Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ge-Si-V”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Materials Data on V10(SiGe)3 by Materials Project

V10(GeSi)3 crystallizes in the hexagonal P-62m space group. The structure is three-dimensional. there are three inequivalent V sites. In the first V site, V is bonded in a 8-coordinate geometry to two equivalent V, three equivalent Ge, and three equivalent Si atoms. There are one shorter (2.40 Å) and one longer (2.50 Å) V–V bond lengths. All V–Ge bond lengths are 2.54 Å. All V–Si bond lengths are 2.52 Å. In the second V site, V is bonded in a 5-coordinate geometry to three equivalent Ge and two equivalent Si atoms. There are two shorter (2.48 Å) and one longer (2.58 Å) V–Ge bond lengths. Both V–Si bond lengths are 2.65 Å. In the third V site, V is bonded in a 5-coordinate geometry to two equivalent Ge and three equivalent Si atoms. Both V–Ge bond lengths are 2.67 Å. There are two shorter (2.46 Å) and one longer (2.62 Å) V–Si bond lengths. Ge is bonded in a 9-coordinate geometry to nine V atoms. Si is bonded in a 9-coordinate geometry to nine V atoms.

36 MATERIALS SCIENCE↗

Materials Data on VSiGe by Materials Project

V(SiGe) crystallizes in the trigonal P3_212 space group. The structure is three-dimensional. V2+ is bonded in a 7-coordinate geometry to two equivalent Ge2+ and five equivalent Si4- atoms. Both V–Ge bond lengths are 2.57 Å. There are two shorter (2.56 Å) and three longer (2.71 Å) V–Si bond lengths. Ge2+ is bonded in a 7-coordinate geometry to two equivalent V2+ and five equivalent Si4- atoms. There are a spread of Ge–Si bond distances ranging from 2.55–2.73 Å. Si4- is bonded in a 10-coordinate geometry to five equivalent V2+ and five equivalent Ge2+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on V10(SiGe)3 by Materials Project

V10(GeSi)3 crystallizes in the orthorhombic Fmm2 space group. The structure is three-dimensional. there are five inequivalent V sites. In the first V site, V is bonded in a 6-coordinate geometry to two equivalent Ge and four Si atoms. Both V–Ge bond lengths are 2.60 Å. There are a spread of V–Si bond distances ranging from 2.49–2.74 Å. In the second V site, V is bonded in a 6-coordinate geometry to three Ge and three equivalent Si atoms. There are one shorter (2.53 Å) and two longer (2.60 Å) V–Ge bond lengths. There are one shorter (2.49 Å) and two longer (2.73 Å) V–Si bond lengths. In the third V site, V is bonded in a 6-coordinate geometry to four Ge and two Si atoms. There are two shorter (2.59 Å) and two longer (2.74 Å) V–Ge bond lengths. There are one shorter (2.49 Å) and one longer (2.54 Å) V–Si bond lengths. In the fourth V site, V is bonded in a 6-coordinate geometry to three Ge and three Si atoms. There are one shorter (2.56 Å) and two longer (2.60 Å) V–Ge bond lengths. There are one shorter (2.47 Å) and two longer (2.74 Å) V–Si bond lengths. In the fifth V site, V is bonded in a 6-coordinate geometry to two equivalent V, one Ge, and three Si atoms. There are one shorter (2.38 Å) and one longer (2.43 Å) V–V bond lengths. The V–Ge bond length is 2.56 Å. There are one shorter (2.51 Å) and two longer (2.52 Å) V–Si bond lengths. There are two inequivalent Ge sites. In the first Ge site, Ge is bonded in a 10-coordinate geometry to eight V and two equivalent Ge atoms. Both Ge–Ge bond lengths are 2.41 Å. In the second Ge site, Ge is bonded in a 10-coordinate geometry to ten V atoms. There are two inequivalent Si sites. In the first Si site, Si is bonded in a 10-coordinate geometry to ten V atoms. In the second Si site, Si is bonded in a 10-coordinate geometry to ten V atoms.

36 MATERIALS SCIENCE↗