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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Electronic Coherence and Coherent Dephasing in the Optical Control of Electrons in Graphene

Electronic coherence is of utmost importance for the access and control of quantum-mechanical solid-state properties. Using a purely electronic observable, the photocurrent, we measure a lower bound of the electronic coherence time of 22 ± 4 fs in graphene. The photocurrent is ideally suited to measure electronic coherence, as it is a direct result of coherent quantum-path interference, controlled by the delay between two ultrashort two-color laser pulses. The maximum delay for which interference between the population amplitude injected by the first pulse interferes with that generated by the second pulse determines the electronic coherence time. In particular, numerical simulations reveal that the experimental data yields a lower bound on the electronic coherence time, masked by coherent dephasing due to the broadband absorption in graphene. Overall, we expect that our results will significantly advance the understanding of coherent quantum control in solid-state systems ranging from excitation with weak fields to strongly driven systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Graphene nanoribbons for quantum electronics

Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials with a graphitic lattice structure. GNRs possess high mobility and current-carrying capability, sizeable bandgap and versatile electronic properties, which make them promising candidates for quantum electronic applications. In the past 5 years, progress has been made towards atomically precise bottom-up synthesis of GNRs and heterojunctions that provide an ideal platform for functional molecular devices, as well as successful production of semiconducting GNR arrays on insulating substrates potentially useful for large-scale digital circuits. With further development, GNRs can be envisioned as a competitive candidate material in future quantum information sciences. In this Perspective, we discuss recent progress in GNR research and identify key challenges and new directions likely to develop in the near future.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electric fields and substrates dramatically accelerate spin relaxation in graphene

Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, in this work, we use first-principles density-matrix (FPDM) dynamics simulations to show that interaction with electric fields and substrates strongly enhances spin relaxation through scattering with phonons. Consequently, the relaxation time at room temperature reduces from microseconds in free-standing graphene to nanoseconds in graphene on the hexagonal boron nitride (hBN) substrate, which is the order of magnitude typically measured in experiments. Further, inversion symmetry breaking by hBN introduces a stronger asymmetry in electron and hole spin lifetimes than predicted by the conventional D'yakonov-Perel' (DP) model for spin relaxation. Deviations from the conventional DP model are stronger for in-plane spin relaxation, resulting in out-of-plane to in-plane lifetime ratios much greater than 1/2 with a maximum close to the Dirac point. These FPDM results, independent of symmetry-specific assumptions or material-dependent parameters, also validate recent modifications of the DP model to explain such deviations. Overall, our results indicate that spin-phonon relaxation in the presence of substrates may be more important in graphene than typically assumed, requiring consideration for graphene-based spin technologies at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

An efficient computational framework for charge density estimation in twisted bilayer graphene

Electronic properties such as band structure and Fermi velocity in low-angle twisted bilayer graphene (TBG) are intrinsically dependent on the atomic structure. Rigid rotation between individual graphene layers provides an approximate description of the bilayer symmetry. Upon relaxation, in-plane displacement of the atoms in low angle TBG causes a change in the symmetry through the enlargement of the AB stacking regions and the reduction in size of AA and SP stacking regions. However, the effect of this in-plane relaxation on the charge density remains unexplored, because the necessary electronic structure calculations of such large supercells of low twist angle TBG are computationally infeasible. Therefore, we develop a computationally efficient framework that enables the exploration of the charge density symmetry of the low twist angle TBG. This framework is based on the Fourier representation of the charge density which presents high intensity Bragg peaks. Here we find that with the decrease of twist angle, low intensity satellite peaks also become apparent. Our framework incorporates these satellite peaks which reveals transformation of symmetry in the charge density distribution from high to low twist angle TBG. One striking outcome is the demonstration of the electron localization in the AA region of low twist angle TBG. Our framework helps to explain the effect of the atomistic relaxation on the charge density distribution and thus, it provides information about exotic electronic properties of low twist angle TBG at a low computational expense.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spatiotemporal Observation of Quasi-Ballistic Transport of Electrons in Graphene

We report spatiotemporal observations of room-temperature quasi-ballistic electron transport in graphene, which is achieved by utilizing a four-layer van der Waals heterostructure to generate free charge carriers. The heterostructure is formed by sandwiching a MoS 2 and MoSe 2 heterobilayer between two graphene monolayers. Transient absorption measurements reveal that the electrons and holes separated by the type-II interface between MoS 2 and MoSe 2 can transfer to the two graphene layers, respectively. Transient absorption microscopy measurements, with high spatial and temporal resolution, reveal that while the holes in one graphene layer undergo a classical diffusion process with a large diffusion coefficient of 65 cm 2 s –1 and a charge mobility of 5000 cm 2 V –1 s –1 , the electrons in the other graphene layer exhibit a quasi-ballistic transport feature, with a ballistic transport time of 20 ps and a speed of 22 km s –1 , respectively. The different in-plane transport properties confirm that electrons and holes move independently of each other as charge carriers. Furthermore, the optical generation of ballistic charge carriers suggests potential applications for such van der Waals heterostructures as optoelectronic materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Scalable Upcycling of Spent Lithium-Ion Battery Anodic Graphite to Electronic-Grade Graphene

Recycling processes for lithium-ion batteries (LIBs) are imperative to support the sustainable growth of global energy storage systems. This study introduces a scalable method for the upcycling of spent graphite anodes from LIBs to produce electronic-grade graphene nanoplatelets. In addition to comprehensive materials characterization, the electronic quality of the upcycled graphene is demonstrated by formulating it into a screen printing ink that achieves high-resolution patterning and thin-film electrical conductivity exceeding 104 S m−1. This screen printing ink is also used to print planar micro-supercapacitors with exceptional areal capacitance (1.78 mF cm−2), areal energy density (0.247 µWh cm−2), and cycling stability (> 10 000 cycles). Life cycle assessment (LCA) and techno-economic analysis (TEA) highlight the environmental benefits and cost reductions attainable through upcycling of graphite from LIBs. By capturing economic value from spent LIBs, this work fosters a sustainable battery supply chain and provides an abundant and geographically distributed raw material for electronic-grade graphene.

energy storage↗
DOE OSTI2025

Momentum space AC Josephson effect and intervalley coherence in multilayer graphene

Electron transport driven by the phase coherence and interference of quantum many-body wavefunctions is a fascinating phenomenon with potential technological significance. Superconductivity, for example, enables dissipationless transport through macroscopic phase twisting, while charge-density waves show broadband noise and AC-DC interference once their phase is depinned. We identify an analogous phase-coherent dynamics in the intervalley-coherent (IVC) state frequently observed in rhombohedral multilayer graphene. We show that a static magnetic field drives an oscillating intervalley current, which produces an oscillating orbital magnetization and thereby a detectable AC Hall response. This mechanism is similar to the Josephson effect observed in superconductors but now happening in momentum space. In this analogy, the static magnetic field acts as the DC voltage, while the oscillating intervalley current is the AC Josephson current. We provide microscopic calculations of all the phase-number free-energy parameters in rhombohedral trilayer graphene, establishing this effect as an experimental signature of IVC order.

electronic properties and materials↗
DOE OSTI2020

Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering

Chromium atoms in graphene have been proposed to exhibit magnetic moments and spin-selective conducting states depending on the local bonding geometry within the graphene structure, which could lead to interesting applications in spintronics. Despite this interest, there are few direct experimental reports of Cr dopants in graphene even though it is theorized to be stable. Here, we demonstrate the introduction of single Cr dopant atoms into the graphene lattice and onto graphene edges through the controlled use of a focused electron beam in a scanning transmission electron microscope. Here, we show local control of doping locations, and when coupled with targeted in situ milling during scanning of the e-beam, these strategies demonstrate an important component of the fabrication of tailored nanostructured devices in the electron microscope. The approach is validated with first-principles calculations to understand synthesis pathways during fabrication and reveal the energetics and local properties of Cr atoms embedded in graphene; for example, Cr doping can convert graphene into a magnetic and semiconducting material, which suggests Cr-doped graphene can be used as a building block for potential electronic devices and a means to construct them.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Momentum-Space Observation of Optically Excited Nonthermal Electrons in Graphene with Persistent Pseudospin Polarization

The unique optical properties of graphene, with broadband absorption and ultrafast response, make it a critical component of optoelectronic and spintronic devices. Using time-resolved momentum microscopy with high data rate and high dynamic range, we report momentum-space measurements of electrons promoted to the graphene conduction band with visible light and their subsequent relaxation. Here, we observe a pronounced nonthermal distribution of nascent photoexcited electrons with lattice pseudospin polarization in remarkable agreement with results of simple tight-binding theory. By varying the excitation fluence, we vary the relative importance of electron-electron vs electron-phonon scattering in the relaxation of the initial distribution. Increasing the excitation fluence results in increased noncollinear electron-electron scattering and reduced pseudospin polarization, although up-scattered electrons retain a degree of polarization. These detailed momentum-resolved electron dynamics in graphene demonstrate the capabilities of high-performance time-resolved momentum microscopy in the study of 2D materials and can inform the design of graphene devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

From ground to excited electronic state dynamics of electron and ion irradiated graphene nanomaterials

Microscopes utilizing convergent electron and ion beams are emerging as powerful tools for both imaging and manipulating two-dimensional materials with atomic resolution, allowing the ultimate limits of nanofabrication to be realized. In this chapter, we detail the use of time-dependent electronic structure theory to determine the excited state properties and reactivity of functionalized graphene nanostructures. A time-dependent density functional theory treatment of electronic excitations of materials is presented, with specific emphasis on predicting the position-dependent electronic response of two-dimensional nanomaterials to electron beams. The method is demonstrated in a study highlighting the important role that electronic excitation can play in opening reaction pathways relevant to atomically precise defect manipulation in graphene. Finally, we provide some perspective on future development directions for methods of simulating nonequilibrium electronic and vibrational dynamics induced by electron/ion beams.

Lingerfelt, David↗
DOE OSTI2020

Hall effect for Dirac electrons in graphene exposed to an Abrikosov flux lattice

The proposals for realizing exotic particles through coupling of quantum Hall effect to superconductivity involve spatially non-uniform magnetic fields. As a step toward that goal, we study, both theoretically and experimentally, a system of Dirac electrons exposed to an Abrikosov flux lattice. Here, we theoretically find that the non-uniform magnetic field causes a carrier-density-dependent reduction of the Hall conductivity. Our studies show that this reduction originates from a rather subtle effect: a levitation of the Berry curvature within Landau levels broadened by the non-uniform magnetic field. Experimentally, we measure the magneto-transport in a monolayer graphene-hexagonal boron nitride-niobium diselenide (NbSe 2 ) heterostructure, and find a density-dependent reduction of the Hall resistivity of graphene as the temperature is lowered from above the superconducting critical temperature of NbSe 2 , when the magnetic field is uniform, to below, where the magnetic field bunches into an Abrikosov flux lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Characterizing Electron Flow through Catechol‐Graphene Composite Hydrogels

Abstract Electronic materials that allow the controlled flow of electrons in aqueous media are required for emerging applications that require biocompatibility, safety, and/or sustainability. Here, a composite hydrogel film composed of graphene and catechol is electrofabricated, and that this composite offers synergistic properties is reported. Graphene confers metal‐like conductivity and enables charge‐storage through an electrical double layer mechanism. Catechol confers redox‐activity and enables charge‐storage through a redox mechanism. Importantly, there are two functional populations of catechols: conducting‐catechols (presumably in intimate contact with graphene) allow direct electron‐transfer; and non‐conducting‐catechols (presumably physically separated from graphene) require diffusible mediators to enable electron‐transfer. Using a variety of spectroelectrochemical measurements, that the capacity of the composite for charge‐storage increases in proportion to the extent by which the catechol‐groups can undergo redox‐state switching is demonstrated. To illustrate the broad relevance of this work, how the redox‐state switching can be related to both the charge storage of energy materials and the memory of molecular electronic materials is discussed. The authors believe this work is significant because it demonstrates that: conducting and redox‐active components enable distinctly different mechanisms for charge‐storage and electron‐transfer; these components act synergistically; and mediators provide unique opportunities to extend the capabilities of electronic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Hydrodynamic electron transport in graphene Hall-bar devices

Here we consider hydrodynamic electron transport in the Hall-bar geometry. The theory is developed for systems with non-Galilean-invariant electron liquids. We show that inhomogeneity of the electron density induced by long-range disorder and gating leads to mixing between the hydrodynamic transport mode and transport relative to the electron liquid. For graphene systems near charge neutrality, these effects lead to strong coupling of the hydrodynamic flow to charge transport. As a result, the effective electrical conductivity of the system may significantly exceed the intrinsic conductivity of the electron liquid. We obtain analytic expressions for the thermoelectric transport coefficients of the system as a function of density in the full crossover region between clean and disorder-dominated regimes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Orbital-Dependent Coulomb Drag in Electron-Hole Bilayer Graphene Heterostructures

Here, we report Coulomb drag studies in an electron-hole bilayer graphene heterostructure in a magnetic field, where the orbital, spin, and valley degrees of freedom are lifted by the combined effects of exchange interaction, Zeeman energy, and a vertical displacement field. Our device enables the application of a large vertical displacement field across both layers. In addition to the well-established strong Coulomb drag between the Landau levels with an orbital quantum number 𝑁 = 0, we observe a Coulomb drag signal between the 𝑁 = 1 Landau levels under a suitable vertical displacement field. As the vertical displacement field increases further, the Coulomb drag signal between 𝑁 = 1 Landau levels weakens, and a Coulomb drag signal emerges between the 𝑁 = 0 and 𝑁 = 1 Landau levels. These findings suggest the important roles of the orbital index and the vertical displacement field in interlayer Coulomb interaction within the quantum Hall regime of coupled bilayer systems.

Landau levels↗
DOE OSTI2023

Spin and orbital metallic magnetism in rhombohedral trilayer graphene

We provide a theoretical interpretation of the metallic broken spin-valley (flavor) symmetry states recently discovered in hole-doped rhombohedral trilayer (ABC) graphene in large electric displacement fields. Our conclusions about the phase diagram and phase transitions combine insights from ABC graphene electronic structure models and mean-field theory, and are guided by the precise magneto-oscillation Fermi-surface-area measurements of recent experiments. We find that the principle of momentum-space condensation plays a key role in determining Fermi-surface reconstructions enabled by broken flavor symmetries when the single-particle bands imply thin annular Fermi seas. The reconstructed Fermi sea consists of one large outer Fermi-surface-enclosed majority-flavor states in reciprocal-space area A maj and one or more small inner holelike Fermi-surface-enclosed minority-flavor states in A min that are primarily responsible for nematic order. The competing ground states (valley-Ising, valley-XY, and spin-polarized state) have different A maj /A min and exchange energy maximizes this ratio and selects valley-XY nematic metal as the lowest-energy state. Here, we discuss how the nematic pockets explain the observed fractionalization of quantum oscillation frequencies, and propose anisotropic transport and the nonlinear Hall effect as additional observables.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Correlation-driven electron-hole asymmetry in graphene field effect devices

Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in twisted graphene and moiré heterostructures has spurred interest into whether it stems from single-particle effects or from correlations, which are core to the emergence of intriguing phases in moiré systems. Here, we report an effective way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field-effect devices. As the chemical potential moves from the hole to the electron-doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations intrinsically drive the electron-hole asymmetry in graphene and by leveraging this asymmetry can provide alternative avenues to generate exotic phases in twisted moiré heterostructures.

36 MATERIALS SCIENCE↗