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Failure detection technique is based upon input-output ratios, which is independent of inverter loading. Since inverter has fixed relationship between V-in/V-out and I-in/I-out, failure detection criteria are based on this ratio, which is simply inverter transformer turns ratio, K, equal to primary turns divided by secondary turns.
InI crystallizes in the orthorhombic Cmcm space group. The structure is two-dimensional and consists of two InI sheets oriented in the (0, 1, 0) direction. In1+ is bonded to five equivalent I1- atoms to form a mixture of corner and edge-sharing InI5 square pyramids. There are one shorter (3.28 Å) and four longer (3.50 Å) In–I bond lengths. I1- is bonded to five equivalent In1+ atoms to form a mixture of corner and edge-sharing IIn5 square pyramids.
InI3 crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of two InI3 clusters. In3+ is bonded to four I1- atoms to form edge-sharing InI4 tetrahedra. There are two shorter (2.69 Å) and two longer (2.89 Å) In–I bond lengths. There are three inequivalent I1- sites. In the first I1- site, I1- is bonded in a single-bond geometry to one In3+ atom. In the second I1- site, I1- is bonded in an L-shaped geometry to two equivalent In3+ atoms. In the third I1- site, I1- is bonded in a single-bond geometry to one In3+ atom.
InI4 is Silicon tetrafluoride-like structured and crystallizes in the cubic Fm-3c space group. The structure is zero-dimensional and consists of twenty-four InI4 clusters. In is bonded in a tetrahedral geometry to four equivalent I atoms. All In–I bond lengths are 2.76 Å. I is bonded in a single-bond geometry to one In atom.