Triboelectric Nanogenerator Tree for Harvesting Wind Energy and Illuminating in Subway Tunnel
Not provided.
Materials Science↗
SEARCH · Engineering Papers
Results for “ILLUMINATION”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Intrinsically stable organic solar cells under high-intensity illumination
Organic photovoltaic cells are now approaching commercially viable efficiencies, particularly for applications that make use of their unique potential for flexibility and semitransparency. However, their reliability remains a major concern, as even the most stable devices reported so far degrade within only a few years. This has led to the belief that short operational lifetimes are an intrinsic disadvantage of devices that are fabricated using weakly bonded organic materials—an idea that persists despite the rapid growth and acceptance of organic light-emitting devices, which can achieve lifetimes of several million hours9. Here we study an extremely stable class of thermally evaporated single-junction organic photovoltaic cells. We accelerated the aging process by exposing the packaged cells to white-light illumination intensities of up to 37 Suns. The cells maintained more than 87 percent of their starting efficiency after exposure for more than 68 days. The degradation rate increases superlinearly with intensity, leading to an extrapolated intrinsic lifetime, T 80 , of more than 4.9 × 10 7 hours, where T 80 is the time taken for the power conversion efficiency to decrease to 80 per cent of its initial value. This is equivalent to 27,000 years outdoors. Additionally, we subjected a second group of organic photovoltaic cells to 20 Suns of ultraviolet illumination (centred at 365 nanometres) for 848 hours, a dose that would take 1.7 × 10 4 hours (9.3 years) to accumulate outdoors. No efficiency loss was observed over the duration of the test. Overall, we find that organic solar cells packaged in an inert atmosphere can be extremely stable, which is promising for their future use as a practical energy generation technology.
14 SOLAR ENERGY↗
Chromosome-level genome assembly and transcriptome of the green alga Chromochloris zofingiensis illuminates astaxanthin production
Microalgae have potential to help meet energy and food demands without exacerbating environmental problems. There is interest in the unicellular green alga Chromochloris zofingiensis, because it produces lipids for biofuels and a highly valuable carotenoid nutraceutical, astaxanthin. Here, to advance understanding of its biology and facilitate commercial development, we present a C. zofingiensis chromosome-level nuclear genome, organelle genomes, and transcriptome from diverse growth conditions. The assembly, derived from a combination of short- and long-read sequencing in conjunction with optical mapping, revealed a compact genome of ~58 Mbp distributed over 19 chromosomes containing 15,274 predicted protein-coding genes. The genome has uniform gene density over chromosomes, low repetitive sequence content (~6%), and a high fraction of protein-coding sequence (~39%) with relatively long coding exons and few coding introns. Functional annotation of gene models identified orthologous families for the majority (~73%) of genes. Synteny analysis uncovered localized but scrambled blocks of genes in putative orthologous relationships with other green algae. Two genes encoding beta-ketolase (BKT), the key enzyme synthesizing astaxanthin, were found in the genome, and both were up-regulated by high light. Isolation and molecular analysis of astaxanthin-deficient mutants showed that BKT1 is required for the production of astaxanthin. Moreover, the transcriptome under high light exposure revealed candidate genes that could be involved in critical yet missing steps of astaxanthin biosynthesis, including ABC transporters, cytochrome P450 enzymes, and an acyltransferase. Finally, the high-quality genome and transcriptome provide insight into the green algal lineage and carotenoid production.
60 APPLIED LIFE SCIENCES↗
Temperature-dependent diffuse reflectance spectroscopy of plasma-sprayed Cr-doped α-alumina using supercontinuum laser illumination and CO_2 laser heating
Not Available
Brupbacher, Michael C. (ORCID:000000024821090X)↗
First Neutron Edge-Illumination (Structured Illumination) Imaging at Oak Ridge National Laboratory CG-1D Beamline.
Abstract not provided.
Vincent, Michael D.↗
Understanding and Advancing Bifacial Thin Film Solar Cells under Dual Illumination
There is a great deal of interest in increasing the energy yield from thin film solar cells by implementing bifacial operation. However, deleterious band bending and high interface recombination at the back transparent electrode can cause problems. Herein, it is investigated how bifacial thin film devices perform when illuminated through the front, back, and simultaneously through both interfaces using numerical modeling. It is shown that the downward band bending near the back interface is reduced during illumination when the carrier concentration is low. This effect is not found when the doping is relatively high, but the minority carrier distribution is still modified. Under either condition, the power generated under bifacial illumination exceeds the sum of the power generated when the illumination is solely from the back or the front. It is also shown that the back-illuminated device performance is independent of the angle at which the light enters the back of the device, which provides accommodation for scattered light. Finally, the power enhancement is calculated for bifacial devices relative to front-illuminated devices, and is shown that any significant loss in frontside power generation is difficult to overcome with back illumination under real-world albedo conditions.
CdTe↗
Detection of sub-500-μm cracks in multicrystalline silicon wafer using edge-illuminated dark-field imaging to enable thin solar cell manufacturing
High capital expenditures associated with manufacturing thin silicon wafers make it difficult for the industry to scale up and prevent novel technologies from entering the market. Thin wafers fail largely due to breakage during solar cell processing and handling. One of the root causes for breakage is sub-mm edge cracks in the silicon wafer, and these cracks cannot be reliably detected by most commercially-available crack detection tools. In this work, we first investigate the correlation between wafer thickness and critical crack length, and explain the importance of detecting sub-500-μm edge cracks as the wafer thickness is reduced. Secondly, we extend our previous work of micro-crack detection to demonstrate an edge illumination technique using a near-infrared laser to image edge cracks less than 500 μm in length in multicrystalline silicon. Thirdly, we investigate two fundamental edge illumination mechanisms based on dark-field imaging; namely, direct and vicinal illumination. We will then compare these methods to a state-of-the-art rear illumination method. The advantages and disadvantages of both illumination methods are presented and provide an in-depth analysis of light-crack interaction. In particular, we find that the robustness of vicinal illumination is due to diffuse reflectance. The diffuse reflectance has less dependence on crack configurations, while direct illumination has more dependence on the crack configurations because it utilizes specular reflectance. Our results show that our proposed prototype can detect sub-mm edge cracks in multicrystalline silicon wafers, which is an important step in enabling thin silicon wafer manufacturing.
14 SOLAR ENERGY↗
Correlation of the Structure with Performance in MEH-PPV/dPS Thin Films Illuminated during Processing
Thin films containing conjugated polymers have been used in a wide array of optoelectronic devices, and much research has focused on the conformation of the conjugated polymer as a key aspect to tuning the performance of the resulting devices. White light exposure has been studied as a post-processing method to alter the film’s morphology and photoluminescence (PL) in systems composed of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and polystyrene (PS). To date, there have been few studies that correlate the changes in the depth profile with the PL performance of MEH-PPV/PS films. This study is designed to address this gap in knowledge. Thin films of MEH-PPV/dPS annealed above the glass transition temperatures (T g ) in an illuminated environment led to lower PL than that found in annealed samples that are not illuminated. However, at higher MEH-PPV loading in the blend film, the extent of variation of PL with illumination diminished. Additionally, time-of-flight secondary ion mass spectrometry and small-angle neutron scattering document the three-dimensional morphology of the films under illumination conditions, which are correlated with the changes in PL. Illumination during annealing compressed MEH-PPV-rich layers in the thin film blends at low loadings of MEH-PPV (below 10 wt %) but resulted in significant in-plane phase separation at higher loadings (above 15 wt %). Both changes increase interchain interactions and lower the PL of the illuminated samples. The changes in the depth profile significantly alter the PL of the films, while the in-plane phase separation affected the optoelectronic properties to a lesser degree. This work, therefore, provides insights into how illumination and film composition can be utilized to predictably alter the structure and optoelectronic performance of conjugated polymer blend films.
36 MATERIALS SCIENCE↗
Simulative Prediction of Solar Illuminance and Application of the Du-Sharples Model in Estimating Adapted Daylighting Metrics for an Urban Environment
The practice of daylighting in indoor spaces can significantly reduce electricity consumption and carbon emissions, improve human productivity, and enhance mood and cognitive perception. This work discussed the recent developments in daylighting science and practice, computed the periodic variations in average diurnal daylight levels for each month, quantified in terms of global horizontal illuminance and diffuse horizontal illuminance, for Kolkata, India, a city with tropical wet and dry climate, with two empirical luminous efficacy models of estimating solar illuminance, and assessed daylighting metrics with the Du-Sharples model. A program was formulated that could compute and generate daylight data with monthly-hourly solar irradiation data and the Du-Sharples model was utilized to predict dirt-corrected daylighting metrics for three glazing transmittance values and five elemental carbon deposition levels on glazing material. The highest monthly average global horizontal illuminance is recorded in April (64.05 klx for Littlefair model and 66.82 klx for Muneer-Kinghorn model) and the highest monthly average diffuse horizontal illuminance is recorded in July (33.23 klx for Littlefair model and 30.63 klx for Muneer-Kinghorn model). Further, the computed yearly average global and diffuse horizontal illuminance levels agree well with a previous study that applied the Perez model. Yearly average horizontal work surface illuminance level remained >1.5 klx for window-towall area ratio >30 %. The approach adopted in this work and the temporal variation charts of computed exterior daylight level data may assist building service engineers, architects, and indoor lighting practitioners in making informed policy decisions at different stages of building planning.
Engineering↗
Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches
Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.
36 MATERIALS SCIENCE↗
Mutually promoting or constraining? Disentangling the superimposed effect of velocity and illuminance on fish motion in low-velocity flows with a novel metric
Global climate change, species invasion, and human activities such as the construction of hydraulic facilities are contributing to the worldwide degradation of fish stocks. As a pivotal environmental factor that affects fish migration and population distribution, low-velocity flow has not drawn enough attention despite its extensive presence in various ecoregions. Herein, to understand the behavioural profiles of fish in low-velocity flow, we examined the motility and swimming performance of two representative cyprinids, grass carp (GC, Ctenopharyngodon idella) and silver carp (SC, Hypophthalmichthys molitrix), under the combined effect of different flow velocities and illuminance ranges. The two species were exposed to two flow velocities (0.15 and 0.25 m/s) and three illuminance ranges (100.0 – 0.9 lx, 300.0 – 2.5 lx, and 700.0 – 4.9 lx). A novel behavioural metric, composed of light preference, cruising swimming speed, rheotaxis index (RI), swimming stability (SS), and the probability of moving forwards/backwards over a certain distance (PM f -0.1 and PM b -0.1), was developed to depict the motion strategy of fish fully. By investigating the individual distribution of the fish in light gradient, we confirmed the scototaxis of GC and found the oscillating light preference in SC that changed from 84.4 – 10.2 lx to 6.0 – 2.1 lx and disappeared with increasing illuminance. At the given velocities, the RI and SS increased in both species with a faster flow, and SC was more forward-prone and stable than GC. Despite its fluctuating light preference, the higher illuminances heightened the RI and SS in SC; while in GC, higher illuminances inhibited the SS and had no impact on the RI. The results of PM f -0.1 and PM b -0.1 indicated that a higher flow velocity could facilitate temporary upstream swimming in both species, while illuminance could promote the same effect in SC only. Finally, our study proposed possible moving manoeuvres in fine-scale spatio-temporal scenarios such as attraction flow and untraditional passages and provides valuable insights into fish community dynamics, laying the groundwork for alleviating the threat from invasive species and for future fish population recovery.
59 BASIC BIOLOGICAL SCIENCES↗
Artificial illumination identification from an unmanned aerial vehicle
Artificial illumination identification within images is a useful tool for many applications. Performing such identification allows for an estimation of the illumination source spectrum, which in turn can be used for additional applications ranging from spectral detection and exploitation to statistics about nighttime light usage. Illumination identification has been performed in laboratory settings but not from an unmanned aerial vehicle (UAV) platform. Here, we test the feasibility of using a UAV and commercial off-the-shelf multispectral imaging sensor to perform such artificial illumination identification through linear discriminant analysis using nighttime UAV images. The results are very promising, showing source classification accuracies of 83.3%, 92.3%, 100%, and 100% for the incandescent, light-emitting diode, high pressure sodium, and metal halide illumination sources, respectively. We show that the information gained from the source identification can be further used to inform additional analysis, such as spectral identification. The high resolution of UAV imaging techniques combined with the knowledge of the illumination source can lead to better exploitation of such nighttime data for many applications.
42 ENGINEERING↗
Effect of Illumination Area on the Ultrafast Temporal Response of MSM GaN Photodiodes
We investigate the influence of spatial illumination profiles on the temporal response of metal–semiconductor–metal GaN photodiodes. Using both simulation and experimental measurements, we compare the response curves under two scenarios: illumination confined to the active area between electrodes and extended illumination beyond the contacts. The results show that limiting the beam illumination to the active region significantly sharpens the response, reducing the long decay tails associated with slow carrier drift from peripheral regions. As a result, the experimental data closely match simulation predictions, confirming that illumination geometry plays a critical role in optimizing photodiode performance for ultrafast detection applications.
Carrier drift time↗
Quantitative comparison of organic photovoltaic bulk heterojunction photostability under laser illumination
The photostability of bulk heterojunction organic photovoltaic films containing a polymer donor and a fullerene-derivative acceptor was examined using resonance Raman spectroscopy and controlled laser power densities. The polymer donors were poly(3-hexylthiophene-2,5-diyl) (P3HT), poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7). Four sample preparation methods were studied: (i) thin or (ii) thick films with fast solvent evaporation under nitrogen, (iii) thick films with slow solvent evaporation under nitrogen, and (iv) thin films dried under nitrogen followed by thermal annealing. Polymer order was assessed by monitoring a Raman peak’s full width at half-maximum and location as a function of illumination time and laser power densities from 2.5 × 10 3 to 2.5 × 10 5 W cm –2 . Resonance Raman spectroscopy measurements show that before prolonged illumination, PCDTBT and PTB7 have the same initial order for all preparation conditions, while P3HT order improves with slow solvent drying or thermal annealing. All films exhibited changes to bulk heterojunction structure with 2.5 × 10 5 Wcm –2 laser illumination as measured by resonance Raman spectroscopy, and atomic force microscopy images show evidence of sample heating that affects the polymer over an area greater than the illumination profile. Furthermore, photostability data are important for proper characterization by techniques involving illumination and the development of devices suitable for real-world applications.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Asymptotic theory of double layer and shielding of electric field at the edge of illuminated plasma
The method of matched asymptotic expansions is applied to the problem of a collisionless plasma generated by UV illumination localized in a central part of the plasma in the limiting case of small Debye length λ{sub D}. A second-approximation asymptotic solution is found for the double layer positioned at the boundary of the illuminated region and for the un-illuminated plasma for the plane geometry. Numerical calculations for different values of λ{sub D} are reported and found to confirm the asymptotic results. The net integral space charge of the double layer is asymptotically small, although in the plane geometry it is just sufficient to shield the ambipolar electric field existing in the illuminated region and thus to prevent it from penetrating into the un-illuminated region. The double layer has the same mathematical nature as the intermediate transition layer separating an active plasma and a collisionless sheath, and the underlying physics is also the same. In essence, the two layers represent the same physical object: a transonic layer.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Illumination-induced modulation of conductivity and Gunn oscillation properties in epitaxial GaAs
In this work, we illuminate a gallium arsenide (GaAs) Gunn device and study the light-induced changes of Gunn oscillation properties. We observe that illumination leads to the modulation of the Gunn threshold voltage, the Gunn oscillation magnitude, and the coherency of Gunn oscillation, with the nature of the modulation being closely related to the position of illumination on the device. These effects are attributed to the generation of optically excited carriers, which results in the modulation of conductivity and the electric field profile along the device. The finite element method is used to simulate the change of the field profile of the Gunn device caused by illumination. We also report an unexpected phenomenon of Gunn oscillation property manipulation with an optical chopper. In addition, wavelength-dependent, power-dependent, and pulsed illumination measurements are performed to help with further understanding the observations.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Deep level defects in dilute GaAsBi alloys grown under intense UV illumination
Dilute GaAs1-xBix alloys exhibiting narrow band edge photoluminescence (PL) were recently grown by molecular beam epitaxy (MBE) with the growth surface illuminated by intense UV radiation. To investigate whether the improved optical quality of these films results from a reduction in the concentration of deep level defects, p+/n and n+/p junction diodes were fabricated on both the illuminated and dark areas of several samples. Deep Level Transient Spectroscopy (DLTS) measurements show that the illuminated and dark areas of both the n- and p-type GaAs1-xBix epi-layers have similar concentrations of near mid-gap electron and hole traps, in the 1015 cm-3 range. Thus the improved PL spectra cannot be explained by a reduction in non-radiative recombination at deep level defects. We note that carrier freeze-out above 35 K is significantly reduced in the illuminated areas of the p-type GaAs1-xBix layers compared to the dark areas, allowing the first DLTS measurements of defect energy levels close to the valence band edge. These defect levels may account for differences in the PL spectra from the illuminated and dark areas of un-doped layers with a similar Bi fraction.
14 SOLAR ENERGY↗
A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination
It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗