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The 1999 evaluation for A = 125 mass chain (1999Ka26) has been revised using experimental results from decays and reactions. Adopted values for the level and decay properties are tabulated. Inconsistencies and discrepancies are noted.
The Korea Atomic Energy Research Institute (KAERI) is carrying out the design of a 'Prototype Generation IV Sodium-cooled Fast Reactor (PGSFR)' in cooperation with Argonne National Laboratory (ANL) in the US. In regard to computer codes V and V, a large-scale sodium thermal-hydraulic test program is currently being progressed in parallel with the PGSFR design, which is called STELLA (Sodium Test Loop for Safety Simulation and Assessment). The final objective of this program is to collect a separate and integral effect test database to validate the safety analysis codes and other thermal hydraulic design codes. In the first phase of the STELLA program, the sodium component test loop (hereafter called STELLA-1) was constructed at the KAERI site, and it has been used for performance tests of key sodium heat exchangers in PGSFR. Since this sodium test loop is basically for separate effects tests to verify the performance of key sodium components, the test database obtained from STELLA-1 has been used for the V and V of safety codes as well as heat exchanger design codes. The second phase of the program aiming at an integral effect test is called STELLA-2, which will be used for synthetic review of the key safety issues of PGSFR. The basic and detailed design phases of the STELLA-2 test facility are underway in accordance with the specific design requirements reflecting the whole design features of PGSFR. The facility installation is scheduled to be completed by 2018. Then the main experiments including the start-up tests will begin and the first integral effect test database will be constructed by the end of 2019. Based on the STELLA-2 platform, a simulation of the PGSFR transient will be made to evaluate the plant dynamic behaviors and demonstrate the decay heat removal performance. Multi-dimensional effects coming from a large sodium pool system will be identified as well. The test database obtained from the STELLA-2 experiment will be used for the validation of the safety analysis codes and other thermal hydraulics codes, and this project finally contributes to the specific design phase of PGSFR. This paper presents both the results of heat transfer tests for the key sodium heat exchangers using STELLA-1 and the first results of heat exchanger design codes V and V. The recent progress of the engineering design for the STELLA-2 test section is introduced and its specific design parameters are also presented in this paper with detailed evaluation results of their scaling distortions. A large-scale sodium thermal-hydraulic test program (STELLA) was introduced with the specific activities for separate and integral effects tests. The test database obtained from STELLA-1 was successfully used to validate both the heat exchanger design and safety analysis codes. Specific design features of the integral effects test facility (STELLA- 2) with a scaling ratio of 1/5 in length and 1/125 in volume were also presented. Validation of the STELLA-2 facility design is underway using system codes and CFD tools. Dedicated water-mockup experiments to verify the scaling design of key subsystems are currently being conducted as well. (authors)
Measurements of the 5𝑝 2 𝑃 3/2 → 9𝑠 2 𝑆 1/2 and 5𝑝 2 𝑃 1/2 → 8𝑠 2 𝑆 1/2 transitions in the indium atom, combined with new atomic physics calculations, were used to extract the changes in mean-square nuclear charge radii, 𝛿⟨𝑟 2 ⟩, of the indium (𝑍 = 49) isotopes 101–111 In , 113–123 In , and 125–131 In . With a proton hole in the closed nuclear shell of 𝑍 = 50, indium provides a detailed study of the effect of unpaired nucleons adjacent to the proton-shell closure, allowing investigation into the charge radii for isotopes between the two major neutron-shell closures at 𝑁 = 50 and 𝑁 = 82. A study of the variations in charge radii between neighboring isotopes with neutron number (the ‘odd-even staggering') is presented and provides further insight and challenges for the theoretical description of the size of proton-hole nuclei. Two nuclear theories, density functional theory and the valence-space in-medium similarity renormalization group method, were employed to interpret the data. The new information obtained in this work provides valuable insights into the successes and shortcomings of the theoretical approaches employed.
In this study, we report the negative trion and biexciton Auger dynamics in very high-quality InP/ZnSe/ZnS quantum dots (QDs) having varying amounts of indium-based traps in the ZnSe shell. Negative trion times are determined by time-correlated photon-counting measurements on QDs that have been photoreduced with lithium triethylborohydride. We find that the Auger times vary from 280 to 425 ps and scale linearly with the total particle volume. Excess indium in the ZnSe shell gives rise to hole traps that are transiently populated following photoexcitation. Comparing stoichiometric and nonstoichiometric particles, we find that the negative trion lifetimes are independent of the presence of indium in the ZnSe shell. Biexciton dynamics are determined from transient absorption (TA) bleach recovery measurements. Absorption of two photons results in the formation of two types of biexcitons: those having both holes in the InP core (XX state) and those having one hole trapped in the ZnSe shell (XT state). XX state Auger times are measured in stoichiometric QDs, and for these particles, the Auger times are ~80 ps. Nonstoichiometric QDs show an additional long TA decay component, assigned to Auger recombination of the XT state. Here, a previous study (J. Phys. Chem. C 2021, 125, 4110–4118) found that hole trapping at indium-based shell traps results in a slow photoluminescence (PL) rise component. We find that the fraction of the XT state formed by the absorption of two photons correlates with the product of the fraction of slow PL rise and the rise time constant following one-photon excitation.
Precise mass measurements of the neutron-rich 125–130 In isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q = 13+ thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. Here, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z = 50). In addition, the energies of the indium isomers are presented. The (8 - ) level in 128 In is found to be 78 keV lower than previously thought and the (21/2 - ) isomer in 127 In is shown to be lower than the literature value by more than 150 keV.
The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, including a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.
Purpose: GATE is a Monte Carlo simulation toolkit based on the Geant4 package, widely used for many medical physics applications, including SPECT and PET image simulation and more recently CT image simulation and patient dosimetry. The purpose of the current study was to calculate dose point kernels (DPKs) using GATE, compare them against reference data, and finally produce a complete dataset of the total DPKs for the most commonly used radionuclides in nuclear medicine. Methods: Patient-specific absorbed dose calculations can be carried out using Monte Carlo simulations. The latest version of GATE extends its applications to Radiotherapy and Dosimetry. Comparison of the proposed method for the generation of DPKs was performed for (a) monoenergetic electron sources, with energies ranging from 10 keV to 10 MeV, (b) beta emitting isotopes, e.g., {sup 177}Lu, {sup 90}Y, and {sup 32}P, and (c) gamma emitting isotopes, e.g., {sup 111}In, {sup 131}I, {sup 125}I, and {sup 99m}Tc. Point isotropic sources were simulated at the center of a sphere phantom, and the absorbed dose was stored in concentric spherical shells around the source. Evaluation was performed with already published studies for different Monte Carlo codes namely MCNP, EGS, FLUKA, ETRAN, GEPTS, and PENELOPE. A complete dataset of total DPKs was generated for water (equivalent to soft tissue), bone, and lung. This dataset takes into account all the major components of radiation interactions for the selected isotopes, including the absorbed dose from emitted electrons, photons, and all secondary particles generated from the electromagnetic interactions. Results: GATE comparison provided reliable results in all cases (monoenergetic electrons, beta emitting isotopes, and photon emitting isotopes). The observed differences between GATE and other codes are less than 10% and comparable to the discrepancies observed among other packages. The produced DPKs are in very good agreement with the already published data, which allowed us to produce a unique DPKs dataset using GATE. The dataset contains the total DPKs for {sup 67}Ga, {sup 68}Ga, {sup 90}Y, {sup 99m}Tc, {sup 111}In, {sup 123}I, {sup 124}I, {sup 125}I, {sup 131}I, {sup 153}Sm, {sup 177}Lu {sup 186}Re, and {sup 188}Re generated in water, bone, and lung. Conclusions: In this study, the authors have checked GATE's reliability for absorbed dose calculation when transporting different kind of particles, which indicates its robustness for dosimetry applications. A novel dataset of DPKs is provided, which can be applied in patient-specific dosimetry using analytical point kernel convolution algorithms.
A new series of neutron-rich indium mass measurements is reported from the TITAN multiple-reflection time-of-flight mass spectrometer (MR-TOF-MS). These mass measurements cover 125-134 In (N = 76–85) and include ground states as well as isomeric states. The masses of nuclei in this region are known to be of great importance for accurately modeling r-process nucleosynthesis, and the significance of the reported neutron-rich indium masses is discussed in this context. Results are compared with earlier experimental data where available as well as theoretical mass models. The measurements reported here include the first mass measurements of 133,134 In, as well as the first direct mass measurement of 132 In. The masses of 125-131 In ground states and several isomers were previously measured to higher precision by Penning trap mass spectrometry, which also resolved some low-lying isomers that could not be resolved in this work. The earlier Penning trap measurements serve as excellent cross-checks for the MR-TOF-MS measurements, and in some cases the MR-TOF-MS measurements improve the literature uncertainties of higher-lying isomer masses and excitation energies. Finally, a new isomeric state for 128 In, recently reported for the first time by the JYFLTRAP group, is also confirmed by the TITAN MR-TOF-MS, with a measured excitation energy of 1813(17) keV.
We show the model for intrinsic defects in Cu(In,Ga)Se 2 semiconductor layers is still under debate for the full range between CuInSe 2 and CuGaSe 2 . It is commonly agreed by theory and experiment, that there are at least one shallow donor and two shallow acceptors. Spatially resolved photoluminescence on CuGaSe 2 previously revealed a third acceptor. In this study we show with the same method that the photoluminescence peak at 0.94 eV in CuInSe 2 , previously attributed to a third acceptor, is a phonon replica. However another pronounced peak at 0.9 eV is detected on polycrystalline CuInSe 2 samples grown with high copper and selenium excess. Intensity and temperature dependent photoluminescence measurements reveal that this peak originates from a DA-transition from a shallow donor (<8 meV) into a shallow acceptor A3 (135 [Formula: see text] 10) meV. The DA3 transition has three distinct phonon replicas with 28 meV spectral spacing and a Huang Rhys factor of 0.75. Complementary admittance measurements are dominated by one main step with an activation energy of 125 meV which corresponds well with the found A3 defect. The same defect is also observed in Cu(In,Ga)Se 2 samples with low gallium content. For [Ga]/([Ga] + [In])-ratios of up to 0.15 both methods show a concordant increase of the activation energy with increasing gallium content shifting the defect deeper into the bandgap. The indium vacancy ν In is discussed as a possible origin of the third acceptor level in CuInSe 2 and ν III in Cu(In,Ga)Se 2 .
In this work, we report a new polymorph of LuRuGe, obtained in indium flux. This phase exhibits the noncentrosymmetric ZrNiAl-type structure with the space group $Ρ\bar 62m$ as determined by single-crystal X-ray diffraction. This polymorph can convert into another centrosymmetric polymorph (TiNiSi-type structure, space group Pnma ) at high temperatures. In this work, we performed electrical transport, magnetization, and specific heat measurements on this new phase. It shows metallic behavior with a Hall sign change from negative at 2 K to positive at 125 K. LuRuGe exhibits Pauli paramagnetism as the ground state with no local magnetic moments from either the Ru or Lu site. The Debye temperature Θ = 348 K and electronic coefficient γ e = 3.6 mJ K –2 mol –1 are extracted from the low-temperature specific heat data in LuRuGe. We also carried out first-principles density functional theory calculations to map out the electronic band structure and density of states. There are several electronic bands crossing the Fermi level, supporting a multiband scenario consistent with the Hall sign change. The density of states around the Fermi level is mainly from Ru 4d and Ge 4p electrons, indicating a strong hybridization between those atomic orbitals.
In this work, highly conductive anode based on PEDOT:PSS is proposed as substitute of Indio-Tin Oxide (ITO) in flexible solar cells. The anodic conductive polymer was spin coated on a 125 μm thick polyethylene naphthalate (PEN) substrate. The obtained film was characterized in terms of structure and physical- chemical proprieties. The obtained results are very promising and the conductive film will be investigated in future as electrode in a complete polymeric solar cell.
We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (λ ∼ 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g{sup (2)}(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.
We compare the extreme ultraviolet emission characteristics of tin and galinstan (atomic %: Ga: 78.35, In: 14.93, Sn: 6.72) between 10 nm and 18 nm in a laser-triggered discharge between liquid metal-coated electrodes. Over this wavelength range, the energy conversion efficiency for galinstan is approximately half that of tin, but the spectrum is less strongly peaked in the 13-15 nm region. The extreme ultraviolet source dimensions were 110 {+-} 25 {mu}m diameter and 500 {+-} 125 {mu}m length. The flatter spectrum, and -19 Degree-Sign C melting point, makes this galinstan discharge a relatively simple high radiance extreme ultraviolet light source for metrology and scientific applications.
Indium thin films are evaluated as an anode material for Li-ion and Na-ion batteries (theoretical capacities of 1012 mAh g-1 for Li and 467 mAh g-1 for Na). The native surface oxides are responsible for the anomalous electrolyte decomposition during the first cycle while oxidized In species are found to be responsible for the electrolyte decomposition during the subsequent cycles. The presence of 5wt% FEC electrolyte additive suppresses the occurrence of the anomalous electrolyte decomposition during the first cycle but is not sufficient to prevent the decomposition upon further cycling from 0 to 2 V. Prevention of the anomalous decomposition can be achieved by restricting the charge cut-off, for instance at 1.1 V, or by using larger amounts of FEC. The In films show moderately good capacity retention with storage capacities when cycled with Li (950 mAh g-1) but significantly less when cycled with Na (125 mAh g-1). XRD data reveal that several known Li-In phases (i.e LiIn, Li3In2, LiIn2 and Li13In3) form during the electrochemical reaction. In contrast, the reaction with Na is severely limited. The largest amount of inserted Na is evidenced for cells short-circuited 40 hrs at 65C, for which the XRD data show the coexistence of NaIn, In, and an unknown phase. During cycling, mechanical degradation due to repeated expansion/shrinkage, evidenced by SEM, coupled with SEI formation is the primary source of the capacity fade. Finally, we show that the In thin films exhibit very high rate capability for both Li (100 C) and Na (30 C).
Current silicon (Si) fin transistors rely on (100) and (110) crystallographically oriented surfaces, and the proposed alternate channel transistor technology comprises materials with higher mobility than Si. Crystallographically oriented epitaxial germanium (Ge) and indium–gallium arsenide (InGaAs) have the potential to replace Si in ultra-low power transistor applications. The higher carrier lifetime is an indication of superior material quality, which relates to the leakage current of a fin transistor. To gain insights into the carrier recombination dynamics in these crystallographically oriented epitaxial Ge and InGaAs layers, the contactless microwave photoconductive decay (μ-PCD) technique at an excitation wavelength of 1500 nm was employed to probe the orientation-specific carrier lifetimes. Highly effective carrier lifetimes >200 ns for (100)Ge/AlAs and (110)Ge/AlAs, and ~80 ns for (111)Ge/AlAs heterostructures, were extracted at room temperature. The measured carrier lifetime has a strong dependence on the surface orientation, which could be related to orientation-specific bulk trap states present within the bandgap of Ge. The (111)Ge orientation has 3 times lower carrier lifetime compared to the (100)Ge and (110)Ge surface orientations. On the other hand, the carrier lifetimes of 125 μs and 10 ns were determined from (100)InGaAs/InP and (110)InGaAs/InP heterostructures, respectively. The reduction in carrier lifetimes in both (111)Ge and (110)InGaAs was due to high electrical conductivity or higher bulk trap states present within the bandgap as well as the facet-dependent growth of the (110)InGaAs layer on InP. A surface passivating layer is indispensable for these orientation-specific epitaxial layers to improve the carrier lifetime. Therefore, the higher carrier lifetimes from technologically interesting (100)Ge and (110)Ge surfaces would offer a path for the development of Ge-based ultra-low power electronics, and optoelectronic devices based on the (100)InGaAs layer.
We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.