Determining Quasi-Equilibrium Electron and Hole Distributions of Plasmonic Photocatalysts Using Photomodulated X-ray Absorption Spectroscopy
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
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Results for “HOLE DISTRIBUTION”
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Aeroacoustics of supersonic porous plug-nozzle flows
The effects of porosity on attenuation of noise from short plug-nozzle flows have been studied. Porosity of 10 percent distributed over the whole surface and porosity of 4 percent distributed over the middle-third surface of the conical plug have been investigated. The porosity results in favorable modifications of the repetitive shock structures as revealed by the shadowgraphs of the flow. The acoustic data indicate a reduction of noise intensity levels up to 4 dB for the porous plugs as compared to the solid concial plug. The locally distributed holes (4 percent porosity) are found to give aeroacoustic performance comparable to those with holes distributed over the whole surface (10 percent porosity). Also, the solid conical plug-nozzle is noted to yield noise reductions up to 9 dB when compared to the conical convergent plug-nozzle. A proposed mechanism of shock modification in porous plug-nozzle. A supported by shadowgraphic records.
Dosanjh, D. S.↗
DE-1 observations of hole electron distribution functions and the cyclotron maser resonance
The hole electron distribution functions observed by the DE-1 satellite within inverted-V events at altitudes of between 9000 km and 15,000 km are examined as a possible free energy source for exciting Z-mode radiation through cyclotron maser resonance. In the DE-1 observations the hole distribution function had center velocities varying between 8000 km/s and 20,000 km/s, with the radii varying between 2000 km/s and 10,000 km/s. The observed distribution function is fitted by an exponential function around the center of the hole, and is used to calculate growth rates of Z-mode radiation. Growth rates as high as 0.001 of the electron gyrofrequency are obtained. It is also shown that the observed hole distribution functions can excite Z-mode radiation at wave frequencies slightly above the gyrofrequency, and wave propagation angles slightly below 90 deg in the source region. The results suggest that the hole distribution function could provide additional amplification for Z-mode waves in the auroral zone.
Lin, C. S.↗
Moment distributions around holes in symmetric composite laminates subjected to bending moments
An analytical investigation of the effects of holes on the moment distribution of symmetric composite laminates subjected to bending moments is described. A general, closed-form solution for the moment distribution of an infinite anisotropic plate is derived, and this solution is used to determine stress distributions both on the hole boundary and throughout the plate. Results are presented for several composite laminates that have holes and are subjected to either pure bending or cylindrical bending. Laminates with a circular hole or with an elliptical hole are studied. Laminate moment distributions are discussed, and ply stresses are described.
Prasad, C. B.↗
Searching for ultra-light bosons and constraining black hole spin distributions with stellar tidal disruption events
Stars that pass close to the supermassive black holes located in the center of galaxies can be disrupted by tidal forces, leading to flares that are observed as bright transient events in sky surveys. The rate for these events to occur depends on the black hole spins, which in turn can be affected by ultra-light bosons due to superradiance. We perform a detailed analysis of these effects and show that searches for stellar tidal disruptions have the potential to uncover the existence of ultra-light bosons. In particular, we find that upcoming stellar tidal disruption rate measurements by the Vera Rubin Observatory’s Legacy Survey of Space and Time can be used to either discover or rule out bosons with masses ranging from 10 –20 to 10 –18 eV. Our analysis also indicates that these measurements may be used to constrain a variety of supermassive black hole spin distributions and determine if close-to maximal spins are preferred.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Carrier-Specific Hot Phonon Bottleneck in CH 3 NH 3 PbI 3 Revealed by Femtosecond XUV Absorption
Femtosecond carrier cooling in the organohalide perovskite semiconductor CH 3 NH 3 PbI 3 is measured using extreme ultraviolet (XUV) and optical transient absorption spectroscopy. XUV absorption between 44 and 58 eV measures transitions from the I 4d core to the valence and conduction bands and gives distinct signals for hole and electron dynamics. The core-to-valence-band signal directly maps the photoexcited hole distribution and provides a quantitative measurement of the hole temperature. The combination of XUV and optical probes reveals that upon excitation at 400 nm, the initial hole distribution is 3.5 times hotter than the electron distribution. At an initial carrier density of 1.4 × 10 20 cm –3 both carriers are subject to a hot phonon bottleneck, but at 4.2 × 10 19 cm –3 the holes cool to less than 1000 K within 400 fs. Finally, this result places significant constraints on the use of organohalide perovskites in hot-carrier photovoltaics.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Moment distributions around holes in symmetric composite laminates subjected to bending moments
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Prasad, C. B.↗
The effect of drilled holes on notch toughness
Effect of mechanically drilled hole distribution on notch strength of iron alloys
HOLE DISTRIBUTION↗
Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation
In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave-vector-dependent numerical transition rate formulation. The ionization transition rate is determined for each of the three valence bands, heavy, light, and split-off, using Fermi's golden rule with a two-body, screened Coulomb interaction. The dielectric function used within the calculation is assumed to be wave-vector-dependent. Calculations of the field-dependent impact ionization rate as well as the quantum yield are presented. It is found from both the quantum yield results and examination of the hole distribution function that the effective threshold energy for hole initiated impact ionization is relatively soft, similar to that predicted for the corresponding electron initiated ionization events occur more frequently than either heavy or split-offf initiated ionization events in bulk silicon over the applied electric field strengths examined here, 250-500 kV/cm. Conversely,in GaAs, the vast majority of hole initated ionization events originate from holes within the split-off band.
Oguzman, Ismail H.↗
Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe 2 with Femtosecond Core-Level Spectroscopy
In this study, we employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe 2 semiconductor. By interrogating the valence electronic structure via localized Te 4 d (39-46 eV) and Mo 4 p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A 1g (5.1 THz) and in-plane E 1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A 1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe 2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
The Latitudinal Distribution of Magnetic Holes in the Solar Wind
%T The Latitudinal Distribution of Magnetic Holes in the Solar Wind%A D. Winterhalter%A M. Neugebauer%A E. J. Smith%A A. Balogh%J American Geophysical Union, 1995 Spring Meeting%C Baltimore, Maryland%D May 29-June 2, 1995%K Interplanetary Magnetic Fields%K Solar Wind%U http://techreports.jpl.nasa.gov/1995/95-0554.pdf!
Interplanetary↗
Measuring radiation effects on MOS capacitors
Electron injection technique serves as powerful probe of trapped hole distribution after irradiation because it was determined that electrons only annihilate trapped holes. Other effects, such as other electron traps and interface state generation, are negligible in injection range used. Trap cross sections and densities indicate at least three trap species; interfacial species, dominant bulk species determined to tail off from silicon interface, and lower density and cross section species that may be distributed throughout bulk of oxide.
Bakowski, M.↗
Dynamics of carrier injection through V-defects in long wavelength GaN LEDs
The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm 2 /s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.
Crystallographic defects↗
Research on Supersonic Inlet Bleed
Phase I data results of the Fundamental Inlet Bleed Experiments project at NASA Glenn Research Center (GRC) are presented which include flow coefficient results for two single-hole boundary-layer bleed configurations. The bleed configurations tested are round holes at inclination angles of 90deg and 20deg both having length-to-diameter ratios of 2.0. Results were obtained at freestream Mach numbers of 1.33, 1.62, 1.98, 2.46, and 2.92 and unit Reynolds numbers of 0.984, 1.89, and 2.46 10(exp 7)/m. Approach boundary-layer data are presented for each flow condition and the flow coefficient results are compared to existing multi-hole data obtained under similar conditions. For the 90deg hole, the single and multi-hole distributions agree fairly well with the exception that under supercritical operation, the multi-hole data chokes at higher flow coefficient levels. This behavior is also observed for the 20deg hole but to a lesser extent. The 20deg hole also shows a markedly different characteristic at subcritical operation. Also presented are preliminary results of a Computational Fluid Dynamics (CFD) analysis of both configurations at the Mach 1.33 and a unit Reynolds number of 2.46 10(exp 7)/m. Comparison of the results shows the agreement to be very good.
Davis, David O.↗
Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects
The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.
Current crowding↗
Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs
The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.
42 ENGINEERING↗
Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence
The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.
Electroluminescence↗
Perforated-Layer Implementation Of Radio-Frequency Lenses
Luneberg-type radio-frequency dielectric lenses made of stacked perforated circular dielectric sheets, according to proposal. Perforation pattern designed to achieve required spatial variation of permittivity. Consists of round holes distributed across face of each sheet in "Swiss-cheese" pattern, plus straight or curved slots that break up outer parts into petals in "daisy-wheel" pattern. Holes and slots made by numerically controlled machining.
Dolgin, Benjamin P.↗