Determining Quasi-Equilibrium Electron and Hole Distributions of Plasmonic Photocatalysts Using Photomodulated X-ray Absorption Spectroscopy
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
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Results for “HOLE DISTRIBUTION”
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Searching for ultra-light bosons and constraining black hole spin distributions with stellar tidal disruption events
Stars that pass close to the supermassive black holes located in the center of galaxies can be disrupted by tidal forces, leading to flares that are observed as bright transient events in sky surveys. The rate for these events to occur depends on the black hole spins, which in turn can be affected by ultra-light bosons due to superradiance. We perform a detailed analysis of these effects and show that searches for stellar tidal disruptions have the potential to uncover the existence of ultra-light bosons. In particular, we find that upcoming stellar tidal disruption rate measurements by the Vera Rubin Observatory’s Legacy Survey of Space and Time can be used to either discover or rule out bosons with masses ranging from 10 –20 to 10 –18 eV. Our analysis also indicates that these measurements may be used to constrain a variety of supermassive black hole spin distributions and determine if close-to maximal spins are preferred.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Carrier-Specific Hot Phonon Bottleneck in CH 3 NH 3 PbI 3 Revealed by Femtosecond XUV Absorption
Femtosecond carrier cooling in the organohalide perovskite semiconductor CH 3 NH 3 PbI 3 is measured using extreme ultraviolet (XUV) and optical transient absorption spectroscopy. XUV absorption between 44 and 58 eV measures transitions from the I 4d core to the valence and conduction bands and gives distinct signals for hole and electron dynamics. The core-to-valence-band signal directly maps the photoexcited hole distribution and provides a quantitative measurement of the hole temperature. The combination of XUV and optical probes reveals that upon excitation at 400 nm, the initial hole distribution is 3.5 times hotter than the electron distribution. At an initial carrier density of 1.4 × 10 20 cm –3 both carriers are subject to a hot phonon bottleneck, but at 4.2 × 10 19 cm –3 the holes cool to less than 1000 K within 400 fs. Finally, this result places significant constraints on the use of organohalide perovskites in hot-carrier photovoltaics.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe 2 with Femtosecond Core-Level Spectroscopy
In this study, we employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe 2 semiconductor. By interrogating the valence electronic structure via localized Te 4 d (39-46 eV) and Mo 4 p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A 1g (5.1 THz) and in-plane E 1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A 1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe 2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Dynamics of carrier injection through V-defects in long wavelength GaN LEDs
The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm 2 /s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.
Crystallographic defects↗
Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects
The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.
Current crowding↗
Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs
The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.
42 ENGINEERING↗
Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence
The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.
Electroluminescence↗
Nonlinear electronic excitation in water under proton irradiation: a first principles study
Nonlinear dynamics of electronic excitation bridge physical and physicochemical stages of water radiolysis under proton irradiation, a multi-scale physicochemical process that is fundamental to a wide range of technological and medical applications of high-energy protons. We study the spatial and temporal changes to the excited holes generated in this ionization event using first-principles theory simulation. A significant majority of holes are formed in the immediate vicinity of the irradiating proton paths, and these holes decay rapidly, while secondary excitations are simultaneously induced in regions farther away. While the hole population remains constant, the observed spatially spreading hole distribution cannot be described as concentration-dependent diffusion current. Compared to the primary excitation induced by the irradiating protons, the secondary excitation farther away is somewhat less energetic. Here, the first-principles theory simulation here provides a detailed description of how the primary excitation by proton radiation precedes the formation of cationic holes, which undergo ultrafast chemical processes in water radiolysis.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Imaging moiré excited states with photocurrent tunnelling microscopy
Moiré superlattices provide a highly tuneable and versatile platform to explore novel quantum phases and exotic excited states ranging from correlated insulators to moiré excitons. Scanning tunnelling microscopy has played a key role in probing microscopic behaviours of the moiré correlated ground states at the atomic scale. However, imaging of quantum excited states in moiré heterostructures remains an outstanding challenge. In this report we develop a photocurrent tunnelling microscopy technique that combines laser excitation and scanning tunnelling spectroscopy to directly visualize the electron and hole distribution within the photoexcited moiré exciton in twisted bilayer WS 2 . The tunnelling photocurrent alternates between positive and negative polarities at different locations within a single moiré unit cell. This alternating photocurrent originates from the in-plane charge transfer moiré exciton in twisted bilayer WS 2 , predicted by our GW-Bethe–Salpeter equation calculations, that emerges from the competition between the electron–hole Coulomb interaction and the moiré potential landscape. Our technique enables the exploration of photoexcited non-equilibrium moiré phenomena at the atomic scale.
36 MATERIALS SCIENCE↗
Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser
Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d5/2 core level (M5-edge, 572–577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1–2 ps timescale, which is interpreted as electron–hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.
2D materials↗
Remnant masses from 1 D + core-collapse supernovae simulations: Bimodal neutron star mass distribution and black holes in the low-mass gap
Not provided.
Astronomy & Astrophysics↗
A possible mass distribution of primordial black holes implied by LIGO-Virgo
The LIGO-Virgo Collaboration has so far detected around 90 black holes, some of which have masses larger than what were expected from the collapse of stars. The mass distribution of LIGO-Virgo black holes appears to have a peak at ~ 30 M ⊙ and two tails on the ends. By assuming that they all have a primordial origin, we analyze the GWTC-1 (O1&O2) and GWTC-2 (O3a) datasets by performing maximum likelihood estimation on a broken power law mass function f ( m ), with the result f ∝ m 1.2 for m < 35 M ⊙ and f ∝ m -4 for m > 35 M ⊙ . This appears to behave better than the popular log-normal mass function. Surprisingly, such a simple and unique distribution can be realized in our previously proposed mechanism of PBH formation, where the black holes are formed by vacuum bubbles that nucleate during inflation via quantum tunneling. Moreover, this mass distribution can also provide an explanation to supermassive black holes formed at high redshifts.
Astronomy & Astrophysics↗
Elucidating the Influence of Side-Chain Circular Distribution on the Crack Onset Strain and Hole Mobility of Near-Amorphous Indacenodithiophene Copolymers
Abstract not provided
Sommerville, Parker J.W.↗
Synthesis and electronic characterization of Nd2−xSrxNiO4 thin films (0≤x≤1.4)
Layered nickelates have been studied extensively over the last three decades due to their structural similarities to the high-Tc superconducting cuprates. Using reactive oxide molecular beam epitaxy (MBE), we synthesize Nd2−xSrxNiO4 thin films for x=0−1.4 to probe the properties and electronic structure as a function of hole doping. The samples with lower doping show semiconducting behavior across the temperatures probed with an onset of metallic conductivity at x=1.4. We also present polarization-dependent O K and Ni L2,3 x-ray absorption spectra to track the evolution of the oxygen-nickel hybridization, distribution of holes between O 2p and Ni 3d states and the nickel oxidation state across the series. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a Fermi surface that comprises a cupratelike hole pocket of dx2−y2 character with an additional electron pocket of d3z2−r2 character at Γ. The emergence of a quasiparticle peak at the Fermi vector for x=1.4 corroborates the insulator-to-metal transition at x∼1. Finally, observe a fully two-dimensional Fermi surface with no momentum-dependent pseudogap, in contrast to measurements of the related bulk compound, Eu0.9Sr1.1NiO4.
Taylor, Nicole K↗
Femtosecond X-ray Spectroscopy Directly Quantifies Transient Excited-State Mixed Valency
Quantifying charge delocalization associated with short-lived photoexcited states of molecular complexes in solution remains experimentally challenging, requiring local element specific femtosecond experimental probes of time-evolving electron transfer. In this study, we quantify the evolving valence hole charge distribution in the photoexcited charge transfer state of a prototypical mixed valence bimetallic iron–ruthenium complex, [(CN) 5 Fe II CNRu III (NH 3 ) 5 ]-, in water by combining femtosecond X-ray spectroscopy measurements with time-dependent density functional theory calculations of the excited-state dynamics. We estimate the valence hole charge that accumulated at the Fe atom to be 0.6 ± 0.2, resulting from excited-state metal-to-metal charge transfer, on an ~ 60 fs time scale. Our combined experimental and computational approach provides a spectroscopic ruler for quantifying excited-state valency in solvated complexes.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
[(MeCN)Ni(CF 3 ) 3 ] - and [Ni(CF 3 ) 4 ] 2– : Foundations toward the Development of Trifluoromethylations at Unsupported Nickel
Nickel anions [(MeCN)Ni(CF 3 ) 3 ] - and [Ni(CF 3 ) 4 ] 2– were prepared by the formal addition of 3 and 4 equiv, respectively, of AgCF 3 to [(dme)NiBr 2 ] in the presence of the [PPh 4 ] + counterion. Detailed insights into the electronic properties of these new compounds were obtained through the use of density functional theory (DFT) calculations, spectroscopy-oriented configuration interaction (SORCI) calculations, X-ray absorption spectroscopy, and cyclic voltammetry. The data collectively show that trifluoromethyl complexes of nickel, even in the most common oxidation state of nickel(II), are highly covalent systems whereby a hole is distributed on the trifluoromethyl ligands, surprisingly rendering the metal to a physically more reduced state. In the cases of [(MeCN)Ni(CF 3 ) 3 ] - and [Ni(CF 3 ) 4 ] 2- , these complexes are better physically described as d 9 metal complexes. [(MeCN)Ni(CF 3 ) 3 ] - is electrophilic and reacts with other nucleophiles such as phenoxide to yield the unsupported [(PhO)Ni(CF 3 ) 3 ] 2– salt, revealing the broader potential of [(MeCN)Ni(CF 3 ) 3 ] - in the development of “ligandless” trifluoromethylations at nickel. Proof-in-principle experiments show that the reaction of [(MeCN)Ni(CF 3 ) 3 ] - with an aryl iodonium salt yields trifluoromethylated arene, presumably via a high-valent, unsupported, and formal organonickel(IV) intermediate. Evidence of the feasibility of such intermediates is provided with the structurally characterized [PPh 4 ] 2 [Ni(CF 3 ) 4 (SO 4 )], which was derived through the two-electron oxidation of [Ni(CF 3 ) 4 ] 2– .
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Atom-Specific Probing of Electron Dynamics in an Atomic Adsorbate by Time-Resolved X-Ray Spectroscopy
The electronic excitation occurring on adsorbates at ultrafast timescales from optical lasers that initiate surface chemical reactions is still an open question. Here, in this work, we report the ultrafast temporal evolution of x-ray absorption spectroscopy (XAS) and x-ray emission spectroscopy (XES) of a simple well-known adsorbate prototype system, namely carbon (C) atoms adsorbed on a nickel [Ni(100)] surface, following intense laser optical pumping at 400 nm. We observe ultrafast (~100 fs) changes in both XAS and XES showing clear signatures of the formation of a hot electron-hole pair distribution on the adsorbate. This is followed by slower changes on a few picoseconds timescale, shown to be consistent with thermalization of the complete C/Ni system. Density functional theory spectrum simulations support this interpretation.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗