Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ge”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2O3

Germanium (Ge) and its heterostructures with compound semiconductors offer a unique optoelectronic functionality due to its pseudo-bandgap nature, that can be transformed to a direct bandgap material by providing strain and/or mixing with tin. Moreover, two crystal surfaces, (100)Ge and (110)Ge, that are technologically important for ultralow power fin or nanosheet transistors, could offer unprecedented properties with reduced surface defects after passivating these surfaces by atomic layer deposited (ALD) dielectrics. In this work, the crystallographically oriented epitaxial Ge/AlAs heterostructures were grown and passivated with ALD Al2O3 dielectrics, and the microwave photoconductive decay (u-PCD) technique was employed to evaluate carrier lifetimes at room temperature. The X-ray photoelectron spectroscopy analysis reveals no role of orientation effect in the quality of the ALD Al2O3 dielectric on oriented Ge layers. The carrier lifetimes measured using the u-PCD technique were benchmarked against unpassivated Ge/AlAs heterostructures. Excitation wavelengths of 1500 and 1800 nm with an estimated injection level of ~10^13 cm-3 were selected to measure the orientation-specific carrier lifetimes. The carrier lifetime was increased from 390 ns to 565 ns for (100)Ge and from 260 ns to 440 ns for (110)Ge orientations with passivation, whereas the carrier lifetime is almost unchanged for (111)Ge after passivation. This behavior indicates a strong dependence of the measured lifetime on surface orientation and surface passivation. The observed increase (>1.5x) in lifetime with Al2O3-passivated (100)Ge and (110)Ge surfaces is due to the lower surface recombination velocity compared to unpassivated Ge/AlAs heterostructures. The enhancement of carrier lifetime from passivated Ge/AlAs heterostructures with (100)Ge and (110)Ge surface orientations offers a path for the development of nanoscale transistors due to the reduced interface state density.

Al2O3↗
DOE OSTI2023

Ironing out the transition metal contribution to the magnetism of the n = 3 members of the homologous series Pr n +1 M n Ge 3 n +1 (M = Fe, Co): Pr 4 Fe 3 Ge 10 vs. Pr 4 Co 3 Ge 10

The Ln n+1 M n X 3n+1 (Ln = lanthanide, M = transition metal, and X = tetrel) homologous series provides a platform to study collective phenomena in quantum materials. Here, in this work, we compare the crystal growth, structure, and magnetic properties of the n = 3 members of the Pr n+1 M n Ge 3n+1 (M = Fe, Co) analogues, Pr 4 Fe 3 Ge 10 (a = 4.3207 (10) Å, b = 35.523 (8) Å, c = 4.2982 (15) Å, and V = 659.7 (3) Å 3 ) and Pr 4 Co 3 Ge 10 (a = 4.3091 (12) Å, b = 35.750 (9) Å, c = 4.2807 (11) Å, and V = 659.4 (3) Å 3 ). We determined that the ideal flux growth conditions for each compound are highly dependent on the concentration of Sn flux and quench temperature. Pr 4 Fe 3 Ge 10 orders ferromagnetically at 10 K along the c-direction while Pr 4 Co 3 Ge 10 orders antiferromagnetically at 16 K along the b-direction. For both compounds, we observed a magnetic moment higher than that expected for only Pr 3+ ions (3.58 µ B /Pr), implying that the transition metal ions contribute to magnetic ordering (3.91, 3.48, and 3.69 µ B /Pr for Pr 4 Fe 3 Ge 10 , and 3.76, 4.04, and 3.83 µ B /Pr for Pr 4 Co 3 Ge 10 measured along the a-, b-, and c-directions, respectively). Moreover, the zero-field Mössbauer spectrum obtained at 4.2 K for Pr 4 Fe 3 Ge 10 demonstrates that the iron sites participate in magnetic ordering.

36 MATERIALS SCIENCE↗
NASA NTRS1993

High frequency performance of Si(1-x)Ge(x)/Si(1-y)Ge(y)/Si(1-x)Ge(x) HBTs

The results of a theoretical study of the performance of high speed SiGe HBTs is presented. The study includes a group of SiGe HBTs in which the Ge concentration in the base is 20 percent higher than that in the emitter and collector (i.e., y = x + 0.2). It is shown that the composition dependences of f(T) and the f(max) are nonmonotonic. As the Ge composition in the emitter and collector layers is increased, f(T) and f(max) first decrease, then remain constant and finally increase to attain their highest values.

Rosenfeld, D.↗
NASA NTRS1993

High purity isotopically enriched Ge-70 and Ge-74 single crystals - Isotope separation, growth, and properties

Ge-70 and Ge-74 isotopes were successfully separated from natural Ge, and were zone purified. Several highly enriched, high purity Ge-70 and Ge-74 single crystals were grown by the vertical Bridgman method. The growth system was designed for reliable growth of low dislocation density, high purity Ge single crystals of about 4 g weight. A Ge-70 and a Ge-74 crystal were selected for complete characterization. In spite of the large surface-to-volume ratio of these ingots, both Ge-70 and Ge-74 crystals contain low electrically active chemical net-impurity concentrations of about 2 x 10 exp 12/cu cm, which is 2 orders of magnitude better than that of Ge-74 crystals previously grown by two different groups. Isotopic enrichment of the Ge-70 and the Ge-74 crystals is 96.3 percent and 96.8 percent, respectively. The residual donors and acceptors present in both crystals were identified as phosphorus and copper, respectively. In addition, less than 10 exp 11/cu cm Ga, Al, and In were found in the Ge-70 crystal.

Itoh, Kohei↗
DOE OSTI2023

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core–shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core–shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core–shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag–Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. In conclusion, this study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2020

σ‐Aromaticity‐Induced Stabilization of Heterometallic Supertetrahedral Clusters [Zn 6 Ge 16 ] 4− and [Cd 6 Ge 16 ] 4−

Abstract In this work, the largest heterometallic supertetrahedral clusters, [Zn 6 Ge 16 ] 4− and [Cd 6 Ge 16 ] 4− , were directly self‐assembled through highly‐charged [Ge 4 ] 4− units and transition metal cations, in which 3‐center–2‐electron σ bonding in Ge 2 Zn or Ge 2 Cd triangles plays a vital role in the stabilization of the whole structure. The cluster structures have an open framework with a large central cavity of diameter 4.6 Å for Zn and 5.0 Å for Cd, respectively. Time‐dependent HRESI‐MS spectra show that the larger clusters grow from smaller components with a single [Ge 4 ] 4− and ZnMes 2 units. Calculations performed at the DFT level indicate a very large HOMO–LUMO energy gap in [M 6 Ge 16 ] 4− (2.22 eV), suggesting high kinetic stability that may offer opportunities in materials science. These observations offer a new strategy for the assembly of heterometallic clusters with high symmetry.

Xu, Hong‐Lei↗
DOE OSTI2022

Electronic structure of Humble defects in Ge and Ge 0.8⁢ Si 0.2

The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111}, and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for some time to occur in Ge, has recently also been observed in Si-Ge alloys, but the details of its electronic structure remain poorly understood. Here, in this work, we perform first-principles density-functional calculations to study Humble defects in both Ge and Ge 0.8⁢ Si 0.2 . We also measure the Si L 2,3 -edge electron energy-loss spectra both at the defect and in a bulk-like region far from the defect and compare with theoretical calculations on corresponding Si sites in our first-principles calculations. We find that inclusion of core-hole effects in the theory is essential for reproducing the observed L 2,3 edge spectra, and that once they are included, the results provide a set of fingerprints for different types of local atomic bonding environments in Ge 0.8⁢ Si 0.2 . Our first-principles calculations reveal that the Humble defects have a tendency to enlarge the electronic band gap, which may have potential uses in band engineering. The use of hybrid functionals for an improved description of the band gap in these systems is also discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Acceleration of Crystallization Kinetics in Ge‐Sb‐Te‐Based Phase‐Change Materials by Substitution of Ge by Sn

Abstract Thin films of (Ge 1– x Sn x ) 8 Sb 2 Te 11 are prepared to study the impact of Sn‐substitution on properties relevant for application in phase‐change memory, a next‐generation electronic data storage technology. It is expected that substitution decreases the crystallization temperature, but it is not known how the maximum crystallization rate is affected. Ge 8 Sb 2 Te 11 is chosen from the (GeTe) y (Sb 2 Te 3 ) 1– y system of phase‐change materials as a starting point due to its higher crystallization temperature as compared to the common material Ge 2 Sb 2 Te 5 . In situ X‐ray diffraction at 5 K min −1 heating rate is performed to determine the crystallization temperature and the resulting structure. To measure the maximum crystallization rate, femtosecond optical pulses that heat the material repetitively and monitor the resulting increase of optical reflectance are used. Glasses over the entire composition range are prepared using a melt‐quenching process. While at x = 0, 97, subsequent pulses are required for crystallization, one single pulse is enough to achieve the same effect at x = 0.5. The samples are further characterized by optical ellipsometry and calorimetry. The combined electrical and optical contrast and the ability to cycle between states with single femtosecond pulses renders Ge 4 Sn 4 Sb 2 Te 11 promising for photonics applications.

Zalden, Peter↗
DOE OSTI2022

Evolution of shape and collectivity along the Ge isotopic chain: The case of 80 Ge

In this work, the shape and collectivity of 80 Ge were investigated via a sub-barrier-energy Coulomb excitation measurement using the JANUS setup at the NSCL ReA3 facility. The 80 Ge spectroscopic quadrupole moment $Q_{s}(2^{+}_{1})$ of the $2^{+}_{1}$ state was measured for the first time, and the precision of the 80 Ge $B(E2; 0^{+}_{1}$ → $2^{+}_{1}$) transition strength was increased. The experimental $Q_{s}(2^{+}_{1})$ value indicates a large, prolate deformation for 80 Ge, which is consistent with large-scale shell-model calculations performed for comparison. These results provide important benchmarks for models that try to describe nuclear shape in neutron-rich nuclei near the magic number N=50.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1978

Ge:Ga and Ge:Be photoconductive detectors for far infrared astronomy from a space platform

The paper describes some of the development work on gallium-doped germanium (Ge:Ga) and beryllium-doped germanium (Ge:Be) photoconductive detectors for use in far-infrared astronomical observations from a space platform such as IRAS. The paper is concerned primarily with detector performance and is divided into two major parts. The first presents the operating principles of this type of detector, while the second presents measured performance data under low-background flux conditions. It is shown that high sensitivity can be obtained from Ge:Ga and Ge:Be detectors under low-background and low-temperature conditions of operation. These detectors are useful for astronomical observations in the far-infrared over the wavelength range 30-120 microns. Major conclusions of the research work done so far are mentioned, including that detectors cut from the same crystal show reasonably good reproducibility of operating characteristics.

Bratt, P. R.↗
DOE OSTI2022

Magnetic ordering in GdAuAl 4 Ge 2 and TbAuAl 4 Ge 2 : Layered compounds with triangular lanthanide nets

In this work, we report the synthesis and magnetic properties of GdAuAl 4 Ge 2 and TbAuAl 4 Ge 2 , where temperature and magnetic field dependent magnetization, heat capacity, and electrical resistivity measurements reveal that both compounds exhibit several magnetically ordered states at low temperatures, with evidence for magnetic fluctuations extending into the paramagnetic temperature region. For magnetic fields applied in the ab-plane there is particularly rich behavior, with several ordered state regions that are separated by metamagnetic phase transitions. Despite Gd being an isotropic S-state ion and Tb having an anisotropic J-state, there are similarities in the phase diagrams for the two compounds, suggesting that factors such as the symmetry of the crystalline lattice, which features well separated triangular planes of lanthanide ions, or the Ruderman–Kittel–Kasuya– Yosida interaction control the magnetism. We also point out similarities to other centrosymmetric compounds that host skyrmion lattices such as Gd 2 PdSi 3 , and propose that the LnAuAl 4 Ge 2 family of compounds are of interest as reservoirs for complex magnetism and electronic behaviors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Anisotropic magnetic and transport properties of orthorhombic o-Pr 2 Co 3 Ge 5

Abstract The crystal structure, electron energy-loss spectroscopy (EELS), heat capacity, and anisotropic magnetic and resistivity measurements are reported for Sn flux grown single crystals of orthorhombic Pr 2 Co 3 Ge 5 (U 2 Co 3 Si 5 -type, Ibam ). Our findings show that o -Pr 2 Co 3 Ge 5 hosts nearly trivalent Pr ions, as evidenced by EELS and fits to temperature dependent magnetic susceptibility measurements. Complex magnetic ordering with a partially spin-polarized state emerges near T sp = 32 K, with a spin reconfiguration transition near T M = 15 K. Heat capacity measurements show that the phase transitions appear as broad peaks in the vicinity of T sp and T M . The magnetic entropy further reveals that crystal electric field splitting lifts the Hund’s rule degeneracy at low temperatures. Taken together, these measurements show that Pr 2 Co 3 Ge 5 is an environment for complex f state magnetism with potential strongly correlated electron states.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Deep Optical Switching on Subpicosecond Timescales in an Amorphous Ge Metamaterial

Active nanostructured optical components show promise as potential building blocks for novel light-based computing and data processing architectures. However, nanoscale all-optical switches that have low activation powers and high-contrast ultrafast switching have been elusive so far. Here, pump–probe measurements performed on amorphous-Ge-based micro-resonator metasurfaces that exhibit strong resonant modes in the mid-infrared are reported. Relative change is observed in transmittance of ΔT/T ≈ 1 with picosecond (down to τ ≈ 0.5 ps) free carrier relaxation rates, obtained with very low pump fluences of 50 μJ cm –2 . In this work, these observations are attributed to efficient free carrier promotion, affecting light transmittance via high quality-factor optical resonances, followed by an increased electron–phonon scattering of free carriers due to the amorphous crystal structure of Ge. Full-wave simulations based on a permittivity model that describes free-carrier damping through crystal structure disorder find excellent agreement with the experimental data. These findings offer an efficient and robust platform for all-optical switching at the nanoscale.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Group IV topological quantum alloy and the role of short-range order: the case of Ge-rich Ge 1– x Pb x

Despite the explosion of interest in topological materials over the last decades, their applications remain limited due to challenges in growth and incorporation with today’s microelectronics. As a potential bridge to close this gap, we investigate the group-IV alloy Ge 1–x Pb x , in the Ge-rich condition using density functional theory and show that relatively low concentrations of Pb (~9.4%) can lead to a topological phase transition. Furthermore, the calculation of the Z 2 invariant for both the random alloy and the alloy with short-range order (SRO) indicate that the topological phase of the material can be directly modified by the degree of SRO. These findings are understood in terms of local structural relaxation, which decreases the bandgap in the random alloy. However, in the SRO case, the mutual avoidance of Pb leads to minimal structural relaxation, alleviating strain. Our findings not only highlight the emerging importance of SRO in alloy properties but also indicate the possibility of constructing topological interfaces between materials of identical composition (and nominally identical structure). Moreover, they uncover a viable avenue toward the monolithic integration of quantum materials with today’s semiconductor industry.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Revisiting the K-edge X-ray absorption fine structure of Si, Ge–Si alloys, and the isoelectronic series: CuBr, ZnSe, GaAs, and Ge

Extended X-ray absorption fine structure (EXAFS) has evolved into an unprecedented local-structure technique that is routinely used to study materials’ problems in the biological, chemical, and physical sciences. Like many other experimental techniques, EXAFS also requires that several key atomic parameters must be known a priori before structural information can be quantitatively determined. Utilizing current analytical methods, we revisit the isoelectronic series CuBr, ZnSe, GaAs, and Ge originally studied by Stern et al. during the early development of EXAFS. We demonstrate that the ab initio EXAFS code FEFF accurately predicts the atomic phase shifts and backscattering amplitudes that are primarily functions of the sum of atomic numbers Z along an EXAFS scattering path. We also investigate quantitative fitting and first- and second-shell phase transferability together with problems that arise if a backscattering atom is identified incorrectly in an EXAFS fitting model. Features in the near-edge region, on the other hand, are shown to require a comprehensive treatment of the band structure and density-of-states, including effects of the screened Coulomb interaction between the photoelectron and core hole. Here, we demonstrate that the Bethe–Salpeter equation (BSE) accurately captures the NEXAFS (or XANES) portion of the spectrum for the isoelectronic series in addition to Si and Ge–Si alloys, including within a few eV of the absorption edge, where band structure and excitonic effects are most important.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗