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DOE OSTI2020

Materials Data on H(WO3)4 by Materials Project

(WO3)8H2 is High-temperature superconductor-derived structured and crystallizes in the tetragonal I-42m space group. The structure is three-dimensional and consists of two dihydrogen molecules and one WO3 framework. In the WO3 framework, W+5.75+ is bonded to six O2- atoms to form corner-sharing WO6 octahedra. The corner-sharing octahedral tilt angles are 0°. There are a spread of W–O bond distances ranging from 1.83–2.08 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a linear geometry to two equivalent W+5.75+ atoms. In the second O2- site, O2- is bonded in a linear geometry to two equivalent W+5.75+ atoms.

36 MATERIALS SCIENCE↗

NASA NTRS1990

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗