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Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single dislocation sensitivity via noise reduction

High resolution electron backscatter diffraction (HREBSD), an SEM-based diffraction technique, may be used to measure the lattice distortion of a crystalline material and to infer the geometrically necessary dislocation content. Uncertainty in the image correlation process used to compare diffraction patterns leads to an uneven distribution of measurement noise in terms of the lattice distortion, which results in erroneous identification of dislocation type and density. This work presents a method of reducing noise in HREBSD dislocation measurements by removing the effect of the most problematic components of the measured distortion. The method is then validated by comparing with TEM analysis of dislocation pile-ups near a twin boundary in austenitic stainless steel and with ECCI analysis near a nano-indentation on a tantalum oligocrystal. Finally, the HREBSD dislocation microscopy technique is able to resolve individual dislocations visible in TEM and ECCI and correctly identify their Burgers vectors.

36 MATERIALS SCIENCE↗

Determining Stress in Metallic Conducting Layers of Microelectronics Devices Using High Resolution Electron Backscatter Diffraction and Finite Element Analysis

Delayed failure due to stress voiding is a concern with some aging microelectronics, as these voids can grow large enough to cause an open circuit. Local measurements of stress in the metallic layers are crucial to understanding and predicting this failure, but such measurements are complicated by the fact that exposing the aluminum conducting lines will relieve most of their stress. In this study, we instead mechanically thin the device substrate and measure distortions on the thinned surface using high resolution electron backscatter diffraction (HREBSD). These measurements are then related to the stresses in the metallic layers through elastic simulations. This study found that in legacy components that had no obvious voids, the stresses were comparable to the theoretical stresses at the time of manufacture (≈300 MPa). Distortion fields in the substrate were also determined around known voids, which may be directly compared to stress voiding models. In conclusion, the technique presented here for stress determination, HREBSD coupled with finite element analysis to infer subsurface stresses, is a valuable tool for assessing failure in layered microelectronics devices.

HREBSD↗

Fundamental Study of Fatigue Crack Initiation at Grain and Twin Boundaries in Austentic Stainless Steel (Final Technical Report)

The overarching goal of this project was to understand the dislocation-based mechanisms driving fatigue crack initiation at grain and twin boundaries. The hypothesis of the work is that dislocation structures equivalent to persistent slip bands (PSBs) form in the boundaries, leading to local stress concentrations and fatigue crack initiation. The sub-goals associated with this work include: • Understanding the evolution of the dynamic stress state and dislocation density surrounding PSB/grain boundary interactions. This will require the development of new techniques that couple high resolution electron backscatter diffraction (HREBSD) with in situ scanning electron microscopy (SEM) deformation. • Uncover the mechanisms by which dislocations are accommodated in grain and twin boundaries during fatigue. The proposed approach here is to conduct in situ transmission electron microscopy (TEM) deformation experiments on fatigued samples. • Establish correlations between microstructure, deformation accommodation, and crack initiation across time and length scales. This work primarily focuses on understanding fatigue crack initiation in austenitic stainless steels, though promising work by an undergraduate researcher extended the work to high purity Al.

42 ENGINEERING↗