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PbH crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Pb is bonded in a distorted single-bond geometry to four equivalent H atoms. There are one shorter (2.25 Å) and three longer (2.51 Å) Pb–H bond lengths. H is bonded in a distorted rectangular see-saw-like geometry to four equivalent Pb atoms.
Python-implementation of the Hunter-Preston strength model, but with generalized drag coefficient B. For details, see D. N. Blaschke, A. Hunter, and D. L. Preston, Int. J. Plast. 131 (2020) 102750. This code was used to generate most of the figures in this paper.
In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3x1017 cm-3–1x1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.
The goal of this project was to establish a cost-effective and scalable production approach of feedstock (CdTe and Cd-Se-Te) for the solar industry, with the material properties necessary to improve performance and reduce costs. The primary focus was to develop a CdTe synthesis and growth process that pushed the p-type doping of CdTe to previously unattainable levels, while creating a path to scalable production. In our approach, the first step was bulk CdTe growth doped with Group V dopants (P, As, and Sb) using the Modified Vertical Bridgman (MVB) and high Pressure Bridgman (HPB) techniques, and the second step was examination of films deposited by Close-Spaced Sublimation (CSS) and Vapor Transport Deposition (VTD) using this specialized feedstock.