Transport through an impurity tunnel coupled to a Si/SiGe quantum dot.
Abstract not provided.
Foote, Ryan H.↗
SEARCH · Engineering Papers
Results for “IMPURITIES”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Complex state induced by impurities in multiband superconductors
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phonons, thermal conductivity, energy storage (inc↗
Three New Extreme Ultraviolet Spectrometers on NSTX-U for Impurity Monitoring
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Physics - Plasma physics↗
Impurity-induced divertor plasma oscillations
Two different oscillatory plasma regimes induced by seeding the plasma with high- and low-Z impurities are found for ITER-like divertor plasmas, using computer modeling with the DUSTT/UEDGE and SOLPS4.3 plasma-impurity transport codes. The oscillations are characterized by significant variations of the impurity-radiated power and of the peak heat load on the divertor targets. Qualitative analysis of the divertor plasma oscillations reveals different mechanisms driving the oscillations in the cases of high- and low-Z impurity seeding. The oscillations caused by the high-Z impurities are excited near the X-point by an impurity-related instability of the radiation-condensation type, accompanied by parallel impurity ion transport affected by the thermal and plasma friction forces. The driving mechanism of the oscillations induced by the low-Z impurities is related to the cross-field transport of the impurity atoms, causing alteration between the high and low plasma temperature regimes in the plasma recycling region near the divertor targets. The implications of the impurity-induced plasma oscillations for divertor operation in the next generation tokamaks are also discussed.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Solution to the sign problem in a frustrated quantum impurity model
In this work we solve the sign problem of a frustrated quantum impurity model consisting of three quantum spin-half chains interacting through an anti-ferromagnetic Heisenberg interaction at one end. We first map the model into a repulsive Hubbard model of spin-half fermions hopping on three independent one dimensional chains that interact through a triangular hopping at one end. We then convert the fermion model into an inhomogeneous one dimensional model and express the partition function as a weighted sum over fermion worldline configurations. By imposing a pairing of fermion worldlines in half the space we show that all negative weight configurations can be eliminated. This pairing naturally leads to the original frustrated quantum spin model at half filling and thus solves its sign problem.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Impurity-limited resistance and phase interference of localized impurities under quasi-one dimensional nano-structures
The impurity-limited resistance and the effect of the phase interference among localized multiple impurities in the quasi-one dimensional (quasi-1D) nanowire structures are systematically investigated under the framework of the scattering theory. We derive theoretical expressions of the impurity-limited resistance in the nanowire under the linear response regime from the Landauer formula and from the Boltzmann transport equation (BTE) with the relaxation time approximation. We show that the formula from the BTE exactly coincides with that from the Landauer approach with the weak-scattering limit when the energy spectrum of the in-coming electrons from the reservoirs is narrow and, thus, point out a possibility that the distinction of the impurity-limited resistances derived from the Landauer formula and that of the BTE could be made clear. The derived formulas are applied to the quasi-1D nanowires doped with multiple localized impurities with short-range scattering potential and the validity of various approximations on the resistance are discussed. It is shown that impurity scattering becomes so strong under the nanowire structures that the weak-scattering limit breaks down in most cases. Thus, both phase interference and phase randomization simultaneously play a crucial role in determining the impurity-limited resistance even under the fully coherent framework. When the impurity separation along the wire axis direction is small, the constructive phase interference dominates and the resistance is much greater than the average resistance. As the separation becomes larger, however, it approaches the series resistance of the single-impurity resistance due to the phase randomization. Furthermore, under the uniform configuration of impurities, the space-average resistance of multiple impurities at room temperature is very close to the series resistance of the single-impurity resistance, and thus, each impurity could be regarded as an independent scattering center. The physical origin of this “self-averaging” under the fully coherent environments is attributed to the broadness of the energy spectrum of the in-coming electrons from the reservoirs.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Effect of HEH[EHP] impurities on the ALSEP solvent extraction process
In solvent extraction processes, organic phase impurities can negatively impact separation factors, hydrolytic performance, and overall system robustness. The resulting inconsistent performance can affect the process-level viability of a separation concept, and thus knowledge of the impurities present, their effects on the process, and how to remove them are vital. Deleterious impurities may be introduced into a system from reagent synthesis, or result from degradation via radiolysis and hydrolysis during use. In this work, the acidic extractant, 2-ethylhexylphosphonic acid mono-2-ethylhexyl ester (HEH[EHP])—proposed for application in extractive processes aimed at separating trivalent minor actinides from lanthanides and other fission products—is characterized with respect to its common impurities and their impact on Am(III) stripping in the Actinide Lanthanide SEParation (ALSEP) system. Furthermore, to control impurities in HEH[EHP], existing purification technologies commonly applied for the acidic organophosphorus reagent were assessed and a new chromatographic purification method specific to HEH[EHP] is presented.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Impurities in a non-axisymmetric plasma. Transport and effect on bootstrap current
Impurities cause radiation losses and plasma dilution, and in stellarator plasmas the neoclassical ambipolar radial electric field is often unfavorable for avoiding strong impurity peaking. In this work we use a new continuum drift-kinetic solver, the SFINCS code (the Stellarator Fokker-Planck Iterative Neoclassical Conservative Solver) [M. Landreman et al., Phys. Plasmas 21 (2014) 042503] which employs the full linearized Fokker-Planck-Landau operator, to calculate neoclassical impurity transport coefficients for a Wendelstein 7-X (W7-X) magnetic configuration. We compare SFINCS calculations with theoretical asymptotes in the high collisionality limit. We observe and explain a 1/nu-scaling of the inter-species radial transport coefficient at low collisionality, arising due to the field term in the inter-species collision operator, and which is not found with simplified collision models even when momentum correction is applied. However, this type of scaling disappears if a radial electric field is present. We use SFINCS to analyze how the impurity content affects the neoclassical impurity dynamics and the bootstrap current. We show that a change in plasma effective charge Z eff of order unity can affect the bootstrap current enough to cause a deviation in the divertor strike point locations.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Impurity-generated non-Abelions
Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an 𝑠-wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an 𝑠 superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by characteristic disorder, gate voltage induced angular momentum splitting of impurity levels, and by a proximity superconducting gap. The phase diagram exhibits two ranges of gate voltage with conventional superconducting order separated by a gate voltage range with topological superconductivity. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana fermions. Ferromagnetic transitions in the fractional quantum Hall regime may lead to the formation and electrostatic control of higher order non-Abelian excitations.
Edge states↗
Research and Development to Reduce Impurity Production and Transport of the Impurities to the Target in Linear Plasma Devices Using Helicon Plasma Sources
Linear plasma devices used to test plasma facing materials (PFMs) and components for fusion reactors are often suffering under the production of intrinsic impurities from the plasma source system. Most linear plasma devices use internal electrodes (hollow cathodes, reflex arc, or cascading arc), which typically are the source of the main impurities. The next-generation plasma generators use radio frequency (RF) plasma sources like helicons to avoid internal electrodes. However, high power operation of helicons has proven to result in impurity production due to the high rectified sheath voltages created. Depending on the plasma parameters and magnetic configuration, these impurities can be transported to the target and deposited there to unacceptable high levels. Here, in this contribution, the experimental results from Proto-MPEX are summarized, and the conclusions of the impurity source physics are given. Methods to reduce the impurity production, the impurity transport, and the net deposition on the target are presented. These methods to reduce the impurity production include Faraday screens to reduce the sheath voltage drop, high-Z refractory coatings to reduce the erosion yield, and wall conditioning methods. Methods to reduce the impurity transport include changes in the magnetic configuration as well as electron heating to change axial and radial temperature profiles. Preliminary results on the effectiveness of some of these methods are presented.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Motion of a distinguishable Impurity in the Bose gas: Arrested expansion without a lattice and impurity snaking
We consider the real-time dynamics of an initially localized distinguishable impurity injected into the ground state of the Lieb-Liniger model. Focusing on the case where integrability is preserved, we numerically compute the time evolution of the impurity density operator in regimes far from analytically tractable limits. We find that the injected impurity undergoes a stuttering motion as it moves and expands. For an initially stationary impurity, the interaction-driven formation of a quasibound state with a hole in the background gas leads to arrested expansion—a period of quasistationary behavior. In conclusion, when the impurity is injected with a finite center-of-mass momentum, the impurity moves through the background gas in a snaking manner, arising from a quantum Newton’s cradlelike scenario where momentum is exchanged back and forth between the impurity and the background gas.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Full-torus impurity transport simulation for optimizing plasma discharge operation using a multi-species impurity powder dropper in the large helical device
The transport of impurities supplied by a multi-species impurity powder dropper (IPD) in the large helical device (LHD) is investigated using a three-dimensional peripheral plasma fluid code (EMC3-EIRENE) coupled with a dust transport simulation code (DUSTT). The trajectories of impurity powder particles (Boron, Carbon, Iron, and Tungsten) dropped from the IPD and the impurity transport in the peripheral plasma are studied in a full-torus geometry. The simulation reveals an appropriate size of the impurity powder particles and an optimum operational range of the dust drop rates for investigating the impurity transport without inducing radiation collapse. The simulation also predicts a favourable plasma discharge condition for wall conditioning (boronization) using the IPD in order to deposit boron to high plasma flux and neutral particle density areas in the divertor region in the inboard side of the torus.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Atomistic Studies of Individual Impurities and Impurity Complexes in III-V Semiconductors. Final report
The central hypothesis of our investigation is that reduced symmetries significantly influence the properties of individual impurities and impurity complexes in semiconductors. To disentangle the properties of the local environments of these impurities and impurity complexes from the behavior of an ensemble of impurities, at U. Iowa we performed theoretical calculations of specific local environments and developed the theoretical technology to calculate spin and charge transport through those local environments, in which the contact is a localized probe (scanning tunneling microscopy tip). These calculations were designed to be brought into comparison with experimental measurements made by Prof. Gupta’s group at Ohio State University. The principal environment that we focused on is the (110) surface of GaAs and other III-V semiconductors, because pristine surfaces can be revealed through a natural cleavage plane. We studied how the p-d hybridization of transition-metal dopants is influenced by the energetic location and the local environment’s symmetry-breaking of the d levels, and how the 4f-shell states of rare earth impurities couple to the surroundings. We calculated long-distance properties using tight-binding (linear combination of atomic orbitals, LCAO) Green’s function methods. The spin character of the dopants is often coherent on the time-scale of electronic transport through the region, and so correlations of the spin character of a dopant with that of a spinpolarized STM tip, or another dopant in the vicinity, can influence the measured conductivity from STM. We constructed a robust theory for these effects that can be used to describe quantitatively the measurements made by spin-polarized STM.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Generation Kinetics of Nonequilibrium Charge Carriers in Crystals with Deep Impurities Involving Two-Center Transitions between Band and Impurity States
A new and efficient mechanism of nonlinear photoexcitation of a transparent crystal with deep impurity centers is proposed. It is hypothesized that the energy of a quantum of light is smaller than the energy gap between the bottom of the conduction band and the impurity level, but is larger than the gap between the impurity level and the top of the valence band. The kinetics of nonlinear cascade generation of nonequilibrium charge carriers is considered taking into account two-center processes in which the energy transfer and the photon absorption occur in one and the same elementary event. The dependences of the quasi-equilibrium concentrations of nonequilibrium charge carriers in the bands and of the occupancy of impurity states on the laser-radiation intensity are obtained. It is shown that the generation process of nonequilibrium electron–hole pairs is of a threshold nature. Depending on the concentration of impurity centers, the threshold intensities can be ~10{sup 5}–10{sup 7} W/cm{sup 2}, while the setting time of the quasi-equilibrium occupancies of electronic states is ~10–0.1 ns.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Room‐Temperature Ferromagnetism in MoTe 2 by Post‐Growth Incorporation of Vanadium Impurities
Abstract Post‐synthesis doping of 2D materials is demonstrated by incorporation of vapor‐deposited transition metals into a MoTe 2 lattice. Using this approach, vanadium doping of 2H‐MoTe 2 produces a 2D ferromagnetic semiconductor with a Curie temperature above room temperature (RT). Surprisingly, ferromagnetic properties can be induced with very low vanadium concentrations, down to ≈0.2%. The vanadium species introduced at RT are metastable, and annealing to above ≈500 K results in the formation of a thermodynamically favored impurity configuration that, however, exhibits reduced ferromagnetic properties. Doping with titanium, instead of vanadium, shows a similar incorporation behavior, but no ferromagnetism is induced in MoTe 2 . This indicates that the type of impurities in addition to their atomic configuration is responsible for the induced magnetism. The interpretation of the experimental results is consistent with ab initio calculations, which confirm that the proposed vanadium impurity configurations exhibit magnetic moments, in contrast to the same configurations with titanium impurities. This study illustrates the possibility to induce ferromagnetic properties in layered van der Waals semiconductors by controlled magnetic impurity doping and thus to add magnetic functionalities to 2D materials.
Coelho, Paula Mariel↗
Dynamic measurement of impurity ion transport in runaway electron plateaus in DIII-D
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Hollmann, E. M.↗
Distribution of impurity states and charge transport in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} nanocomposites
Energy filtering of charge carriers in a semiconducting matrix using atomically coherent nanostructures can lead to a significant improvement of the thermoelectric figure of merit of the resulting composite. In this work, several half-Heusler/full-Heusler (HH/FH) nanocomposites with general compositions Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (0≤x≤0.15 and y=0.005, 0.01 and 0.025) were synthesized in order to investigate the behavior of extrinsic carriers at the HH/FH interfaces. Electronic transport data showed that energy filtering of carriers at the HH/FH interfaces in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} samples strongly depends on the doping level (y value) as well as the energy levels occupied by impurity states in the samples. For example, it was found that carrier filtering at HH/FH interfaces is negligible in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (y=0.01 and 0.025) composites where donor states originating from Sb dopant dominate electronic conduction. However, we observed a drastic decrease in the effective carrier density upon introduction of HH/FH interfaces for the mechanically alloyed Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 0.995}Sb{sub 0.005} samples where donor states from unintentional Fe impurities contribute the largest fraction of conduction electrons. This work demonstrates the ability to synergistically integrate the concepts of doping and energy filtering through nanostructuring for the optimization of electronic transport in semiconductors. - Graphical abstract: Electronic transport in semiconducting half-Heusler (HH) matrices containing full-Heusler (FH) nanoinclusions strongly depends on the energy distribution of impurity states within the HH matrix with respect to the magnitude of the potential energy barrier at the HH/FH interfaces. - Highlights: • Coherent nanostructures enhanced thermoelectric behavior of half-Heusler alloys. • Nanostructures act as energy filter of carriers at the HH/FH interfaces. • Carrier filtering depends on the energy levels of impurity states in the samples.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗