution in terms of height and base size in the ensemble is monomodal. Large-sized quantum dots (with a base size of 30–50 nm and height of 3 nm) exhibit specific contrast in the plane-view diffraction-mode image, which is indicative of the presence of misfit defects. Modification of the chemical composition of the working surface of the substrate by the deposition of an epitaxial In{sub 0.25}GaAsSb layer makes possible a threefold increase in the density of the ensemble of InSb quantum dots (1 × 10{sup 10} cm{sup –2}) compared to the density in the case of deposition directly onto the GaSb binary compound.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

Zamiri, M. (ORCID:000000020042735X)↗
DOE OSTI2019

Mechanism and Features of Field Emission in Semiconductors

The field electron emission from individual grains on the surface of Si and III–V semiconductors, namely, gallium arsenide, indium arsenide, and indium antimonide is investigated by scanning tunneling microscopy. From the correspondence of the functional dependence of the I–V characteristic to the theory, the emission mechanism is determined as direct tunneling through a depleted or enriched subsurface layer at the voltages V < 1 V and the tunneling emission from the surface electronic states at the voltages V > 1 V. A field-emission threshold of (1–5) × 10{sup 6} V/cm is obtained, which is significantly lower than the values for metals and carbon. The determining factors of this emission mechanism are the Schottky effect, the localization and size quantization of “light” electrons in the surface area of III–V semiconductors, and the presence of a subsurface depletion layer in silicon. According to the data obtained for the values of the field-emission threshold, indium antimonide in the form of submicron grain particles is the most efficient field emitter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Study the Effect of Substrate Temperature on Structural and Electrical Properties of Electron Beam Evaporated In{sub 1−x}Sb{sub x} Thin Films

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared and high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10{sup −5} torr using prepared non‐stoichiometric InSb powder using formula In{sub 1−x}Sb{sub x}(0.2<x<0.4) as a source materials. The characteristics of the films such as structural and electrical properties were investigated in terms of substrate temperature. X‐ray diffraction studies of thin films confirmed the polycrystalline and show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with increase of substrate temperature while dislocation density and strain are decreases. Hall measurements indicate that the films were n‐type, having carrier concentration ∼10{sup 14} cm{sup −3} and mobility ∼10{sup 3} cm{sup 2}/Vs for the film thickness of 300 nm. It is also observed that the carrier concentration (N) decreases and the Hall mobility (μ) increases with the increase of substrate temperature. At the request of all authors, Rahul, S. R. Vishwakarma, Aneet Kumar Verma, and Ravi Shankar Nath Tripathi, and due to errors in the article, the paper is retracted from the scientific record.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

Current–voltage (I–V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I–V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

Indium-antimonide quantum dots (7–9 × 10{sup 9} cm{sup 2}) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Resonant transducers for solid-state plasma density modulation

We have developed transducers capable of modulating the plasma density and plasma density gradients in indium antimonide. These transducers make use of piezoelectric drivers to excite acoustic pressure resonance at 3λ/2, generating large amplitude standing waves and plasma density modulations. The plasma density has been directly measured using a laser diagnostic. A layered media model shows good agreement with the experimental measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Thermoelectric properties of InSb〈Zn〉 in nanoporous glass

Nanowire structures of zinc-doped indium antimonide are fabricated. These structures are formed in porous glass with characteristic pore sizes of ~7 nm. The temperature dependences of the electrical conductivity, Seebeck coefficient, and current–voltage characteristics are studied. An increase in the InSb Seebeck coefficient in porous glass in comparison with that of the bulk material is detected for the first time.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field

A version of the spin–orbit interaction of orbitally moving and spin-oriented electrons in a longitudinal autosoliton in indium antimonide under a longitudinal magnetic field is proposed and considered. The additional energy gained by spin–orbit electrons due to this interaction is determined. Expressions for the change in the mobility during the orbital motion of electrons under a magnetic field and the additive mobility of spin-oriented electrons are derived and calculated. The coefficients of the mutual influence of changing electron mobility in the case of orbital motion and the additive mobility of spin-oriented electrons are calculated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures

Germanium, silicon, gallium arsenide, and indium antimonide n-type crystals on the metal side of the insulator–metal transition (Mott transition) are considered. In the quasi-classical approximation, the static (direct current) electrical conductivity and the drift mobility of electrons of the c band, and electrostatic fluctuations of their potential energy and the mobility edge are calculated. It is considered that a single event of the elastic Coulomb scattering of a mobile electron occurs only in a spherical region of the crystal matrix with an impurity ion at the center. The results of calculations using the proposed formulas without using fitting parameters are numerically consistent with experimental data in a wide range of concentrations of hydrogenlike donors at their weak and moderate compensation by acceptors.

36 MATERIALS SCIENCE↗