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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.

Sohel, Shahadat H.↗
DOE OSTI2017

GaP/GaNP Heterojunctions for Efficient Solar‐Driven Water Oxidation

The growth and characterization of an n‐GaP/i‐GaNP/p + ‐GaP thin film heterojunction synthesized using a gas‐source molecular beam epitaxy (MBE) method, and its application for efficient solar‐driven water oxidation is reported. The TiO 2 /Ni passivated n‐GaP/i‐GaNP/p + ‐GaP thin film heterojunction provides much higher photoanodic performance in 1 m KOH solution than the TiO 2 /Ni‐coated n‐GaP substrate, leading to much lower onset potential and much higher photocurrent. There is a significant photoanodic potential shift of 764 mV at a photocurrent of 0.34 mA cm −2 , leading to an onset potential of ≈0.4 V versus reversible hydrogen electrode (RHE) at 0.34 mA cm −2 for the heterojunction. The photocurrent at the water oxidation potential (1.23 V vs RHE) is 1.46 and 7.26 mA cm −2 for the coated n‐GaP and n‐GaP/i‐GaNP/p + ‐GaP photoanodes, respectively. The passivated heterojunction offers a maximum applied bias photon‐to‐current efficiency (ABPE) of 1.9% while the ABPE of the coated n‐GaP sample is almost zero. Furthermore, the coated n‐GaP/i‐GaNP/p + ‐GaP heterojunction photoanode provides a broad absorption spectrum up to ≈620 nm with incident photon‐to‐current efficiencies (IPCEs) of over 40% from ≈400 to ≈560 nm. The high low‐bias performance and broad absorption of the wide‐bandgap GaP/GaNP heterojunctions render them as a promising photoanode material for tandem photoelectrochemical (PEC) cells to carry out overall solar water splitting.

Kargar, Alireza↗
DOE OSTI2018

Electronic Structure and Band Alignment of LaMnO 3 /SrTiO 3 Polar/Nonpolar Heterojunctions

The behavior of polar LaMnO3 (LMO) thin films deposited epitaxially on non-polar SrTiO3(001) (STO) is dictated by both the LMO/STO band alignment and the chemistry of the Mn cation. Using in situ x-ray photoelectron spectros-copy (XPS), we directly measure the valence band offset (VBO) of LMO/STO heterojunctions as a function of thickness, and find that the VBO is 2.5 eV for thicker (= 3 u.c.) films. We find no evidence of a built-in potential in LMO films of any thickness. Measurements of the Mn valence by Mn L-edge x-ray absorption spectroscopy (XAS) and by spatially-resolved electron energy loss spectra in scanning transmission electron microscopy images (STEM-EELS) reveal that Mn2+ is present at the LMO surface, but not at the LMO/STO interface. These results are corroborated by DFT simula-tions that confirm a VBO of approximately 2.5 eV for both ideal and intermixed interfaces. We propose a model for the behavior of polar / non-polar LMO/STO heterojunctions in which the built-in potential is alleviated by the formation of oxygen vacancies at the LMO surface.

Kaspar, Tiffany C.↗
DOE OSTI2016

Enhanced photocatalytic and photoelectrochemical activities of reduced TiO 2-x /BiOCl heterojunctions

A key issue to design highly efficient photoelectrodes for hydrogen production is how to prohibit the rapid carrier recombination. In order to use the visible light and reduce the recombination of electrons and holes, reduced TiO 2-x /BiOCl heterojunctions are successfully synthesized and the photoelectrodes are assembled in this work. The effects of various Bi/Ti molar ratios on the structural, morphological, optical, photoelectrochemical and photocatalytic activities of the resultant samples are investigated systematically. The TiO 2-x nanoparticles contain Ti 3+ , Ti 2+ , and oxygen vacancies (Ov), while the BiOCl nanosheets exposed {001} facet. Ultraviolet–visible diffuse reflectance spectroscopy (UV–vis DRS) results indicate that the existence of Ti 3+ , Ti 2+ and Ov expand the light-response range. Linear scan voltammetry and electrochemical impedance spectroscopy results indicate that more efficient electron transportation is presented in the heterojunctions with the appropriate Bi/Ti molar ratio. Consequently, the reduced TiO 2-x /BiOCl heterojunction with the most appropriate Bi/Ti molar ratio exhibits a high photocurrent density of 0.755 mA cm -2 with photoconversion efficiency up to 0.634%, 10.5 and 22.6 times larger than that of pure TiO 2 and BiOCl. Furthermore, this heterojunction exhibit 48.38 and 12.54 times enhancement for the visible-light decomposition of rhodamine B compared with pure TiO 2 and BiOCl.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗